Abstract: A system for providing a timing signal with tunable temperature dependency in an electronic device may include a timing circuit and an initial setting circuit. The timing circuit may include a delay stage and a gate stage. The delay stage may be configured to receive an input signal and to produce a delayed signal by introducing a delay to the input signal. The gate stage may be configured to receive the delayed signal and a threshold setting signal, to produce an output signal using the delayed signal and a logic threshold, and to set an initial value of the logic threshold according to the threshold setting signal. The initial setting circuit may be configured to allow the threshold setting signal to be tuned for providing the time delay with a specified temperature dependency.

Abstract: Apparatuses and techniques for sharing a sense amplifier between memory cells of a memory device are described. To enable sharing of a sense amplifier between two memory cells, a memory device includes switching devices that selectively couple bitlines of two memory cells to a single sense amplifier. During a first time period, for a differential sense amplifier, the switching devices are controlled to connect terminals of the sense amplifier to bitlines of a first memory cell and to disconnect bitlines of a second memory cell from the terminals of the sense amplifier. During a second time period, the switching devices are controlled to connect terminals of the sense amplifier to the bitlines of the second memory cell and disconnect the bitlines of the first memory cell from the terminals of the sense amplifier. Accordingly, a single sense amplifier may be utilized to read the stored values from different memory cells.

Abstract: A method and a device is provided for utilizing unused valid (V) bits residing on a previous command to transmit additional activate information to a memory device. Additional activate information may be transmitted to the memory device without increasing the tRCD time, or increasing the command/address (CA) bus pins, or adding additional circuit area, thereby reducing the impact on the performance of the memory device.

Abstract: A system (100) for providing a timing signal with tunable temperature dependency in an electronic device may include a timing circuit (102) and an initial setting circuit (104). The timing circuit (102) may include a delay stage (106) and a gate stage (108). The delay stage (106) may be configured to receive an input signal and to produce a delayed signal by introducing a delay to the input signal. The gate stage (108) may be configured to receive the delayed signal and a threshold setting signal, to produce an output signal using the delayed signal and a logic threshold, and to set an initial value of the logic threshold according to the threshold setting signal. The initial setting circuit (104) may be configured to allow the threshold setting signal to be tuned for providing the time delay with a specified temperature dependency.

Abstract: Systems, methods, and apparatus for memory management operations in a memory device. In one approach, an external controller (e.g., ASIC controller) selects a directed scrub or a periodic scrub by issuing an encoded maintenance mode command to a local controller on a memory component managed by the external controller. The selection of the type of command can be based on a context of operation (e.g., signals provided by the memory component). In one example, the directed scrub is selected by the external controller based on error signals provided from error correction circuitry on the memory component during a read operation.

Abstract: Systems, methods, and apparatus for memory management operations in a memory device. In one approach, each of multiple banks in a memory array includes a scrub holding register. Data is scrubbed in the background by moving data from a location in a memory array to the scrub holding register. Data in the scrub holding register is scrubbed by error correction circuitry shared by the multiple banks. Status data is recorded for any writes that occur to the array location during the scrubbing. After scrubbing is complete, some or all portions of the scrubbed data are moved back to the array location. The status data is used to identify those portions to move back.

Abstract: Apparatus and methods for page-based soft post package repair are disclosed. Based on data stored in a storage element, an address may be decoded to a prime row, a row-based redundant row, or a page-based redundant row. A match logic circuit may determine whether the address corresponds to a defective prime row and generate a match signal. A decoder can select a redundant row to be accessed instead of a prime row in response to the match signal indicating that the address data corresponding to the address to be accessed matches defective address data stored in a volatile memory. A page-based redundant row allows for page-by-page substitution for defective memory, allowing functional portions of memory to continue to be used.

Abstract: Systems, methods, and apparatus for memory management operations in a memory device. In one approach, each of multiple banks in a memory array includes a scrub holding register and a source holding register. Data is scrubbed in the background by moving data from a source page to the scrub holding register. Data in the scrub holding register is scrubbed by error correction circuitry shared by the multiple banks. Any writes that occur to the address of the source page during the scrubbing are made to the source holding register. Status data is recorded regarding any such writes that occur. After scrubbing is complete, the scrubbed data is moved to a target page by combining data from the scrub and source holding registers as guided by the status data.

Abstract: Systems, methods, and apparatus to detect errors in data being accessed in a memory array. In one approach, a memory device includes error detection circuitry, error correction circuitry, and a controller. The controller accesses portions of the memory array. The error detection circuitry determines whether an error exists in the accessed portions. Errors are detected by comparing parity stored in each portion with the computed parity for all data stored in that portion when being accessed. If an error is detected for a portion, an address of that portion is stored in a scrub queue for later correction using the error correction circuitry.

