Patents by Inventor Jon Henri
Jon Henri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8728956Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.Type: GrantFiled: April 11, 2011Date of Patent: May 20, 2014Assignee: Novellus Systems, Inc.Inventors: Adrien LaVoie, Shankar Swaminathan, Hu Kang, Ramesh Chandrasekharan, Tom Dorsh, Dennis M. Hausmann, Jon Henri, Thomas Jewell, Ming Li, Bryan Schlief, Antonio Xavier, Thomas W. Mountsier, Bart J. van Schravendijk, Easwar Srinivasan, Mandyam Sriram
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Publication number: 20140113457Abstract: The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques.Type: ApplicationFiled: December 30, 2013Publication date: April 24, 2014Inventors: James S. Sims, Jon Henri, Kathryn M. Kelchner, Sathish Babu S. V. Janjam, Shane Tang
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Patent number: 8669181Abstract: Films having high hermeticity and a low dielectric constant can be used as copper diffusion barrier films, etch stop films, CMP stop films and other hardmasks during IC fabrication. Hermetic films can protect the underlying layers, such as layers of metal and dielectric, from exposure to atmospheric moisture and oxygen, thereby preventing undesirable oxidation of metal surfaces and absorption of moisture by a dielectric. Specifically, a bi-layer film having a hermetic bottom layer composed of hydrogen doped carbon and a low dielectric constant (low-k) top layer composed of low-k silicon carbide (e.g., high carbon content hydrogen doped silicon carbide) can be employed. Such bi-layer film can be deposited by PECVD methods on a partially fabricated semiconductor substrate having exposed layers of dielectric and metal.Type: GrantFiled: February 22, 2011Date of Patent: March 11, 2014Assignee: Novellus Systems, Inc.Inventors: Yongsik Yu, Pramod Subramonium, Zhiyuan Fang, Jon Henri, Elizabeth Apen, Dan Vitkavage
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Publication number: 20140057454Abstract: High-deposition rate methods for forming transparent ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers are provided. The methods involve placing a wafer on a powered electrode such as a powered pedestal for plasma-enhanced deposition. According to various embodiments, the deposition is run at low hydrocarbon precursor partial pressures and/or low process temperatures. Also provided are ceramic wafer pedestals with multiple electrode planes embedded with the pedestal are provided. According to various embodiments, the pedestals have multiple RF mesh electrode planes that are connected together such that all the electrode planes are at the same potential.Type: ApplicationFiled: August 23, 2013Publication date: February 27, 2014Applicant: Novellus Systems, Inc.Inventors: Pramod Subramonium, Aaron Bingham, Tim Thomas, Jon Henri, Greg Farhner
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Publication number: 20140053867Abstract: Improved methods and apparatuses for removing residue from the interior surfaces of the deposition reactor are provided. The methods involve increasing availability of cleaning reagent radicals inside the deposition chamber by generating cleaning reagent radicals in a remote plasma generator and then further delivering in-situ plasma energy while the cleaning reagent mixture is introduced into the deposition chamber. Certain embodiments involve a multi-stage process including a stage in which the cleaning reagent mixture is introduced at a high pressure (e.g., about 0.6 Torr or more) and a stage the cleaning reagent mixture is introduced at a low pressure (e.g., about 0.6 Torr or less).Type: ApplicationFiled: October 30, 2013Publication date: February 27, 2014Applicant: Novellus Systems, Inc.Inventors: Zhiyuan Fang, Pramod Subramonium, Jon Henri, Keith Fox
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Publication number: 20140051262Abstract: Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.Type: ApplicationFiled: May 15, 2012Publication date: February 20, 2014Inventors: Adrien Lavoie, Bhadri Varadarajan, Jon Henri, Dennis Hausmann
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Patent number: 8647993Abstract: Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.Type: GrantFiled: May 15, 2012Date of Patent: February 11, 2014Assignee: Novellus Systems, Inc.Inventors: Adrien LaVoie, Bhadri Varadarajan, Jon Henri, Dennis Hausmann
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Patent number: 8637411Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.Type: GrantFiled: September 23, 2011Date of Patent: January 28, 2014Assignee: Novellus Systems, Inc.Inventors: Shankar Swaminathan, Jon Henri, Dennis M. Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi K. Kattige, Bart J. van Schravendijk, Andrew J. McKerrow
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Patent number: 8591659Abstract: Improved methods and apparatuses for removing residue from the interior surfaces of the deposition reactor are provided. The methods involve increasing availability of cleaning reagent radicals inside the deposition chamber by generating cleaning reagent radicals in a remote plasma generator and then further delivering in-situ plasma energy while the cleaning reagent mixture is introduced into the deposition chamber. Certain embodiments involve a multi-stage process including a stage in which the cleaning reagent mixture is introduced at a high pressure (e.g., about 0.6 Torr or more) and a stage the cleaning reagent mixture is introduced at a low pressure (e.g., about 0.6 Torr or less).Type: GrantFiled: January 16, 2009Date of Patent: November 26, 2013Assignee: Novellus Systems, Inc.Inventors: Zhiyuan Fang, Pramod Subramonium, Jon Henri, Keith Fox
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Patent number: 8592328Abstract: Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.Type: GrantFiled: March 7, 2012Date of Patent: November 26, 2013Assignee: Novellus Systems, Inc.Inventors: Dennis Hausmann, Jon Henri, Bart van Schravendijk, Easwar Srinivasan
