Abstract: Disclosed is a method for culturing Haematococcus pluvialis containing a large amount of astaxanthin. According to one embodiment, the method includes culturing Haematococcus pluvialis under autotrophic conditions to prepare a culture containing cysts in which astaxanthin is accumulated and adding a nitrogen source to the culture to induce germination of the cysts.

Abstract: A gateway of a surveillance system, the gateway includes: a communication module configured to communicate with a plurality of network cameras including a first network camera and a second network camera; and a processor configured to recognize a motion of a subject based on event information transmitted by the first network camera and to transmit subject information generated based on the motion of the subject to the second network camera.

Abstract: The present invention is a method for manufacturing a secondary battery. An electrode assembly and an electrolyte are accommodated into a body of a battery case. The body of the battery case has an accommodation part and a gas pocket part, and a passage that extends from the accommodation part to the outside discharges an internal gas from the accommodation part through the gas pocket part. The battery case is seated in a seating step on a support block, which has an inclined part on a side surface thereof, to support the battery case. The body is pressed to discharge a gas accommodated in the accommodation part through the gas pocket part in the battery case. This method allows easy discharging of internal gas while reducing discharge of the electrolyte with the gas.

Abstract: An embodiment provides a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses extending through the second conductive semiconductor layer and the active layer and arranged up to a partial region of the first conductive semiconductor layer; a plurality of first electrodes arranged inside the plurality of recesses and electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first conductive layer electrically connected to the plurality of first electrodes; a second conductive layer electrically connected to the second electrode; and an electrode pad electrically connected to the second conductive layer, wherein the electrode pad comprises a first electrode pad and a seco

Abstract: This application relates to an absolute position detection device and detection method of a rotating body. In one aspect, the device includes first row magnets coupled to a rotating body to rotate together and having n pole pairs, and second row magnets coupled to the rotating body to rotate together and having (n+1) pole pairs. The device also includes a first Hall sensor installed adjacent to the first row magnets and configured to detect a change in magnetism according to rotation of the first row magnets. The device further includes a second Hall sensor installed adjacent to the second row magnets and configured to detect a change in magnetism according to rotation of the second row magnets. The device further includes a controller configured to measure an absolute position of the rotating body using signals output from the first and second Hall sensors.

Abstract: A semiconductor device includes a substrate, a first stack structure on the substrate and includes a plurality of first gate electrodes, a second stack structure on the first stack structure and includes a plurality of second gate electrodes, a channel hole including a first lower channel hole that extends through a lower portion of the first stack structure, a first upper channel hole connected to the first lower channel hole, and a second channel hole connected to the first upper channel hole, and a channel structure in the channel hole. A side wall of the first lower channel hole has a first inclination relative to the first direction, a side wall of the first upper channel hole has a second inclination relative to the first direction, and a side wall of the second channel hole has a third inclination relative to the first direction.

Abstract: A temperature measurement device suitable for measuring the temperature of each secondary battery to consider a temperature deviation between secondary batteries that may occur during charging/discharging in the formation process and capacity test after the secondary battery assembly process, and a charge/discharge apparatus including the temperature measurement device are provided. The temperature measurement device is for measuring a temperature of at least one of a plurality of secondary batteries arranged along an X-axis direction, spaced apart from one another, in a standing position, and includes a non-contact temperature sensor unit which is insertable into a spacing between adjacent secondary batteries to measure the temperature of the secondary battery that the non-contact temperature sensor unit faces in a non-contact manner, and a Z-axis transfer device which inserts the non-contact temperature sensor unit into the spacing downward from above the secondary batteries in a Z-axis direction.

Abstract: A charging-discharging device for secondary battery and a secondary battery activation process device are provided. The charging-discharging device of the present invention includes a box-type body including two open parts formed at lateral surfaces thereof; charging-discharging terminals disposed on lateral surfaces of the body; a nonflammable blocking means for opening or closing the open parts at the lateral surfaces; an air conditioning line connected to the inside of the body to individually control the temperature of each charging-discharging device; and/or a CO 2 supply line for spraying carbon dioxide inside the body when a fire occurs. It is possible to uniformly control and manage the internal temperature of the charging-discharging device for performing an activation process of a secondary battery, and when a fire occurs, the fire can be immediately and efficiently extinguished and prevented from spreading to the outside.

Abstract: A vertical semiconductor device including a plurality of vertical memory cells on an upper surface of a first substrate, an adhesive layer on a lower surface of the first substrate that is opposite to the upper surface of the first substrate, a second substrate having first peripheral circuits thereon, a lower insulating interlayer on the second substrate, and a plurality of wiring structures electrically connecting the vertical memory cells and the first peripheral circuits. A lower surface of the adhesive layer and an upper surface of the lower insulating interlayer may be in contact with each other.

Abstract: The present invention relates to a method for diagnosing and treating atherosclerosis by using nanovesicle targeting a site of change in blood flow, and more specifically, the present invention provides a stem cell-derived nanovesicle, which is an anti-atherosclerosis diagnosis and treatment platform using a peptide capable of targeting a disturbed blood flow, wherein the nanovesicle provides strong anti-inflammatory and pre-endothelial recovery effects similar to that of a mesenchymal stem cell, and thus it can be used as a new diagnosis and treatment agent capable of preventing the onset of atherosclerosis.

