Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.

Abstract: A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device structure (e.g., a sensor device structure), and method for manufacturing thereof, that comprises a three-dimensional package structure free of wire bonds, through silicon vias, and/or flip-chip bonding.

Abstract: A semiconductor device and manufacturing method thereof. Various aspects of the disclosure may, for example, comprise forming a back end of line layer on a dummy substrate, completing at least a first portion of an assembly, and removing the dummy substrate.

Abstract: A semiconductor device with a redistribution structure on partial encapsulation is disclosed and may include an electronic device having a top surface, a bottom surface, and side surfaces between the top and bottom surfaces of the electronic device. An encapsulant may encapsulate the side surfaces of the electronic device, a contact pad may be on the top surface of the electronic device, and a redistribution structure may be coupled to the contact pad. The redistribution structure may include a linear portion and a bump pad, and a conductive bump on the bump pad may include a main bump and a protruding part extending toward the linear portion, where the protruding part may be smaller than the main bump.

Abstract: Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.

Abstract: A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device structure (e.g., a sensor device structure), and method for manufacturing thereof, that comprises a three-dimensional package structure free of wire bonds, through silicon vias, and/or flip-chip bonding.

Abstract: An electronic device and a method of making an electronic device. As non-limiting examples, various aspects of this disclosure provide various electronic devices, and methods of making thereof, that comprise a permanently coupled carrier that enhances reliability of the electronic devices.

Abstract: A semiconductor package, and a method of manufacturing thereof, comprising a contact in a plated sidewall encapsulant opening, substantially as shown in and/or described in connection with at least one of the figures, as set forth more completely in the claims.

Abstract: A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include a semiconductor die having a first surface, a second surface opposite to the first surface, and side surfaces between the first and second surfaces; an encapsulant encapsulating the side surfaces of the semiconductor die; a contact pad on the first surface of the semiconductor die; and a redistribution layer coupled to the contact pad The redistribution layer may include a linear portion and a circular pad, and a hemispherical conductive bump on the circular pad may include a protruding part extending toward the linear portion and having a radius less than the hemispherical conductive bump. The second surface of the semiconductor die may be coplanar with a surface of the encapsulant. A dielectric layer may cover a portion of the first surface of the semiconductor die and a first surface of the encapsulant.

Abstract: An electronic device and a method of making an electronic device. As non-limiting examples, various aspects of this disclosure provide various electronic devices, and methods of making thereof, that comprise a permanently coupled carrier that enhances reliability of the electronic devices.

Abstract: A wafer level fan out semiconductor device and a manufacturing method thereof are provided. A first sealing part is formed on lateral surfaces of a semiconductor die. A plurality of redistribution layers are formed on surfaces of the semiconductor die and the first sealing part, and solder balls are attached to the redistribution layers. The solder balls are arrayed on the semiconductor die and the first sealing part. In addition, a second sealing part is formed on the semiconductor die, the first sealing part and lower portions of the solder balls. The solder balls are exposed to the outside through the second sealing part. Since the first sealing part and the second sealing part are formed of materials having thermal expansion coefficients which are the same as or similar to each other, warpage occurring to the wafer level fan out semiconductor device can be suppressed.

Abstract: A semiconductor device and manufacturing method thereof. Various aspects of the disclosure may, for example, comprise connection verification for a first one or more mounted components prior to additional assembly.

Abstract: A wafer level fan out semiconductor device and a manufacturing method thereof are provided. A first sealing part is formed on lateral surfaces of a semiconductor die. A plurality of redistribution layers are formed on surfaces of the semiconductor die and the first sealing part, and solder balls are attached to the redistribution layers. The solder balls are arrayed on the semiconductor die and the first sealing part. In addition, a second sealing part is formed on the semiconductor die, the first sealing part and lower portions of the solder balls. The solder balls are exposed to the outside through the second sealing part. Since the first sealing part and the second sealing part are formed of materials having thermal expansion coefficients which are the same as or similar to each other, warpage occurring to the wafer level fan out semiconductor device can be suppressed.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: Provided are a semiconductor device and a method of manufacturing the same. A carrier is removed after a first semiconductor die and a second semiconductor die are stacked on each other, and then a first encapsulant is formed, so that the carrier may be easily removed when compared to approaches in which a carrier is removed from a wafer having a thin thickness.

Abstract: In one embodiment, a semiconductor package includes a semiconductor die having conductive pads. A lead frame is directly connected to the conductive pads using an electrochemically formed layer or a conductive adhesive layer thereby facilitating an electrical connection between the conductive pads of the semiconductor die and the lead frame without using separate wire bonds or conductive bumps.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor package, and method of manufacturing thereof, that comprises a signal redistribution structure that comprises an anti-oxidation layer.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.