Abstract: The present disclosure provides a polishing pad, which may maintain polishing performances required for a polishing process, such as a removal rate and a polishing profile, minimize defects that may occur on a wafer during the polishing process, and polish layers of different materials so as to have the same level of flatness even when the layers are polished at the same time, and a method for producing the polishing pad. In addition, according to the present disclosure, it is possible to determine a polishing pad, which shows an optimal removal rate selectivity along with excellent performance in a CMP process, through the physical property values of the polishing pad without a direct polishing test.

Abstract: The embodiments provide a process for preparing a polishing sheet, a polishing pad using the same, and a process for preparing a semiconductor device using the same. The process for preparing a polishing sheet comprises forming a pattern on the surface of a polymer sheet and winding the patterned polymer sheet to form a wound roll in a cylindrical shape. Thus, there are great advantages in that it is possible to control the size and distribution ratio of a fine and uniform pattern at a desired location in an economical and efficient way and to freely design the type, size, structure, physical properties, and the like of the polishing sheet according to the purpose, whereby the application field can be expanded, and a bulk structure can be manufactured.

Abstract: A conditioning device includes: an ejector for ejecting steam to a rotating polishing pad; and an ejector support supporting the ejector. The ejector includes a plurality of nozzles for ejecting the steam to the polishing pad and a nozzle heater for heating the plurality of nozzles. The nozzle heater is configured to heat nozzles disposed to correspond to a peripheral region of the polishing pad, among the plurality of nozzles, to a higher temperature than nozzles disposed to correspond to a central region of the polishing pad among the plurality of nozzles.

Abstract: The present invention discloses a polishing pad comprising a laminate composed of a polishing layer, an adhesive layer, and a cushion layer, wherein the cushion layer has a water absorption rate of 100% or less, and a process for manufacturing the polishing pad.

Abstract: Embodiments relate to a porous polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. According to the embodiments, the size and distribution of the plurality of pores contained in the porous polishing pad can be adjusted in light of the volume thereof. Thus, the plurality of pores have an apparent volume-weighted average pore diameter in a specific range, thereby providing a porous polishing pad that is excellent in such physical properties as polishing rate and the like.

Abstract: Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. According to the embodiments, the size and distribution of the plurality of pores contained in the porous polyurethane polishing pad can be adjusted. Thus, it is possible to provide a porous polyurethane polishing pad that has enhanced physical properties such as a proper level of withstand voltage, excellent polishing performance (i.e., polishing rate), and the like.

Abstract: Through a combination of a multi-stage adhesive layer structure, a compressed region structure, and a barrier layer, the polishing pad according to the present disclosure can minimize the leakage of liquid components flowing through the interface between the window and the polishing pad and realize excellent long-term durability without leakage even when substantially applied to a polishing process for a long time. In the method for manufacturing a semiconductor device, the specific structure having the window of the polishing pad applied thereto as described above is combined with the optimal process conditions related to the polishing process so that the process efficiency can be further improved, and excellent quality can be secured in terms of polishing rate, polishing flatness, defect prevention, and the like.

Abstract: A polishing pad includes a polyurethane, wherein the polyurethane includes a fluorinated repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is 40 or less; wherein R11 and R12 are each independently selected from the group consisting of hydrogen, C1-C10 alkyl groups, and fluorine, with the proviso that at least one of R11 and R12 is fluorine, L is a C1-C5 alkylene group or —O—, R13 and R14 are each independently selected from the group consisting of hydrogen, C1-C10 alkyl groups, and fluorine, with the proviso that at least one of R13 and R14 is fluorine, and n and m are each independently an integer from 0 to 20, with the proviso that n and m are not simultaneously 0.

Abstract: The present disclosure is to provide a polishing pad which is capable of providing physical properties corresponding to various polishing purposes for various polishing objects through the subdivided structural design in a thickness direction, and of securing environmental friendliness by applying a recycled or recyclable material to at least some components, in relation to disposal after use, unlike the conventional polishing pad. Specifically, it includes a polishing layer, wherein the polishing layer includes a polishing variable layer having a polishing surface; and a polishing constant layer disposed on a rear surface side of the polishing variable layer opposite to the polishing surface.

Abstract: Provided are a polishing pad provided with a structural feature capable of maximizing the leakage prevention effect, the polishing pad including: a polishing layer including a first surface which is a polished surface and a second surface which is an opposite surface thereof, and including a first through hole passing through the first surface and the second surface; a window disposed in the first through hole; and a support layer disposed at the second surface of the polishing layer.