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Publication number: 20130196516Abstract: Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.Type: ApplicationFiled: May 15, 2012Publication date: August 1, 2013Inventors: Adrien Lavoie, Bhadri Varadarajan, Jon Henri, Dennis Hausmann
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Publication number: 20130189854Abstract: Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.Type: ApplicationFiled: March 7, 2012Publication date: July 25, 2013Inventors: Dennis Hausmann, Jon Henri, Bart van Schravendijk, Easwar Srinivasan
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Patent number: 8435608Abstract: Provided are plasma enhanced chemical vapor deposition methods of depositing smooth and conformal ashable hard mask films on substrates containing raised or recessed features. The methods involve using precursors having relatively high C:H ratios, such as acetylene (C:H ratio of 1), and plasmas having low ion energies and fluxes. According to various embodiments, the methods involve depositing smooth ashable hard mask films using high frequency radio frequency-generated plasmas with no low frequency component and/or relatively high pressures (e.g., 2-5 Torr). Also provided are methods of depositing ashable hard mask films having good selectivity and improved side wall coverage and roughness. The methods involve depositing a first ashable hard mask film on a substrate having a feature using a process optimized for selectivity and/or optical properties and then depositing a smoothing layer on the first ashable hard mask film using an HF-only process.Type: GrantFiled: June 27, 2008Date of Patent: May 7, 2013Assignee: Novellus Systems, Inc.Inventors: Pramod Subramonium, Zhiyuan Fang, Shawn Hancock, Mike Pierce, Jon Henri
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Patent number: 8362571Abstract: Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide amorphous carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.Type: GrantFiled: January 28, 2011Date of Patent: January 29, 2013Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, James S. Sims, Mandyam Sriram, Seshasayee Varadarajan, Haiying Fu, Pramod Subramonium, Jon Henri, Sirish Reddy
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Publication number: 20120258261Abstract: A method for depositing a film includes arranging a substrate in a plasma enhanced chemical vapor deposition chamber. A first ashable hardmask (AHM) layer that is carbon-based is deposited on the substrate. During the depositing of the first AHM layer, doping is performed with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide. An atomic percentage of the at least one dopant is greater than or equal to 5% of the first AHM layer.Type: ApplicationFiled: April 10, 2012Publication date: October 11, 2012Applicant: Novellus Systems, Inc.Inventors: Sirish Reddy, Alice Hollister, Pramod Subramonium, Jon Henri, Chunhai Ji, Zhi Yuan Fang
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Patent number: 8110493Abstract: A method for forming a PECVD deposited amorphous carbon or ashable hard mask (AHM) in a trench or a via with less than 30% H content at a process temperature below 500° C., e.g., about 400° C. produces low H content hard masks with high selectivity and little or no hard mask on the sidewalls. The deposition method utilizes a pulsed precursor delivery with a plasma etch while the precursor flow is off.Type: GrantFiled: March 14, 2008Date of Patent: February 7, 2012Assignee: Novellus Systems, Inc.Inventors: Pramod Subramonium, Zhiyuan Fang, Jon Henri
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Publication number: 20120028454Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.Type: ApplicationFiled: September 23, 2011Publication date: February 2, 2012Inventors: Shankar Swaminathan, Jon Henri, Dennis M. Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi K. Kattige, Bart J. van Schravendijk, Andrew J. McKerrow
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Patent number: 8100081Abstract: The present invention provides methods and apparatuses for removing unwanted film from the edge area of substrate using remotely-generated plasmas. Activated plasma species are directed to the edge of the substrate to contact and remove the unwanted film, while intrusion of the activated species to areas above the active circuit region (where the film is desired) is suppressed. In certain embodiments, intrusion of the activated species is suppressed by the use of a purge gas and/or the use of materials that promote recombination of plasma species. In particular embodiments, atomic oxygen is used to remove ashable films from the edge of semiconductor wafers.Type: GrantFiled: August 31, 2006Date of Patent: January 24, 2012Assignee: Novellus Systems, Inc.Inventors: Jon Henri, Henner Meinhold, Christopher Gage, Dan Doble
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Publication number: 20110256734Abstract: Described are methods of making SiN materials on substrates, particularly SiN thin films on semiconductor substrates. Improved SiN films made by the methods are also included.Type: ApplicationFiled: April 11, 2011Publication date: October 20, 2011Inventors: Dennis M. Hausmann, Jon Henri, Mandyam Sriram, Bart J. van Schravendijk
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Publication number: 20110256726Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.Type: ApplicationFiled: April 11, 2011Publication date: October 20, 2011Inventors: Adrien LaVoie, Shankar Swaminathan, Hu Kang, Ramesh Chandrasekharan, Tom Dorsh, Dennis M. Hausmann, Jon Henri, Thomas Jewell, Ming Li, Bryan Schlief, Antonio Xavier, Thomas W. Mountsier, Bart J. van Schravendijk, Easwar Srinivasan, Mandyam Sriram