Abstract: A carrier device for an electrical component includes a carrier, which includes an electrically insulating layer, and an electrical contact layer on the electrically insulating layer The electrical contact layer includes at least one bridge-shaped contact region At least one recess in the electrically insulating layer is arranged at least on one side surface of the bridge-shaped contact region and/or the bridge-shaped contact region includes a bridge width reducing toward the insulating layer.

Abstract: A component with an optoelectronic semiconductor chip fixed to a connection carrier by a bonding layer and embedded in an encapsulation, wherein a decoupling layer is arranged at least in places between the bonding layer and the encapsulation.

Abstract: An optoelectronic module is described including a carrier substrate and a plurality of radiation-emitting semiconductor components. The carrier substrate includes structured conductor tracks. The radiation-emitting semiconductor components each include an active layer suitable for generating electromagnetic radiation, a first contact area and a second contact area. The first contact area is in each case arranged on that side of the radiation-emitting semiconductor components that is remote from the carrier substrate. The radiation-emitting semiconductor components are provided with an electrically insulating layer, which in each case has a cutout in a region of the first contact area. Conductive structures are arranged in regions on the electrically insulating layer.

Abstract: A radiation-emitting component includes a semiconductor layer stack having an active region that emits electromagnetic radiation, and at least one surface of the semiconductor layer stack or of an optical element that transmits the electromagnetic radiation wherein the surface has a normal vector, wherein on the at least one surface of the semiconductor layer stack or of the optical element through which the electromagnetic radiation passes, an antireflection layer is arranged such that, for a predetermined wavelength, it has a minimum reflection at a viewing angle relative to the normal vector of the surface at which an increase in a zonal luminous flux of the electromagnetic radiation has approximately a maximum.

Abstract: In a method for producing a radiation-emitting optoelectronic component, a semiconductor chip is mounted by a first main area onto a carrier body and is electrically conductively connected at a first contact area to a first connection region, and a transparent electrically insulating encapsulation layer is applied to the chip and the carrier body. A first cutout in the encapsulation layer for at least partly uncovering a second contact area of the chip is produced, and a second cutout in the encapsulation layer for at least partly uncovering a second connection region of the carrier body is produced. Finally, an electrically conductive layer, which electrically conductively connects the second contact area of the semiconductor chip and the second connection region of the carrier body, is applied.

Abstract: An optoelectronic headlight which emits electromagnetic radiation is specified, which has a luminescence diode chip with at least two spatial emission regions or which has at least two luminescence diode chips each having at least one spatial emission region. The headlight is suitable in particular for a front headlight for motor vehicles. The emission regions, in a plan view of a main extension plane associated with them, are shaped differently, are of different sizes and/or are not shaped rectangularly and are differently oriented. Particularly preferably, the emission regions can be driven independently of one another. Methods for production of an optoelectronic headlight and a luminescence diode chip are furthermore specified.

Abstract: An optoelectronic headlight which emits electromagnetic radiation is specified, which has a luminescence diode chip with at least two spatial emission regions or which has at least two luminescence diode chips each having at least one spatial emission region. The headlight is suitable in particular for a front headlight for motor vehicles. The emission regions, in a plan view of a main extension plane associated with them, are shaped differently, are of different sizes and/or are not shaped rectangularly and are differently oriented. Particularly preferably, the emission regions can be driven independently of one another. Methods for production of an optoelectronic headlight and a luminescence diode chip are furthermore specified.

Abstract: A light-emitting diode arrangement comprising a plurality of semiconductor chips which are provided for emitting electromagnetic radiation from their front side and which are fixed by their rear side—opposite the front side—on a first main face of a common carrier body, wherein the semiconductor chips consist of a respective substrateless semiconductor layer stack and are fixed to the common carrier body without an auxiliary carrier, and to a method for producing such a light-emitting diode arrangement.

Abstract: An optoelectronic semiconductor device is specified, comprising a multiplicity of radiation-emitting semiconductor chips (2), arranged in a matrix-like manner, wherein the semiconductor chips (2) are applied on a common carrier (1), at least one converter element (3) disposed downstream of at least one semiconductor chip (2) for converting electromagnetic radiation emitted by the semiconductor chip (2), at least one scattering element (4) situated downstream of each semiconductor chip (2) and serving for diffusely scattering electromagnetic radiation emitted by the semiconductor chip (2), wherein the scattering element (4) is in direct contact with the converter element (3).

Abstract: An optoelectronic component including a connection carrier including an electrically insulating film at a top side of the connection carrier, an optoelectronic semiconductor chip at the top side of the connection carrier, a cutout in the electrically insulating film which encloses the optoelectronic semiconductor chip, and a potting body surrounding the optoelectronic semiconductor chip, wherein a bottom area of the cutout is formed at least regionally by the electrically insulating film, the potting body extends at least regionally as far as an outer edge of the cutout facing the optoelectronic semiconductor chip, and the cutout is at least regionally free of the potting body.

