Patents by Inventor Jong In Yang

Jong In Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130159798
    Abstract: A non-volatile memory device and an operating method thereof are provided. The non-volatile memory device includes a memory unit including a plurality of memory blocks and a cam block, a peripheral circuit unit configured to program memory cells included in the plurality of memory blocks and the cam block or read programmed data, and a processor configured to control the peripheral circuit unit to measure an offset voltage by memory cell group in the plurality of memory blocks to set a read voltage during a test read operation and control the peripheral circuit unit to perform a read operation by memory cell group by using a new read voltage during a read operation.
    Type: Application
    Filed: August 31, 2012
    Publication date: June 20, 2013
    Applicant: SK hynix Inc.
    Inventor: Hea Jong YANG
  • Publication number: 20130020554
    Abstract: There is provided a semiconductor light emitting device and a light emitting apparatus. The semiconductor light emitting device includes a light emitting diode (LED) part disposed on one region of a light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and a Zener diode part disposed on the other region of the light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer.
    Type: Application
    Filed: July 20, 2012
    Publication date: January 24, 2013
    Inventors: Jong In YANG, Tae Hyung Kim, Young Chul Shin, Tae Hyun Lee, Sang Yeob Song, Tae Hun Kim
  • Publication number: 20130020598
    Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.
    Type: Application
    Filed: July 20, 2012
    Publication date: January 24, 2013
    Inventors: Jong In Yang, Sung Tae Kim, Yong Il Kim, Su Yeol Lee, Seung Wan Chae, Hyung Duk Ko, Yung Ho Ryu
  • Publication number: 20130016990
    Abstract: A power supply apparatus, an apparatus, and a method of supplying power are provided. The power supply apparatus including a high voltage generating unit, which generates one or more output voltages by using an input voltage, and which is implemented as a chip. The one or more output terminals are on a same circuit board as the high voltage generating unit, to output the generated one or more output voltages. The chip includes a transforming unit to transform the input voltage into one or more transformed voltages that are different from one another, and a rectifying unit to rectify the transformed voltages into rectified voltages, and to determine the rectified voltages as the generated one or more output voltages.
    Type: Application
    Filed: July 9, 2012
    Publication date: January 17, 2013
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jong-Hwa Cho, Joong-gi Kwon, Jong-yang Choo, Chul-woo Oh
  • Patent number: 8350407
    Abstract: A high voltage power supply apparatus comprising a first circuit disposed on a prepared substrate, and for receiving a first voltage and generating a second voltage that is previously set according to the first voltage, and a second circuit for amplifying and rectifying the second voltage to generate a plurality of high voltage signals, wherein the first circuit and the second circuit are embodied as a single module, wherein at least a portion of the single module is surrounded by an insulator.
    Type: Grant
    Filed: January 15, 2010
    Date of Patent: January 8, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-hwa Cho, Joong-gi Kwon, Jong-yang Choo, Chul-woo Oh
  • Patent number: 8352000
    Abstract: A dual connection member allowing a liquid crystal display unit and a keypad of a mobile phone to rotate and a hinge device thereof are provided. The dual connection member may be used in a mobile phone wherein the mobile phone includes a first housing, a second housing and a dual connection member for interconnecting the first housing and the second housing in such a manner that the second housing is rotatable about a first hinge axis toward or away from the first housing, wherein the first and second housings are connected to the dual connection member in such a manner as to be rotatable about third and second hinge axes, respectively, which extend perpendicular to the front and rear faces of the first and second housings, respectively, the third and second hinge axes being eccentrically positioned in relation to the centers of the first and second housings, respectively, and allowed to be slid as the first and second housings are rotated.
    Type: Grant
    Filed: August 21, 2007
    Date of Patent: January 8, 2013
    Assignees: Samsung Electronics Co., Ltd., JMC Co., Ltd.
    Inventors: Jong-Yang Kim, Yoo-Seok Yoon, Soo-Ik Jung, Seung-Hee Hyun, Kyeong-Won Lim
  • Patent number: 8334156
    Abstract: A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 ?m. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.
    Type: Grant
    Filed: December 29, 2009
    Date of Patent: December 18, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Cheol Kyu Kim, Yung Ho Ryu, Soo Min Lee, Jong In Yang, Tae Hyung Kim
  • Publication number: 20120307567
    Abstract: A method of operating a non-volatile memory device includes erasing a memory cell block, supplying a first drain turn-on voltage higher than a target level to the drain select line of the memory cell block, and performing a soft program operation by supplying a soft program voltage to the word lines of the memory cell block.
    Type: Application
    Filed: May 30, 2012
    Publication date: December 6, 2012
    Inventors: Se Jun KIM, Hea Jong Yang
  • Patent number: 8315556
    Abstract: An apparatus for use in a relay wireless communication system is capable of bidirectional relaying with precoding. A Base Station (BS) includes a plurality of antennas. The BS can receive a relay signal that includes a transmit symbol vector of the BS and a transmit symbol vector of a Mobile Station (MS) from a Relay Station. The BS determines power difference values corresponding to all of symbol vectors available as the transmit symbol vector of the MS. The BS further determines the transmit symbol vector of the MS or per bit Log Likelihood Ratios using the power difference values.
    Type: Grant
    Filed: March 26, 2010
    Date of Patent: November 20, 2012
    Assignees: Samsung Electronics Co., Ltd., Korea Advance Institute of Science and Technology
    Inventors: Tak-Ki Yu, Eun-Seok Ko, Yu-Seok Kim, Joo-Hwan Chun, Hyun-Jong Yang
  • Patent number: 8274176
    Abstract: In a provided power supply unit, a plurality of circuit elements are integrated into a chip, wherein the circuit elements generate one or more output voltages by using an input voltage. Thus, although the number of voltages, which can be generated by the power supply apparatus, is remarkably large, the power supply apparatus can be miniaturized. In addition, an apparatus, in which the power supply apparatus is installed, can be miniaturized.
