Patents by Inventor Jon Henri
Jon Henri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11869770Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.Type: GrantFiled: July 29, 2021Date of Patent: January 9, 2024Assignee: Lam Research CorporationInventors: Nagraj Shankar, Kapu Sirish Reddy, Jon Henri, Pengyi Zhang, Elham Mohimi, Bhavin Jariwala, Arpan Pravin Mahorowala
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Publication number: 20230207274Abstract: A substrate processing system includes a gas source, an RF source, and a light source. The gas source supplies a first gas to a process module of the substrate processing system. The RF source supplies RF power to the process module to generate plasma when the first gas is supplied to the process module of the substrate processing system. The light source is coupled to the process module to introduce light into the process module during the plasma generation.Type: ApplicationFiled: May 21, 2021Publication date: June 29, 2023Inventors: Lee CHEN, Ramesh CHANDRASEKHARAN, Shaun Tyler SMITH, Yukinori SAKIYAMA, Aaron DURBIN, Jon HENRI
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Publication number: 20230112746Abstract: Various embodiments herein relate to methods, apparatus, and systems for depositing a boron-based ceramic film on a substrate. Advantageously, the boron-based ceramic films described herein can be formed at relatively low temperatures (e.g., about 600C or less), while still achieving very high quality materials that exhibit good mechanical strength (e.g., high hardness and Young's modulus), good etch selectivity, amorphous morphology, etc. The films herein also have low hydrogen content, low oxygen content, and low halide content. In many cases, the films may be formed through a reaction between a boron halide and a saturated or unsaturated hydrocarbon, in the presence of plasma.Type: ApplicationFiled: February 23, 2021Publication date: April 13, 2023Inventors: Ananda K. BANERJI, Jon HENRI, Kapu Sirish REDDY, Christopher Nicholas IADANZA
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Publication number: 20220406610Abstract: A tool and method for processing substrates by encapsulating a mask to protect from degradation during an etch-back to prevent a feature liner material from pinching off an opening during deposition-etch cycles used to fabricate high aspect ratio features with very tight critical dimension control.Type: ApplicationFiled: September 23, 2020Publication date: December 22, 2022Inventors: Kapu Sirish REDDY, Jon HENRI, Francis Sloan ROBERTS
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Publication number: 20220199417Abstract: Fabricating a semiconductor substrate by (a) vertical etching a feature having sidewalls and a depth into one or more layers formed on the semiconductor substrate and (b) depositing an amorphous carbon liner onto the sidewalls of the feature. Steps (a) and optionally (b) are iterated until the vertical etch feature has reached a desired depth. With each iteration of (a), the feature is vertical etched deeper into the one or more layers, while the amorphous carbon liner resists lateral etching of the sidewalls of the feature. With each optional iteration of (b), the deposited amorphous carbon liner on the sidewalls of the feature is replenished.Type: ApplicationFiled: March 16, 2020Publication date: June 23, 2022Inventors: Jon HENRI, Karthik S. COLINJIVADI, Francis Sloan ROBERTS, Kapu Sirish REDDY, Samantha SiamHwa TAN, Shih-Ked LEE, Eric HUDSON, Todd SHROEDER, Jialing YANG, Huifeng ZHENG
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Publication number: 20210358753Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap tilling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.Type: ApplicationFiled: July 29, 2021Publication date: November 18, 2021Inventors: Nagraj Shankar, Kapu Sirish Reddy, Jon Henri, Pengyi Zhang, Elham Mohimi, Bhavin Jariwala, Arpan Pravin Mahorowala
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Patent number: 11107683Abstract: Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.Type: GrantFiled: March 30, 2020Date of Patent: August 31, 2021Assignee: Lam Research CorporationInventors: David Charles Smith, Jon Henri, Dennis M. Hausmann, Paul C. Lemaire
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Patent number: 11094542Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.Type: GrantFiled: January 15, 2020Date of Patent: August 17, 2021Assignee: Lam Research CorporationInventors: Nagraj Shankar, Kapu Sirish Reddy, Jon Henri, Pengyi Zhang, Elham Mohimi, Bhavin Jariwala, Arpan Pravin Mahorowala
