Abstract: A method and an apparatus for acquiring an image of a subject are provided. The method for acquiring the image of the subject includes acquiring a first preliminary image and a second preliminary image of the subject through an image sensor operatively coupled to an electronic device, determining a candidate emission time relating to an acquisition of an output image of the subject, based on a difference between state information of at least part of the first preliminary image and state information of at least part of the second preliminary image, comparing the candidate emission time with a time corresponding to a synchronization period where a plurality of lines of the image sensor simultaneously acquires the output image, and acquiring the output image of the subject based on the comparison.

Abstract: Provided are a nanopore device with resolution improved by graphene nanopores, and a method of manufacturing the same. The nanopore device includes: a first insulating layer; a graphene layer disposed on the first insulating layer and having a nanopore formed at a center portion of the graphene layer; and first and second electrode layers disposed respectively at both sides of the nanopore on a top surface of the graphene layer, wherein a center region of the first insulating layer is removed such that the center portion of the graphene layer is exposed to the outside.

Abstract: A method of controlling a mobile terminal, and which includes displaying a touch keypad on a touch screen of the mobile terminal, the touch keypad including character input regions, at least one specific character input region including a first character symbol and a second character symbol; displaying an output window above the touch keypad, the output window displaying character symbols touched on the character input regions; receiving a touch selection signal indicating a touch selection of the specific character input region; as long as the received touch selection signal is received, displaying the keypad and a new character input region with the second character symbol being displayed larger than the second character symbol displayed in the specific character input region; and displaying the second character symbol in the output window when the touch selection is released from the new character input region.

Abstract: The method of manufacturing a graphene device includes forming an insulating material layer on a substrate, forming first and second metal pads on the insulating material layer spaced apart from each other, forming a graphene layer having a portion defined as an active area between the first and second metal pads on the insulating material layer, forming third and fourth metal pads on the graphene layer spaced apart from each other with the active area therebetween, the third and fourth metal pads extending above the first metal pad and the second metal pad, respectively, forming a first protection layer to cover all the first and second metal pads, the graphene layer, and the third and fourth metal pads, and etching an entire surface of the first protection layer until only a residual layer made of a material for forming the first protection layer remains on the active area.

Abstract: A device, computer program product and method of inputting a character in a touch screen device, in which a touch area is partitioned into a plurality of array positions, and one or more letters are assigned to each of the partitioned array positions. The method comprises the steps of: partitioning a touch area of the touch panel into a plurality of array positions and assigning one or more characters to each of the partitioned array positions; sensing an expansion event of selecting one among the array positions; dividing the touch area into a plurality of selection positions and assigning the characters assigned to the array position selected by the expansion event to the respective selection positions; sensing a selection event of selecting one among the selection positions; and recognizing the character assigned to the selection position selected by the selection event as an input character.

Abstract: Graphene transferring methods, a device manufacturing method using the same, and substrate structures including graphene, include forming a catalyst layer on a first substrate, forming a graphene layer on the catalyst layer, forming a protection metal layer on the graphene layer, attaching a supporter to the protection metal layer, separating the first substrate from the catalyst layer such that the protection metal layer, the graphene layer, and the catalyst layer remain on the supporter, removing the catalyst layer from the supporter, and transferring the protection metal layer and the graphene layer from the supporter to a second substrate.

Abstract: A graphene device manufacturing apparatus includes an electrode, a graphene structure including a metal catalyst layer formed on a substrate, a protection layer, and a graphene layer between the protection layer and the metal catalyst layer, a power unit configured to apply a voltage between the electrode and the metal catalyst layer, and an electrolyte in which the graphene structure is at least partially submerged.

Abstract: The present invention relates to a method of manufacturing soil reinforced by microbe-based bio-binders and soil produced by the method. The bio-binders are not harmful to humans, do not cause environmental pollution and secure sufficiently the soil strength and resistance against wind. According to the method, the soil is prepared by binding sand whose major components are silica and alumina, ureolytic microbes, urea, calcium ion, and polymer fibers, and the content of polymer fibers in sand ranges from 0.05 wt % to 5 wt %. In addition, it is preferable that the microbes provide CaCO3 at a rate at 1˜7×10?9 g CaCO3 ppt cell?1 hr?1 under optimum conditions.

