Abstract: The present invention relates to a battery pack including: a plurality of battery modules each including a plurality of battery cells, wherein at least one of the battery modules has a layer structure with the remaining battery modules based on the ground; a battery management system (BMS) mounted adjacent to the battery modules and monitoring and controlling operation of the battery modules; a battery disconnect unit (BDU) mounted adjacent to the battery modules and controlling electrical connection of the battery modules; a base plate having a structure in which the battery modules are mounted on an upper surface thereof and a lower end part thereof is fixed to an external device; and a pack cover surrounding the battery modules and coupled to an outer periphery of the base plate.

Abstract: The present invention relates to a battery pack including: a plurality of battery modules each including a plurality of battery cells, wherein at least one of the battery modules has a layer structure with the remaining battery modules based on the ground; a battery management system (BMS) mounted adjacent to the battery modules and monitoring and controlling operation of the battery modules; a battery disconnect unit (BDU) mounted adjacent to the battery modules and controlling electrical connection of the battery modules; a base plate having a structure in which the battery modules are mounted on an upper surface thereof and a lower end part thereof is fixed to an external device; and a pack cover surrounding the battery modules and coupled to an outer periphery of the base plate.

Abstract: A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type on a substrate, an active layer on the first semiconductor layer, a second semiconductor layer of a second conductivity type on the active layer, the second semiconductor layer being doped with magnesium (Mg), and having an upper surface substantially parallel to an upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate, and a third semiconductor layer of the second conductivity type on the second semiconductor layer, the third semiconductor layer being doped with magnesium (Mg) at a concentration different from that of the second semiconductor layer, and having an upper surface substantially parallel to the upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate.

Abstract: A light emitting device package includes a cell array having a first surface and a second surface located opposite to the first surface and including, on a portion of a horizontal extension line of the first surface, semiconductor light emitting units each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially located on a layer surface including a sidewall of the first conductivity type semiconductor layer; wavelength converting units corresponding respectively to the semiconductor light emitting units and each arranged corresponding to the first conductivity type semiconductor layer; a barrier structure arranged between the wavelength converting units corresponding to the cell array; and switching units arranged in the barrier structure and electrically connected to the semiconductor light emitting units.

Abstract: A light-emitting device package is provided. The light-emitting device package includes: a substrate having a first surface and a second surface, and having a first opening and a second opening spaced apart from each other; a light-emitting structure disposed on the first surface of the substrate and vertically overlapping the first opening; and an image sensor including a photoelectric conversion region, the photoelectric conversion region being disposed in the substrate and vertically overlapping the second opening. Light from the light-emitting structure is emitted toward the second surface of the substrate through the first opening.

Abstract: An embodiment of the present inventive concept provides an ultraviolet light emitting device comprising: a substrate having a concave or convex edge pattern disposed along an edge of an upper surface thereof; a semiconductor laminate disposed on the substrate and including first and second conductivity-type AlGaN semiconductor layers and an active layer disposed between the first and second conductivity-type AlGaN semiconductor layers and having an AlGaN semiconductor; a plurality of uneven portions extending from the edge pattern along the side surface of the semiconductor laminate in a stacking direction; and first and second electrodes connected to the first and second conductivity-type AlGaN semiconductor layers, respectively.

Abstract: A method of manufacturing a semiconductor light emitting device may include: forming a buffer layer on a substrate; forming a protective layer on the buffer layer; performing heat treatment on a stacked structure of the substrate, the buffer layer, and the protective layer; removing the protective layer; and forming a light emitting structure on the buffer layer.

Abstract: An ultraviolet light emitting device including a first conductivity-type AlGaN semiconductor layer; an active layer disposed on the first conductivity-type AlGaN semiconductor layer and having an AlGaN semiconductor; a second conductivity-type AlGaN semiconductor layer disposed on the active layer and having an upper surface divided into a first region and a second region; second conductivity-type nitride patterns disposed on the first region of the second conductivity-type AlGaN semiconductor layer and having an energy band gap that is smaller than an energy band gap of the second conductivity-type AlGaN semiconductor layer; a transparent electrode layer covering the second conductivity-type nitride patterns and the second region of the second conductivity-type AlGaN semiconductor layer; a light-transmissive dielectric layer disposed on the transparent electrode layer between the second conductivity-type nitride patterns; and a metal electrode disposed on the transparent electrode layer overlying the second

Abstract: A semiconductor light emitting device includes a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of holes through the second conductive semiconductor layer and the active layer, a trench extending along an edge of the light emitting stack, the trench extending through the second conductive semiconductor layer and the active layer, and a reflective metal layer within the plurality of holes and within the trench.

Abstract: A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.

