Patents by Inventor Jong Seob Kim

Jong Seob Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polymer having antireflective properties and high carbon content, hardmask composition including the same, and process for forming a patterned material layer
    Patent number: 8263321
    Abstract: An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C as set forth in the specification.
    Type: Grant
    Filed: December 29, 2010
    Date of Patent: September 11, 2012
    Assignee: Cheil Industries, Inc.
    Inventors: Kyong Ho Yoon, Jong Seob Kim, Dong Seon Uh, Chang Il Oh, Kyung Hee Hyung, Min Soo Kim, Jin Kuk Lee
  • Method of manufacturing high electron mobility transistor
    Patent number: 8263449
    Abstract: A method of manufacturing a High Electron Mobility Transistor (HEMT) may include forming first and second material layers having different lattice constants on a substrate, forming a source, a drain, and a gate on the second material layer, and changing the second material layer between the gate and the drain into a different material layer, or changing a thickness of the second material layer, or forming a p-type semiconductor layer on the second material layer. The change in the second material layer may occur in an entire region of the second material layer between the gate and the drain, or only in a partial region of the second material layer adjacent to the gate. The p-type semiconductor layer may be formed on an entire top surface of the second material layer between the gate and the drain, or only on a partial region of the top surface adjacent to the gate.
    Type: Grant
    Filed: January 31, 2011
    Date of Patent: September 11, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-ha Hong, U-In Chung, Jai-kwang Shin, Jae-joon Oh, Jong-seob Kim, Hyuk-soon Choi, In-jun Hwang
  • Electrolyte for lithium secondary battery and lithium secondary battery comprising same
    Patent number: 8252465
    Abstract: Disclosed is an electrolyte for a lithium secondary battery. The electrolyte includes a non-aqueous solvent and a sulfone based organic compound represented by the following Formulae (I), (II), or (III), or a mixture thereof: where R and R? are independently selected from the group consisting of primary alkyl groups, secondary alkyl groups, tertiary alkyl groups, alkenyl groups, aryl groups; halogen substituted primary alkyl groups, halogen substituted secondary alkyl groups, halogen substituted tertiary alkyl groups, halogen substituted alkenyl groups, and halogen substituted aryl groups, and n is from 0 to 3.
    Type: Grant
    Filed: November 18, 2003
    Date of Patent: August 28, 2012
    Assignees: Samsung SDI Co., Ltd., Ukseung Chemical Co., Ltd.
    Inventors: Jin-Sung Kim, Jong-Wook Lee, Kwang-Sik Kim, Young-Gyu Kim, Je-Yun Kim, Jong-Seob Kim, Meen-Seon Paik, Hak-Soo Kim
  • E-Mode High Electron Mobility Transistors And Methods Of Manufacturing The Same
    Publication number: 20120112202
    Abstract: An Enhancement-mode (E-mode) high electron mobility transistor (HEMT) includes a channel layer with a 2-Dimensional Electron Gas (2DEG), a barrier layer inducing the 2DEG in the channel layer, source and drain electrodes on the barrier layer, a depletion layer on the barrier layer between the source and drain electrodes, and a gate electrode on the depletion layer. The barrier layer is recessed below the gate electrode and the depletion layer covers a surface of the recess and extends onto the barrier layer around the recess.
    Type: Application
    Filed: July 11, 2011
    Publication date: May 10, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: In-jun Hwang, Ki-ha Hong, Jong-seob Kim, Jae-Kwang Shin, Jae-joon Oh, Jong-bong Ha, Hyuk-soon Choi
  • E-Mode High Electron Mobility Transistor And Method Of Manufacturing The Same
    Publication number: 20120086049
    Abstract: According to an example embodiment, a high electron mobility transistor (HEMT) includes a substrate, a buffer layer on the substrate, a channel layer on the buffer layer, and a barrier structure on the channel layer. The buffer layer includes a 2-dimensional electron gas (2DEG). A polarization of the barrier structure varies in a region corresponding to a gate electrode. The HEMT further includes and the gate electrode, a source electrode, and a drain electrode on the barrier structure.
