Abstract: An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.

Abstract: A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Abstract: Disclosed is a secondary battery including a plurality of electrode assemblies. The secondary battery includes a first electrode assembly including a first cathode, a first separator and a first anode, and a second electrode assembly including a second cathode, a second separator and a second anode, wherein, When an electrode plate area of the second electrode assembly is smaller than that of the first electrode assembly, a cross-sectional thickness of the second electrode assembly is larger than that of the first electrode assembly.

Abstract: A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

Abstract: A method of manufacturing a power supply unit (PSU) is provided. The method includes providing at least one PSU supplying a dimming signal to at least one light source, performing a first test for electrical characteristics of the at least one PSU, detecting light emitted from the at least one light source, measuring a flicker of the at least one light source, and performing a second test for a state of the at least one PSU based on a flicker measurement result, and packing a PSU determined to be in a normal state among the at least one PSU, as a result of the first test and the second test.

Abstract: An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.

Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first electrode disposed below the light emitting structure, the first electrode being electrically connected to the first conductivity type semiconductor layer, a second electrode within the light emitting structure, the second electrode being electrically connected to the second conductivity type semiconductor layer, an insulating part electrically separating the second electrode from the first conductivity type semiconductor layer, the active layer, and the first electrode, a first pad electrode electrically connected to the first electrode, and a second pad electrode electrically connected to the second electrode, the second pad electrode being exposed to a top surface of the light emitting structure.

Abstract: A test apparatus for a power supply unit is provided, which includes a body unit configured to define a space to receive a light emitting diode (LED) and to provide a test environment to test a supply state of power applied to the LED; and a test unit mounted in the body unit to face the LED and configured to detect flicker of the LED occurring when a power supply is abnormal. According to the foregoing structure, power supply with respect to the LED may be regularly detected and analyzed, thereby increasing quality of power supply with respect to the LED.

Abstract: A server for storing an indoor map, the server comprising: a first storage area configured to store network data, the network data including node data and link data that constitute a building; and a second storage area configured to store floor data, the floor data including space data representing logical division space for each floor and geometry data representing a physical separation space.

Abstract: Systems and methods for enabling a group of user equipments located in an emergency area to cooperatively transmit an emergency (SOS) message to a cellular network and to cooperatively receive an SOS message (or response) from the cellular network are provided. Embodiments further provide a scheme for enabling dedicated receivers, and/or user equipments that are attached to the cellular network to serve as relay stations for SOS messages, thereby extending the coverage of the cellular network to the emergency area.

Abstract: An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.

Abstract: Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer.

Abstract: A method of manufacturing a power supply unit (PSU) is provided. The method includes providing at least one PSU supplying a dimming signal to at least one light source, performing a first test for electrical characteristics of the at least one PSU, detecting light emitted from the at least one light source, measuring a flicker of the at least one light source, and performing a second test for a state of the at least one PSU based on a flicker measurement result, and packing a PSU determined to be in a normal state among the at least one PSU, as a result of the first test and the second test.

Abstract: A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes.

Abstract: A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a select transistor, memory cells connected in serial and dummy memory cells disposed between the select transistor and the memory cells. A higher voltage is applied to a corresponding dummy memory cell as space between the corresponding dummy memory cell and the select to transistor is reduced in an erase operation.

Abstract: A semiconductor light emitting element includes a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A first electrode structure includes a conductive via connected to the first conductivity type semiconductor layer. A second electrode structure is connected to the second conductivity type semiconductor layer. An insulating part having an open region exposes part of the first and second electrode structures while covering the first and second electrode structures. First and second pad electrodes are formed on the first and second electrode structures exposed by the open region and are connected to the first and second electrode structures.

Abstract: A method of manufacturing a power supply unit (PSU) is provided. The method includes providing at least one PSU supplying a dimming signal to at least one light source, performing a first test for electrical characteristics of the at least one PSU, detecting light emitted from the at least one light source, measuring a flicker of the at least one light source, and performing a second test for a state of the at least one PSU based on a flicker measurement result, and packing a PSU determined to be in a normal state among the at least one PSU, as a result of the first test and the second test.

Abstract: A method of erasing a semiconductor memory device comprises grouping a plurality of word lines of each memory block into at least two groups based on intensity of disturbance between neighboring word lines; performing an erase operation by applying a ground voltage to all word lines of a selected memory block and by applying an erase voltage to a well of the selected memory block; and first increasing the ground voltage of one group of the groups to a positive voltage during the erase operation.

Abstract: A power supply apparatus, an apparatus, and a method of supplying power are provided. The power supply apparatus including a high voltage generating unit, which generates one or more output voltages by using an input voltage, and which is implemented as a chip. The one or more output terminals are on a same circuit board as the high voltage generating unit, to output the generated one or more output voltages. The chip includes a transforming unit to transform the input voltage into one or more transformed voltages that are different from one another, and a rectifying unit to rectify the transformed voltages into rectified voltages, and to determine the rectified voltages as the generated one or more output voltages.

Abstract: There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.