Abstract: Apparatus and methods for page-based soft post package repair are disclosed. Based on data stored in a storage element, an address may be decoded to a prime row, a row-based redundant row, or a page-based redundant row. A match logic circuit may determine whether the address corresponds to a defective prime row and generate a match signal. A decoder can select a redundant row to be accessed instead of a prime row in response to the match signal indicating that the address data corresponding to the address to be accessed matches defective address data stored in a volatile memory. A page-based redundant row allows for page-by-page substitution for defective memory, allowing functional portions of memory to continue to be used.

Abstract: Systems and methods described herein may enable memory maintenance operations to be performed on a memory device in compliance with a time interval having a duration based on a temperature of the memory device. A system may include a memory device and a memory controller communicatively coupled to the memory device. The memory controller may receive a temperature measurement indicative of a present temperature of the memory device and determine a memory management interval based on the temperature measurement. The memory controller may perform a memory management operation based on the memory management interval. Sometimes, the memory controller powers on the memory device to perform the memory management operation on the memory device.

Abstract: A system performs operations including: storing a first value in a first memory location used for selecting a sub-channel of a plurality of sub-channels in a communication channel, each of the plurality of sub-channels corresponding to one or more memory components of a plurality of memory components of the memory device, wherein the first value specifies that a sub-channel selecting function is enabled; receiving, through the communication channel, a command directed to the memory device; responsive to receiving the command, storing a second value in a second memory location, wherein the second value is obtained from the command; determining that the second value matches a third value stored in a third memory location, wherein the third value stored in the third memory location comprises a preset value corresponding to a first component of the plurality of components of the memory device; and executing, by the first component, the command.

Abstract: Systems, methods and apparatuses to log memory errors in memory devices that can perform wear leveling based on physical addresses used in the memory devices to address select memory cells. For example, a controller of a memory sub-system communicates with a memory device installed in the memory sub-system to access memory cells in the memory device. During the communication to access memory cells in the memory device, the controller can determine a memory error at a first address. If the controller transmits the first address to the memory device for memory access at the time of the memory error, the memory device converts the first address to a second address to perform the memory access. The controller can be configured to determine the second address and record, in an error log, the memory error in association with the second address.

Abstract: Systems and methods described herein may enable memory maintenance operations to be performed on a memory device in compliance with a time interval having a duration based on a temperature of the memory device. A system may include a memory device and a memory controller communicatively coupled to the memory device. The memory controller may receive a temperature measurement indicative of a present temperature of the memory device and determine a memory management interval based on the temperature measurement. The memory controller may perform a memory management operation based on the memory management interval. Sometimes, the memory controller powers on the memory device to perform the memory management operation on the memory device.

Abstract: Systems, methods and apparatuses to log memory errors in memory devices that can perform wear leveling based on physical addresses used in the memory devices to address select memory cells. For example, a controller of a memory sub-system communicates with a memory device installed in the memory sub-system to access memory cells in the memory device. During the communication to access memory cells in the memory device, the controller can determine a memory error at a first address. If the controller transmits the first address to the memory device for memory access at the time of the memory error, the memory device converts the first address to a second address to perform the memory access. The controller can be configured to determine the second address and record, in an error log, the memory error in association with the second address.

Abstract: A method and a device is provided for utilizing unused valid (V) bits residing on a previous command to transmit additional activate information to a memory device. Additional activate information may be transmitted to the memory device without increasing the tRCD time, or increasing the command/address (CA) bus pins, or adding additional circuit area, thereby reducing the impact on the performance of the memory device.

Abstract: Apparatus and methods for page-based soft post package repair are disclosed. Based on data stored in a storage element, an address may be decoded to a prime row, a row-based redundant row, or a page-based redundant row. A match logic circuit may determine whether the address corresponds to a defective prime row and generate a match signal. A decoder can select a redundant row to be accessed instead of a prime row in response to the match signal indicating that the address data corresponding to the address to be accessed matches defective address data stored in a volatile memory. A page-based redundant row allows for page-by-page substitution for defective memory, allowing functional portions of memory to continue to be used.

Abstract: A method and a device is provided for utilizing unused valid (V) bits residing on a previous command to transmit additional activate information to a memory device. Additional activate information may be transmitted to the memory device without increasing the tRCD time, or increasing the command/address (CA) bus pins, or adding additional circuit area, thereby reducing the impact on the performance of the memory device.

Abstract: Apparatus and methods for page-based soft post package repair are disclosed. Based on data stored in a storage element, an address may be decoded to a prime row, a row-based redundant row, or a page-based redundant row. A match logic circuit may determine whether the address corresponds to a defective prime row and generate a match signal. A decoder can select a redundant row to be accessed instead of a prime row in response to the match signal indicating that the address data corresponding to the address to be accessed matches defective address data stored in a volatile memory. A page-based redundant row allows for page-by-page substitution for defective memory, allowing functional portions of memory to continue to be used.

Abstract: A method and a device is provided for utilizing unused valid (V) bits residing on a previous command to transmit additional activate information to a memory device. Additional activate information may be transmitted to the memory device without increasing the tRCD time, or increasing the command/address (CA) bus pins, or adding additional circuit area, thereby reducing the impact on the performance of the memory device.