Abstract: The invention relates to an optoelectronic semiconductor component including a semiconductor body having a first region with a first conductivity, a second region with a second conductivity and an active region which is designed to emit coherent electromagnetic radiation. An optical resonator is formed along a resonator axis in the semiconductor body. The semiconductor body has a mounting side and side surfaces running transversely to the mounting side. Side surfaces running parallel to the resonator axis are covered by an electrically insulating passivation. A cooling layer which is designed to dissipate at least part of the power loss created in the semiconductor body during operation is arranged on a side of the passivation facing away from the semiconductor body. The invention also relates to an optoelectronic module.

Abstract: A component including a carrier and exactly two semiconductor chips arranged next to one another on the carrier is specified, the exactly two semiconductor chips are each embodied as a double-emitter having exactly two emitter regions or each being embodied as a triple-emitter having exactly three emitter regions and are thus different from a single-emitter. The emitter regions of the component are assigned to the exactly two semiconductor chips, the exactly two semiconductor chips being laser diodes which each have ridges defining the emitter region. The exactly two semiconductor chips are electrically contacted via the carrier.

Abstract: The invention relates to an optoelectronic assembly including at least two semiconductor laser components, which are designed to emit electromagnetic radiation, and an optical superpositioning element with at least one radiation inlet surface and a radiation outlet surface. Each semiconductor laser component is paired with a respective optical element, and each semiconductor laser component emits an inlet beam bundle or a plurality of spatially separated inlet beam bundles. All of the inlet beam bundles of a semiconductor laser component pass through the respective paired optical element, wherein a plurality of inlet beam bundles emitted by a semiconductor laser component are fanned out relative to each other after passing through the optical element such that the inlet beam bundles enter the optical superpositioning element at different inlet angles.

Abstract: In an embodiment a method includes providing a connecting element having a first main surface, applying a first frame-shaped metallization to or over a carrier and applying a first frame-shaped solder reservoir over the first main surface of the connecting element or applying the first frame-shaped metallization over the first main surface of the connecting element and applying the first frame-shaped solder reservoir over or to the carrier, wherein a width of the first frame-shaped solder reservoir is smaller than a width of the first frame-shaped metallization and liquefying a solder of the first frame-shaped solder reservoir so that a first frame-shaped solder layer is formed which mechanically connects the carrier and the connecting element to one another, the first frame-shaped solder layer having a seam which is formed during liquefying the solder of the first frame-shaped solder reservoir and surrounds the first frame-shaped solder layer.

Abstract: A laser component is provided, the laser component including at least one first laser diode, and at least one second laser diode, the first laser diode and the second laser diode each including an active zone in a semiconductor layer, the active zones each extend parallel to the main plane of extension of the respective laser diode, the semiconductor layers each include a first side and a second side facing away from the first side, the first side and the second side each extending parallel to the main plane of extension of the respective laser diode, the second laser diode being arranged on the first laser diode in a vertical direction which is perpendicular to the main plane of extensions of the laser diodes, the first laser diode having a larger extent in its main plane of extension than the second laser diode in its main plane of extension and at least one electrical contact is arranged in a contact region of the first laser diode which is arranged on the side of the first laser diode facing the second la

Abstract: A semiconductor chip with a structured chip back side is specified, the chip back side being configured for electrical and thermal linking of the semiconductor chip, the semiconductor chip having emitter regions configured for producing electromagnetic radiation and the structured chip back side having connection pads configured for electrical linking of the emitter regions. The connection pads are p-contacts or n-contacts, with, in a plan view, all connection pads (which are configured either as p-contacts or as n-contacts overlapping with at least two of the emitter regions in each case and each of these connection pads being configured for electrical linking of only one of the emitter regions. Moreover, a component is specified, in particular comprising at least one such semiconductor chip.

Abstract: In one embodiment, the method serves for producing semiconductor lasers and includes the following steps in the order indicated: A) applying a multiplicity of edge emitting laser diodes on a mounting substrate, B) applying an encapsulation element, such that the laser diodes are applied in each case in a cavity between the mounting substrate and the associated encapsulation element, C) operating the laser diodes and determining emission directions of the laser diodes, D) producing material damage in partial regions of the encapsulation element, wherein the partial regions are uniquely assigned to the laser diodes, E) collectively removing material of the encapsulation element, said material being affected by the material damage, with the result that individual optical surfaces for beam shaping arise for the laser diodes in the partial regions, and F) singulating to form the semiconductor lasers.

Abstract: A projector includes a first optoelectronic semiconductor chip for generating a first radiation having a first color. The projector also includes a second optoelectronic semiconductor chip for generating a second radiation-having a second color. The projector further includes a wavelength conversion element which is configured to generate a third radiation having a third color from a first portion of the first radiation. The projector additionally includes beam splitter. The projector also includes a scattering plate. The wavelength conversion element is configured to fully convert the first portion of the first radiation. The beam splitter is configured to branch off a second portion of the first radiation upstream of the wavelength conversion element. The scattering plate is arranged in a beam path of the second portion of the first radiation at a point at which the first portion has already been branched off.