Abstract: A method of fabricating a gallium nitride (GaN) thin layer, by which a high-quality GaN layer may be grown on a large-area substrate using an electrode layer suspended above a substrate, a GaN film structure fabricated using the method, and a semiconductor device including the GaN film structure. The method includes forming a sacrificial layer on a substrate, forming a first buffer layer on the sacrificial layer, forming an electrode layer on the first buffer layer, forming a second buffer layer on the electrode layer, partially etching the sacrificial layer to form at least two support members configured to support the first buffer layer and form at least one air cavity between the substrate and the first buffer layer, and forming a GaN thin layer on the second buffer layer.

Abstract: A graphene electronic device includes: a first conductive layer and a semiconductor layer on a first region of an intermediate layer; a second conductive layer on a second region of the intermediate layer; a graphene layer on the intermediate layer, the semiconductor layer, and the second conductive layer; and a first gate structure and a second gate structure on the graphene layer.

Abstract: A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer.

Abstract: A portable terminal is provided and the portable terminal includes a terminal body, a projector operatively connected to the terminal body, and a door movably mounted to the terminal body, the door being moveable between a first position covering the projector and a second position exposing the projector.

Abstract: A nanogap device includes a first insulation layer having a nanopore formed therein, a first nanogap electrode which may be formed on the first insulation layer and may be divided into two parts with a nanogap interposed between the two parts, the nanogap facing the nanopore, a second insulation layer formed on the first nanogap electrode, a first graphene layer formed on the second insulation layer, a first semiconductor layer formed on the first graphene layer, a first drain electrode formed on the first semiconductor layer, and a first source electrode formed on the first graphene layer such as to be apart from the first semiconductor layer.

Abstract: A nanogap device which may include a first insulation layer having a nanopore formed therein, a first channel layer which may be on the first insulation layer, a first source electrode and a first drain electrode which may be respectively in contact with both ends of the first channel layer, a second insulation layer which may cover the first channel layer, the first source electrode, and the first drain electrode, and a first nanogap electrode which may be on the second insulation layer and may be divided into two parts with a nanogap, which faces the nanopore, interposed between the two parts.

Abstract: Graphene semiconductor device, a method of manufacturing a graphene semiconductor device, an organic light emitting display and a memory, include forming a multilayered member including a sacrificial substrate, a sacrificial layer, and a semiconductor layer deposited in sequence, forming a transfer substrate on the semiconductor layer, forming a first laminate including the transfer substrate and the semiconductor layer by removing the sacrificial layer to separate the sacrificial substrate from the semiconductor layer, forming a second laminate by forming a graphene layer on a base substrate, combining the first laminate and the second laminate such that the semiconductor layer contacts the graphene layer, and removing the transfer substrate.

Abstract: The method of manufacturing a graphene device includes forming an insulating material layer on a substrate, forming first and second metal pads on the insulating material layer spaced apart from each other, forming a graphene layer having a portion defined as an active area between the first and second metal pads on the insulating material layer, forming third and fourth metal pads on the graphene layer spaced apart from each other with the active area therebetween, the third and fourth metal pads extending above the first metal pad and the second metal pad, respectively, forming a first protection layer to cover all the first and second metal pads, the graphene layer, and the third and fourth metal pads, and etching an entire surface of the first protection layer until only a residual layer made of a material for forming the first protection layer remains on the active area.

Abstract: The present invention relates to an environmental load assessment system, which is capable of efficiently and simply assessing an environmental load of a building in all stages (e.g., a planning stage, a design stage, a construction stage, and a use stage after construction) in doing executing a business by subdividing an assessment process, such as simple assessment in the design stage, detailed assessment in the start stage, and site assessment in the construction stage according to the progress of a construction project.

Abstract: A graphene device manufacturing apparatus includes an electrode, a graphene structure including a metal catalyst layer formed on a substrate, a protection layer, and a graphene layer between the protection layer and the metal catalyst layer, a power unit configured to apply a voltage between the electrode and the metal catalyst layer, and an electrolyte in which the graphene structure is at least partially submerged.

Abstract: A terahertz radiation source includes: a cathode configured to emit an electron beam, an anode configured to focus the electron beam emitted from the cathode; a collector facing the cathode and configured to collect the emitted electron beam focused by the anode; an oscillating circuit positioned between the anode and the collector and configured to convert energy of a passing electron beam into electromagnetic wave energy; and an output unit connected to the oscillating circuit and configured to externally emit the electromagnetic wave energy.

Abstract: Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene.