Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

Abstract: Fire resistant glazing units, processes for the manufacture of such fire resistant glazing units, the use of fire resistant glazing units in construction, and constructions comprising such glazing units. A fire resistant glazing unit may include two panes of glass which are arranged together with a seal to enclose a fire-resistant interlayer. The seal is adapted to breach in the event of a fire causing increased pressure between the panes, releasing pressure before it can build up and cause a pane to break in an unfavourable manner.

Abstract: An apparatus for processing substrates is provided. A chamber comprises a chamber top and a chamber bottom, wherein the chamber bottom is detachably connected to the chamber top. At least one substrate support supports at least one substrate in the chamber. A substrate port allows a substrate to move into or out of the chamber. A seal creates a vacuum seal when the chamber top is on the chamber bottom. A manipulation system for manipulating an interior of the chamber when the chamber top is spaced apart from the chamber bottom comprises 1) a sealing wall for creating a seal between the chamber top and chamber bottom when the chamber top is spaced apart from the chamber bottom and 2) a manipulation port in the sealing wall, wherein the manipulation port allows a mechanical force to be provided through the sealing wall inside the chamber.

Abstract: Systems and methods for applying three or more states for achieving a high aspect ratio dielectric etch operation are described. In one of the methods, a middle state is introduced between a high state and a low state. The middle state is applied to both a source radio frequency (RF) generator and a bias radio frequency (RF) generator. During the middle state, RF power is maintained to be between a high amount of RF power associated with the high state and a low amount of RF power associated with the low state to achieve the high aspect ratio dielectric etch.

Abstract: Fire resistant glazing units, processes for the manufacture of such fire resistant glazing units, the use of fire resistant glazing units in construction, and constructions comprising such glazing units. A fire resistant glazing unit may include two panes of glass which are arranged together with a seal to enclose a fire-resistant interlayer. The seal is adapted to breach in the event of a fire causing increased pressure between the panes, releasing pressure before it can build up and cause a pane to break in an unfavourable manner.

Abstract: The present disclosure provides systems and methods that include or otherwise leverage an artificial intelligence system and/or provide user interface mechanisms particularly suited for interacting and/or interfacing with an artificial intelligence system. A computing system can include a camera, a light-emitting device, and an artificial intelligence system that comprises one or more machine-learned models. The computing system can include a processor and one or more non-transitory computer-readable media that stores instructions that, when executed, cause the processor to obtain an image of a scene captured by the camera; generate an attention output that describes at least one region of the scene that includes a subject of a processing operation performed by the artificial intelligence system; and control the light-emitting device to emit light onto or adjacent a region of the scene that includes the subject of the processing operation performed by the artificial intelligence system.

Abstract: Systems and methods for active control of radial etch uniformity are described. One of the methods includes generating a radio frequency (RF) signal having a fundamental frequency and generating another RF signal having a harmonic frequency. The harmonic frequency, or a phase, or a parameter level, or a combination thereof of the other RF signal are controlled to control harmonics of RF plasma sheath within a plasma chamber to achieve radial etch uniformity.

Abstract: Systems and methods for applying three or more states for achieving a high aspect ratio dielectric etch operation are described. In one of the methods, a middle state is introduced between a high state and a low state. The middle state is applied to both a source radio frequency (RF) generator and a bias radio frequency (RF) generator. During the middle state, RF power is maintained to be between a high amount of RF power associated with the high state and a low amount of RF power associated with the low state to achieve the high aspect ratio dielectric etch.

Abstract: An upper electrode for use in a substrate processing system includes a lower surface. The lower surface includes a first portion and a second portion and is plasma-facing. The first portion includes a first surface region that has a first thickness. The second portion includes a second surface region that has a varying thickness such that the second portion transitions from a second thickness to the first thickness.

Abstract: A substrate support assembly comprises a ceramic puck comprising a substrate receiving surface, and having embedded therein: (i) an electrode to generate an electrostatic force to retain a substrate placed on the substrate receiving surface; and (ii) a heater to heat the substrate, the heater comprising a plurality of spaced apart heater coils. A compliant layer bonds the ceramic puck to a base, the compliant layer comprising a silicon material. The base comprises a channel to circulate fluid therethrough, the channel having a channel inlet and a channel terminus.

Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

Abstract: The disclosed technology includes switching between a normal or standard-lens UI and a panoramic or wide-angle photography UI responsive to a zoom gesture. In one implementation, a user gesture corresponding to a “zoom-out” command, when received at a mobile computing device associated with a minimum zoom state, may trigger a switch from a standard lens photo capture UI to a wide-angle photography UI. In another implementation, a user gesture corresponding to a “zoom-in” command, when received at a mobile computing device associated with a nominal wide-angle state, may trigger a switch from a wide-angle photography UI to a standard lens photo capture UI.

Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

Abstract: A substrate support assembly comprises a ceramic puck comprising a substrate receiving surface, and having embedded therein: (i) an electrode to generate an electrostatic force to retain a substrate placed on the substrate receiving surface; and (ii) a heater to heat the substrate, the heater comprising a plurality of spaced apart heater coils. A compliant layer bonds the ceramic puck to a base, the compliant layer comprising a silicon material. The base comprises a channel to circulate fluid therethrough, the channel having a channel inlet and a channel terminus.

Abstract: A substrate support assembly comprises a ceramic puck having a substrate receiving surface and an opposing backside surface. The ceramic puck has an electrode and a heater embedded therein. The heater comprises first and second coils that are radially spaced apart. A base of the support assembly comprises a channel to circulate fluid therethrough, the channel comprising an inlet and terminus that are adjacent to one another so that the channel loops back upon itself. A compliant layer bonds the ceramic puck to the base.

Abstract: A chamber filler kit for balancing electric fields in a dielectric etch chamber is provided. A transport module filler comprises an electrical conductive body, an etch resistant surface, wherein the etch resistant surface comprises an inner curved surface, which matches a partial cylindrical bore of the etch chamber, and a wafer transport aperture, wherein the transport module filler fits into a transport aperture of the etch chamber. A transport module sealer plate is adapted to be mechanically and electrically connected to the partially cylindrical chamber body and the transport module filler. A bias housing filler is adapted to be mechanically and electrically connected to a bias housing wall and comprises a conductive body and an etch resistant surface, wherein the etch resistant surface comprises a curved surface, which matches the partial cylindrical bore.

Abstract: A method for etching features in a silicon oxide containing etch layer disposed below a patterned mask in a chamber is provided. An etch gas comprising a tungsten containing gas is flowed into the chamber. The etch gas comprising the tungsten containing gas is formed into a plasma. The silicon oxide etch layer is exposed to the plasma formed from the etch gas comprising the tungsten containing gas. Features are etched in the silicon oxide etch layer while exposed to the plasma formed from the etch gas comprising the tungsten containing gas.

Abstract: The disclosed technology includes switching between a normal or standard-lens UI and a panoramic or wide-angle photography UI responsive to a zoom gesture. In one implementation, a user gesture corresponding to a “zoom-out” command, when received at a mobile computing device associated with a minimum zoom state, may trigger a switch from a standard lens photo capture UI to a wide-angle photography UI. In another implementation, a user gesture corresponding to a “zoom-in” command, when received at a mobile computing device associated with a nominal wide-angle state, may trigger a switch from a wide-angle photography UI to a standard lens photo capture UI.

Abstract: A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.

Abstract: A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support arm is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber.