Abstract: An antireflective hardmask composition includes an organic solvent, and at least one polymer represented by Formulae A, B or C: In Formulae A and B, the fluorene group is unsubstituted or substituted, in Formula C, the naphthalene group is unsubstituted or substituted, n is at least 1 and is less than about 750, m is at least 1, and m+n is less than about 750, G is an aromatic ring-containing group having an alkoxy group, and R1 is methylene or includes a non-fluorene-containing aryl linking group.

Abstract: Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer component including at least one polymer having a monomeric unit of Formula (I) wherein R1 and R2 may each independently be hydrogen, hydroxyl, alkyl, aryl, allyl, halo, or any combination thereof; R3 and R4 may each independently be hydrogen, a crosslinking functionality, a chromophore, or any combination thereof; R5 and R6 may each independently be hydrogen or an alkoxysilane group; R7 may each independently be hydrogen, alkyl, aryl, allyl, or any combination thereof; and n may be a positive integer; (b) a crosslinking component; and (c) an acid catalyst.

Abstract: A hardmask composition includes a solvent and an organosilicon copolymer. The organosilicon copolymer may be represented by Formula A: (SiO1.5—Y—SiO1.5)x(R3SiO1.5)y ??(A) wherein x and y may satisfy the following relations: x is about 0.05 to about 0.9, y is about 0.05 to about 0.9, and x+y=1, R3 may be a C1-C12 alkyl group, and Y may be a linking group including a substituted or unsubstituted, linear or branched C1-C20 alkyl group, a C1-C20 group containing a chain that includes an aromatic ring, a heterocyclic ring, a urea group or an isocyanurate group, or a C2-C20 group containing one or more multiple bonds.

Abstract: A nanowire device having a structure allowing for formation of p-type and n-type doped portions in a nanowire, and a method of fabricating the same. The nanowire device includes a substrate, a first electrode layer formed on the substrate, a second electrode layer facing the first electrode layer, a plurality of nanowires interposed at a predetermined interval between the first electrode layer and the second electrode layer to connect the same, and an electrolyte containing an electrolytic salt filling spaces between the nanowires.

Abstract: A spiro-based compound containing cyclopentaphenanthrene and fluorene, which is used for an organoelectroluminescent device and an organoelectroluminescent device having the spiro-based compound. The spiro-based compound containing cyclopentaphenanthrene and fluorene can be easily manufactured to have high solubility, high color purity, and good thermal stability. The spiro-based compound containing cyclopentaphenanthrene and fluorene is suitable as a substance for an organic film, in particular, an emission layer of an organoelectroluminescent device. Further, the spiro-based compound containing cyclopentaphenanthrene and fluorene can be used as an organic dye, or an electron material such as a non-linear optical material.

Abstract: A nonaqueous electrolyte for a battery having explosion inhibiting properties includes an organic solvent and a lithium salt. A benzene-substituted phosphate derivative is provided at a level in a range from about 0.1% to about 10% by weight. The benzene-substituted phosphate derivative can be expressed by the following formula: wherein R represents a halogen-substituted C1-C8 alkyl or allyl compound or an unsubstituted C1-C8 alkyl or allyl compound, and n is an integer between 1 and 3.

Abstract: Provided are a liquid crystal compound represented by formula 1, a liquid crystal composition including the same, and a liquid crystal display including the liquid crystal composition: wherein X1, X2, R1, R2, L and are the same as described in specification. High optical anisotropy and negative dielectric anisotropy can be achieved by the use of the liquid crystal composition including the liquid crystal compound.

Abstract: A p-type doped nanowire and a method of fabricating the same. The nanowire has a p-type doped portion which is formed by chemically binding a radical having a half-occupied outermost orbital shell to the corresponding portion of the nanowire, which corresponding portion of the nanowire donates an electron to the radical to thereby form the p-type doped portion.

Abstract: A vertical alignment liquid crystalline compound containing a laterally substituted aromatic cyclic moiety. The liquid crystalline compound has a wide temperature range of the nematic phase, a high optical anisotropy and a high negative dielectric anisotropy. In addition, since the rotation viscosity and the K33/K11 ratio of the liquid crystalline compound are maintained at a low level, the liquid crystalline compound can be effectively used as a liquid crystalline medium having good image quality and a high response speed even when applied to thin liquid crystalline cells.

Abstract: Provided herein are hardmask compositions that include an organosilane polymer prepared by the reaction of one or more compounds of Formula (I) Si(OR1)(OR2)(OR3)R4 wherein R1, R2 and R3 may each independently be alkyl acetoxy or oxime; and R4 may be hydrogen, alkyl, aryl or arylalkyl; and wherein the organosilane polymer has a polydispersity in a range of about 1.1 to about 2.

