Patents by Inventor Joseph C. Olson

Joseph C. Olson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for controlling critical dimension and roughness in resist features
    Patent number: 8354655
    Abstract: A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature.
    Type: Grant
    Filed: May 3, 2011
    Date of Patent: January 15, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ludovic Godet, Christopher J. Leavitt, Joseph C. Olson, Patrick M. Martin
  • Ion beam tuning
    Patent number: 8330125
    Abstract: A beam line ion implanter includes an ion source configured to generate an ion beam, a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin, and a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin. A method of ion beam tuning includes generating an ion beam, focusing the ion beam to a focal point positioned at a scan origin, and scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin.
    Type: Grant
    Filed: September 21, 2010
    Date of Patent: December 11, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Shengwu Chang, Joseph C. Olson, Frank Sinclair, Matthew P. McClellan
  • METHOD AND SYSTEM FOR CONTROLLING CRITICAL DIMENSION AND ROUGHNESS IN RESIST FEATURES
    Publication number: 20120280140
    Abstract: A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature.
    Type: Application
    Filed: May 3, 2011
    Publication date: November 8, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Ludovic Godet, Christopher J. Leavitt, Joseph C. Olson, Patrick M. Martin
  • APPARATUS AND METHOD FOR MULTIPLE SLOT ION IMPLANTATION
    Publication number: 20120248328
    Abstract: An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to receive a bias with respect to the plasma to attract ions across a plasma sheath toward the substrate. The system may also include an extraction plate arrangement comprising a multiplicity of different apertures each arranged to provide an ion beam having ions distributed over a range of angles of incidence on the workpiece, wherein a first ion beam extracted from a first aperture has a first beam profile that differs from a second ion beam extracted from a second aperture.
    Type: Application
    Filed: April 4, 2011
    Publication date: October 4, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Anthony Renau, Ludovic Godet, Timothy J. Miller, Joseph C. Olson
  • Mass analysis magnet for a ribbon beam
    Patent number: 8263941
    Abstract: A ribbon beam mass analyzer having a first and second solenoid coils and steel yoke arrangement. Each of the solenoid coils have a substantially “racetrack” configuration defining a space through which an ion ribbon beam travels. The solenoid coils are spaced apart along the direction of travel of the ribbon beam. Each of the solenoid coils generates a uniform magnetic field to accommodate mass resolution of wide ribbon beams to produce a desired image of ions generated from an ion source.
    Type: Grant
    Filed: November 11, 2009
    Date of Patent: September 11, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Victor Benveniste, James S. Buff, Frank Sinclair, Joseph C. Olson
  • Ion source
    Patent number: 8188445
    Abstract: An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.
    Type: Grant
    Filed: August 2, 2010
    Date of Patent: May 29, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ludovic Godet, Timothy J. Miller, Joseph C. Olson, Vikram Singh
  • PLATEN CONTROL
    Publication number: 20120088035
    Abstract: A system and method for maintain a desired degree of platen flatness is disclosed. A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.
    Type: Application
    Filed: October 11, 2011
    Publication date: April 12, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Shengwu Chang, Joseph C. Olson, Frank Sinclair, Matthew P. McClellan, Antonella Cucchetti
  • METHOD AND SYSTEM FOR MODIFYING PATTERNED PHOTORESIST USING MULTI-STEP ION IMPLANTATION
    Publication number: 20120083136
    Abstract: A method of reducing the roughness profile in a plurality of patterned resist features. Each patterned resist feature includes a first sidewall and a second sidewall opposite the first sidewall, wherein each patterned resist feature comprises a mid frequency line width roughness and a low frequency linewidth roughness. A plurality of ion exposure cycles are performed, wherein each ion exposure cycle comprises providing ions at a tilt angle of about five degrees or larger upon the first sidewall, and providing ions at a tilt angle of about five degrees or larger upon the second sidewall. Upon the performing of the plurality of ion exposure cycles the mid frequency and low frequency linewidth roughness are reduced.
    Type: Application
    Filed: October 1, 2010
    Publication date: April 5, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Ludovic Godet, Joseph C. Olson, Patrick M. Martin
  • Insulator system for a terminal structure of an ion implantation system
    Patent number: 8143604
    Abstract: An ion implantation system includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulator system. The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV)/inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box of the ion implantation system is also provided.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: March 27, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell Low, Piortr R. Lubicki, D. Jeffrey Lischer, Steve Krause, Eric Hermanson, Joseph C. Olson
  • ION BEAM TUNING
    Publication number: 20120068081
    Abstract: A beam line ion implanter includes an ion source configured to generate an ion beam, a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin, and a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin. A method of ion beam tuning includes generating an ion beam, focusing the ion beam to a focal point positioned at a scan origin, and scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin.
    Type: Application
    Filed: September 21, 2010
    Publication date: March 22, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCISTES, INC.
    Inventors: Shengwu Chang, Joseph C. Olson, Frank Sinclair, Matthew P. McClellan
  • Method and system for modifying patterned photoresist using multi-step ion implantation
    Patent number: 8133804
    Abstract: A method of reducing the roughness profile in a plurality of patterned resist features. Each patterned resist feature includes a first sidewall and a second sidewall opposite the first sidewall, wherein each patterned resist feature comprises a mid frequency line width roughness and a low frequency linewidth roughness. A plurality of ion exposure cycles are performed, wherein each ion exposure cycle comprises providing ions at a tilt angle of about five degrees or larger upon the first sidewall, and providing ions at a tilt angle of about five degrees or larger upon the second sidewall. Upon the performing of the plurality of ion exposure cycles the mid frequency and low frequency linewidth roughness are reduced.