    Type: Application
    Filed: August 31, 2011
    Publication date: April 12, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: In-jun Hwang, Jong-seob Kim, Hyuk-soon Choi, Ki-ha Hong, Jai-kwang Shin, Jae-joon Oh
  • Methods Of Manufacturing High Electron Mobility Transistors
    Publication number: 20120088341
    Abstract: The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.
    Type: Application
    Filed: July 8, 2011
    Publication date: April 12, 2012
    Applicants: Kyungpook National University Industry-Academic Cooperation Foundation, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyuk-soon Choi, Jung-hee Lee, Jai-kwang Shin, Jae-joon Oh, Jong-bong Ha, Jong-seob Kim, In-jun Hwang, Ki-ha Hong, Ki-sik Im, Ki-won Kim, Dong-seok Kim
  • Polymer composition, hardmask composition having antireflective properties, and associated methods
    Patent number: 8153349
    Abstract: A polymer composition includes an aromatic ring-containing polymer represented by Formula 1: wherein m and n satisfy the relations 1?m<190, 0?n<190, and 1?m+n<190.
    Type: Grant
    Filed: December 23, 2008
    Date of Patent: April 10, 2012
    Assignee: Cheil Industries, Inc.
    Inventors: Hwan Sung Cheon, Jong Seob Kim, Kyong Ho Yoon, Min Soo Kim, Jin Kuk Lee, Jee Yun Song
  • POWER ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20120037958
    Abstract: According to an example embodiment, a power electronic device includes a first semiconductor layer, a second semiconductor layer on a first surface of the first semiconductor layer, and a source, a drain, and a gate on the second semiconductor layer. The source, drain and gate are separate from one another. The power electronic device further includes a 2-dimensional electron gas (2DEG) region at an interface between the first semiconductor layer and the second semiconductor layer, a first insulating layer on the gate and a second insulating layer adjacent to the first insulating layer. The first insulating layer has a first dielectric constant and the second insulating layer has a second dielectric constant less than the first dielectric constant.
    Type: Application
    Filed: August 12, 2011
    Publication date: February 16, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: In-jun Hwang, Jai-kwang Shin, Jae-joon Oh, Jong-seob Kim, Hyuk-soon Choi, Ki-ha Hong
  • High Electron Mobility Transistors And Methods Of Fabricating The Same
    Publication number: 20110303952
    Abstract: A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the drain electrode are located on the channel supplying layer. A channel increase layer is between the channel supplying layer and the source and drain electrodes. A thickness of the channel supplying layer is less than about 15 nm.
    Type: Application
    Filed: June 2, 2011
    Publication date: December 15, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: In-jun Hwang, Jai-kwang Shin, Jae-joon Oh, Jong-seob Kim, Hyuk-soon Choi, Ki-ha Hong
  • Filler for filling a gap and method for manufacturing semiconductor capacitor using the same
    Patent number: 8058711
    Abstract: A filler for filling a gap includes a hydrogenated polysiloxazane having an oxygen content of about 0.2 to about 3 wt %. A chemical structure of the hydrogenated polysiloxazane includes first, second, and third moieties represented by the following respective Chemical Formulas 1-3: The third moiety is on a terminal end of the hydrogenated polysiloxazane, and an amount of the third moiety is about 15 to about 35% based on a total amount of Si—H bonds in the hydrogenated polysiloxazane.
    Type: Grant
    Filed: November 30, 2010
    Date of Patent: November 15, 2011
    Assignee: Cheil Industries, Inc.
