Patents by Inventor Jong Seob Kim

Jong Seob Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nonvolatile memory device and method of operating and fabricating the same
    Patent number: 7813185
    Abstract: Provided is a method of reliably operating a highly integratable nonvolatile memory device. The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line. In the nonvolatile memory device, data may be erased from the memory transistors by applying an erasing voltage to the bit line or the common source line.
    Type: Grant
    Filed: January 29, 2008
    Date of Patent: October 12, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-ha Hong, Sung-hoon Lee, Jae-woong Hyun, Jai-kwang Shin, Young-gu Jin, Sung-il Park, Jong-seob Kim
  • Flash memory device, method of manufacturing the same, and method of operating the same
    Patent number: 7787302
    Abstract: Provided are a memory device, a method of manufacturing the same, and a method of operating the same. The memory device may include a channel region having an upper end where both sides of the upper end are curved, the curved portions of both sides allowing charges to be injected thereinto in a program or erase voltage such that the curved portions into which the charges are injected are separate from a portion which determines a threshold voltage, and a gate structure on the channel region.
    Type: Grant
    Filed: March 7, 2008
    Date of Patent: August 31, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung-Il Park, Sung-Hoon Lee, Kwang-Soo Seol, Young-Gu Jin, Jong-Seob Kim
  • Spin field effect logic devices
    Publication number: 20100176428
    Abstract: Provided are spin field effect logic devices, the logic devices including: a gate electrode; a channel formed of a magnetic material above the gate electrode to selectively transmit spin-polarized electrons; a source on the channel; and a drain and an output electrode on the channel outputting electrons transmitted from the source. The gate electrode may control a magnetization state of the channel in order to selectively transmit the electrons injected from the source to the channel.
    Type: Application
    Filed: December 17, 2009
    Publication date: July 15, 2010
    Inventors: Ki-ha Hong, Jong-seob Kim, Jai-kwang Shin
  • Organosilane polymer with improved gap-filling property for semiconductor device and coating composition using the same
    Publication number: 20100167553
    Abstract: A polymer for gap-filling in a semiconductor device, the polymer being prepared by polycondensation of hydrolysates of the compound represented by Formula 1, the compound represented by Formula 2, and one or more compounds represented by Formulae 3 and 4: [RO]3Si—[CH2]n—Si[OR]3??(1) wherein n is from 0 to 2 and each R is independently a C1-C6 alkyl group; [RO]3Si—[CH2]nX??(2) wherein X is a C6-C12 aryl group, n is from 0 to 2, and R is a C1-C6 alkyl group; [RO]3Si—R???(3) wherein R and R? are independently a C1-C6 alkyl group; and [RO]3Si—H??(4) wherein R is a C1-C6 alkyl group.
    Type: Application
    Filed: March 8, 2010
    Publication date: July 1, 2010
    Inventors: Chang Soo Woo, Hyun Hoo Sung, Jin Hee Bae, Dong Seon Uh, Jong Seob Kim
  • RESIST UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE USING THE SAME
    Publication number: 20100167212
    Abstract: A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the resist underlayer composition including a solvent and an organosilane-based polymer, the organosilane-based polymer being a polymerization product of at least one first compound represented Chemical Formulae 1 to 3 and at least one second compound represented by Chemical Formulae 4 and 5.
    Type: Application
    Filed: December 30, 2009
    Publication date: July 1, 2010
    Inventors: Hyeon-Mo Cho, Sang-Kyun Kim, Mi-Young Kim, Sang-Ran Koh, Hui-Chang Yun, Yong-Jin Chung, Jong-Seob Kim, In-Sun Jung
  • Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same
    Publication number: 20100167203
    Abstract: A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.
    Type: Application
    Filed: December 30, 2009
    Publication date: July 1, 2010
    Inventors: Hyeon-Mo Cho, Sang-Kyun Kim, Chang-Soo Woo, Mi-Young Kim, Sang-Ran Koh, Hui-Chan Yun, Woo-Jin Lee, Jong-Seob Kim
  • Method of forming core-shell type structure and method of manufacturing transistor using the same
    Publication number: 20100151659
    Abstract: Example embodiments relate to a method of forming a core-shell structure. According to a method, a region in which the core-shell structure will be formed is defined on a substrate, and a core and a shell layer may be sequentially stacked in the defined region. A first shell layer may further be formed between the substrate and the core. When the core and the shell layer are sequentially stacked in the core-shell region, the method may further include forming a groove on the substrate, forming the first shell layer covering surfaces of the groove, forming the core in the groove of which surfaces are covered by the first shell layer, and forming a second shell layer covering the core.
