Abstract: A semiconductor device and manufacturing method thereof. Various aspects of the disclosure may, for example, comprise forming a back end of line layer on a dummy substrate, completing at least a first portion of an assembly, and removing the dummy substrate.

Abstract: A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device structure (e.g., a sensor device structure), and method for manufacturing thereof, that comprises a three-dimensional package structure free of wire bonds, through silicon vias, and/or flip-chip bonding.

Abstract: Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device, and method of manufacturing thereof, that comprises a redistribution structure formed on a stiffening layer.

Abstract: A semiconductor device and a manufacturing method thereof are disclosed. A first insulation layer is formed on a semiconductor die, a redistribution layer electrically connected to a bond pad is formed on the first insulation layer, and a second insulation layer covers the redistribution layer. The second insulation layer is made of a cheap, non-photosensitive material. Accordingly, the manufacturing cost of the semiconductor device can be reduced.

Abstract: A semiconductor device with plated pillars and leads is disclosed and may include a semiconductor die comprising a conductive pillar, a conductive lead electrically coupled to the conductive pillar, a metal plating layer covering the conductive lead and conductive pillar, and an encapsulant material encapsulating the semiconductor die and at least a portion of the plating layer. The pillar, lead, and plating layer may comprise copper, for example. The plating layer may fill a gap between the pillar and the lead. A portion of the metal plating layer may, for example, comprise an external lead. The metal plating layer may cover a side surface of the pillar and a top surface, side surface, and at least a portion of a bottom surface of the lead. The metal plating layer may cover side and bottom surfaces of the pillar and top, side, and at least a portion of bottom surfaces of the conductive lead.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: A semiconductor device and manufacturing method thereof. Various aspects of the disclosure may, for example, comprise forming a back end of line layer on a dummy substrate, completing at least a first portion of an assembly, and removing the dummy substrate.

Abstract: In one embodiment, an electronic device package structure includes an electronic die having conductive pads on one surface. The one surface is further attached to at least one lead. A conductive layer covers at least one conductive pad and at least portion of the lead thereby electrically connecting the lead to the conductive pad.

Abstract: A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device structure (e.g., a sensor device structure), and method for manufacturing thereof, that comprises a three-dimensional package structure free of wire bonds, through silicon vias, and/or flip-chip bonding.

Abstract: An electronic device and a method of making an electronic device. As non-limiting examples, various aspects of this disclosure provide various electronic devices, and methods of making thereof, that comprise a permanently coupled carrier that enhances reliability of the electronic devices.

Abstract: Disclosed are a semiconductor device and a manufacturing method thereof, which can achieve miniaturization and improvement in the integration level by forming a substrate using a pattern layer implemented on a wafer in a semiconductor fabrication (FAB) process. In one exemplified embodiment, the manufacturing method of the semiconductor device includes preparing a first semiconductor die including a plurality of through electrodes and a plurality of first conductive pillars, mounting the first semiconductor die to connect the first conductive pillars to the pattern layer provided on a wafer, forming a first encapsulant to cover the pattern layer and the first semiconductor die, mounting a second semiconductor die to electrically connect second conductive pillars provided in the second semiconductor die to the plurality of through electrodes exposed to a second surface of the first semiconductor die, and removing the wafer from a first surface of the pattern layer.

Abstract: A semiconductor device with reduced thickness is disclosed and may include forming a back end of line (BEOL) comprising a redistribution layer on a dummy substrate. A first semiconductor die may be bonded to a first surface of the BEOL and a second semiconductor die may be bonded to the first semiconductor die. The first and second semiconductor dies may be electrically coupled to the BEOL. The first and second semiconductor dies and the BEOL may be encapsulated utilizing a first encapsulant. The dummy substrate may be removed thereby exposing a second surface of the BEOL opposite to the first surface. A solder ball may be placed on the exposed second surface of the BEOL. The second semiconductor may be stacked stepwise on the first semiconductor and may be flip-chip bonded. The semiconductor dies may be electrically coupled to the BEOL utilizing a lateral plating layer or conductive wires.

Abstract: A semiconductor package, and a method of manufacturing thereof, comprising a contact in a plated sidewall encapsulant opening, substantially as shown in and/or described in connection with at least one of the figures, as set forth more completely in the claims.

Abstract: Provided are a semiconductor device and a method of manufacturing the same. A carrier is removed after a first semiconductor die and a second semiconductor die are stacked on each other, and then a first encapsulant is formed, so that the carrier may be easily removed when compared to approaches in which a carrier is removed from a wafer having a thin thickness.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: A semiconductor device with redistribution layers on partial encapsulation is disclosed and may include a semiconductor die having a first surface, a second surface opposite to the first surface, and side surfaces between the first and second surfaces; an encapsulant encapsulating the side surfaces of the semiconductor die; a contact pad on the first surface of the semiconductor die; and a redistribution layer coupled to the contact pad The redistribution layer may include a linear portion and a circular pad, and a hemispherical conductive bump on the circular pad may include a protruding part extending toward the linear portion and having a radius less than the hemispherical conductive bump. The second surface of the semiconductor die may be coplanar with a surface of the encapsulant. A dielectric layer may cover a portion of the first surface of the semiconductor die and a first surface of the encapsulant.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: A semiconductor device structure and a method for manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device structure (e.g., a sensor device structure), and method for manufacturing thereof, that comprises a three-dimensional package structure free of wire bonds, through silicon vias, and/or flip-chip bonding.

Abstract: In one embodiment, a semiconductor package includes a semiconductor die having conductive pads. A lead frame is directly connected to the conductive pads using an electrochemically formed layer or a conductive adhesive layer thereby facilitating an electrical connection between the conductive pads of the semiconductor die and the lead frame without using separate wire bonds or conductive bumps.