Abstract: Provided is a method of visualizing a plurality of nodes respectively including a plurality of variable values for a data object. The method includes: allocating a predetermined upper limit value and a predetermined lower limit value for each of a plurality of variables to vertices of a three-dimensional polygon facing each other; respectively determining partial positions related to the variables for the nodes based on the upper limit value and the lower limit value for each of the variables, a maximum variable value and a minimum variable value for each variable from among variable values of the nodes, and the variable values of the nodes; respectively determining final positions of the nodes in the three-dimensional polygon based on the determined partial positions; and arranging the nodes in the three-dimensional polygon according to the determined final positions.

Abstract: There are provided a high voltage switch circuit and a semiconductor memory device including the same. A high voltage switch circuit may include a switching circuit including a first depletion transistor and a first high voltage transistor, which are coupled in series between an input terminal and an output terminal, and a control signal generator for applying, to the first depletion transistor, a control signal having the same potential level as an input voltage applied to the input terminal, in response to a first enable signal and a second enable signal.

Abstract: A condensed cyclic compound represented by Formula 1: Ar1-(L1)a1-B-(L2)a2-Ar2??Formula 1 wherein, in Formula 1, groups and variables are the same as described in the specification.

Abstract: There are provided a high voltage switch circuit and a semiconductor memory device including the same. A high voltage switch circuit may include a switching circuit including a first depletion transistor and a first high voltage transistor, which are coupled in series between an input terminal and an output terminal, and a control signal generator for applying, to the first depletion transistor, a control signal having the same potential level as an input voltage applied to the input terminal, in response to a first enable signal and a second enable signal.

Abstract: Provided herein are a power-on reset circuit and a semiconductor memory device including the same. The power-on reset circuit may include: a voltage dividing circuit suitable for dividing an external power supply voltage to output a reference voltage, an output node control circuit suitable for controlling a potential level of an output node to an external power supply voltage level or a ground power supply voltage level in response to the reference voltage, and a buffer circuit suitable for buffering the potential level of the output node to output a power-on reset signal. In the voltage dividing circuit, a potential level of the reference voltage in a power up period is different from a potential level of the reference voltage in a power down period.

Abstract: There are provided a high voltage switch circuit and a semiconductor memory device including the same. A high voltage switch circuit may include a switching circuit including a first depletion transistor and a first high voltage transistor, which are coupled in series between an input terminal and an output terminal, and a control signal generator for applying, to the first depletion transistor, a control signal having the same potential level as an input voltage applied to the input terminal, in response to a first enable signal and a second enable signal.

Abstract: There are provided a high voltage switch circuit and a semiconductor memory device including the same. A high voltage switch circuit may include a switching circuit including a first depletion transistor and a first high voltage transistor, which are coupled in series between an input terminal and an output terminal, and a control signal generator for applying, to the first depletion transistor, a control signal having the same potential level as an input voltage applied to the input terminal, in response to a first enable signal and a second enable signal.

Abstract: There are provided a high voltage switch circuit and a semiconductor memory device including the same. A high voltage switch circuit may include a switching circuit including a first depletion transistor and a first high voltage transistor, which are coupled in series between an input terminal and an output terminal, and a control signal generator for applying, to the first depletion transistor, a control signal having the same potential level as an input voltage applied to the input terminal, in response to a first enable signal and a second enable signal.

Abstract: A method for operating a data storage device including a plurality of memory regions. The method includes performing a read operation for a first memory region, increasing a read count based on read sequences of the first memory region and a second memory region which has been read before the read operation for the first memory region, and performing a management operation for the plurality of memory regions based on the read count.

Abstract: A flexible organic light emitting display and a method of fabricating the same are disclosed in which flexible organic light emitting display may be realized without a plastic based substrate, and at the same time an ideal WVTR characteristic level for stably driving an organic light emitting element without deterioration may be realized. The flexible organic light emitting display comprises a first ultra-thin film glass substrate that includes aluminum silicide; a thin film transistor (TFT) device arranged on the first ultra-thin film glass substrate; and an organic light emitting element arranged on the TFT element.

Abstract: Provided are an asymmetric butadiene-based charge transporting compound represented by one of Formula (1) and (1?) as in claim 1, an electrophotographic photoreceptor including the asymmetric butadiene-based charge transporting compound, and an electrophotographic imaging apparatus. The electrophotographic photoreceptor including the organic photoconductive material as a charge transporting material may not cause a problem, such as partial crystallization during film formation and may have a high charge potential, a sufficient photoresponsive property with high sensitivity, and a high durability. Moreover, these properties may be all maintained even in the case of exposure to light as well as use in low-temperature environments or high-speed processes, thus having high reliability.