    Type: Application
    Filed: October 29, 2009
    Publication date: June 17, 2010
    Inventors: Ki-ha Hong, Kyoung-won Park, Jai-kwang Shin, Jong-seob Kim, Hyuk-soon Choi
  • COMPOUND FOR GAP-FILLING OF SEMICONDUCTOR DEVICE AND COATING COMPOSITION USING THE SAME
    Publication number: 20100093923
    Abstract: A compound for filling small gaps in a semiconductor device and a composition comprising the compound are provided. The composition can completely fill holes having a diameter of 70 nm or less and an aspect ratio (i.e. height/diameter ratio) of 1 or more in a semiconductor substrate without any defects, e.g., air voids, by a general spin coating technique. In addition, the composition can be completely removed from holes at a controllable rate without leaving any residue by the treatment with a hydrofluoric acid solution after being cured by baking. Furthermore, the composition is highly stable during storage.
    Type: Application
    Filed: December 31, 2007
    Publication date: April 15, 2010
    Inventors: Chang Soo Woo, Hyun Hoo Sung, Jin Hee Bae, Dong Seon Uh, Jong Seob Kim
  • Quantum interference transistors and methods of manufacturing and operating the same
    Publication number: 20100090759
    Abstract: A quantum interference transistor may include a source; a drain; N channels (N?2), between the source and the drain, and having N?1 path differences between the source and the drain; and at least one gate disposed at one or more of the N channels. One or more of the N channels may be formed in a graphene sheet. A method of manufacturing the quantum interference transistor may include forming one or more of the N channels using a graphene sheet. A method of operating the quantum interference transistor may include applying a voltage to the at least one gate. The voltage may shift a phase of a wave of electrons passing through a channel at which the at least one gate is disposed.
    Type: Application
    Filed: September 23, 2009
    Publication date: April 15, 2010
    Inventors: Jai-kwang Shin, Sun-ae Seo, Jong-seob Kim, Ki-ha Hong, Hyun-jong Chung
  • Chemical sensor using thin-film sensing member
    Publication number: 20100079130
    Abstract: Provided is a chemical sensor that may include a first electrode on a substrate, a sensing member covering the first electrode on the substrate, and a plurality of second electrodes on a surface of the sensing member exposing the surface of the sensing member. The chemical sensor may be configured to measure the change in electrical characteristics when a compound to be sensed is adsorbed on the sensing member. Provided also is a chemical sensor array including an array of chemical sensors.
    Type: Application
    Filed: April 3, 2009
    Publication date: April 1, 2010
    Inventors: Ki-ha Hong, Hyuk-soon Choi, Jong-seob Kim, Jai-kwang Shin
  • Luminous device and method of manufacturing the same
    Publication number: 20100081227
    Abstract: A luminous device and a method of manufacturing the luminous device are provided. The luminous device includes a light emitting layer and first and second electrodes connected to the light emitting layer. The light emitting layer is a strained nanowire.
    Type: Application
    Filed: September 16, 2009
    Publication date: April 1, 2010
    Inventors: Kl-ha Hong, Sung-hoon Lee, Jong-seob Kim, Jai-kwang Shin
  • Polymer having antireflective properties, hardmask composition including the same, and process for forming a patterned material layer
    Patent number: 7659051
    Abstract: A naphthalene-backbone polymer represented by Formula 1: wherein n and m are independently at least 1 and less than about 190, R1 is a hydrogen, a hydroxyl, a hydrocarbon group of about 10 carbons or less, or a halogen, R2 is methylene or includes an aryl linking group, R3 is a conjugated diene group, and R4 is an unsaturated dienophile group.
    Type: Grant
    Filed: December 31, 2007
    Date of Patent: February 9, 2010
    Assignee: Cheil Industries, Inc.
    Inventors: Kyong Ho Yoon, Jong Seob Kim, Dong Seon Uh, Chang Il Oh, Kyung Hee Hyung, Min Soo Kim, Jin Kuk Lee
  • Polymer having antireflective properties, hardmask composition including the same, process for forming a patterned material layer, and associated device
    Patent number: 7655386
    Abstract: An antireflective hardmask composition includes an organic solvent, and at least one polymer represented by Formulae A, B or C: In Formulae A and B, the fluorene group is unsubstituted or substituted, in Formula C, the naphthalene group is unsubstituted or substituted, n is at least 1 and is less than about 750, m is at least 1, and m+n is less than about 750, G is an aromatic ring-containing group having an alkoxy group, and R1 is methylene or includes a non-fluorene-containing aryl linking group.
    Type: Grant
    Filed: December 20, 2007
    Date of Patent: February 2, 2010
    Assignee: Cheil Industries, Inc.
    Inventors: Kyung Hee Hyung, Jong Seob Kim, Dong Seon Uh, Chang Il Oh, Kyong Ho Yoon, Min Soo Kim, Jin Kuk Lee
  • Aromatic ring-containing polymer, polymer mixture, antireflective hardmask composition, and associated methods
    Publication number: 20100021830
    Abstract: An aromatic ring-containing polymer, a polymer mixture, an antireflective hardmask composition, and a method for patterning a material on a substrate, the aromatic ring-containing polymer including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3.
