Abstract: Disclosed is an internal antenna that provides impedance matching for multiple bands. The antenna includes an impedance matching part, which in turn includes a first conductive element electrically coupled to a feeding point and a second conductive element electrically coupled to a ground, and at least one radiator electrically coupled to the first conductive element, where the first conductive element and the second conductive element of the impedance matching part are separated by a particular distance to perform coupling matching and are electrically coupled at a pre-designated position. Certain aspects of the present invention can be utilized to provide wide band characteristics in designing for multi-band applications, even for high-frequency bands.

Abstract: Provided is a terminal including an antenna apparatus capable of securing a wideband characteristic in a multiple input multiple output (MIMO) antenna system. The antenna apparatus may include a band pass filter for blocking or reducing interference from another antenna apparatus. The antenna apparatus may maintain a resonant frequency band to be wide by forming a sub resonance using a plurality of uneven shapes.

Abstract: A nanostructured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures each including a first type semiconductor nano-core grown in a three-dimensional (3D) shape on the first type semiconductor layer, an active layer formed to surround a surface of the first type semiconductor nano-core, and a second type semiconductor layer formed to surround a surface of the active layer and including indium (In); and at least one flat structure layer including a flat-active layer and a flat-second type semiconductor layer that are sequentially formed on the first type semiconductor layer parallel to the first type semiconductor layer.

Abstract: A nano-structured light-emitting device (LED) includes: a plurality of nanostructures on a first type semiconductor layer. Each of the plurality of nanostructures includes: a first type semiconductor nanocore on a portion of the first type semiconductor layer; a current spreading layer formed to cover a surface of the first type semiconductor nanocore and formed of an AlxGa1-xN(0<x<1)/GaN superlattice structure; an active layer on the current spreading layer (or on the first type semiconductor nanocore if the current spreading layer is embedded in the first type semiconductor nanocore); and a second type semiconductor layer on the active layer.

Abstract: A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

Abstract: A universal serial bus (USB) type wireless data card is used for wireless communication in a multi-in/multi-out (MIMO) environment. The USB type wireless data card includes a card body. A USB connector is installed at a first end of the card body and is connectable to a USB port of an electronic device. An antenna part includes a first antenna and a second antenna rotatable with respect to the card body to be spaced apart from the electronic device.

Abstract: Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

Abstract: Disclosed is an internal antenna that provides impedance matching for multiple bands. The antenna includes an impedance matching part, which in turn includes a first conductive element electrically coupled to a feeding point and a second conductive element electrically coupled to a ground, and at least one radiator electrically coupled to the first conductive element, where the first conductive element and the second conductive element of the impedance matching part are separated by a particular distance to perform coupling matching and are electrically coupled at a pre-designated position. Certain aspects of the present invention can be utilized to provide wide band characteristics in designing for multi-band applications, even for high-frequency bands.

Abstract: A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

Abstract: A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

Abstract: A printed circuit board and a method of manufacturing the printed circuit board are disclosed. The printed circuit board can include: an optical waveguide, in one side of which a circuit pattern and a pad are buried; an insulation layer stacked over one side of the optical waveguide; a first insulating material stacked over the insulation layer; a first electrical wiring layer stacked over the first insulating material; a second insulating material stacked over the other side of the optical waveguide; a second electrical wiring layer stacked over the second insulating material; and a via penetrating the optical waveguide. Certain embodiments of the invention enable the efficient transmission of optical and electrical signals, reduce loss in the optical signals transferred to the photoelectric converters, and allow more efficient designs for the wiring in the board.

Abstract: Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.

Abstract: Provided are a light-emitting device including a plurality of nanorods each of which comprises an active layer formed between an n-type region and a p-type region, and a method of manufacturing the same. The light-emitting device comprises: a substrate; a first electrode layer formed on the substrate; a basal layer formed on the first electrode layer; a plurality of nanorods formed vertically on the basal layer, each of which comprises a bottom part doped with first type, a top part doped with second type opposite to the first type, and an active layer between the bottom part and the top part, an insulating region formed between the nanorods, and a second electrode layer formed on the nanorods and the insulating region.

Abstract: A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.

Abstract: A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer.

Abstract: A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.

Abstract: Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein the plurality of nano patterns are formed inside the semiconductor layer; and an active layer formed on the semiconductor layer. The optical output efficiency is increased and inner defects of the semiconductor light emitting device are reduced.