    Type: Grant
    Filed: December 21, 2007
    Date of Patent: September 25, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-hwa Cho, Joong-gi Kwon, Jong-yang Choo, Chul-woo Oh
  • Patent number: 8251182
    Abstract: An automatic lubricant dispenser is detachably mounted on a bearing of a machine to continuously supply lubricant to the bearing. The dispenser includes a housing for storing the lubricant inside, a piston upwardly compressing the lubricant inside the housing, a spring installed at a bottom of the piston, for compressing and elastically supporting the piston, and a flow pipe installed vertically by extending through both the housing and the piston. The flow pipe is formed with an inflow hole on a top portion thereof and an inside hollow channel so that the lubricant compressed by the piston flows into the flow pipe and is then discharged into a bottom of the housing. An operator can voluntarily control the accurate flow amount of the fluent lubricant.
    Type: Grant
    Filed: October 1, 2008
    Date of Patent: August 28, 2012
    Assignee: KLT Co., Ltd.
    Inventor: Yun Jong Yang
  • Publication number: 20120198706
    Abstract: The present invention relates to a bearing unit for protecting the blade of a grass mower and preventing a cover plate from being damaged due to a driving force of a driving motor, and a protection cover for a grass mower using the same.
    Type: Application
    Filed: October 26, 2010
    Publication date: August 9, 2012
    Inventor: An Jong Yang
  • Publication number: 20120146516
    Abstract: A method of manufacturing a power supply unit (PSU) is provided. The method includes providing at least one PSU supplying a dimming signal to at least one light source, performing a first test for electrical characteristics of the at least one PSU, detecting light emitted from the at least one light source, measuring a flicker of the at least one light source, and performing a second test for a state of the at least one PSU based on a flicker measurement result, and packing a PSU determined to be in a normal state among the at least one PSU, as a result of the first test and the second test.
    Type: Application
    Filed: December 9, 2011
    Publication date: June 14, 2012
    Inventors: Jin Sung Kim, Kyu Cheol Kang, Jin Woo Bae, Choul Ho Lee, Jong Yang Choo
  • Publication number: 20120146622
    Abstract: A test apparatus for a power supply unit is provided, which includes a body unit configured to define a space to receive a light emitting diode (LED) and to provide a test environment to test a supply state of power applied to the LED; and a test unit mounted in the body unit to face the LED and configured to detect flicker of the LED occurring when a power supply is abnormal. According to the foregoing structure, power supply with respect to the LED may be regularly detected and analyzed, thereby increasing quality of power supply with respect to the LED.
    Type: Application
    Filed: December 9, 2011
    Publication date: June 14, 2012
    Inventors: Jin Sung KIM, Kyu Cheol KANG, Jin Woo BAE, Choul Ho LEE, Jong Yang CHOO
  • Publication number: 20120119249
    Abstract: An LED and manufacturing method therefor. The LED comprises a compound semiconductor structure having first and second compound layers and active layer, first and second electrode layers atop the second compound semiconductor layer and connected to the two compound. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer on the other side surface is connected to the second electrode layer.
    Type: Application
    Filed: October 5, 2011
    Publication date: May 17, 2012
    Inventors: Tae-hyung KIM, Cheol-soo SONE, Jong-in YANG, Sang-yeob SONG, Si-hyuk LEE
  • Publication number: 20120086016
    Abstract: There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
    Type: Application
    Filed: December 12, 2011
    Publication date: April 12, 2012
    Applicant: Samsung LED Co., Ltd.
    Inventors: Jong In YANG, Sang Bum Lee, Sang Yeob Song, Si Hyuk Lee, Tae Hyung Kim
  • Patent number: 8126033
    Abstract: An apparatus and method for supporting relaying in a wireless communication system are provided. The apparatus and method include a transmitting apparatus which acquires channel information between the transmitting apparatus and an RS, pre-encodes a transmission signal to be transmitted to the RS with the channel information, transmits the pre-coded signal to the RS, and acquires, upon receipt of a signal from the RS, a signal transmitted by a receiving apparatus by eliminating the transmission signal transmitted to the RS from the received signal. Accordingly, the apparatus and method improve system capacity gain without adding time resources.
    Type: Grant
    Filed: November 28, 2007
    Date of Patent: February 28, 2012
    Assignees: Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Young-Ho Jung, Yu-Seok Kim, Hyun-Jong Yang, Kyung-Chun Lee, Joo-Hwan Chun
  • Patent number: 8110424
    Abstract: There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
    Type: Grant
    Filed: April 7, 2009
    Date of Patent: February 7, 2012
    Assignee: Samsung LED Co., Ltd.
    Inventors: Jong In Yang, Sang Bum Lee, Sang Yeob Song, Si Hyuk Lee, Tae Hyung Kim
  • Patent number: 8110417
    Abstract: There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.
    Type: Grant
    Filed: September 20, 2010
    Date of Patent: February 7, 2012
    Assignee: Samsung LED Co., Ltd.
    Inventors: Jong In Yang, Yu Seung Kim, Sang Yeob Song, Si Hyuk Lee, Tae Hyung Kim
  • Publication number: 20120007120
    Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate.
    Type: Application
    Filed: July 12, 2011
    Publication date: January 12, 2012
    Inventors: Hak Hwan KIM, Ho Sun Paek, Hyung Kun Kim, Sung Kyong Oh, Jong In Yang