Abstract: Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.

Abstract: Apparatus and system for mixing gas comprising a first valve coupled to a first conduit controlling flow of a first gas, a second valve coupled to a second conduit controlling flow of a second gas, a controller controlling the valves, a base block with a first gas input coupled to the first conduit, a second gas input coupled to the second conduit and an output opening, a mixing chamber formed within the base block, wherein the mixing chamber is coupled to the first gas input and the second gas input to receive input gases, an inner block disposed within the mixing chamber, the inner block including a body with an inner volume and one or more perimeter holes formed through the body coupling the mixing chamber to the inner volume of the inner block; and a gas outlet configured to flow gas through the output opening of the base block.

Abstract: A chemical feed method and apparatus that uses the solubility limit of a specific chemical to provide a measured dose. The invention includes a container of a specific volume into which a solid chemical is placed and held. The chemical dissolves until it approaches its solubility limit. When the system requires a dose of chemical, the container is flushed and a controlled dose of the chemical is fed in to the system. The invention can be combined with kinetic dissolution to allow a larger dose from a given feeder.

Abstract: Methods and apparatus for calibrating a plurality of gas flows in a substrate processing system are provided herein. In some embodiments, a substrate processing system may include a cluster tool comprising a first process chamber and a second process chamber coupled to a central vacuum transfer chamber; a first flow controller to provide a process gas to the first process chamber; a second flow controller to provide the process gas to the second process chamber; a mass flow verifier to verify a flow rate from each of the first and second flow controllers; a first conduit to selectively couple the first flow controller to the mass flow verifier; and a second conduit to selectively couple the second flow controller to the mass flow verifier.

Abstract: The present invention provides methods and apparatus for controlling gas flow to a semiconductor-processing chamber. The invention includes deactivating ratio setpoint feedback control in a flow ratio controller; initiating gas flow through the flow ratio controller; moving valves of the flow ratio controller to a preset position based on a stored position when an upstream pressure reaches a stored upstream pressure value, wherein the stored position and the stored upstream pressure value were stored during a prior process run; determining that steady state flow ratio controller output flows have been reached; and activating ratio setpoint feedback control in the flow ratio controller. Numerous additional features are disclosed.

Abstract: Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.

Abstract: A water treatment feed device includes a hopper and a receptacle. The hopper has a granule-receiving compartment defined by an upper hopper portion and a lower V-shaped hopper portion connected to the upper hopper portion. The lower V-shaped hopper portion is fabricated from a porous material having a plurality of pores sized to at least substantially retain conventional water treatment granules therein. The receptacle has a water-receiving compartment with a weir disposed therein to divide the water-receiving compartment into a water inlet sub-compartment and a water outlet sub-compartment with the water inlet sub-compartment sized to receive the hopper loaded with conventional water treatment granules. A water treatment feed system and a method for dissolving conventional water treatment granules in water are also described.

Abstract: Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.

Abstract: A package of water treatment pellets includes a first container and a second container. The first container is fabricated from a water-dissolvable sheet material and the first container is filled with and encases the water treatment pellets. The second container is fabricated from a non-water-dissolvable, porous material and is sized and adapted to receive the first container filled with and encasing the water treatment pellets. A water treatment feeder device includes a hollow, box-shaped magazine body defining an internal magazine chamber and a plurality of porous holders disposed in the internal magazine chamber. Each one of the plurality of porous holders retains a respective one of the packages of water treatment pellets. A water treatment feeder system for a structure operative to circulate water thereabout incorporates the water treatment feeder device and the package of water treatment pellets.

Abstract: Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.

Abstract: Methods and apparatus for delivery of gas are provided herein. In some embodiments, a gas delivery system may include a premix tank having an inlet and an outlet; a plurality of gas supplies coupled to the inlet of the premix tank; a plurality of valves, each valve respectively disposed in line with a corresponding one of the plurality of gas supplies; and a conduit coupling the outlet of the premix tank to one or more gas delivery zones.

