Abstract: Provided is a method and apparatus for activating a link between a first node and a second node for transmission of a lower order optical channel data unit (ODU), in which the link may be activated based on a first adaptation function between a higher order ODU and the lower order ODU performed by the second node and a second adaption function between the higher order ODU and the lower order ODU performed by the first node, and may also be activated when the first node receives an activation message from a third node, a preceding node of the first node.

Abstract: A schottky barrier diode may include a first n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate, a first p+ region disposed in the first n? type epitaxial layer, a second n type epitaxial layer disposed on the first n? type epitaxial layer and the first p+ region, a second p+ region disposed in the second n type epitaxial layer, a schottky electrode disposed on the second n type epitaxial layer and the second p+ region, and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate, wherein the first p+ region and the second p+ region may be in contact with each other.

Abstract: Provided herein is a method for realizing time reduction in shared mesh protection, the method including, in a protection path node, in response to a resource being used for a first protection path by a node, receiving a resource use request for setting a second protection path from another node; activating a protection switch through comparison of priorities of protection paths at the resource use request received; and transmitting, by the activation of a protection switch, to a next protection path node a first shared mesh protection message where a revert (RT) message for the first protection path and a protection switch (SF) message for setting a second protection path are multiplexed.

Abstract: A semiconductor device includes: a first n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate including a current carrying region and termination regions positioned at both sides of the current carrying region; a p type epitaxial layer disposed on the first n? type epitaxial layer; a second n? type epitaxial layer disposed on the p type epitaxial layer; a first trench disposed in the current carrying region; a second trench disposed in each termination region; a gate insulating layer disposed in the first trench; a gate electrode disposed on the gate insulating layer; and a termination insulating layer disposed in the second trench, in which a side of the termination insulating layer contacts the p type epitaxial layer and the second n? type epitaxial layer.

Abstract: A method of joining silver paste is provided. The method includes preparing silver paste comprising silver powders and lead powders and heating silver paste. The silver powders are then joined.

Abstract: Provided herein is a method and apparatus for selecting a protection path in an ODU SMP (optical channel data unit shared mesh protection) network, the method including in response to a shared resource managed by an intermediate node being preoccupied by a certain protection path, searching by the intermediate node for an identifier relevant to the shared resource; determining by the intermediate node whether or not the searched identifier is registered; in response to determining that the identifier is registered, searching by the intermediate node for a port corresponding to the identifier; and in response to the port being registered, transmitting by the intermediate node a shared resource availability message to a node corresponding to the port.

Abstract: A Schottky barrier diode includes: an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a first p+ region disposed on the n? type epitaxial layer; an n type epitaxial layer disposed on the n? type epitaxial layer and the first p+ region; a second p+ region disposed on the n type epitaxial layer, and being in contact with the first p+ region; a Schottky electrode disposed on the n type epitaxial layer and the second p+ region; and an ohmic electrode disposed on a second surface of the n+ type silicon carbide substrate. Also, the first p+ region has a lattice shape including a plurality of vertical portions and horizontal portions connecting both ends of the respective vertical portions to each other.

Abstract: A semiconductor device includes: a first n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate; a p type epitaxial layer disposed on the first n? type epitaxial layer; a second n? type epitaxial layer disposed on the p type epitaxial layer; an n+ region disposed on the second n? type epitaxial layer; a trench passing through the second n? type epitaxial layer, the p type epitaxial layer, and the n+ region, and disposed on the first n? type epitaxial layer; a p+ region disposed on the p type epitaxial layer and separated from the trench; and a gate insulating layer positioned in the trench, in which channels are disposed in the second n? type epitaxial layer of both sides of the trench and the p type epitaxial layer of both sides of the trench.

Abstract: Disclosed are a semiconductor device and a method of manufacturing a semiconductor device. The device may include an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate, a p type epitaxial layer disposed on the n? type epitaxial layer, an n+ region disposed on the p type epitaxial layer, a trench passing through the p type epitaxial layer and the n+ region and disposed on the n? type epitaxial layer, a p+ region disposed on the n? type epitaxial layer and separated from the trench, a gate insulating layer positioned in the trench, a gate electrode positioned on the gate insulating layer, an oxide layer positioned on the gate electrode, a source electrode positioned on the n+ region, the oxide layer, and the p+ region, and a drain electrode positioned on a second surface of the n+ type silicon carbide substrate, in which channels are positioned on both sides of the trench.

Abstract: The present inventive concept has been made in an effort to improve the breakdown voltage of a silicon carbide MOSFET using a trench gate. A semiconductor device according to the present inventive concept includes a p type pillar region disposed below the trench, spaced apart from the trench or a first p type pillar region and a second p type pillar region disposed below the trench and corresponding to two corners of the trench.

Abstract: A Schottky barrier diode and a method of manufacturing the diode are provided. The diode includes an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and a plurality of p+ regions disposed within the n? type epitaxial layer. An n+ type epitaxial layer is disposed on the n? type epitaxial layer, a Schottky electrode is disposed on the n+ type epitaxial layer, and an ohmic electrode is disposed on a second surface of the n+ type silicon carbide substrate. The n+ type epitaxial layer includes a plurality of pillar parts disposed on the n? type epitaxial layer and a plurality of openings disposed between the pillar parts and that expose the p+ regions. Each of the pillar parts includes substantially straight parts that contact the n? type epitaxial layer and substantially curved parts that extend from the substantially straight parts.

