Abstract: The invention provides a method, system, and apparatus for improving doping uniformity during ion implantation, particularly during a high-tilt ion implantation. In one embodiment, the invention provides a method for improving doping uniformity in a high-tilt ion implantation, the method comprising the steps of: positioning a wafer along an axis perpendicular to an ion beam scan plane to form an angle between a surface of the wafer and a plane perpendicular to the ion beam; measuring a current of the ion beam by moving a current detector across the ion beam in a path substantially coplanar with a surface of the wafer; and adjusting a doping uniformity of the ion beam current based on the measuring step.

Abstract: A method and apparatus are disclosed for improving space charge neutralization adjacent a magnet of an ion implanter by confining the electrons inside a magnetic region thereof to reduce electron losses and therefore improve the transport efficiency of a low energy beam. A magnetic pole member for a magnet of an ion implanter is provided that includes an outer surface having a plurality of magnetic field concentration members that form magnetic field concentrations adjacent the magnetic pole member. Electrons that encounter this increased magnetic field are repelled back along the same magnetic field line rather than allowed to escape. An analyzer magnet and ion implanter including the magnet pole are also provided so that a method of improving low energy ion beam space charge neutralization in an ion implanter is realized.

Abstract: Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.

Abstract: A beam density measurement system includes a shield, a beam sensor, and an actuator. The beam sensor is positioned downstream from the shield in a direction of travel of a beam. The beam sensor is configured to sense an intensity of the beam, and the beam sensor has a long dimension and a short dimension. The actuator translates the shield relative to the beam sensor, wherein the shield blocks at least a portion of the beam from the beam sensor as the shield is translated relative to the beam sensor, and wherein measured values of the intensity associated with changes in a position of the shield relative to the beam sensor are representative of a beam density distribution of the beam in a first direction defined by the long dimension of the beam sensor.

Abstract: An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.

Abstract: A system, method and program product for determining contamination of an ion beam are disclosed. In the event of an isobaric interference, or near isobaric interference between a contaminant ion and an expected ion of an ion beam, which is difficult to detect, it is possible to measure a third ion in the ion beam and estimate, based on the amount of the third ion measured, a relative amount of the contaminant ion compared to the expected ion. The estimated relative amount of the contaminant ion is used together with a measured mass resolution of the ion implantation system to determine whether an ion implantation process needs to be suspended.

Abstract: Techniques for providing ion source feed materials are disclosed. In one particular exemplary embodiment, the techniques may be realized as a container for supplying an ion source feed material. The container may comprise an internal cavity to be pre-filled with an ion source feed material. The container may also comprise an outer body configured to be removably loaded into a corresponding housing that is coupled to an ion source chamber via a nozzle assembly. The container may further comprise an outlet to seal in the pre-filled ion source feed material, the outlet being further configured to engage with the nozzle assembly to establish a flow path between the internal cavity and the ion source chamber. The container may be configured to be a disposable component.

Abstract: A technique for tuning an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for tuning an ion implanter system having multiple beam-line elements. The method may comprise establishing one or more relationships among the multiple beam-line elements. The method may also comprise adjusting the multiple beam-line elements in a coordinated manner, based at least in part on the one or more established relationships, to produce a desired beam output.

Abstract: A technique for ion beam angle spread control for advance applications is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control for advanced applications. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles. The method may also comprise varying an ion beam dose associated with at least one of the one or more ion beams based at least in part on the two or more incident angles, thereby exposing the substrate surface to a controlled ion beam angle-dose distribution.

Abstract: Techniques for providing a ribbon-shaped gas cluster ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for providing a ribbon-shaped gas cluster ion beam. The apparatus may comprise at least one nozzle configured to inject a source gas at a sufficient speed into a low-pressure vacuum space to form gas clusters. The apparatus may also comprise at least one ionizer that causes at least a portion of the gas clusters to be ionized. The apparatus may further comprise a beam-shaping mechanism that forms a ribbon-shaped gas cluster ion beam based on the ionized gas clusters.