Abstract: A method and apparatus that solve the problem of accurate measurement of gas flow so that the delivery of gases in semiconductor processing may be performed with greater confidence and accuracy by performing real-time characterization of a lead-line for mass flow controller (MFC) flow verification are provided. In one embodiment a mass flow verifier (MFV) provides rate of rise information to a controller via a digital interface without correcting for lead-line influences. After receiving the rate of rise data, the tool host computer computes a gas mass correction factor in real-time based on at least one of the following: MFC temperature sensor data, lead-line temperature sensor data, lead-line pressure transducer data, and lead-line volume. The rate of rise data and gas mass correction factor are used to compute accurate mass flow. The accurate mass flow information may be used to calibrate the MFC.

Abstract: A water treatment feed device includes a hopper and a receptacle. The hopper has a granule-receiving compartment defined by an upper hopper portion and a lower V-shaped hopper portion connected to the upper hopper portion. The lower V-shaped hopper portion is fabricated from a porous material having a plurality of pores sized to at least substantially retain conventional water treatment granules therein. The receptacle has a water-receiving compartment with a weir disposed therein to divide the water-receiving compartment into a water inlet sub-compartment and a water outlet sub-compartment with the water inlet sub-compartment sized to receive the hopper loaded with conventional water treatment granules. A water treatment feed system and a method for dissolving conventional water treatment granules in water are also described.

Abstract: A package of water treatment pellets includes a first container and a second container. The first container is fabricated from a water-dissolvable sheet material and the first container is filled with and encases the water treatment pellets. The second container is fabricated from a non-water-dissolvable, porous material and is sized and adapted to receive the first container filled with and encasing the water treatment pellets. A water treatment feeder device includes a hollow, box-shaped magazine body defining an internal magazine chamber and a plurality of porous holders disposed in the internal magazine chamber. Each one of the plurality of porous holders retains a respective one of the packages of water treatment pellets. A water treatment feeder system for a structure operative to circulate water thereabout incorporates the water treatment feeder device and the package of water treatment pellets.

Abstract: Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber and a second process chamber having independent processing volumes and a plurality of shared resources between the first and second process chambers. In some embodiments, the shared resources include at least one of a shared vacuum pump, a shared gas panel, or a shared heat transfer source.

Abstract: Methods and apparatus for gas delivery to a process chamber are provided herein. In some embodiments, an apparatus for processing substrates may include a mass flow controller to provide a desired total fluid flow; a first flow control manifold comprising a first inlet, a first outlet, and a first plurality of orifices selectably coupled therebetween, wherein the first inlet is coupled to the mass flow controller; and a second flow control manifold comprising a second inlet, a second outlet, and a second plurality of orifices selectably coupled therebetween, wherein the second inlet is coupled to the mass flow controller; wherein a desired flow ratio between the first outlet and the second outlet is selectably obtainable when causing the fluid to flow through one or more of the first plurality of orifices of the first manifold and one or more of the second plurality of orifices of the second manifold.

Abstract: Methods and apparatus for calibrating a plurality of gas flows in a substrate processing system are provided herein. In some embodiments, a substrate processing system may include a cluster tool comprising a first process chamber and a second process chamber coupled to a central vacuum transfer chamber; a first flow controller to provide a process gas to the first process chamber; a second flow controller to provide the process gas to the second process chamber; a mass flow verifier to verify a flow rate from each of the first and second flow controllers; a first conduit to selectively couple the first flow controller to the mass flow verifier; and a second conduit to selectively couple the second flow controller to the mass flow verifier.

Abstract: A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The invention also includes an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and may be partially integrated or fully integrated into a processing chamber which also includes diffusion bonded layers.

Abstract: A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The invention also includes an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and the various fluid handling and monitoring components may be partially integrated or fully integrated into the substrate, depending on design and material requirements.

Abstract: A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The fluid delivery system includes an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and the various fluid handling and monitoring components may be partially integrated or fully integrated into the substrate, depending on design and material requirements.