Abstract: A steering wheel hands-on/off detection device includes: an imaging part provided in a vehicle and configured to capture a motion of a driver; a dynamic sensor configured to measure a dynamics motion of the vehicle; an image processor configured to process an image obtained from the imaging part; and a vehicle safety controller. The image processor includes a driver monitoring part configured to derive a behavior type of the driver from the image and a keypoint extraction part configured to extract keypoints of the driver. An optimal torque and an optimal contact force are applied to the keypoints of the driver so that a driver dynamics model optimally controlled to follow a position of the driver is applied. The vehicle safety controller configured to determine steering wheel hands-on/off on the basis of a magnitude of a force applied to the steering wheel, which is estimated from the driver dynamics model.

Abstract: A vehicle for protecting an occupant includes: a plurality of safe devices provided in the vehicle for protecting the occupant; first sensors configured to obtain information on a seat or the occupant within the vehicle; second sensors configured to detect a collision with other objects; and a processor which is operatively connected to the safe devices, the first sensors, and the second sensors. The processor is configured to obtain state information on at least one of the seat or the occupant based on the information obtained from the first sensors, to determine at least one safe device to be operated among the plurality of safe devices based on the state information on the at least one of the seat or the occupant, and to operate the determined at least one safe device when at least one of the second sensors detects a collision satisfying a predetermined condition.

Abstract: To robustly estimate three-dimensional behaviors of an occupant by fusing, through a particle filter, information obtained through vehicle indoor cameras and through vehicle internal information sensors, an occupant behavior estimation system includes: a camera configured to obtain images of the at least one occupant within the vehicle; sensors configured to obtain information on the vehicle; an image processing device configured to process images obtained from the camera and to obtain key point information of the at least one occupant and object tracking information that is provided by tracking the at least one occupant; and a vehicle safety controller configured to estimate the behaviors of the occupant by using a particle filter based on the information on the vehicle obtained through the sensors, the key point information and the object tracking information, which are obtained from the image processing device.

Abstract: The present invention relates to a method of directly detecting, using a mass-spectrometry method, whether a microorganism contained in a sample is resistant to antibiotics, and a kit for detection used therewith. More particularly, the present invention relates to a method and kit for directly detecting an antibiotic hydrolase secreted by a microorganism resistant to antibiotics, thereby directly determining whether the microorganism is resistant to antibiotics. According to the present invention, it is possible to very simply and immediately confirm whether a specific strain is resistant to antibiotics in the field. In particular, a complicated pretreatment process such as proteolysis is not performed, and a complicated identification process of calibrating and then combining the obtained results is not performed.

Abstract: The present invention relates to a method of directly detecting, using a mass-spectrometry method, whether a microorganism contained in a sample is resistant to antibiotics, and a kit for detection used therewith. More particularly, the present invention relates to a method and kit for directly detecting an antibiotic hydrolase secreted by a microorganism resistant to antibiotics, thereby directly determining whether the microorganism is resistant to antibiotics. According to the present invention, it is possible to very simply and immediately confirm whether a specific strain is resistant to antibiotics in the field. In particular, a complicated pretreatment process such as proteolysis is not performed, and a complicated identification process of calibrating and then combining the obtained results is not performed.

Abstract: Provided are a data transmission system, an encoding apparatus, and a decoding method. The encoding apparatus includes an encoding unit configured to use an encoding matrix to encode original packets sequentially generated from a codec to generate an encoded packet in units of a generation. The encoding unit is configured to use information provided from the codec to dynamically determine a generation boundary of the original packets to encode the original packets. The encoding unit is configured to dynamically a generation size according to a generation time of the original packets. According to embodiments of the inventive concept, it is possible to use information provided from a VoIP codec to dynamically determine the boundary or size of a generation to decrease a standby time upon encoding/decoding, and may recover the loss of packets that may occur in a wired/wireless network.

Abstract: Provided are a data transmission system, an encoding apparatus, and a decoding method. The encoding apparatus includes an encoding unit configured to use an encoding matrix to encode original packets sequentially generated from a codec to generate an encoded packet in units of a generation. The encoding unit is configured to use information provided from the codec to dynamically determine a generation boundary of the original packets to encode the original packets. The encoding unit is configured to dynamically a generation size according to a generation time of the original packets. According to embodiments of the inventive concept, it is possible to use information provided from a VoIP codec to dynamically determine the boundary or size of a generation to decrease a standby time upon encoding/decoding, and may recover the loss of packets that may occur in a wired/wireless network.

Abstract: Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.