Abstract: A technique for isocentric ion beam scanning is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for isocentric ion beam scanning. The apparatus may comprise an end station having a mechanism for holding and translating a wafer. The apparatus may also comprise a deflector that tilts an ion beam to a predetermined angle and directs the ion beam into the end station. The wafer may be translated with respect to the ion beam for isocentric scanning at least a portion of a surface of the wafer, and wherein the ion beam is maintained at the predetermined angle during isocentric scanning.

Abstract: An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.

Abstract: A method includes directing an ion beam at a plurality of differing incident angles with respect to a target surface of a substrate to implant ions into a plurality of portions of the substrate, wherein each one of the plurality of differing incident angles is associated with a different one of the plurality of portions, measuring angle sensitive data from each of the plurality of portions of the substrate, and determining an angle misalignment between the target surface and the ion beam incident on the target surface from the angle sensitive data. A method of determining a substrate miscut is also provided.

Abstract: An ion implanter includes a source of a stationary, planar ion beam, a set of beamline components that steer the ion beam along a normal beam path as determined by first operating parameter values, an end station that mechanically scans the wafer across the normal beam path, and control circuitry that responds to a glitch in the ion beam during implantation pass to (1) immediately alter an operating parameter of at least one of the beamline components to a second value to direct the ion beam away from the normal beam path and thereby cease implantation at an implantation transition location on the wafer, (2) subsequently move the wafer to an implantation-resuming position in which the implantation transition location on the wafer lies directly on the normal path of the ion beam, and (3) return the operating parameter to its first value to direct the ion beam along the normal beam path and resume ion implantation at the implantation transition location on the wafer.

Abstract: An ion implanter includes an ion beam generator configured to generate an ion beam, a scanner configured to scan the ion beam in at least one direction at a scan frequency, and a controller. The controller is configured to control the scan frequency in response to an operating parameter of the ion implanter. The operating parameter is at least partially dependent on the energy of the ion beam. The scan frequency is greater than a scan frequency threshold if the energy is greater than an energy threshold, and the scan frequency is less than the scan frequency threshold if the energy is less than the energy threshold.

Abstract: A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.

Abstract: A system, method and program product for improving uniformity and angle control wafers being implanted. A system is provided that includes an end station for positioning a wafer being implanted, comprising: a platen for holding the wafer, wherein the platen is rotatable to provide wafer rotation; a housing for holding the platen, wherein the housing is rotatable about a first orthogonal axis to provide a first type of wafer tilt; a structure for supporting the housing, wherein the structure is rotatable about a second orthogonal axis to provide a second type of wafer tilt; and a control system which, during an implant process of the wafer, causes wafer rotation, the first type of wafer tilt, and the second type of wafer tilt.

Abstract: A technique for improving ion implantation throughput and dose uniformity is disclosed. In one exemplary embodiment, a method for improving ion implantation throughput and dose uniformity may comprise measuring an ion beam density distribution in an ion beam. The method may also comprise calculating an ion dose distribution across a predetermined region of a workpiece that results from a scan velocity profile, wherein the scan velocity profile comprises a first component and a second component that control a relative movement between the ion beam and the workpiece in a first direction and a second direction respectively, and wherein the ion dose distribution is based at least in part on the ion beam density distribution. The method may further comprise adjusting at least one of the first component and the second component of the scan velocity profile to achieve a desired ion dose distribution in the predetermined region of the workpiece.

Abstract: A beam density measurement system includes a shield, a beam sensor, and an actuator. The beam sensor is positioned downstream from the shield in a direction of travel of a beam. The beam sensor is configured to sense an intensity of the beam, and the beam sensor has a long dimension and a short dimension. The actuator translates the shield relative to the beam sensor, wherein the shield blocks at least a portion of the beam from the beam sensor as the shield is translated relative to the beam sensor, and wherein measured values of the intensity associated with changes in a position of the shield relative to the beam sensor are representative of a beam density distribution of the beam in a first direction defined by the long dimension of the beam sensor.

Abstract: An ion beam current uniformity monitor, ion implanter and related method are disclosed. In one embodiment, the ion beam current uniformity monitor includes an ion beam current measurer including a plurality of measuring devices for measuring a current of an ion beam at a plurality of locations; and a controller for maintaining ion beam current uniformity based on the ion beam current measurements by the ion beam current measurer.