Abstract: A light-emitting diode arrangement comprising a plurality of semiconductor chips which are provided for emitting electromagnetic radiation from their front side (101) and which are fixed by their rear side (102)—opposite the front side—on a first main face (201) of a common carrier body (2), wherein the semiconductor chips consist of a respective substrateless semiconductor layer stack (1) and are fixed to the common carrier body without an auxiliary carrier, and to a method for producing such a light-emitting diode arrangement.

Abstract: An optoelectronic module is specified, comprising a carrier substrate (1) and a plurality of radiation-emitting semiconductor components (2). The carrier substrate (1) comprises structured conductor tracks. The radiation-emitting semiconductor components (2) each comprise an active layer (2a) suitable for generating electromagnetic radiation, a first contact area (21) and a second contact area (22), wherein the first contact area (21) is in each case arranged on that side of the radiation-emitting semiconductor components (2) which is remote from the carrier substrate (1). The radiation-emitting semiconductor components (2) are provided with an electrically insulating layer (4), which in each case has a cutout in a region of the first contact area (21). Conductive structures (8) are arranged in regions on the electrically insulating layer (4).

Abstract: A radiation-emitting component includes a semiconductor layer stack having an active region that emits electromagnetic radiation, and at least one surface of the semiconductor layer stack or of an optical element that transmits the electromagnetic radiation wherein the surface has a normal vector, wherein on the at least one surface of the semiconductor layer stack or of the optical element through which the electromagnetic radiation passes, an antireflection layer is arranged such that, for a predetermined wavelength, it has a minimum reflection at a viewing angle relative to the normal vector of the surface at which an increase in a zonal luminous flux of the electromagnetic radiation has approximately a maximum.

Abstract: An economical miniaturized assembly and connection technology for LEDs and other optoelectronic modules is provided. A manufactured item in accordance with this technology includes a substrate with an optoelectronic component contacted in a planar manner.

Abstract: In an LED array comprising a plurality of radiation-emitting semiconductor chips each of which has a radiation outcoupling surface, the radiation emitted by the semiconductor chips being outcoupled substantially through said radiation outcoupling surface, and a cover body that is transparent to the emitted radiation, the transparent cover body comprises, on a surface facing toward the radiation outcoupling surfaces of the semiconductor chips, one or more conductive traces made of a conductive material that is transparent to the emitted radiation, and the semiconductor chips each comprise, on the radiation outcoupling surface, at least one electrical contact that is connected to the conductive trace or to at least one of the plurality of conductive traces. At least one luminescence conversion material is contained in the transparent cover body and/or applied in a layer to the cover body and/or the semiconductor chips.

Abstract: A radiation-emitting component (1) comprising a radiation source, a housing body (6), a radiation exit side (16), an underside (17) which is opposite the radiation exit side (16), a side surface (18) which connects the radiation exit side (16) and the underside (17), and at least one first contact region (2a, 3a). The first contact region (2a, 3a) extends along the side surface (18) and is in the form of a partial region of a carrier (23) that runs outside the housing body (6).

Abstract: A radiation-emitting and/or radiation-receiving semiconductor component comprising a radiation-emitting and/or radiation-receiving semiconductor chip, a molded plastic part which is transparent to an electromagnetic radiation to be emitted and/or received by the semiconductor component and by which the semiconductor chip is at least partially overmolded, and external electrical leads that are electrically connected to electrical contact areas of the semiconductor chip. The molded plastic part is made of a reaction-curing silicone molding compound. A method of making such a semiconductor component is also specified.

Abstract: A light-emitting diode arrangement comprising a plurality of semiconductor chips which are provided for emitting electromagnetic radiation from their front side (101) and which are fixed by their rear side (102)—opposite the front side—on a first main face (201) of a common carrier body (2), wherein the semiconductor chips consist of a respective substrateless semiconductor layer stack (1) and are fixed to the common carrier body without an auxiliary carrier, and to a method for producing such a light-emitting diode arrangement.

Abstract: The light source has an LED, preferably produced for the surface-mounting technique, embedded in a transparent material filling. A converter substance is integrated in the filling for the at least partial wavelength conversion of the light emitted by the LED. A lens is glued onto the transparent material filling. The material filling has a convex surface and the lens has a concave underside entering into a form fit with the convex surface of the material filling.

Abstract: An optoelectronic headlight which emits electromagnetic radiation is specified, which has a luminescence diode chip with at least two spatial emission regions or which has at least two luminescence diode chips each having at least one spatial emission region. The headlight is suitable in particular for a front headlight for motor vehicles. The emission regions, in a plan view of a main extension plane associated with them, are shaped differently, are of different sizes and/or are not shaped rectangularly and are differently oriented. Particularly preferably, the emission regions can be driven independently of one another. Methods for production of an optoelectronic headlight and a luminescence diode chip are furthermore specified.