Abstract: In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 ?m. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: The invention relates to a laser device which includes at least one laser diode having an emission surface via which the laser diode can emit laser light during operation, and a screening element having an entry surface facing the emission surface.

Abstract: In an embodiment a semiconductor laser component includes a plurality of semiconductor lasers, each of the semiconductor lasers configured to emit primary electromagnetic radiation of a primary spectral bandwidth in a visible wavelength range and a beam combiner configured to combine the primary electromagnetic radiations emitted from the semiconductor lasers, form secondary electromagnetic radiation from a superposition of the primary electromagnetic radiations of the semiconductor lasers and couple the secondary electromagnetic radiation out from the beam combiner, wherein the secondary electromagnetic radiation has a secondary spectral bandwidth that is at least twice as large as an average value of the primary spectral bandwidths.

Abstract: The invention relates to a method for producing a semi-conductor laser arrangement, in which a first laser diode chip is arranged on a first intermediate support. A second laser diode chip is arranged on a second intermediate support. The second laser diode chip with the second intermediate support is arranged on the first intermediate support, the second intermediate support being arranged on a side of the second laser diode chip facing away from the first intermediate support. The invention furthermore relates to a semi-conductor arrangement.

Abstract: In at least one embodiment, the optoelectronic semiconductor device comprises a carrier, a first semiconductor laser configured to emit a first laser radiation and applied on the carrier, and a multi-mode waveguide configured to guide the first laser radiation and also applied on the carrier, wherein the multi-mode waveguide comprises at least one furcation and a plurality of branches connected by the at least one furcation.

Abstract: An optoelectronic component is provided that includes a radiation-emitting semiconductor chip, which emits electromagnetic radiation from a radiation exit surface during operation, a carrier comprising at least two first contact points, and a cover including at least two second contact points, wherein the at least two first contact points and the at least two second contact points are electrically conductively and/or thermally conductively connected to one another by a first plurality of nanowires and a second plurality of nanowires, and the nanowires provide a mechanically stable connection between the carrier and the cover. In addition, a method for producing an optoelectronic component is provided.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: A laser package is described, the laser package comprising a plurality of laser diodes separately attached to at least one sub-mount having respective connecting pads, wherein, during operation, each of the laser diodes emits light having a fast axis and a slow axis defining a fast axis plane and a slow axis plane, wherein the fast axis planes of all laser diodes are parallel to each other and the distance between the fast axis planes of at least two laser diodes is smaller than the lateral distance between these laser diodes. Furthermore, a system with at least two laser packages is described.

Abstract: Provided is an optoelectronic light source that includes a plurality of semiconductor lasers each configured to emit a laser beam and arranged on a mounting platform, and a redirecting optical element configured to redirect the laser beams. The redirecting optical element includes for each one of the plurality of semiconductor lasers a separate reflection zone, the reflection zones are shaped differently from one another, and after passing the redirecting optical element, the laser beams run in a common plane.

Abstract: A planar light circuit comprises a substrate and a first pixel. The first pixel comprises a first number N of laser diodes, a first waveguide located on the substrate, a first number N of inlets which couple the first number N of laser diodes to the first waveguide and a first outlet. The first waveguide couples the first number N of inlets to the first outlet. An arrangement comprises the planar light circuit. The arrangement is realized as data glasses.

Abstract: Provided is an optoelectronic light source that includes a plurality of semiconductor lasers each configured to emit a laser beam and arranged on a mounting platform, and a redirecting optical element configured to redirect the laser beams. The redirecting optical element includes for each one of the plurality of semiconductor lasers a separate reflection zone, the reflection zones are shaped differently from one another, and after passing the redirecting optical element, the laser beams run in a common plane.