Abstract: Provided herein, according to some embodiments of the invention, are organosilane polymers prepared by reacting organosilane compounds including (a) at least one compound of Formula I Si(OR1)(OR2)(OR3)R4 ??(I) wherein R1, R2 and R3 may each independently be an alkyl group, and R4 may be —(CH2)nR5, wherein R5 may be an aryl or a substituted aryl, and n may be 0 or a positive integer; and (b) at least one compound of Formula II Si(OR6)(OR7)(OR8)R9 ??(II) wherein R6, R7 and R8 may each independently an alkyl group or an aryl group; and R9 may be an alkyl group. Also provided are hardmask compositions including an organosilane compound according to an embodiment of the invention, or a hydrolysis product thereof. Methods of producing semiconductor devices using a hardmask compostion according to an embodiment of the invention, and semiconductor devices produced therefrom, are also provided.

Abstract: A non-aqueous electrolyte for a lithium secondary battery is provided. The electrolyte comprises a lithium salt, a non-aqueous solvent, and an organic compound selected from the group consisting of compounds represented by Formulae (1) to (6): wherein R1 to R12 are each independently selected from the group consisting of primary, secondary, and tertiary alkyl groups, alkenyl groups, and aryl groups; X is hydrogen or halogen; and n and m are numerical values ranging from 0 to 3.

Abstract: A non-aqueous electrolyte for a lithium secondary battery is provided. The electrolyte comprises a lithium salt, a non-aqueous solvent, and an organic compound selected from the group consisting of compounds represented by Formulae (1) to (6): wherein R1 to R12 are each independently selected from the group consisting of primary, secondary, and tertiary alkyl groups, alkenyl groups, and aryl groups; X is hydrogen or halogen; and n and m are numerical values ranging from 0 to 3.

Abstract: Provided herein are hardmask compositions for resist underlayer films, wherein according to some embodiments of the invention, hardmask compositions include a polymer prepared by the reaction of a compound of Formula 1 with a compound of Formula 2 (R)m—Si—(OCH3)4-m ??(2) in the presence of a catalyst, wherein R is a monovalent organic group, n is an integer from 3 to 20, and m is 1 or 2; and an organic solvent. Also provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the invention. Further provided are semiconductor integrated circuit devices produced by a method embodiment of the invention.

Abstract: Provided herein are hardmask compositions for resist underlayer films, wherein in some embodiments, the hardmask compositions include (a) a first polymer prepared by the reaction of a compound of Formula 1 wherein n is a number of 3 to 20, with a compound of Formula 2 (R)m—Si—(OCH3)4-m ??(2) wherein R is a monovalent organic group and m is 0, 1 or 2; (b) a second polymer that includes at least one of the structures represented by Formulae 3-6; (c) an acid or base catalyst; and (d) an organic solvent. Further provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the present invention. In addition, provided herein are semiconductor integrated circiut devices produced by a method embodiment of the invention.

Abstract: A nanowire device having a structure allowing for formation of p-type and n-type doped portions in a nanowire, and a method of fabricating the same. The nanowire device includes a substrate, a first electrode layer formed on the substrate, a second electrode layer facing the first electrode layer, a plurality of nanowires interposed at a predetermined interval between the first electrode layer and the second electrode layer to connect the same, and an electrolyte containing an electrolytic salt filling spaces between the nanowires.

Abstract: Disclosed is a lithium secondary battery comprising a positive electrode including a material that is capable of reversible intercalation/deintercalation of lithium ions as a positive active material; a negative electrode including a material that is capable of reversible intercalation/deintercalation of lithium ions as a negative active material; and an electrolyte including a lithium salt, a carbonate-based organic solvent, and an isoxazole compound of the following formula (1):

Abstract: A non-aqueous electrolyte for a lithium secondary battery is provided. The electrolyte comprises a lithium salt, a non-aqueous solvent, and an organic compound selected from the group consisting of compounds represented by Formulae (1) to (6): wherein R1 to R12 are each independently selected from the group consisting of primary, secondary, and tertiary alkyl groups, alkenyl groups, and aryl groups; X is hydrogen or halogen; and n and m are numerical values ranging from 0 to 3.

Abstract: A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type doped portion and a p-type doped portion, a light emitting layer between the n-type doped portion and the p-type doped portion, first and second conductive organic polymers filling a space corresponding to the p-type doped portion and the n-type doped portion, respectively, and a second conductive layer formed on the nanowires. The organic polymers dope the corresponding surface of the nanowires by receiving electrons from the corresponding surface of the nanowires or by providing electrons to the surface of the nanowires.

Abstract: A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped portion on both ends, a light emitting layer between the p-type doped portion and n-type doped portion, and a second conductive layer formed on the nanowires. The doped portions are formed by adsorbing molecules around a circumference thereof.