Abstract: Systems, apparatuses, and methods for command queue management and configurable memory status in a memory. A memory may include a controller and one or more memory integrated circuit chips, which each include memory arrays. The controller may send commands, such as read or write commands, to the one or more memory integrated circuit chips. The memory integrated circuit chips may maintain a command queue of the commands sent from the controller, thereby relieving the controller from such responsibility. Further, the memory integrated circuit chips may send an indication of an error in executing the commands, thereby relieving the controller from constant polling of the memory integrated circuit chips as to status.

Abstract: A data storage device includes a memory (including a single level cell (SLC) memory portion and a multilevel cell (MLC) memory portion), a plurality of data latches, and routing circuitry coupled to the plurality of data latches. The routing circuitry is configured to cause write data, received from a controller, to be stored at a data latch of the plurality of data latches. The routing circuitry is further configured to cause the write data to be copied from the data latch to a particular portion of the memory based on receiving a program mode command after the write data is stored at the data latch, where the program mode command indicates the particular portion as one of the SLC memory portion or the MLC memory portion.

Abstract: Systems, apparatuses, and methods may be provided that adapt to trim set advancement. Trim set advancement may be a change in trim sets over time. A cell of a semiconductor memory may have a first charge level and be programmed with a first trim set. The cell may be reprogrammed by raising the first charge level to a second charge level that corresponds to the cell programmed with a second trim set.

Abstract: A controller of a non-volatile memory system may be configured to identify bits of data to be stored in memory elements of non-volatile memory that are identified as unreliable. The controller may be configured to bias at least some of these bits to a predetermined logic value at which the bits are likely to be read from the unreliable memory elements. The controller may do so using a biasing key that the controller generates based on identification of the bits. Subsequently, when the data is read, the controller may assign log likelihood ratio values for the bits to correspond to a percent likelihood of the bits being biased to the predetermined logic value. The bits may also be unbiased using the biasing key.

Abstract: A population of memory cells are programmed and an indicator of a first number of the memory cells programmed to a first state is recorded. Subsequently, a first read operation is performed using a first set of read parameters to identify a second number of the memory cells that are read as being in the first state. The difference between the first number and the second number is determined and a second set of read parameters for a second read (reread) is selected accordingly.

Abstract: A system for improving the management and usage of blocks based on intrinsic endurance may be used to improve memory usage for flash memory, such as a memory card. The overall card endurance may be extended by cycling blocks with higher intrinsic endurance over the lowest endurance target of the worst block. This may be accomplished by managing blocks with different intrinsic endurance values internally or by partitioning the blocks with different intrinsic endurance values externally for different usage.

Abstract: A memory system and method for reducing read disturb errors are disclosed. In one embodiment, a memory system is provided comprising a plurality of blocks of memory and a controller. The controller is configured to detect a read disturb error in a block, identify data that caused the read disturb error, and move the data that caused the read disturb error to a block with a higher read endurance. This can be done by assigning read counters to blocks to determine frequently-read data, and storing that data in a separate block until it is less frequently read and will likely not cause additional read disturb errors.

Abstract: Systems, apparatuses, and methods for command queue management and configurable memory status in a memory. A memory may include a controller and one or more memory integrated circuit chips, which each include memory arrays. The controller may send commands, such as read or write commands, to the one or more memory integrated circuit chips. The memory integrated circuit chips may maintain a command queue of the commands sent from the controller, thereby relieving the controller from such responsibility. Further, the memory integrated circuit chips may send an indication of an error in executing the commands, thereby relieving the controller from constant polling of the memory integrated circuit chips as to status.

Abstract: Systems, apparatuses, and methods may be provided that adapt to trim set advancement. Trim set advancement may be a change in trim sets over time. A cell of a semiconductor memory may have a first charge level and be programmed with a first trim set. The cell may be reprogrammed by raising the first charge level to a second charge level that corresponds to the cell programmed with a second trim set.

Abstract: Apparatus and methods implemented therein are disclosed for storing data in flash memories. The apparatus comprises a flash memory having several physical blocks, a logical to virtual mapping table, a virtual to physical mapping table and a memory controller. The memory controller retrieves a virtual block address from the logical to virtual mapping table. The virtual block address corresponds to an entry in the virtual to physical mapping table. The entry in the virtual to physical mapping table contains a reference to a physical block. The memory controller uses the virtual block address to retrieve the reference to the physical block and stores data in the physical block. The memory controller copies the stored data from the physical block to a second physical block. The memory controller then replaces the reference to the physical block contained in the entry of the virtual to physical mapping table with a reference to the second physical block.

