Abstract: A semiconductor device includes a first n? type layer and a second n? type layer that are sequentially disposed on a first surface of an n+ type silicon carbide substrate; a first trench and a second trench that are disposed at the second n? type layer and are spaced apart from each other; a p type region surrounding a lateral surface and a lower surface of the first trench; an n+ type region disposed on the p type region and the second n? type layer; a gate insulating layer disposed in the second trench; a gate electrode disposed on the gate insulating layer; an oxide layer disposed on the gate electrode; a source electrode disposed on the oxide layer and the n+ type region disposed in the first trench; and a drain electrode disposed at a second surface of the n+ type silicon carbide substrate.

Abstract: A semiconductor device is provided. The device includes an n? type layer with a trench disposed in a first surface of an n+ type silicon carbide substrate. An n+ type region and a first p type region are disposed at the n? type layer and at a lateral surface of the trench. A plurality of second p type regions are disposed at the n? type layer and spaced apart from the first p type region. A gate electrode includes a first and a plurality of second gate electrodes disposed at the trench and extending from the first gate electrode, respectively. A source electrode is disposed on and insulated from the gate electrode. A drain electrode is disposed on a second surface of the n+ type silicon carbide substrate. The source electrode contacts the plurality of second p type regions spaced apart with the n? type layer disposed therein.

Abstract: A semiconductor device includes a first n? type layer and a second n? type layer that are sequentially disposed on a first surface of an n+ type silicon carbide substrate; a first trench and a second trench that are disposed at the second n? type layer and are spaced apart from each other; a p type region surrounding a lateral surface and a lower surface of the first trench; an n+ type region disposed on the p type region and the second n? type layer; a gate insulating layer disposed in the second trench; a gate electrode disposed on the gate insulating layer; an oxide layer disposed on the gate electrode; a source electrode disposed on the oxide layer and the n+ type region disposed in the first trench; and a drain electrode disposed at a second surface of the n+ type silicon carbide substrate.

Abstract: Disclosed is a method for bonding with a silver paste, the method including: coating a silver paste on a semiconductor device or a substrate, the silver paste containing silver and indium; disposing the semiconductor on the substrate; and heating the silver paste to form a bonding layer, wherein the semiconductor device and the substrate are bonded to each other through the bonding layer, and wherein the indium is contained in the silver paste at 40 mole % or less.

Abstract: The present invention relates to a movable and height-extensible automated bicycle storage facility of which the height is simply increased by separately manufacturing a section exceeding a height limit under the Road Traffic Act, transporting and assembling the section at a desired place to use the automated bicycle storage facility manufactured in a container shape at the place. The present invention is characterized by ensuring a sufficient height by coupling a height extension cover to the top of the bicycle deck to prevent a bicycle from hitting against the top of the bicycle deck when the bicycle is loaded at an angle in the bicycle deck in the front-rear direction and then lifted and loaded onto the second floor, and by temporarily reducing the height by separating the height extension cover in order not to violate the Road Traffic Act when moving the bicycle deck to another place.

Abstract: The present invention relates to a height-extensible container-type warehouse that is manufactured in a container type at a factory, can be transported to a desired place, and can be increased in height at the place by coupling a section, which exceeds a height limit under the Road Traffic Act and is separately manufactured, to an opening of the warehouse in order to increase the height thereof.

Abstract: A semiconductor device includes: a plurality of n type pillar regions and an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a p type epitaxial layer and an n+ region disposed on the plurality of n type pillar regions and the n? type epitaxial layer; a trench penetrating the n+ region and the p type epitaxial layer and disposed on the plurality of n type pillar regions and the n? type epitaxial layer; a gate insulating film disposed within the trench; a gate electrode disposed on the gate insulating film; an oxide film disposed on the gate electrode; a source electrode disposed on the p type epitaxial layer, the n+ region, and the oxide film; and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein each corner portion of the trench is in contact with a corresponding n type pillar region.

Abstract: The present inventive concept relates to a semiconductor device, and more particularly to a semiconductor device that can increase the amount of current by reducing impedance, and a method of manufacturing the semiconductor device.

Abstract: A semiconductor device includes: a plurality of n type pillar regions and an n? type epitaxial layer disposed on a first surface of an n++ type silicon carbide substrate; a p type epitaxial layer and an n+ region disposed on the plurality of n type pillar regions and the n?type epitaxial layer; a trench penetrating the n+ region and the p type epitaxial layer and disposed on the plurality of n type pillar regions and the n?type epitaxial layer; a gate insulating film disposed within the trench; a gate electrode disposed on the gate insulating film; an oxide film disposed on the gate electrode; a source electrode disposed on the p type epitaxial layer, the n+ region, and the oxide film; and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein each corner portion of the trench is in contact with a corresponding n type pillar region.

Abstract: A schottky barrier diode includes an n? type epitaxial layer disposed at a first surface of an n+ type silicon carbide substrate, a plurality of n type pillar areas disposed in the n? type epitaxial layer at a first portion of a first surface of the n+ type silicon carbide substrate, a plurality of p+ areas disposed at a surface of the n? type epitaxial layer and separated from the n type pillar area, a schottky electrode disposed on the n? type epitaxial layer and the p+ area, and an ohmic electrode disposed at a second surface of the n+ type silicon carbide substrate. A doping density of the n type pillar area is larger than a doping density of the n? type epitaxial layer.