Abstract: The invention relates to a laser projection arrangement. The arrangement includes a sub-mount carrier with a main surface and at least one edge-emitting laser arranged on the sub-mount. The at least one edge-emitting laser is facing the sub-mount and includes at least one laser facet that is located at a predefined distance from the main surface of the sub-mount. A planar light circuit with at least one light guide has an inlet and is arranged on the sub-mount such that the at least one light guide and the inlet is located at the predefined distance from the main surface of the sub-mount facing the at least one laser facet.

Abstract: In one embodiment, the optoelectronic semiconductor component (1) comprises a semiconductor chip (2) for generating radiation and an inorganic housing (3). The semiconductor chip (2) is accommodated in a hermetically sealed manner in the housing (3). The housing (3) has a preferably ceramic base plate (31), a cover plate (33) and at least one preferably ceramic housing ring (32) and a plurality of electrical through-connections (51). A recess (15), in which the semiconductor chip (2) is located, is formed by the housing ring (32). The base plate (31) has a plurality of electrical connection surfaces (35) on a component underside (11). A plurality of through-connections (51) each extend through the base plate (31), through the cover plate (33) and through the housing ring (32). The base plate (31), the at least one housing ring (32) and the cover plate (33) are firmly connected to one another via continuous, peripheral inorganic sealing frames (6).

Abstract: A semiconductor laser includes an edge-emitting laser diode, which has an active zone for generating laser radiation and a facet having a radiation exit region, and at least one photodiode. The facet is arranged on a main emission side of the laser diode. The photodiode is arranged in such a way that at least part of the laser radiation exiting at the facet reaches the photodiode.

Abstract: In one embodiment, the method serves for producing semiconductor lasers and includes the following steps in the order indicated: A) applying a multiplicity of edge emitting laser diodes on a mounting substrate, B) applying an encapsulation element, such that the laser diodes are applied in each case in a cavity between the mounting substrate and the associated encapsulation element, C) operating the laser diodes and determining emission directions of the laser diodes, D) producing material damage in partial regions of the encapsulation element, wherein the partial regions are uniquely assigned to the laser diodes, E) collectively removing material of the encapsulation element, said material being affected by the material damage, with the result that individual optical surfaces for beam shaping arise for the laser diodes in the partial regions, and F) singulating to form the semiconductor lasers.

Abstract: In an embodiment a radiation-emitting component includes a first semiconductor chip configured to generate first primary electromagnetic radiation, a second semiconductor chip configured to generate second primary electromagnetic radiation, a first conversion element configured to partially convert the first and/or the second primary electromagnetic radiation into a first secondary radiation, wherein the first semiconductor chip is a first semiconductor laser diode, wherein the first primary electromagnetic radiation is blue primary radiation and wherein the first secondary radiation is green secondary radiation and a first optical element arranged between radiation emitting surfaces of the first semiconductor chip and the second semiconductor chip, wherein the first optical element is reflective for the first primary radiation and the second primary radiation.

Abstract: The invention relates to a semiconductor laser including a carrier, an edge-emitting laser diode which is arranged on the carrier and which has an active zone for generating laser radiation and a facet with a radiation exit area, an optical element which covers the facet, a connecting material which is arranged between the optical element and the facet, a molded body which covers the laser diode and the optical element at least in places, wherein the optical element is at least partially transparent to the laser radiation emitted by the laser diode during operation, and the optical element is designed to change the main propagation direction of the laser radiation entering the optical element during operation.

Abstract: An optoelectronic component is provided that includes a radiation-emitting semiconductor chip, which emits electromagnetic radiation from a radiation exit surface during operation, a carrier comprising at least two first contact points, and a cover comprising at least two second contact points (4c), wherein the at least two first contact points and the at least two second contact points are electrically conductively and/or thermally conductively connected to one another by a first plurality of nanowires and a second plurality (6b) of nanowires, and the nanowires provide a mechanically stable connection between the carrier and the cover. In addition, a method for producing an optoelectronic component is given.

Abstract: A filament structure, a lighting device with filament structures, a method for manufacturing a lighting device and a method for manufacturing a filament structure are disclosed.

Abstract: In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 ?m. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.