Abstract: A method, system and graphical user interface for configuring a simulator. A graphical user interface may be used to define a configurable device profile, where a large number of devices for simulation by a simulator may be created based upon the configurable device profile. Once created, the devices may be individually configured and/or configured in groups. Additionally, the configuration of the devices may determine how the simulator generates and/or outputs simulated device data for the devices. For example, an attribute may be associated with a device which defines a format of the simulated device data, a rate at which the simulated device data is output, a range of values for the simulated device data, or an operating parameter of the device. An attribute specifying the communicative coupling of the devices may also be defined. Further, the simulated device data may include a data value.

Abstract: A method and system for simulating a plurality of devices are disclosed. A simulator configured to simulate a plurality of devices may output simulated device data for the plurality of devices, where the output of the simulated device data may be performed based upon execution of commands by the simulator. The commands may be received from a device abstraction layer in response to a request from the simulator for any commands associated with the plurality of devices. Additionally, the simulated device data may be communicated to a component coupled to the simulator, where a result of the processing of the simulated device data by the component may be used to analyze the performance of the component. Further, other commands may be executed by simulator for changing the frequency at which simulated device data is output, for performing another operation defined during configuration of the simulator, etc.

Abstract: A memory device cooperating with a memory controller scrambles each unit of data using a selected scrambling key before storing it in an array of nonvolatile memory cells. This helps to reduce program disturbs, user read disturbs, and floating gate to floating gate coupling that result from repeated and long term storage of specific data patterns. For a given page of data having a logical address and for storing at a physical address, the key is selected from a finite sequence thereof as a function of both the logical address and the physical address. In a block management scheme the memory array is organized into erase blocks, the physical address is the relative page number in each block. When logical address are grouped into logical groups and manipulated as a group and each group is storable into a sub-block, the physical address is the relative page number in the sub-block.

Abstract: A memory system includes a controller and a memory array that stores partial-page data and complete-page data in separate areas. Data received from a host is sent from a memory controller to an on-chip cache prior to determining whether the data is partial-page data or complete-page data. After a determination is made, the data is stored at an address in the corresponding area.

Abstract: A method and system for simulating a plurality of devices are disclosed. A simulator configured to simulate a plurality of devices may output simulated device data for the plurality of devices, where the output of the simulated device data may be performed based upon execution of commands by the simulator. The commands may be received from a device abstraction layer in response to a request from the simulator for any commands associated with the plurality of devices. Additionally, the simulated device data may be communicated to a component coupled to the simulator, where a result of the processing of the simulated device data by the component may be used to analyze the performance of the component. Further, other commands may be executed by simulator for changing the frequency at which simulated device data is output, for performing another operation defined during configuration of the simulator, etc.

Abstract: A method includes receiving hard bit data and soft bit data corresponding to a portion of a memory, where each storage element of the memory stores multiple bits per storage element. The hard bit data and the soft bit data is received in connection with reading a single bit of the multiple bits from each storage element in the portion of the memory based on one or more first read voltages. One or more second read voltages based on the hard bit data and the soft bit data are generated in response to a read voltage update operation. The memory reads data from the portion of the memory using the one or more second read voltages.

Abstract: A system for improving the management and usage of blocks based on intrinsic endurance may be used to improve memory usage for flash memory, such as a memory card. The overall card endurance may be extended by cycling blocks with higher intrinsic endurance over the lowest endurance target of the worst block. This may be accomplished by managing blocks with different intrinsic endurance values internally or by partitioning the blocks with different intrinsic endurance values externally for different usage.

Abstract: A method includes receiving hard bit data and soft bit data corresponding to a portion of a memory, where each storage element of the memory stores multiple bits per storage element. The hard bit data and the soft bit data is received in connection with reading a single bit of the multiple bits from each storage element in the portion of the memory based on one or more first read voltages. One or more second read voltages based on the hard bit data and the soft bit data are generated in response to a read voltage update operation. The memory reads data from the portion of the memory using the one or more second read voltages.

Abstract: A method of storing data onto a non-volatile memory includes receiving, from a host, first data that is originally assigned to a first storage area, programming the first data to a second storage area, receiving second data from the host, and while receiving the second data from the host, programming, to the first storage area, the first data that has been programmed to the second storage area, wherein the second data is received from the host simultaneously with the first data being programmed to the first storage area. The second storage area is capable of having data stored thereon faster than the first storage area.

Abstract: A memory device cooperating with a memory controller scrambles each unit of data using a selected scrambling key before storing it in an array of nonvolatile memory cells. This helps to reduce program disturbs, user read disturbs, and floating gate to floating gate coupling that result from repeated and long term storage of specific data patterns. For a given page of data having a logical address and for storing at a physical address, the key is selected from a finite sequence thereof as a function of both the logical address and the physical address. In a block management scheme the memory array is organized into erase blocks, the physical address is the relative page number in each block. When logical address are grouped into logical groups and manipulated as a group and each group is storable into a sub-block, the physical address is the relative page number in the sub-block.