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Patent number: 11075127Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).Type: GrantFiled: July 3, 2019Date of Patent: July 27, 2021Assignee: Lam Research CorporationInventors: Seshasayee Varadarajan, Aaron R. Fellis, Andrew John McKerrow, James Samuel Sims, Ramesh Chandrasekharan, Jon Henri
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Patent number: 10804099Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.Type: GrantFiled: December 19, 2017Date of Patent: October 13, 2020Assignee: Lam Research CorporationInventors: Jon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
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Patent number: 10741458Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.Type: GrantFiled: April 27, 2018Date of Patent: August 11, 2020Assignee: Novellus Systems, Inc.Inventors: Hu Kang, Shankar Swaminathan, Adrien LaVoie, Jon Henri
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Publication number: 20200227260Abstract: Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.Type: ApplicationFiled: March 30, 2020Publication date: July 16, 2020Inventors: David Charles Smith, Jon Henri, Dennis M. Hausmann, Paul C. Lemaire
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Publication number: 20200168466Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.Type: ApplicationFiled: January 15, 2020Publication date: May 28, 2020Inventors: Nagraj Shankar, Kapu Sirish Reddy, Jon Henri, Pengyi Zhang, Elham Mohimi, Bhavin Jariwala, Arpan Pravin Mahorowala
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Patent number: 10643846Abstract: Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.Type: GrantFiled: June 28, 2018Date of Patent: May 5, 2020Assignee: Lam Research CorporationInventors: David Charles Smith, Jon Henri, Dennis M. Hausmann, Paul C. Lemaire
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Publication number: 20200066607Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).Type: ApplicationFiled: July 3, 2019Publication date: February 27, 2020Inventors: Seshasayee Varadarajan, Aaron R. Fellis, Andrew John McKerrow, James Samuel Sims, Ramesh Chandrasekharan, Jon Henri
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Patent number: 10566194Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.Type: GrantFiled: May 7, 2018Date of Patent: February 18, 2020Assignee: Lam Research CorporationInventors: Nagraj Shankar, Kapu Sirish Reddy, Jon Henri, Pengyi Zhang, Elham Mohimi, Bhavin Jariwala, Arpan Pravin Mahorowala
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Publication number: 20200006073Abstract: Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.Type: ApplicationFiled: June 28, 2018Publication date: January 2, 2020Inventors: David Charles Smith, Jon Henri, Dennis M. Hausmann, Paul C. Lemaire
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Publication number: 20190341256Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.Type: ApplicationFiled: May 7, 2018Publication date: November 7, 2019Inventors: Nagraj Shankar, Kapu Sirish Reddy, Jon Henri, Pengyi Zhang, Elham Mohimi, Bhavin Jariwala, Arpan Pravin Mahorowala
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Patent number: 10347547Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).Type: GrantFiled: August 9, 2016Date of Patent: July 9, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Seshasayee Varadarajan, Aaron R. Fellis, Andrew John McKerrow, James Samuel Sims, Ramesh Chandrasekharan, Jon Henri
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Publication number: 20180247875Abstract: Methods and apparatus to form films on sensitive substrates while preventing damage to the sensitive substrate are provided herein. In certain embodiments, methods involve forming a bilayer film on a sensitive substrate that both protects the underlying substrate from damage and possesses desired electrical properties. Also provided are methods and apparatus for evaluating and optimizing the films, including methods to evaluate the amount of substrate damage resulting from a particular deposition process and methods to determine the minimum thickness of a protective layer. The methods and apparatus described herein may be used to deposit films on a variety of sensitive materials such as silicon, cobalt, germanium-antimony-tellerium, silicon-germanium, silicon nitride, silicon carbide, tungsten, titanium, tantalum, chromium, nickel, palladium, ruthenium, or silicon oxide.Type: ApplicationFiled: April 27, 2018Publication date: August 30, 2018Inventors: Hu Kang, Shankar Swaminathan, Adrien LaVoie, Jon Henri