Abstract: An embodiment discloses an ultraviolet light-emitting device including: a light-emitting structure including a plurality of light-emitting portions disposed on a first conductive type semiconductor layer, the plurality of light-emitting portions including an active layer and a second conductive type semiconductor layer; a first contact electrode disposed on the first conductive type semiconductor layer; a second contact electrode disposed on the second conductive type semiconductor layer; a first cover electrode disposed on the first contact electrode; and a second cover electrode disposed on the second contact electrode, wherein the light-emitting structure includes an intermediate layer formed in an etched region through which the first conductive type semiconductor layer is exposed, the intermediate layer including a lower composition of aluminum than the first conductive type semiconductor layer, wherein the intermediate layer includes a first intermediate region disposed between the plurality of light-em

Abstract: An integrated circuit is provided which includes a physically unclonable function (PUF). The integrated circuit comprises a PUF block including a plurality of physically unclonable function (PUF) cells configured to output a cell signal having a unique value according to an input, a conversion unit is configured to receive the cell signal as input, convert the cell signal, and output a conversion signal. A select signal generator provides a first selection signal to the conversion unit. A key generator is configured to receive the conversion signal from the conversion unit and generate a security key therefrom, wherein the conversion unit includes a first layer which outputs a second signal obtained by converting a provided first signal on the basis of a bit value of the first selection signal.

Abstract: Disclosed herein is a percutaneous catheter apparatus, comprising two nested needles; and an inner plunger; which is guided as a catheter to the tissue surrounding a hard implant to actuate and deploy a pair of sharp-tip needle-forceps that perform two concentric cuts, circularly spaced 90-degree apart from each other, to complete a 360 degree bore around the implant before squeezing to arrest and extract the implant, together with its surrounding tissue.

Abstract: An embodiment discloses an ultraviolet light emitting element including: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an etched region in which the first conductive semiconductor layer is exposed; a first insulating layer disposed on the light emitting structure and including a first hole which exposes a portion of the etched region; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the light emitting structure includes an intermediate layer regrown on the first conductive semiconductor layer exposed in the first hole, the first electrode is disposed on the intermediate layer, the etched region includes a first etched region disposed at an inner side and a second etched region disp

Abstract: The present invention relates to a method for manufacturing a secondary battery and an apparatus for manufacturing a secondary battery. The method for manufacturing the secondary battery according to the present invention comprises: an accommodation process of accommodating an electrode assembly, in which electrodes and separators are alternately stacked, an electrolyte, and one side portion of electrode leads connected to the electrodes, in a pouch to form a cell; an activation process of charging the cell to activate the cell; a pressing process of sequentially pressing the cell through pressing rolls after the activation process to press the cell; and a degassing process of discharging an internal gas of the cell to the outside after the pressing process.

Abstract: A semiconductor memory device may include a substrate including a first and a second block region, and a stacked structure including insulating films and gate electrodes alternately stacked on the substrate. A vertical channel structure, a word line cut structure, and a block cut structure may penetrate the stacked structure. The word line cut structure may extend in a second direction. The block cut structure may extend in a first direction, connect to the word line cut structure, and define the first and second block regions. The block cut structure may include a first portion connected to the word line cut structure and a second portion connected to the first portion. From a planar viewpoint, the first portion may include at least a part not overlapping the second portion in the first direction and at least a region not overlapping the word line cut structure in the first direction.

Abstract: A three-dimensional semiconductor memory device and an electronic system including the same are discussed. The device may include: a stack structure including electrode layers and inter-electrode insulating layers that are alternately stacked on a substrate; one or more vertical semiconductor structures that extend into the stack structure and are adjacent to the substrate; one or more vertical conductive structures arranged in a first direction between adjacent ones of the one or more vertical semiconductor structures and extending into the stack structure and are adjacent to the substrate; and a conductive line portion on the stack structure that extends in the first direction to connect the one or more vertical conductive structures to each other. The conductive line portion and the vertical conductive structures may be connected to form a single unit.

Abstract: A mobile terminal including: a memory having a plurality of applications stored therein; an application management module configured to receive application information corresponding to the respective applications, and generate status information of the applications, corresponding to the application information; and a controller configured to determine execution history information of the applications through the status information provided from the application management module, wherein the application management module includes: an application information collection unit configured to collect cache data size information of the respective applications at preset time intervals; and a comparison unit configured to generate the status information of the applications by comparing the cache data size information of the applications, collected by the application information collection unit, to reference values corresponding to the respective applications.

Abstract: An operating method of a manufacturing service device for managing a floating factory including obtaining demand information on an electronic product at a demand location, calculating cost information of at least one floating factory of a plurality of floating factories based on the demand information and status information of each of the floating factories, selecting a floating factory from the plurality of floating factories corresponding to the calculated cost information indicating a lowest cost, generating movement scheduling information of the selected floating factory based on the demand location and manufacturing locations of components of the electronic product, transmitting the movement scheduling information to the selected floating factory, configuring the selected floating factory to manufacture the electronic product and test the electronic product for defects based on the movement scheduling information, while moving to the demand location may be provided, and supplying the electronic product t

Abstract: A device for charging and discharging a battery cell includes first and second plates spaced from each other, the first and second plates being configured to press respective first and second surfaces of a battery cell locatable therebetween, and first and second pressing blocks located on the first and second plates, respectively, the first and second pressing blocks protruding from the first and second plates to face each other. The first and second pressing blocks are locatable in a space between a body and a gas pocket of the battery cell. A method using the device is also provided.