Abstract: Provided is a method of manufacturing a semiconductor device including sequentially forming an n-type epitaxial layer, a p type epitaxial layer, and an n+ region on a first surface of an n+ type silicon carbide substrate; forming a buffer layer on the n+ region; forming a photosensitive film pattern on a part of the buffer layer; etching the buffer layer using the photosensitive film pattern as a mask to form a buffer layer pattern; sequentially forming a first metal layer and a second metal layer which include a first portion and a second portion; removing one or more components to expose a part of the n+ region; and etching the exposed part of the n+ region using the first portion of the first metal layer and the first portion of the second metal layer as masks to form a trench.

Abstract: A Schottky barrier diode and a method of manufacturing the diode are provided. The diode includes an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and a plurality of p+ regions disposed within the n? type epitaxial layer. An n+ type epitaxial layer is disposed on the n? type epitaxial layer, a Schottky electrode is disposed on the n+ type epitaxial layer, and an ohmic electrode is disposed on a second surface of the n+ type silicon carbide substrate. The n+ type epitaxial layer includes a plurality of pillar parts disposed on the n? type epitaxial layer and a plurality of openings disposed between the pillar parts and that expose the p+ regions. Each of the pillar parts includes substantially straight parts that contact the n? type epitaxial layer and substantially curved parts that extend from the substantially straight parts.

Abstract: The present invention provides a method for manufacturing a silicon carbide Schottky barrier diode. In the method, an n? epitaxial layer is deposited on an n+ substrate. A sacrificial oxide film is formed on the n? epitaxial layer by heat treatment, and then a portion where a composite oxide film is to be formed is exposed by etching. Nitrogen is implanted into the n? epitaxial layer and the sacrificial oxide film using nitrogen plasma. A silicon nitride is deposited on the n? epitaxial layer and the sacrificial oxide film. The silicon nitride is thermally oxidized to form a composite oxide film. An oxide film in a portion where a Schottky metal is to be deposited is etched, and then the Schottky metal is deposited, thereby forming a silicon carbide Schottky barrier diode.

Abstract: A Schottky barrier diode and a method of manufacturing the Schottky barrier diode are provided. The diode includes an n? type epitaxial layer disposed on a first surface of an n+ type silicon carbide substrate and having an upper surface, a lower surface, and an inclined surface that connects the upper surface and the lower surface. A p region is disposed on the inclined surface of the n? type epitaxial layer and a Schottky electrode is disposed on the upper surface of the n? type epitaxial layer and the p region. In addition, an ohmic electrode is disposed on a second surface of the n+ type silicon carbide substrate.

Abstract: The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n? epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n? epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n? epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.

Abstract: A vehicle with independently driven multiple axles and a controller which independently drives the multiple axles are disclosed. The controller includes a first controller which determines a target control value including at least one of a mechanical steering angle of each of a plurality of wheels of a vehicle, a target yaw moment of the vehicle, a target longitudinal force of the vehicle, and a target wheel speed of each of the plurality of wheels; and a second controller which determines wheel torques of the plurality of wheels, which drive the plurality of wheels independently, based on the target control value, wherein the wheel torques of the plurality of wheels are different from one another.

Abstract: The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n? epitaxial layer, an n+ epitaxial region, and a Schottky metal layer. The primary n? epitaxial layer is deposited on an n+ substrate joined with an ohmic metal layer at an undersurface thereof. The n+ epitaxial region is formed by implanting n+ ions into a central region of the primary n? epitaxial layer. The Schottky metal layer is deposited on the n+ epitaxial layer.

Abstract: A semiconductor device includes an n+ type silicon carbide substrate; a plurality of n type pillar regions, a plurality of p type pillar regions, and an n? type epitaxial layer disposed on a first surface of the n+ type silicon carbide substrate; a p type epitaxial layer and an n+ region sequentially disposed on the n? type epitaxial layer; a trench penetrating the n+ region and the p type epitaxial layer and disposed on the n? type epitaxial layer; a gate insulating film disposed within the trench; a gate electrode disposed on the gate insulating film; an oxide film disposed on the gate electrode; a source electrode disposed on the p type epitaxial layer, the n+ region, and the oxide film; and a drain electrode positioned on a second surface of the n+ type silicon carbide substrate.

Abstract: A method for fabricating a semiconductor device includes: sequentially forming an n? type epitaxial layer, a p type epitaxial layer, and a first n+ region on a first surface of an n+ type silicon carbide substrate; forming a trench by penetrating the first n+ region and the p type epitaxial layer, and etching part of the n? type epitaxial layer; forming a buffer layer in the trench and on the first n+ region; etching the buffer layer to form a buffer layer pattern on both sidewalls defined by the trench; forming a first silicon film on the first n+ region, the buffer layer pattern, and a surface of the n? type epitaxial layer exposed by the trench; oxidizing the first silicon film to form a first silicon oxide film; removing the buffer layer pattern by an ashing process to form a first silicon oxide film pattern; forming a second silicon film on the first silicon oxide film pattern and in the trench; oxidizing the second silicon film to form a second silicon oxide film; and etching the second silicon oxide fi