Abstract: A slurry composition includes an abrasive agent, an oxidizing agent, and a first adsorption inhibitor including a polyethylene oxide copolymer. A method of manufacturing a phase change memory device may include providing a substrate including an interlayer insulating film having a trench and a phase change material layer on the interlayer insulating film filling the trench, and performing chemical mechanical polishing on the phase change material layer using the slurry composition to form a phase change material pattern layer.

Abstract: A nonvolatile memory cell includes a substrate and a phase changeable pattern configured to retain a state of the memory cell, on the substrate. An electrically insulating layer is provided, which contains a first electrode therein in contact with the phase changeable pattern. The first electrode has at least one of an L-shape when viewed in cross section and an arcuate shape when viewed from a plan perspective. A lower portion of the first electrode may be ring-shaped when viewed from the plan perspective. The lower portion of the first electrode may also have a U-shaped cross-section. An upper portion of the first electrode may also have an arcuate shape that spans more than 180° of a circular arc.

Abstract: In an etching method, a thin layer is formed on a first surface of a first substrate doped with first impurities having a first doping concentration. The thin layer is doped with second impurities having a second doping concentration lower than the first doping concentration. A second substrate is formed on the thin layer. A second surface of the first substrate is polished. The polished first substrate is cleaned using a cleaning solution including ammonia and deionized water. The cleaned first substrate is etched to expose the thin layer.

Abstract: A method of fabricating a phase change memory device includes the use of first, second and third polishing processes. The first polishing process forms a first contact portion using a first sacrificial layer and the second polishing process forms a phase change material pattern using a second sacrificial layer. After removing the first and second sacrificial layers to expose resultant protruding structures of the first contact portion and the phase change material pattern, a third polishing process is used to polish the resultant protruding structures using an insulation layer as a polishing stopper layer.

Abstract: A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an opening and is formed on the lower electrode and the substrate. The opening exposes the lower electrode and has a width gradually decreasing downward. The phase changeable material layer fills the opening and partially covers an upper face of the insulating interlayer structure. The upper electrode is formed on the phase changeable material layer.

Abstract: A chemical-mechanical polishing (CMP) method of polishing a phase-change material and a method of fabricating a phase-change memory, the CMP method including forming the phase-change material on an activation surface of a semiconductor wafer, and performing a CMP process on the phase-change material using a polishing pad, wherein the performing the CMP process includes reducing a change in the composition of the phase-change material by adjusting, within a predetermined range, a temperature of a region where the semiconductor wafer and the polishing pad contact each other.

Abstract: A method of fabricating a phase change memory device includes the use of first, second and third polishing processes. The first polishing process forms a first contact portion using a first sacrificial layer and the second polishing process forms a phase change material pattern using a second sacrificial layer. After removing the first and second sacrificial layers to expose resultant protruding structures of the first contact portion and the phase change material pattern, a third polishing process is used to polish the resultant protruding structures using an insulation layer as a polishing stopper layer.

Abstract: A contact structure that includes a first pattern formed on a substrate, wherein the first pattern has a recessed region in an upper surface thereof, a planarized buffer pattern formed on the first pattern, and a conductive pattern formed on the planarized buffer pattern.

Abstract: In an etching method, a thin layer is formed on a first surface of a first substrate doped with first impurities having a first doping concentration. The thin layer is doped with second impurities having a second doping concentration lower than the first doping concentration. A second substrate is formed on the thin layer. A second surface of the first substrate is polished. The polished first substrate is cleaned using a cleaning solution including ammonia and deionized water. The cleaned first substrate is etched to expose the thin layer.

Abstract: A nonvolatile memory cell includes a substrate and a phase changeable pattern configured to retain a state of the memory cell, on the substrate. An electrically insulating layer is provided, which contains a first electrode therein in contact with the phase changeable pattern. The first electrode has at least one of an L-shape when viewed in cross section and an arcuate shape when viewed from a plan perspective. A lower portion of the first electrode may be ring-shaped when viewed from the plan perspective. The lower portion of the first electrode may also have a U-shaped cross-section. An upper portion of the first electrode may also have an arcuate shape that spans more than 180° of a circular arc.

Abstract: Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.

Abstract: Methods of fabricating phase change memory elements include forming an insulating layer on a semiconductor substrate, forming a through hole penetrating the insulating layer, forming a lower electrode in the through hole and forming a recess having a sidewall comprising a portion of the insulating layer by selectively etching a surface of the lower electrode relative to the insulating layer. A phase change memory layer is formed on the lower electrode. The phase change memory layer has a portion confined by the recess and surrounded by the insulating layer. An upper electrode is formed on the phase change memory layer. Phase change memory elements are also provided.