Abstract: Provided are a polishing device including: a surface plate; a polishing pad mounted on the surface plate; a carrier for accommodating a polishing object; and a slurry supply unit including at least one nozzle, wherein the carrier performs a vibrating motion in a trajectory from the center of the surface plate to the end of the surface plate, and the slurry supply unit performs a vibrating motion at the same trajectory and speed as those of the vibrating motion of the carrier, as a polishing device which includes a slurry supply unit enabling subdivided driving in the supply of a polishing slurry, and in which the driving of the slurry supply unit has an advantage enabling optimized driving in an organic relationship between rotation and/or vibrating motion of the carrier and the surface plate and vertical pressurization conditions, etc. for the polishing surface of the carrier.

Abstract: An embodiment relates to a polishing pad which is used in a chemical mechanical planarization (CMP) process and has excellent airtightness, wherein the polishing pad is excellent in airtightness of a window opening and thus can prevent water leakage that may occur during a CMP process.

Abstract: In the composition according to the embodiment, the content of an unreacted diisocyanate monomer in a urethane-based prepolymer may be controlled to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.

Abstract: The present invention relates to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, to a process for preparing the same, and to a process for preparing a semiconductor device using the same. The polishing pad according to an embodiment can achieve low hardness by comprising a polishing layer formed using a curing agent of specific components. It is possible to enhance the mechanical properties of the polishing pad, as well as to improve the surface defects appearing on the surface of a semiconductor substrate, by controlling the surface roughness reduction rate and the recovery elasticity index of the polishing pad to specific ranges. It is also possible to further enhance the polishing rate.

Abstract: Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductor devices. The polishing pad may secure excellent polishing rate and within-wafer non-uniformity by controlling the physical properties such as initial load resistivity and compressive elasticity of the cushion layer and/or the laminate as defined by Equations 1 and 2: L ? R L ? ( % ) = T ? 1 ? L - T ? 2 ? L T ? 1 ? L - T ? 3 ? L × 100 [ Equation ? ? 1 ] C ? E L ? ( % ) = T ? 4 ? L - T ? 3 ? L T ? 2 ? L - T ? 3 ? L × 1 ? 00.

Abstract: Provided is a polishing pad that comprises a plurality of first grooves that have a shape of geometric figures that share a center; and a plurality of second grooves that radially extend from the center to the outer perimeter, wherein the depth of the second grooves is equal to, or deeper than, the depth of the first grooves. It is possible for the polishing pad to rapidly discharge any debris generated during the polishing process to reduce such defects as scratches on the surface of a wafer.

Abstract: A polishing pad includes a polishing layer, wherein the polishing layer includes zinc (Zn), and a concentration of the zinc (Zn) is 0.5 ppm to 40 ppm parts by weight based on the total weight of the polishing layer. In an exemplary embodiment, a polishing pad is provided wherein a concentration of the zinc (Zn) is 0.5 ppm to 40 ppm parts by weight based on the total weight of the polishing layer, a concentration of the iron (Fe) is 1 ppm to 50 ppm parts by weight based on the total weight of the polishing layer, and a concentration of the aluminum (Al) is 2 ppm to 50 ppm parts by weight based on the total weight of the polishing layer.

Abstract: The present invention relates to a polishing pad, a method for producing the same, and a method of fabricating a semiconductor device using the same. According to the present invention, it is possible to prevent defects from occurring due to an inorganic component contained in a polishing layer during a polishing process, by limiting the content range of the inorganic component contained in the polishing layer. In addition, an unexpanded solid foaming agent is contained in a polishing composition for producing a polishing layer and is expanded during a curing process to form a plurality of uniform pores in the polishing layer, and the content range of the inorganic component contained in the polishing layer, thereby preventing defects from occurring during the polishing process.

Abstract: The polishing pad according to an embodiment adjusts the content of elements present in the polishing layer, thereby controlling the bonding strength between the polishing pad and the polishing particles and enhancing the bonding strength between the polishing particles and the semiconductor substrate (or wafer), resulting in an increase in the polishing rate. It is possible to enhance not only the mechanical properties of the polishing pad such as hardness, tensile strength, elongation, and modulus, but also the polishing rate for both a tungsten layer or an oxide layer. Accordingly, it is possible to efficiently fabricate a semiconductor device of excellent quality using the polishing pad.

Abstract: The present disclosure relates to a polishing pad, a method for manufacturing the polishing pad, and a method for manufacturing a semiconductor device using the polishing pad. The polishing pad increases the area in direct contact with the semiconductor substrate during the polishing process and can prevent defects occurring on the surface of the semiconductor substrate by forming a plurality of uniform pores in the polishing layer, thereby adjusting the surface roughness characteristics of the polishing surface of the polishing layer. Further, the present disclosure may provide a method for manufacturing a semiconductor device to which the polishing pad is applied.