    Type: Application
    Filed: October 1, 2009
    Publication date: January 28, 2010
    Inventors: Min Soo Kim, Dong Seon Uh, Chang Il Oh, Kyong Ho Yoon, Kyung Hee Hyung, Jin Kuk Lee, Jong-Seob Kim, Hwan Sung Cheon, Irina Nam, Nataliya Tokareva
  • Organosilane hardmask compositions and methods of producing semiconductor devices using the same
    Patent number: 7629260
    Abstract: Provided herein are hardmask compositions that include an organosilane polymer prepared by the reaction of one or more compounds of Formula (I) Si(OR1)(OR2)(OR3)R4 wherein R1, R2 and R3 may each independently be alkyl acetoxy or oxime; and R4 may be hydrogen, alkyl, aryl or arylalkyl; and wherein the organosilane polymer has a polydispersity in a range of about 1.1 to about 2.
    Type: Grant
    Filed: December 8, 2006
    Date of Patent: December 8, 2009
    Assignee: Cheil Industries, Inc.
    Inventors: Dong Seon Uh, Hui Chan Yun, Jin Kuk Lee, Chang Il Oh, Jong Seob Kim, Sang-Kyun Kim, Sang Hak Lim
  • Cathode material for secondary batteries with non-aqueous electrolyte, a process for preparing the cathode material and lithium secondary battery containing the same
    Patent number: 7625670
    Abstract: Provided are a cathode active material for a non-aqueous electrolyte lithium secondary battery, a process for preparing the same and a lithium secondary battery comprising the same. The cathode active material for a non-aqueous electrolyte lithium secondary battery is represented by the formula LiaNi1?(v+w+x+y+z)MnvCowMxM?yM?zO2 wherein M, M? and M? are independently selected from the group consisting of Al, Mg, Sr, Ca, P, Pb, Y and Zr, and mixtures thereof, a is in a range of 0.9 to 1.05, 1?(v+w+x+y+z) is in a range of 0.685 to 0.745, v is in a range of 0.05 to 0.06, w is in a range of 0.20 to 0.24, and x+y+z is in a range of 0.005 to 0.015.
    Type: Grant
    Filed: March 9, 2006
    Date of Patent: December 1, 2009
    Assignee: Ecopro Co. Ltd.
    Inventors: Young Ki Lee, Dong Hak Kwak, Hui Chan Yun, Jong Seob Kim
  • Luminous device and method of manufacturing the same
    Patent number: 7608852
    Abstract: A luminous device and a method of manufacturing the luminous device are provided. The luminous device includes a light emitting layer and first and second electrodes connected to the light emitting layer. The light emitting layer is a strained nanowire.
    Type: Grant
    Filed: December 27, 2007
    Date of Patent: October 27, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-ha Hong, Sung-hoon Lee, Jong-seob Kim, Jai-kwang Shin
  • Hardmask composition and associated methods
    Publication number: 20090226824
    Abstract: A hardmask composition for processing a resist underlayer film includes a solvent and an organosilane polymer, wherein the organosilane polymer is represented by Formula 6: In Formula 6, R is methyl or ethyl, R? is substituted or unsubstituted cyclic or acyclic alkyl, Ar is an aromatic ring-containing functional group, x, y and z satisfy the relations x+y=4, 0.4?x?4, 0?y?3.6, and 4×10?4?z?1, and n is from about 3 to about 500.
    Type: Application
    Filed: February 6, 2009
    Publication date: September 10, 2009
    Inventors: Sang Kyun Kim, Sang Hak Lim, Mi Young Kim, Sang Ran Koh, Hui Chan Yun, Do Hyeon Kim, Dong Seon Uh, Jong Seob Kim
  • Nonaqueous Electrolyte for Battery
    Publication number: 20090226820
    Abstract: The present invention relates to a nonaqueous electrolyte for a battery, and more particularly to a novel nonaqueous electrolyte for a battery in which a furanone based derivative is added to a conventional nonaqueous electrolyte for the lithium battery to inhibit decomposition of the electrolyte, and thereby the rate of increase of the battery thickness when it is allowed to stand at a high temperature is significantly decreased and capacity storage characteristics at high temperature are improved.
    Type: Application
    Filed: October 27, 2004
    Publication date: September 10, 2009
    Applicant: CHEIL INDUSTRIES, INC.
    Inventors: Jong Ho Jeon, Ho Seok Yang, Jung Kang Oh, Hak Soo Kim, Jong Seob Kim
  • Polymer composition, hardmask composition having antireflective properties, and associated methods
    Publication number: 20090176165
    Abstract: A polymer composition includes an aromatic ring-containing polymer represented by Formula 1: wherein m and n satisfy the relations 1?m<190, 0?n<190, and 1?m+n<190.
    Type: Application
    Filed: December 23, 2008
    Publication date: July 9, 2009
    Inventors: Hwan Sung Cheon, Jong Seob Kim, Kyong Ho Yoon, Min Soo Kim, Jin Kuk Lee, Jee Yun Song