Abstract: In an embodiment a radiation-emitting component includes a first semiconductor chip configured to generate first primary electromagnetic radiation, a second semiconductor chip configured to generate second primary electromagnetic radiation, a first conversion element configured to partially convert the first and/or the second primary electromagnetic radiation into a first secondary radiation, wherein the first semiconductor chip is a first semiconductor laser diode, wherein the first primary electromagnetic radiation is blue primary radiation and wherein the first secondary radiation is green secondary radiation and a first optical element arranged between radiation emitting surfaces of the first semiconductor chip and the second semiconductor chip, wherein the first optical element is reflective for the first primary radiation and the second primary radiation.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: The invention relates to a semiconductor laser including a carrier, an edge-emitting laser diode which is arranged on the carrier and which has an active zone for generating laser radiation and a facet with a radiation exit area, an optical element which covers the facet, a connecting material which is arranged between the optical element and the facet, a molded body which covers the laser diode and the optical element at least in places, wherein the optical element is at least partially transparent to the laser radiation emitted by the laser diode during operation, and the optical element is designed to change the main propagation direction of the laser radiation entering the optical element during operation.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: The invention relates to a radiation-emitting laser component including:—an edge-emitting laser diode which is designed to generate electromagnetic laser radiation, and—a substrate, on which the edge-emitting laser diode is arranged, wherein—the edge-emitting laser diode has a contact layer,—the substrate has a substrate web, and—the contact layer is connected to the substrate web by means of a solder layer in a mechanically stable manner. The invention also relates to a method for producing a radiation-emitting laser component.

Abstract: The invention relates to an optoelectronic component including a semiconductor chip having a coupling-out facet that emits electromagnetic primary radiation during operation, —a functional layer, wherein the coupling-out facet is at least partially covered by the functional layer, and —the functional layer is a catalytic layer. The invention also relates to a method for producing an optoelectronic component.

Abstract: The invention relates to a laser projection arrangement. The arrangement includes a sub-mount carrier with a main surface and at least one edge-emitting laser arranged on the sub-mount. The at least one edge-emitting laser is facing the sub-mount and includes at least one laser facet that is located at a predefined distance from the main surface of the sub-mount. A planar light circuit with at least one light guide has an inlet and is arranged on the sub-mount such that the at least one light guide and the inlet is located at the predefined distance from the main surface of the sub-mount facing the at least one laser facet.

Abstract: A planar light circuit comprises a substrate and a first pixel. The first pixel comprises a first number N of laser diodes, a first waveguide located on the substrate, a first number N of inlets which couple the first number N of laser diodes to the first waveguide and a first outlet. The first waveguide couples the first number N of inlets to the first outlet. An arrangement comprises the planar light circuit. The arrangement is realized as data glasses.

Abstract: Carrier with an electrically insulating base material, electrically conductive through-connections and a thermal connection element. The through-connections and the thermal connection element are each completely surrounded by the base material in the lateral direction, the thermal connection element and the through-connections completely penetrating the base material perpendicularly to the main extension plane of the carrier, and the thermal connection element being formed with a material which has a thermal conductivity of at least 200 W/(m K).

Abstract: The invention relates to a laser projection arrangement. The arrangement includes a sub-mount carrier with a main surface and at least one edge-emitting laser arranged on the sub-mount. The at least one edge-emitting laser is facing the sub-mount and includes at least one laser facet that is located at a predefined distance from the main surface of the sub-mount. A planar light circuit with at least one light guide has an inlet and is arranged on the sub-mount such that the at least one light guide and the inlet is located at the predefined distance from the main surface of the sub-mount facing the at least one laser facet.

Abstract: In one embodiment, the optoelectronic semiconductor component includes at least one optoelectronic semiconductor chip for generating radiation and a housing, in which the at least one optoelectronic semiconductor chip is hermetically encapsulated. The housing includes a housing cover which is secured to a housing main part by a connection means. The housing additionally includes a gas exchange channel which is hermetically sealed by a seal.

Abstract: The invention relates to a semiconductor laser including a carrier, an edge-emitting laser diode which is arranged on the carrier and which has an active zone for generating laser radiation and a facet with a radiation exit area, an optical element which covers the facet, a connecting material which is arranged between the optical element and the facet, a molded body which covers the laser diode and the optical element at least in places, wherein the optical element is at least partially transparent to the laser radiation emitted by the laser diode during operation, and the optical element is designed to change the main propagation direction of the laser radiation entering the optical element during operation.