Abstract: Disclosed is a method for bonding with a silver paste, the method including: coating a silver paste on a semiconductor device or a substrate, the silver paste containing silver and indium; disposing the semiconductor on the substrate; and heating the silver paste to form a bonding layer, wherein the semiconductor device and the substrate are bonded to each other through the bonding layer, and wherein the indium is contained in the silver paste at 40 mole % or less.

Abstract: A method for bonding with a silver paste includes coating a semiconductor device or a substrate with the silver paste. The silver paste contains a plurality of silver particles and a plurality of bismuth particles. The method further includes disposing the semiconductor on the substrate and forming a bonding layer by heating the silver paste, wherein the semiconductor and the substrate are bonded to each other by the bonding layer.

Abstract: A semiconductor device includes: a plurality of n type pillar regions and an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a p type epitaxial layer and an n+ region disposed on the plurality of n type pillar regions and the n? type epitaxial layer; a trench penetrating the n+ region and the p type epitaxial layer and disposed on the plurality of n type pillar regions and the n? type epitaxial layer; a gate insulating film disposed within the trench; a gate electrode disposed on the gate insulating film; an oxide film disposed on the gate electrode; a source electrode disposed on the p type epitaxial layer, the n+ region, and the oxide film; and a drain electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein each corner portion of the trench is in contact with a corresponding n type pillar region.

Abstract: A Schottky barrier diode includes: an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a first p+ region disposed on the n? type epitaxial layer; an n type epitaxial layer disposed on the n? type epitaxial layer and the first p+ region; a second p+ region disposed on the n type epitaxial layer, and being in contact with the first p+ region; a Schottky electrode disposed on the n type epitaxial layer and the second p+ region; and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate. Also, the first p+ region has a lattice shape including a plurality of vertical portions and horizontal portions connecting both ends of the respective vertical portions to each other.

Abstract: A Schottky barrier diode and a method of manufacturing the Schottky barrier diode are provided. The diode includes an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and having an upper surface, a lower surface, and an inclined surface that connects the upper surface and the lower surface. A p region is disposed on the inclined surface of the n? type epitaxial layer and a Schottky electrode is disposed on the upper surface of the n? type epitaxial layer and the p region. In addition, an ohmic electrode is disposed on a second surface of the n+ type silicon carbide substrate.

Abstract: A method of manufacturing a semiconductor device may include sequentially forming an n-type epitaxial layer, a p type epitaxial layer, and an n+ region on a first surface of an n+ type silicon carbide substrate; forming a buffer layer on the n+ region; forming a photosensitive film pattern on a part of the buffer layer; etching the buffer layer using the photosensitive film pattern as a mask to form a buffer layer pattern; sequentially forming a first metal layer and a second metal layer which include a first portion and a second portion; removing one or more components to expose a part of the n+ region; and etching the exposed part of the n+ region using the first portion of the first metal layer and the first portion of the second metal layer as masks to form a trench.

Abstract: A schottky barrier diode includes: an n? type epitaxial layer that is disposed at a first surface of an n+ type silicon carbide substrate; a plurality of n type pillar areas that are disposed at the inside of the n? type epitaxial layer and that are disposed at a first portion of the first surface of the n+ type silicon carbide substrate; a p type area that is disposed at the inside of the n? type epitaxial layer and that is extended in a direction perpendicular to the n type pillar areas; a plurality of p+ areas in which the n? type epitaxial layer is disposed at a surface thereof and that are separated from the n type pillar areas and the p type area; a schottky electrode that is disposed on the n? type epitaxial layer and the p+ areas; and an ohmic electrode that is disposed at a second surface of the n+ type silicon carbide substrate.

Abstract: The present inventive concept has been made in an effort to increase the width of a channel in a silicon carbide MOSFET using a trench gate. According to the exemplary embodiment of the present inventive concept, the width of a channel can be increased, compared with the conventional art, by forming a plurality of protrusions extending to the p type epitaxial layer on both sides of the trench.

Abstract: A semiconductor device includes: a first n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate including a current carrying region and termination regions positioned at both sides of the current carrying region; a p type epitaxial layer disposed on the first n? type epitaxial layer; a second n? type epitaxial layer disposed on the p type epitaxial layer; a first trench disposed in the current carrying region; a second trench disposed in each termination region; a gate insulating layer disposed in the first trench; a gate electrode disposed on the gate insulating layer; and a termination insulating layer disposed in the second trench, in which a side of the termination insulating layer contacts the p type epitaxial layer and the second n? type epitaxial layer.

Abstract: The present invention relates to an LED lighting device in a heat radiating, waterproof and moisture-proof structure using a fluid, wherein light from an LED element is concentrated to a lens such that the light with high intensity of illumination reaches a long distance and a frame is filled with a fluid such that heat radiation is expedited and water and moisture penetration phenomenon is prevented, thereby being used both under water and on the ground.