    Inventors: Sang-Hak Lim, Hui-Chan Yun, Dong-Il Han, Taek-Soo Kwak, Jin-Hee Bae, Jung-Kang Oh, Sang-Kyun Kim, Jong-Seob Kim
  • HARDMASK COMPOSITION HAVING ANTIREFLECTIVE PROPERTIES AND METHOD OF PATTERNING MATERIAL ON SUBSTRATE USING THE SAME
    Publication number: 20110275019
    Abstract: A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3:
    Type: Application
    Filed: July 14, 2011
    Publication date: November 10, 2011
    Applicant: CHEIL INDUSTRIES, INC.
    Inventors: Kyong Ho YOON, Jong Seob Kim, Dong Seon Uh, Hwan Sung Cheon, Chang Il Oh, Min Soo Kim, Jin Kuk Lee
  • Driving circuits, power devices and electronic devices including the same
    Publication number: 20110273221
    Abstract: A power device includes a switching device having a control terminal and an output terminal; and a driving circuit configured to provide a driving voltage to the control terminal such that a voltage between the control terminal and the output terminal remains less than or equal to a critical voltage. A rise time required for the driving voltage to reach a target level is determined according to current-voltage characteristics of the switching device. And, when the voltage between the control terminal and the output terminal exceeds the critical voltage, leakage current is generated between the control terminal and the output terminal.
    Type: Application
    Filed: March 15, 2011
    Publication date: November 10, 2011
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ho-jung Kim, Jae-kwang Shin, Jae-Joon Oh, Jong-seob Kim, Hyuk-soon Choi, In-jun Hwang, Ki-ha Hong
  • High Electron Mobility Transistors Including Lightly Doped Drain Regions And Methods Of Manufacturing The Same
    Publication number: 20110272743
    Abstract: High electron mobility transistors (HEMTs) including lightly doped drain (LDD) regions and methods of manufacturing the same. A HEMT includes a source, a drain, a gate, a channel supplying layer for forming at least a 2-dimensional electron gas (2DEG) channel, and a channel formation layer in which at least the 2DEG channel is formed. The channel supplying layer includes a plurality of semiconductor layers having different polarizabilities. A portion of the channel supplying layer is recessed. One of the plurality of semiconductor layers, which is positioned below an uppermost layer is an etching buffer layer, as well as a channel supplying layer.
    Type: Application
    Filed: April 28, 2011
    Publication date: November 10, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: In-jun Hwang, Jai-kwang Shin, Jae-joon Oh, Jong-seob Kim, Hyuk-soon Choi, Ki-ha Hong
  • HARDMASK COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    Publication number: 20110241175
    Abstract: A hardmask composition for forming a resist underlayer film, a process for producing a semiconductor integrated circuit device, and a semiconductor integrated circuit device, the hardmask composition including an organosilane polymer, and a stabilizer, the stabilizer including one of acetic anhydride, methyl acetoacetate, propionic anhydride, ethyl-2-ethylacetoacetate, butyric anhydride, ethyl-2-ethylacetoacetate, valeric anhydride, 2-methylbutyric anhydride, nonanol, decanol, undecanol, dodecanol, propylene glycol propyl ether, propylene glycol ethyl ether, propylene glycol methyl ether, propylene glycol, phenyltrimethoxysilane, diphenylhexamethoxydisiloxane, diphenylhexaethoxydisiloxane, dioctyltetramethyldisiloxane, hexamethyltrisiloxane, tetramethyldisiloxane, decamethyltetrasiloxane, dodecamethylpentasiloxane, hexamethyldisiloxane, and mixtures thereof.
    Type: Application
    Filed: June 15, 2011
    Publication date: October 6, 2011
    Inventors: Sang Ran KOH, Sang Kyun KIM, Sang Hak LIM, Mi Young KIM, Hui Chan YUN, Do Hyeon KIM, Dong Seon UH, Jong Seob KIM
  • Semiconductor device
    Publication number: 20110221482
    Abstract: Provided is a semiconductor device that may include a switching device having a negative threshold voltage, and a driving unit between a power terminal and a ground terminal and providing a driving voltage for driving the switching device. The switching device may be connected to a virtual ground node having a virtual ground voltage that is greater than a ground voltage supplied from the ground terminal and may be turned on when a difference between the driving voltage and the virtual ground voltage is greater than the negative threshold voltage.
