Abstract: A method of manufacturing a getter structure, including forming a support structure having a support perimeter, where the support structure is disposed over a substrate. In addition, the method includes forming a non-evaporable getter layer having an exposed surface area, where the non-evaporable getter layer is disposed over the support structure, and includes forming a vacuum gap between the substrate and the non-evaporable getter layer. The non-evaporable getter layer extends beyond the support perimeter of the support structure increasing the exposed surface area.

Abstract: An electrical device includes a plurality of integrated circuits respectively fabricated in a first substrate bonded to a second substrate by a bond that deforms above, but not below, a deformation condition. The deformation condition can be a predetermined pressure from opposing surfaces on the first and second substrates or it can be a predetermined combination of temperature and pressure from opposing surfaces on the first and second substrates.

Abstract: A method of activating a getter structure, including illuminating a photomask having a transmissive region substantially aligned with the getter structure, transmitting a portion of the photons through, the transmissive region. In addition the method includes absorbing the photons, transmitted through the transmissive region, in the getter structure and heating the getter structure with the absorbed photons.

Abstract: A device including a substrate, a getter structure coupled to the substrate, and a photomask disposed over the getter structure. The photomask has a substantially transmissive and a substantially non-transmissive region. The substantially transmissive region substantially aligns with the getter structure.

Abstract: An integrated circuit includes a substrate having an etched surface and a non-etched surface. The etched surface contains circuit elements and the non-etched surface contains a bonding surface. The non-etched surface is located at a predetermined height from the etched surface. Bonding this integrated circuit with another substrate creates a wide-gap between the substrates that is preferably evacuated and hermetically sealed.

Abstract: An interconnect structure including a substrate, an interconnect device formed on the substrate, and a test device formed on the substrate.

Abstract: A vacuum device, including a substrate and a support structure having a support perimeter, where the support structure is disposed over the substrate. In addition, the vacuum device also includes a non-evaporable getter layer having an exposed surface area. The non-evaporable getter layer is disposed over the support structure, and extends beyond the support perimeter, in at least one direction, of the support structure forming a vacuum gap between the substrate and the non-evaporable getter layer increasing the exposed surface area.

Abstract: A method of manufacturing a getter structure, including forming a support structure having a support perimeter, where the support structure is disposed over a substrate. In addition, the method includes forming a non-evaporable getter layer having an exposed surface area, where the non-evaporable getter layer is disposed over the support structure, and includes forming a vacuum gap between the substrate and the non-evaporable getter layer. The non-evaporable getter layer extends beyond the support perimeter of the support structure increasing the exposed surface area.

Abstract: A micro-fabricated device, includes a support structure and a device substrate disposed a distance G from the support structure. The micro-fabricated device further includes one or more thermally isolating structures that have a characteristic length, and the one or more thermally isolating structures is thermally coupled to the device substrate and the support structure. The characteristic length is greater than said distance G.

Abstract: A micro-fabricated device, includes a support structure having an aperture formed therein, and a device substrate disposed within the aperture. The micro-fabricated device further includes a thermally isolating structure thermally coupling the device substrate to the support structure. The thermally isolating structure includes at least one n-doped region and at least one p-doped region formed on or in the thermally isolating structure and separated from each other. In addition, the thermally isolating structure includes an electrical interconnect connecting at least one n-doped region and at least one p-doped region, forming an integrated thermoelectric device.

Abstract: An interconnect structure including a substrate, an interconnect device formed on the substrate, and a test device formed on the substrate.

Abstract: Determining a beam size of an emitter for a data storage medium is disclosed. The emitter, having an emitted beam, is moved across conductor of a detector. Current through the conductor, resulting from the emitted beam as the emitter moves across the detector, is measured. The size of the emitted beam of the emitter is determined based on the position of the emitter and the measured current.

Abstract: An integrated circuit includes a substrate having an etched surface and a non-etched surface. The etched surface contains circuit elements and the non-etched surface contains a bonding surface. The non-etched surface is located at a predetermined height from the etched surface. Bonding this integrated circuit with another substrate creates a wide-gap between the substrates that is preferably evacuated and hermetically sealed.

Abstract: An integrated circuit includes a substrate having an etched surface and a non-etched surface. The etched surface contains circuit elements and the non-etched surface contains a bonding surface. The non-etched surface is located at a predetermined height from the etched surface. Bonding this integrated circuit with another substrate creates a wide-gap between the substrates that is preferably evacuated and hermetically sealed.

Abstract: An electrical device includes a plurality of integrated circuits respectively fabricated in a first substrate bonded to a second substrate by a bond that deforms above, but not below, a deformation condition. The deformation condition can be a predetermined pressure from opposing surfaces on the first and second substrates or it can be a predetermined combination of temperature and pressure from opposing surfaces on the first and second substrates.

Abstract: An interconnect structure including a substrate, an interconnect device formed on the substrate, and a test device formed on the substrate.

Abstract: An electronic device includes a non-evaporable getter material having a surface exposed to a low pressure and one or more circuit elements. The non-evaporable getter material forms at least a portion of the one or more circuit elements. The electronic device further includes one or more vacuum devices electrically coupled to the one or more circuit element.

Abstract: An electronic device that is sealed under vacuum includes a substrate, a transistor formed on the substrate, and a dielectric layer covering at least a portion of the transistor. The electronic device further includes a layer of non-evaporable getter material disposed on a portion of the dielectric layer; and a vacuum device disposed on a portion of the substrate. Electrical power pulses activate the non-evaporable getter material.

Abstract: An electronic device that is sealed under vacuum includes a substrate, a transistor formed on the substrate, and a dielectric layer covering at least a portion of the transistor. The electronic device further includes a layer of non-evaporable getter material disposed on a portion of the dielectric layer; and a vacuum device disposed on a portion of the substrate. Electrical power pulses activate the non-evaporable getter material.

Abstract: A micro pressure sensor for inclusion within a low-pressure microelectronic device enclosure. The micro pressure sensor employs an electric field created by applying a large voltage potential difference to tiny conductive elements within the micro pressure sensor. Electrons emitted via the influence of, and accelerated by, the electric field collide with gas molecules to produce positive ions. The positive ions are then accelerated toward a conductive element coupled to a circuit. The current generated by the ions within the circuit coupled to the micro pressure sensor can be measured to determine the internal pressure within the low-pressure enclosure. The micro pressure sensor is manufactured by standard semiconductor fabrication techniques, and can be economically produced in large volumes.