Abstract: The present invention provides a polishing pad whose crosslinking density is adjusted to enhance the performance of the CMP process such as polishing rate and cut pad rate, in addition, in the process for preparing a polishing pad according to the embodiment, it is possible to implement such a crosslinking density by a simple method of controlling the preheating temperature of the mold for curing, Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.

Abstract: The present invention relates to a polishing pad that minimizes the occurrence of defects and a process for preparing the same, Since the polishing pad comprises fine hollow particles having shells, the glass transition temperature (Tg) of which is adjusted, the hardness of the shells and the shape of micropores on the surface of a polishing layer are controlled. Since the content of Si in the polishing layer is adjusted, it is possible to prevent the surface damage of a semiconductor substrate caused by hard additives. As a result, the polishing pad can provide a high polishing rate while minimizing the occurrence of defects such as scratches on the surface of a semiconductor substrate during the CMP process.

Abstract: In the composition according to the embodiment, the content of an unreacted diisocyanate monomer in a urethane-based prepolymer may be controlled to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.

Abstract: In the composition according to the embodiment, the composition of oligomers that constitute the chains in a urethane-based prepolymer may be adjusted to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.

Abstract: Provided is a polishing pad that comprises a plurality of first grooves that have a shape of geometric figures that share a center; and a plurality of second grooves that radially extend from the center to the outer perimeter, wherein the depth of the second grooves is equal to, or deeper than, the depth of the first grooves. It is possible for the polishing pad to rapidly discharge any debris generated during the polishing process to reduce such defects as scratches on the surface of a wafer.

Abstract: Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. According to the embodiments, the size and distribution of the plurality of pores contained in the porous polyurethane polishing pad can be adjusted. Thus, it is possible to provide a porous polyurethane polishing pad that has enhanced physical properties such as a proper level of withstand voltage, excellent polishing performance (i.e., polishing rate), and the like.

Abstract: Embodiments relate to a porous polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors and a process for preparing the same. According to the embodiments, the size and distribution of the plurality of pores contained in the porous polishing pad can be adjusted in light of the volume thereof. Thus, the plurality of pores have an apparent volume-weighted average pore diameter in a specific range, thereby providing a porous polishing pad that is excellent in such physical properties as polishing rate and the like.

Abstract: Embodiments relate to a leakage-proof polishing pad for use in a chemical mechanical planarization (CMP) process and a process for producing the same.

Abstract: Embodiments relate to a highly elastic polyester modified urethane resin and a clear coat composition containing the same, and more particularly, to a highly elastic polyester modified urethane resin having improved chipping resistance by introducing an aliphatic isocyanate and a caprolactone polyol to a polyester resin, and a clear coat composition including the polyester modified urethane resin as a main resin. For example, there is provided a polyester modified urethane resin, including polyester derived units obtained from an aliphatic polyalcohol and an aliphatic or alicyclic polyacid, caprolactone polyol derived units; and aliphatic diisocyanate derived units, as resin constituting units.

Abstract: Embodiments relate to a highly elastic polyester modified urethane resin and a clear coat composition containing the same, and more particularly, to a highly elastic polyester modified urethane resin having improved chipping resistance by introducing an aliphatic isocyanate and a caprolactone polyol to a polyester resin, and a clear coat composition including the polyester modified urethane resin as a main resin. For example, there is provided a polyester modified urethane resin, including polyester derived units obtained from an aliphatic polyalcohol and an aliphatic or alicyclic polyacid, caprolactone polyol derived units; and aliphatic diisocyanate derived units, as resin constituting units.