    Type: Grant
    Filed: October 1, 2010
    Date of Patent: March 13, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ludovic Godet, Joseph C. Olson, Patrick M. Martin
  • UNIFORMITY CONTROL USING ION BEAM BLOCKERS
    Publication number: 20120056107
    Abstract: An ion beam is generated and the energy of this ion beam is changed from a first energy to a second energy through, for example, acceleration or deceleration. A portion of the ion beam is blocked after the energy is changed and the ion beam is implanted into a workpiece. A plurality of blockers may be used to block the beam. Each blocker may be attached to a drive unit configured to translate one of the blockers in a first direction.
    Type: Application
    Filed: September 8, 2010
    Publication date: March 8, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Daniel DISTASO, Joseph C. OLSON, Frank SINCLAIR
  • Apparatus for measuring beam characteristics and a method thereof
    Patent number: 8097866
    Abstract: An apparatus and a method for detecting particle beam characteristics are disclosed. In one embodiment, the apparatus may have a body including a first end and second end and at least one detector between the first and second ends. The apparatus may have a transparent state where a portion of the particles entering the apparatus may pass through the apparatus. The apparatus may also have a minimum transparency state where substantially all of the particles entering the apparatus may be prevented from passing through the apparatus and detected. Different transparency state may be achieved by rotating the apparatus or the detector contained therein. With the apparatus, it is possible to detect the beam properties such as the beam intensity, angle, parallelism, and a distribution of the particles in a particle beam.
    Type: Grant
    Filed: February 14, 2008
    Date of Patent: January 17, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Joseph C. Olson, Atul Gupta
  • Apparatus and system for controlling ion ribbon beam uniformity in an ion implanter
    Patent number: 8049192
    Abstract: An ion beam blocking array configured to provide a mechanical means for adjusting the beam current profile of an ion ribbon beam by blocking the beam current at one or more locations across the ribbon beam. The ion beam blocking array includes a drive motor, an axle connected to the drive motor and a plurality of profile wheels disposed along the axle where each of the profile wheels is configured to rotate when the axle rotates. Each of the profile wheels is disposed across a width of the ribbon beam and has a position corresponding to a location along the width of the beam.
    Type: Grant
    Filed: December 24, 2009
    Date of Patent: November 1, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Neil J. Bassom, Leo V. Klos, Joseph C. Olson
  • ION SOURCE
    Publication number: 20110186749
    Abstract: An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.
    Type: Application
    Filed: August 2, 2010
    Publication date: August 4, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Ludovic Godet, Timothy J. Miller, Joseph C. Olson, Vikram Singh
  • APPARATUS AND SYSTEM FOR CONTROLLING ION RIBBON BEAM UNIFORMITY IN AN ION IMPLANTER
    Publication number: 20110155929
    Abstract: An ion beam blocking array configured to provide a mechanical means for adjusting the beam current profile of an ion ribbon beam by blocking the beam current at one or more locations across the ribbon beam. The ion beam blocking array includes a drive motor, an axle connected to the drive motor and a plurality of profile wheels disposed along the axle where each of the profile wheels is configured to rotate when the axle rotates. Each of the profile wheels is disposed across a width of the ribbon beam and has a position corresponding to a location along the width of the beam.
    Type: Application
    Filed: December 24, 2009
    Publication date: June 30, 2011
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Neil J. Bassom, Leo V. Klos, Joseph C. Olson
  • APPARATUS AND METHOD FOR CONTROLLABLY IMPLANTING WORKPIECES
    Publication number: 20110124186
    Abstract: A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
    Type: Application
    Filed: November 16, 2010
    Publication date: May 26, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Anthony Renau, Ludovic Godet, Timothy J. Miller, Joseph C. Olson, Vikram Singh, James Buonodono, Frank Sinclair, Deepak A. Ramappa, Russell Low, Atul Gupta, Kevin M. Daniels
  • TECHNIQUES FOR MAKING HIGH VOLTAGE CONNECTIONS
    Publication number: 20110094862
    Abstract: Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.
    Type: Application
    Filed: January 3, 2011
    Publication date: April 28, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Douglas E. MAY, Kasegn D. Tekletsadik, Eric Hermanson, Piotr R. Lubicki, Russell J. Low, Joseph C. Olson, Stephen E. Krause
  • Technique for ion beam angle spread control
    Patent number: 7868305
    Abstract: A technique for ion beam angle spread control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles, thereby exposing the substrate surface to a controlled spread of ion beam incident angles.
    Type: Grant
    Filed: June 7, 2005
    Date of Patent: January 11, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Atul Gupta, Joseph C. Olson
  • Techniques for making high voltage connections
    Patent number: 7863531
    Abstract: Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.
    Type: Grant
    Filed: September 26, 2007
    Date of Patent: January 4, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Douglas E. May, Kasegn D. Tekletsadik, Eric Hermanson, Piotr R. Lubicki, Russell J. Low, Joseph C. Olson, Stephen E. Krause