    Type: Application
    Filed: October 12, 2010
    Publication date: September 15, 2011
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ho-jung Kim, Jong-seob Kim, Jai-Kwang Shin, Jae-joon Oh, Ki-ha Hong, In-jun Hwang, Hyuk-soon Choi
  • Method of operating nonvolatile memory device
    Patent number: 8018781
    Abstract: Provided is a method of operating a nonvolatile memory device to perform an erase operation. The method includes applying a composite pulse including a direct current (DC) pulse and a DC perturbation pulse to the nonvolatile memory device to perform the erase operation.
    Type: Grant
    Filed: February 28, 2008
    Date of Patent: September 13, 2011
    Assignee: Samsung Electronics, Co., Ltd.
    Inventors: Kwang-soo Seol, Sang-jin Park, Sung-hoon Lee, Sung-il Park, Jong-seob Kim, Jung-dal Choi, Ki-hwan Choi, Jae-sung Sim, Seung-hyun Moon
  • High electron mobility transistors exhibiting dual depletion and methods of manufacturing the same
    Publication number: 20110215378
    Abstract: High electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same. The HEMT includes a source electrode, a gate electrode and a drain electrode disposed on a plurality of semiconductor layers having different polarities. A dual depletion region exists between the source electrode and the drain electrode. The plurality of semiconductor layers includes an upper material layer, an intermediate material layer and a lower material layer, and a polarity of the intermediate material layer is different from polarities of the upper material layer and the lower material layer.
    Type: Application
    Filed: January 28, 2011
    Publication date: September 8, 2011
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: In-Jun Hwang, Jong-Seob Kim, Hyuk-Soon Choi, Ki-Ha Hong, Jai-Kwang Shin, Jae-Joon Oh
  • Chemical sensor using thin-film sensing member
    Publication number: 20110210751
    Abstract: Provided is a chemical sensor that may include a first electrode on a substrate, a sensing member covering the first electrode on the substrate, and a plurality of second electrodes on a surface of the sensing member exposing the surface of the sensing member. The chemical sensor may be configured to measure the change in electrical characteristics when a compound to be sensed is adsorbed on the sensing member. Provided also is a chemical sensor array including an array of chemical sensors.
    Type: Application
    Filed: May 2, 2011
    Publication date: September 1, 2011
    Inventors: Ki-ha Hong, Hyuk-soon Choi, Jong-seob Kim, Jai-kwang Shin
  • Method Of Manufacturing High Electron Mobility Transistor
    Publication number: 20110212582
    Abstract: A method of manufacturing a High Electron Mobility Transistor (HEMT) may include forming first and second material layers having different lattice constants on a substrate, forming a source, a drain, and a gate on the second material layer, and changing the second material layer between the gate and the drain into a different material layer, or changing a thickness of the second material layer, or forming a p-type semiconductor layer on the second material layer. The change in the second material layer may occur in an entire region of the second material layer between the gate and the drain, or only in a partial region of the second material layer adjacent to the gate. The p-type semiconductor layer may be formed on an entire top surface of the second material layer between the gate and the drain, or only on a partial region of the top surface adjacent to the gate.
    Type: Application
    Filed: January 31, 2011
    Publication date: September 1, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ki-ha Hong, U-in Chung, Jai-kwang Shin, Jae-joon Oh, Jong-seob Kim, Hyuk-soon Choi, In-jun Hwang
  • Nonvolatile memory device and method of operating and fabricating the same
    Patent number: 8004906
    Abstract: Provided is a method of reliably operating a highly integratable nonvolatile memory device. The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line. In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.
    Type: Grant
    Filed: August 3, 2010
    Date of Patent: August 23, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-ha Hong, Sung-hoon Lee, Jae-woong Hyun, Jai-kwang Shin, Young-gu Jin, Sung-il Park, Jong-seob Kim