Abstract: A semiconductor device includes a cell semiconductor pattern disposed on a semiconductor substrate. A semiconductor dummy pattern is disposed on the semiconductor substrate, The semiconductor dummy pattern is co-planar with the cell semiconductor pattern. A first circuit is disposed between the semiconductor substrate and the cell semiconductor pattern. A first interconnection structure is disposed between the semiconductor substrate and the cell semiconductor pattern. A first dummy structure is disposed between the semiconductor substrate and the cell semiconductor pattern. Part of the first dummy structure is co-planar with part of the first interconnection structure. A second dummy structure not overlapping the cell semiconductor pattern is disposed on the semiconductor substrate. Part of the second dummy structure is co-planar with part of the first interconnection structure.

Abstract: The present invention relates to a large-scale photosynthetic bioreactor in which transparent photobioreactors including a baffle are connected in parallel or in series by an adhesive element so that the reactor volume can be easily scaled up for scale-up culture of photosynthetic organisms, and to a fabrication method thereof. The large-scale photosynthetic bioreactor according to the present invention makes it possible to culture a larger amount of microalgae than a conventional photobioreactor in the same area. In addition, it has high light transmittance, produces a large amount of biomass per unit area due to smooth mixing, and has a significant effect of reducing carbon dioxide. Furthermore, the present invention has an advantage in that the number of photosynthetic bioreactors required to culture the same scale of photosynthetic organisms is significantly smaller than that in a conventional process for culture of photosynthetic organisms, and thus the operating costs can be reduced.

Abstract: A pressing jig for removing gas generated in an activation process of a battery cell includes a plate-shaped lower plate on which the battery cell that has undergone the activation process is placed and fixed, and an upper plate that presses the battery cell placed on the lower plate from above. At least one of the upper plate or the lower plate has a structure in which n (n?3) separated sub-plates are assembled to form a single plate, and the sub-plates independently press the battery cell. The pressing jig can suppress trapping of internal gas by sequentially pressing the battery cell.

Abstract: A nonvolatile memory device including a mold structure including a plurality of gate electrodes on a substrate, the plurality of gate electrodes including first, second, and third string selection lines sequentially stacked on the substrate; a channel structure that penetrates the mold structure and intersects each of the gate electrodes; a first cutting region that cuts each of the gate electrodes; a second cutting region that is spaced apart from the first cutting region in a first direction and cuts each of the gate electrodes; a first cutting line that cuts the first string selection line between the first cutting region and the second cutting region; a second cutting line that cuts the second string selection line between the first cutting region and the second cutting region; and a third cutting line that cuts the third string selection line between the first cutting region and the second cutting region.

Abstract: A three-dimensional semiconductor memory device may include horizontal patterns disposed on a peripheral circuit structure and spaced apart from each other, memory structures provided on the horizontal patterns, respectively, each of the memory structures including a three-dimensional arrangement of memory cells. Penetrating insulating patterns and separation structures may isolate the horizontal patterns from one another. Through vias may extend through the penetrating insulating patterns to connect logic circuits of the peripheral circuit structure to the memory structure.

Abstract: Provided are a method of obtaining a water-fat separation image and a magnetic resonance imaging (MRI) apparatus including a controller configured to obtain first partial k-space data, second partial k-space data, and third partial k-space data, respectively based on a first partial echo signal, a second partial echo signal, and a third partial echo signal, which are magnetic resonance signals corresponding to a plurality of echo times with respect to an object, obtain first reconstruction image data, second reconstruction image data, and third reconstruction image data with respect to the object, respectively based on the first partial k-space data, the second partial k-space data, and the third partial k-space data, and obtain first water image data, first fat image data, and first phase image data of the object, respectively based on the first reconstruction image data, the second reconstruction image data, and the third reconstruction image data, by using a Dixon technique.

Abstract: A semiconductor device is provided. The semiconductor device includes a stack structure that includes a plurality of dielectric layers spaced apart from each other on a substrate, a plurality of electrodes interposed between the plurality of dielectric layers, and a plurality of stopper layers interposed between the plurality of dielectric layers; and a vertical channel structure that penetrates the stack structure. Each of the plurality of electrodes and the plurality of stopper layers is disposed in a corresponding empty space interposed between the plurality of dielectric layers, the plurality of stopper layers includes a first stopper layer and a second stopper layer that is interposed between the first stopper layer and the substrate, and at least one of the plurality of electrodes is interposed between the first stopper layer and the second stopper layer.

Abstract: The present invention relates to use of miR-18b for prevention, treatment, or diagnosis of muscle diseases or neuromuscular diseases, and specifically it was confirmed that, in a muscle disease by gene mutations model, gene mutations reduce miR-18b expression, cause dysregulation of miR-18b signaling pathways, and thus induce calcium signaling, cell differentiation inhibition, and apoptosis. Therefore, miR-18b of the present invention may be used as a target factor for diagnosing and treating muscle diseases caused by gene mutations such as ALS and DMD.