Abstract: A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.

Abstract: A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.

Abstract: A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.

Abstract: An integrated laser/non-linear device includes a semiconductor/dielectric substrate, a nonlinear device fabricated on the semiconductor/dielectric substrate and a pump laser fabricated on the same semiconductor/dielectric substrate.

Abstract: A quantum dot (QD) laser comprises a semiconductor substrate and an active region epitaxially deposited on the semi-conductor substrate. The active region includes a plurality of barrier layers and a plurality of QD layers interposed between each of the plurality of barrier layers. A net compressive strain associated with the plurality of QD layers is maintained below a maximum allowable strain to prevent formation of misfit dislocations within the active region of the QD laser.

Abstract: A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.

Abstract: Reconfigurable non-reciprocal integrated-optics-based devices are disclosed. The non-reciprocal devices include: a phase-sensitive device, such as a microring waveguide; a magneto-optic layer; and an electromagnet. These elements are operatively coupled such that a magnetic field generated by current flow through the electromagnet gives rise to a non-reciprocal phase shift in the phase-sensitive device. The non-reciprocal phase shift leads to a difference in the way that a light signal travels in the forward and backward directions through one or more bus waveguides that are operatively coupled with the phase-sensitive element. The non-reciprocity is reversible by reversing the direction of drive current flow in the electromagnet, which enables the inter-port connectivity of the ports of these bus waveguides to be reconfigured based on the direction of the drive current flow. Examples of reconfigurable isolator and circulator embodiments are described.

Abstract: Reconfigurable non-reciprocal integrated-optics-based devices are disclosed. The non-reciprocal devices include: a phase-sensitive device, such as a microring waveguide; a magneto-optic layer; and an electromagnet. These elements are operatively coupled such that a magnetic field generated by current flow through the electromagnet gives rise to a non-reciprocal phase shift in the phase-sensitive device. The non-reciprocal phase shift leads to a difference in the way that a light signal travels in the forward and backward directions through one or more bus waveguides that are operatively coupled with the phase-sensitive element. The non-reciprocity is reversible by reversing the direction of drive current flow in the electromagnet, which enables the inter-port connectivity of the ports of these bus waveguides to be reconfigured based on the direction of the drive current flow. Examples of reconfigurable isolator and circulator embodiments are described.

Abstract: A fiber-optic gyroscope is disclosed, wherein the fiber-optic gyroscope has counter-propagating light signals in a closed-loop optical path, and where the light signals are characterized by an orthogonality that mitigates optical coupling between them. In some embodiments, the orthogonality is a difference in frequency of the two signals. In some embodiments, the orthogonality is a difference in the polarizations of the two signals. The orthogonality is imparted on the light signals by a non-reciprocal element that is optically coupled with the optical path. In some embodiments, a gain-balancing filter is also included to ensure that the loop gain for each light signal is substantially equal to one. In some embodiments, the light signals are provided by a gain element that is characterized by inhomogeneous broadening.

Abstract: A dual-comb optical-frequency comb generator includes a tunable comb-generating laser, a coarse-comb generator, a fine-comb generator, a second harmonic generator, a coarse-comb offset photodetector, a dual-comb offset photodetector, and a fine-comb photodetector. The coarse comb is self-referencing and coupled to the fine comb so as to enable absolute determination of the frequencies of the fine comb.

Abstract: A dual-comb optical-frequency comb generator includes a tunable comb-generating laser, a coarse-comb generator, a fine-comb generator, a second harmonic generator, a coarse-comb offset photodetector, a dual-comb offset photodetector, and a fine-comb photodetector. The coarse comb is self-referencing and coupled to the fine comb so as to enable absolute determination of the frequencies of the fine comb.

Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of HI-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.

Abstract: A fiber-optic gyroscope is disclosed, wherein the fiber-optic gyroscope has counter-propagating light signals in a closed-loop optical path, and where the light signals are characterized by an orthogonality that mitigates optical coupling between them. In some embodiments, the orthogonality is a difference in frequency of the two signals. In some embodiments, the orthogonality is a difference in the polarizations of the two signals. The orthogonality is imparted on the light signals by a non-reciprocal element that is optically coupled with the optical path. In some embodiments, a gain-balancing filter is also included to ensure that the loop gain for each light signal is substantially equal to one. In some embodiments, the light signals are provided by a gain element that is characterized by inhomogeneous broadening.

Abstract: A method of fabricating a heterogeneous semiconductor wafer includes depositing a III-V type semiconductor epitaxial layer on a first wafer having a semiconductor substrate. The first wafer is then bonded to a second wafer having a patterned silicon layer formed on a semiconductor substrate, wherein the III-V type semiconductor epitaxial layer is bonded to the patterned silicon layer of the second wafer. The semiconductor substrate associated with the first wafer is removed to expose the III-V type semiconductor epitaxial layer.

Abstract: A method of fabricating a heterogeneous semiconductor wafer includes depositing a III-V type semiconductor epitaxial layer on a first wafer having a semiconductor substrate. The first wafer is then bonded to a second wafer having a patterned silicon layer formed on a semiconductor substrate, wherein the III-V type semiconductor epitaxial layer is bonded to the patterned silicon layer of the second wafer. The semiconductor substrate associated with the first wafer is removed to expose the III-V type semiconductor epitaxial layer.

Abstract: A method for realizing a semiconductor waveguide and an ultra-low-loss dielectric waveguide disposed on the same substrate is disclosed. The method includes forming a partial dielectric waveguide structure on the substrate, wherein the dielectric waveguide is annealed to reduce hydrogen incorporation, and wherein the top cladding of the dielectric waveguide is only partially formed by a first dielectric layer. A second substrate comprising a semiconductor layer having a second dielectric layer disposed on its top surface is bonded to the first substrate such that the first and second dielectric layers collectively form the complete top cladding for the dielectric waveguide. The second substrate is then removed and the semiconductor layer is patterned to define the semiconductor waveguide core.

Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of HI-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.

Abstract: Composite epitaxial materials that comprise semimetallic ErAs nanoparticles or nanoislands epitaxially embedded in a semiconducting In0.53Ga0.47As matrix both as superlattices and randomly distributed throughout the matrix are disclosed. The presence of these particles increases the free electron concentration in the material while providing scattering centers for phonons. Electron concentration, mobility, and Seebeck coefficient of these materials are discussed and their potential for use in thermoelectric power generators is postulated. These composite materials in accordance with the present invention have high electrical conductivity, low thermal conductivity, and a high Seebeck coefficient. The ErAs nanoislands provides additional scattering mechanism for the mid to long wavelength phonon—the combination reduces the thermal conductivity below the alloy limit.

Abstract: A method for realizing a semiconductor waveguide and an ultra-low-loss dielectric waveguide disposed on the same substrate is disclosed. The method includes forming a partial dielectric waveguide structure on the substrate, wherein the dielectric waveguide is annealed to reduce hydrogen incorporation, and wherein the top cladding of the dielectric waveguide is only partially formed by a first dielectric layer. A second substrate comprising a semiconductor layer having a second dielectric layer disposed on its top surface is bonded to the first substrate such that the first and second dielectric layers collectively form the complete top cladding for the dielectric waveguide. The second substrate is then removed and the semiconductor layer is patterned to define the semiconductor waveguide core.

Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of HI-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.