Abstract: An ultraviolet light emitting device including a first conductivity-type AlGaN semiconductor layer; an active layer disposed on the first conductivity-type AlGaN semiconductor layer and having an AlGaN semiconductor; a second conductivity-type AlGaN semiconductor layer disposed on the active layer and having an upper surface divided into a first region and a second region; second conductivity-type nitride patterns disposed on the first region of the second conductivity-type AlGaN semiconductor layer and having an energy band gap that is smaller than an energy band gap of the second conductivity-type AlGaN semiconductor layer; a transparent electrode layer covering the second conductivity-type nitride patterns and the second region of the second conductivity-type AlGaN semiconductor layer; a light-transmissive dielectric layer disposed on the transparent electrode layer between the second conductivity-type nitride patterns; and a metal electrode disposed on the transparent electrode layer overlying the second

Abstract: An embodiment of the present inventive concept provides an ultraviolet light emitting device comprising: a substrate having a concave or convex edge pattern disposed along an edge of an upper surface thereof; a semiconductor laminate disposed on the substrate and including first and second conductivity-type AlGaN semiconductor layers and an active layer disposed between the first and second conductivity-type AlGaN semiconductor layers and having an AlGaN semiconductor; a plurality of uneven portions extending from the edge pattern along the side surface of the semiconductor laminate in a stacking direction; and first and second electrodes connected to the first and second conductivity-type AlGaN semiconductor layers, respectively.

Abstract: The present invention provides a battery module assembly including: a module array body including two or more unit modules, each including a plurality of battery cells, the unit modules being arranged while sides thereof are closely attached to each other; and a combination-type module housing that includes a first space set by combining a plurality of plate members, and a second space set in the first space while a fixing bracket is additionally combined to one of the plurality of plate members.

Abstract: An ultraviolet light emitting device package, comprising: a growth substrate having a first surface, a second surface corresponding thereto, and a light emitting window penetrating through the first surface and the second surface, a reflective layer disposed on an internal wall of the light emitting window, a light transmissive cover disposed on the first surface and covering the light emitting window, a light emitting structure disposed on the second surface to cover the light emitting window and including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and a first electrode and a second electrode, connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively.

Abstract: A visco-poroelastic elastomer-based capacitor type tactile sensor includes a first electrode, an active layer formed on a top surface of the first electrode and made of a visco-poroelastic elastomer, a second electrode formed on a top surface of the active layer, and a controller configured to provide an electric field generated orthogonal to an extension direction of the first electrode and the second electrode between the first electrode and the second electrode. In proportion to an external pressure applied to the tactile sensor, a concentration of effective ions present at the interfaces between the active layer and the first and second electrodes is increased.

Abstract: The present invention relates to a battery pack including: a plurality of battery modules each including a plurality of battery cells, wherein at least one of the battery modules has a layer structure with the remaining battery modules based on the ground; a battery management system (BMS) mounted adjacent to the battery modules and monitoring and controlling operation of the battery modules; a battery disconnect unit (BDU) mounted adjacent to the battery modules and controlling electrical connection of the battery modules; a base plate having a structure in which the battery modules are mounted on an upper surface thereof and a lower end part thereof is fixed to an external device; and a pack cover surrounding the battery modules and coupled to an outer periphery of the base plate.

Abstract: The present disclosure in some embodiments relates to a method and an apparatus for monitoring a marine traffic, which learn navigation data of a plurality of ships sailing over an area to be monitored to calculate standard navigation data models for respective navigation sections, and monitor the state of navigation of the ship to be monitored based on the calculated standard navigation data models, and thereby provide an accurate and objective marine traffic monitoring.

Abstract: A method of manufacturing a semiconductor substrate may include: forming a buffer layer on a growth substrate; forming a plurality of openings in the buffer layer, the plurality of openings penetrating through the buffer layer and being spaced apart from one another; forming a plurality of cavities on the growth substrate, the plurality of cavities being aligned to respectively correspond to the plurality of openings; growing a semiconductor layer on the buffer layer, the growing the semiconductor layer including filling the plurality of openings with the semiconductor layer; and separating the buffer layer and the semiconductor layer from the growth substrate, wherein a diameter of each of the plurality of openings at a boundary between the growth substrate and the buffer layer is smaller than a diameter of each of the plurality of cavities at the boundary.

Abstract: Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7?k?13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0.

Abstract: A method of manufacturing a semiconductor substrate may include: forming a buffer layer on a growth substrate; forming a plurality of openings in the buffer layer, the plurality of openings penetrating through the buffer layer and being spaced apart from one another; forming a plurality of cavities on the growth substrate, the plurality of cavities being aligned to respectively correspond to the plurality of openings; growing a semiconductor layer on the buffer layer, the growing the semiconductor layer including filling the plurality of openings with the semiconductor layer; and separating the buffer layer and the semiconductor layer from the growth substrate, wherein a diameter of each of the plurality of openings at a boundary between the growth substrate and the buffer layer is smaller than a diameter of each of the plurality of cavities at the boundary.