Abstract: The present invention relates to a technique for outputting threshold voltages by properly changing the threshold voltages such that the threshold voltages can protect low-voltage driving elements within an analog to digital converter when the threshold voltages of an OLED display panel are sensed and outputted to the analog to digital converter. The present invention comprises: a sampling capacitor which samples threshold voltages sensed and inputted from an organic light-emitting diode on a display panel; a charge-sharing capacitor which charges and shares the threshold voltages sampled from the sampling capacitor, or solely charges the threshold voltages to bypass the threshold voltages; and a sample-and-hold unit which has a plurality of switches for performing switching operations for the sampling operation of the sampling capacitor and the charging and the sharing of the charge-sharing capacitor, and scales the threshold voltages to threshold voltage areas having a certain value or less.

Abstract: There are provided a high voltage switch circuit and a semiconductor memory device including the same. A high voltage switch circuit may include a switching circuit including a first depletion transistor and a first high voltage transistor, which are coupled in series between an input terminal and an output terminal, and a control signal generator for applying, to the first depletion transistor, a control signal having the same potential level as an input voltage applied to the input terminal, in response to a first enable signal and a second enable signal.

Abstract: A data storage device may include a plurality of nonvolatile memory devices including a plurality of blocks and a controller suitable for generating super block parity data for a super block, which is formed of one or more of the plurality of blocks.

Abstract: The present invention relates to a grouping method and device for enhancing redundancy removing performance for a storage unit such as a hard disk, a solid state disk (SSD), etc. The grouping method for enhancing performance of a redundancy removing technology may include: extracting samples from data that is stored in a buffer of a memory and is standing by to be processed; performing remaining calculations on the extracted samples; and grouping samples by connecting them to a bucket corresponding to a resultant value of the remaining calculations.

Abstract: Provided are an asymmetric butadiene-based charge transporting compound represented by one of Formula (1) and (1?) as in claim 1, an electrophotographic photoreceptor including the asymmetric butadiene-based charge transporting compound, and an electrophotographic imaging apparatus. The electrophotographic photoreceptor including the organic photoconductive material as a charge transporting material may not cause a problem, such as partial crystallization during film formation and may have a high charge potential, a sufficient photoresponsive property with high sensitivity, and a high durability. Moreover, these properties may be all maintained even in the case of exposure to light as well as use in low-temperature environments or high-speed processes, thus having high reliability.

Abstract: A sealant forming device, a sealant forming method and a method for manufacturing a liquid crystal display device using the same are disclosed. According to the present invention, a sealant coagulated in a nozzle can be minimized or prevented by performing an instantaneous suction process. A sealant forming device includes a dispenser including a syringe, and a nozzle connected to a lower end of the syringe to discharge a sealant therethrough; a dispensing tube connected to the syringe to apply a pressure to the syringe; and an instantaneous suction tube connected to the syringe to extract the sealant remaining in the nozzle after discharging the sealant.

Abstract: A nonvolatile memory device may include a power-on reset signal generation unit suitable for receiving a power supply voltage, and generating a power-on reset signal that changes based on the power supply voltage, and a discharging signal generation unit suitable for generating a discharging signal for discharging a word line to be activated earlier than an activation timing of the power-on reset signal when the power supply voltage decreases.

Abstract: A flexible organic light emitting display and a method of fabricating the same are disclosed in which flexible organic light emitting display may be realized without a plastic based substrate, and at the same time an ideal WVTR characteristic level for stably driving an organic light emitting element without deterioration may be realized. The flexible organic light emitting display comprises a first ultra-thin film glass substrate that includes aluminum silicide; a thin film transistor (TFT) device arranged on the first ultra-thin film glass substrate; and an organic light emitting element arranged on the TFT element.

Abstract: Provided is a malfunction prevention circuit for a COG-form source driver integrated circuit with a power sequence in which a low voltage is applied after a high voltage is applied. The malfunction prevention circuit includes: a level shifter configured to process an input signal using the low voltage and output a control signal using the high voltage; and an initialization circuit configured to initialize the control signal to a constant voltage while an initialization signal is enabled. The initialization signal is enabled during a predetermined time from the time at which the low voltage starts to be applied at the initial stage of the power sequence.