Abstract: A method for manufacturing a cylindrical battery having multiple tabs is provided in which the cylindrical battery includes an electrode assembly, a cylindrical pouch case, an electrode tab protruding to an upper end of the electrode assembly, and an electrode lead welded and electrically connected to the electrode tab, with the electrode tab being plural. The method includes disposing the plurality of electrode tabs on the electrode assembly; winding the electrode assembly into a cylindrical shape; connecting the electrode lead to the plurality of electrode tabs disposed on the upper end of the electrode assembly; inserting the electrode assembly into the cylindrical pouch case to produce a battery cell; connecting, to the cylindrical pouch case, a gas collecting part for collecting gas generated due to charging and discharging of the electrode; and forming a guide part for preventing deformation of the battery cell in the cylindrical pouch case.

Abstract: Disclosed in an embodiment is a semiconductor device comprising: a semiconductor structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a second electrode electrically connected to the second conductive type semiconductor layer; and a reflective layer disposed under the second electrode, wherein the second conductive type semiconductor layer comprises a first sub-layer and a second sub-layer disposed between the first sub-layer and the active layer and having an aluminum (Al) composition higher than that of the first sub-layer, the reflective layer comes into contact with the lower surface of the second sub-layer, and the second electrode comes into contact with the first sub-layer.

Abstract: This application relates to an absolute position detection device and detection method of a rotating body using a magnetic material. The device may include magnets coupled to a rotating body and configured to rotate together and having n pole pairs, wherein n is a natural number and (n+1) magnetic materials arranged adjacent to the magnets, spaced apart from each other by a predetermined interval, and configured to rotate together with the rotating body. The device may also include a first Hall sensor spaced apart from the magnets, installed to allow the magnetic materials to rotate in a space between the first Hall sensor and the magnets and configured to output a first signal based on the magnets when the magnetic materials approach the first Hall sensor. The device may further include a controller configured to measure an absolute position of the rotating body using the first signal.

Abstract: The present invention relates to a photo-cross-linkable shape-memory polymer and a preparation method therefor. The shape-memory polymer according to one embodiment of the present invention comprises a photo-cross-linkable functional group, and thus a shape-memory polymer having a melting point suitable for a physiological or medical application device can be provided. Particularly, a method for preparing the shape-memory polymer, according to one embodiment of the present invention, uses a catalyst for inducing the simultaneous ring-opening polymerization of two monomers (CL, GMA) during synthesis of the shape-memory polymer, thereby enabling the synthesis time of the shape-memory polymer to be reduced, and shape-memory polymers having various melting points can be readily prepared by controlling the introduction amounts of CL and GMA.

Abstract: A semiconductor memory device may include a cell substrate including a cell array region and an extension region, a first mold structure on the cell substrate, a second mold structure on the first mold structure, a channel structure passing through the first and second mold structures on the cell array region, and a cell contact structure passing through the first and second mold structures on the extension region. The first mold structure and the second mold structure respectively include first gate electrodes and second gate electrodes sequentially stacked on the cell array region and stacked in a stepwise manner on the extension region. The cell contact structure includes a lower conductive pattern connected to one of the first gate electrodes, an upper conductive pattern connected to one of the second gate electrodes, and an insulating pattern separating the lower conductive pattern from the upper conductive pattern.

Abstract: The present invention is a method for manufacturing a secondary battery. An electrode assembly and an electrolyte are accommodated into a body of a battery case. The body of the battery case has an accommodation part and a gas pocket part, and a passage that extends from the accommodation part to the outside discharges an internal gas from the accommodation part through the gas pocket part. The battery case is seated in a seating step on a support block, which has an inclined part on a side surface thereof, to support the battery case. The body is pressed to discharge a gas accommodated in the accommodation part through the gas pocket part in the battery case. This method allows easy discharging of internal gas while reducing discharge of the electrolyte with the gas.

Abstract: A method of manufacturing a bulk acoustic wave (BAW) resonator according to an embodiment of the present invention may include: forming a lower electrode above a substrate; forming a nitrogen layer on an upper surface of the lower electrode through nitrogen (N2) plasma surface treatment; forming a piezoelectric layer made of an AlScN material above the nitrogen layer to align an upper surface of the piezoelectric layer to an N polarity; and forming an upper electrode above the piezoelectric layer aligned to the N polarity.

Abstract: The present invention provides a gas removing device, which removes a gas generated inside a pouch, in which an electrode assembly is accommodated. The gas removing device includes a pair of vacuum tubes configured to press opposing surfaces of a pouch so as to form a vacuum surface on the pouch; a heating member provided on a pressing surface of each of the vacuum tubes, which presses the pouch, is configured to seal only a portion of an edge of the vacuum surface so as to form a sealed part and an unsealed part; a cutting member configured to cut the vacuum surface of the pouch and form a cutoff hole; and a gas discharging member configured to discharge a gas from inside the pouch to the outside through the unsealed part, the cutoff hole, and the vacuum tubes.

Abstract: A semiconductor memory device includes a first substrate including opposite first and second surfaces, a mold structure including gate electrodes stacked on the first surface of the first substrate, a channel structure through the mold structure, a first contact via penetrating the first substrate, a second substrate including opposite third and fourth surfaces, a circuit element on the third surface of the second substrate, a first through-via through the mold structure connecting the first contact via and the circuit element, the first through-via including a first conductive pattern, and a first spacer separating the first conductive pattern from the mold structure, and a second through-via through the mold structure and spaced apart from the first through-via, the second through-via including a second conductive pattern, and a second spacer separating the second conductive pattern from the first substrate and the mold structure.