Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate.

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Abstract: A method of erasing a semiconductor memory device comprises grouping a plurality of word lines of each memory block into at least two groups based on intensity of disturbance between neighboring word lines; performing an erase operation by applying a ground voltage to all word lines of a selected memory block and by applying an erase voltage to a well of the selected memory block; and first increasing the ground voltage of one group of the groups to a positive voltage during the erase operation.

Abstract: Provided is an image forming apparatus and a method of controlling the same. When an external power is supplied to a heating resistance member of a fusing unit in the image forming apparatus that is in a standby mode, a power supply unit supplies an internal power to a different load (for example, an exposure unit, a developing unit, or a transfer unit) in one or more time sections so as to supply the internal power to the load at a continuously changing operating frequency.

Abstract: Provided is a network management system including a management message storage for registering a key of a management message for network management and a value of the key according to a map configuration; a network management message processing unit for transmitting the management message including the key mapped to the key value of the management message storage for the network management, and a network element receives a management message from the network management processing unit, it extracts a key value corresponding to a key included in the management message from the management message storage, accesses an information value based on the key value from a Management Information Base (MIB), and transmits the information value to the network management processing unit According to the provided network management system, it is not only possible to support a variety of network management protocols, but an existing message configuration is unaffected even when a new protocol is supported.

Abstract: There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

Abstract: A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 ?m. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.

Abstract: Provided is a method of manufacturing a vertical LED, the method including the steps of: preparing a sapphire substrate; forming a light emitting structure in which an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer are sequentially laminated on the sapphire substrate; forming a p-electrode on the p-type nitride semiconductor layer; forming a structure support layer on the p-electrode; removing the sapphire substrate through an LLO (laser lift-off) process; isolating the light emitting structure into unit LED elements through an ISO (isolation) process; and forming an n-electrode on each of the n-type nitride semiconductor layers of the isolated light emitting structures.

Abstract: A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based semiconductor device. The method for manufacturing the nitride based single crystal substrate includes forming a nitride based single crystal layer on a preliminary substrate; forming a polymer support layer by applying a setting adhesive material having flowability on the upper surface of the nitride based single crystal layer and hardening the applied adhesive material; and separating the nitride based single crystal layer from the preliminary substrate by irradiating a laser beam onto the lower surface of the preliminary substrate. The method for manufacturing the nitride based single crystal substrate is applied to the manufacture of a nitride based semiconductor device having a vertical structure.

Abstract: There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

Abstract: An apparatus for use in a relay wireless communication system is capable of bidirectional relaying with precoding. A Base Station (BS) includes a plurality of antennas. The BS can receive a relay signal that includes a transmit symbol vector of the BS and a transmit symbol vector of a Mobile Station (MS) from a Relay Station. The BS determines power difference values corresponding to all of symbol vectors available as the transmit symbol vector of the MS. The BS further determines the transmit symbol vector of the MS or per bit Log Likelihood Ratios using the power difference values.

Abstract: A high voltage power supply apparatus comprising a first circuit disposed on a prepared substrate, and for receiving a first voltage and generating a second voltage that is previously set according to the first voltage, and a second circuit for amplifying and rectifying the second voltage to generate a plurality of high voltage signals, wherein the first circuit and the second circuit are embodied as a single module, wherein at least a portion of the single module is surrounded by an insulator.

Abstract: A sliding device for a portable terminal includes a sliding module capable of sliding a sliding housing in multiple steps. The portable terminal has a body housing, a sliding housing that slides on the body housing while facing the body housing, and a sliding device for enabling the sliding housing to slide on the body housing. The sliding device includes a base member provided with a sliding movement member, a sliding member assembled with the base member so as to slide along a length of the base member semi-automatically, a pair of guide members provided to the sliding member and assembled with the sliding movement member so as to guide the sliding movement of the sliding movement member, and a multiple step movement member formed on the guide members and detachably assembled with the sliding movement member for sliding the sliding member in multiple steps.

Abstract: An apparatus and a method for a product-line description and verification is provided. The apparatus includes: a product-line architecture model conversion tool for classifying related architecture model components according to variant characteristics by analyzing inputted scenarios, generating a dependency relationship model by extracting a dependency relationship between architecture model elements based on a variant element, and generating a product-line architecture from an inputted architecture model based on the dependency relationship model; and a product-line architecture verification tool for receiving a scenario of a system requirement, mapping the scenario to related architecture model components, analyzing an architecture model dependency by analyzing static modeling information and dynamic modeling information of a product architecture, and generating an aspect model of the requirements, the scenario and the related architecture model components.

Abstract: A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 ?m. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.

Abstract: There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

Abstract: Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer.

Abstract: There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.

Abstract: Provided is an image forming apparatus and a method of controlling the same. When an external power is supplied to a heating resistance member of a fusing unit in the image forming apparatus that is in a standby mode, a power supply unit supplies an internal power to a different load (for example, an exposure unit, a developing unit, or a transfer unit) in one or more time sections so as to supply the internal power to the load at a continuously changing operating frequency.

Abstract: A driving apparatus enables a sliding-type portable wireless terminal to be opened or closed with reduced noise and through multiple stages of opening. The portable wireless terminal may have various functions corresponding to each of the multiple stages. The driving apparatus comprises: a main body; a sub body sliding in a longitudinal direction of the main body, so as to be opened from or closed onto the main body; a first magnetic module provided at a rear surface of the sub body and having a first magnet, the first magnet having a first polarity and extending in a longitudinal direction of the first magnet; and a second magnetic module provided at a front surface of the main body and having a second magnet, the second magnet having a second polarity and being opposed to the first magnet.