Patents by Inventor Joseph F. Brooks

Joseph F. Brooks has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor memory device structure
    Patent number: 11742307
    Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
    Type: Grant
    Filed: February 1, 2022
    Date of Patent: August 29, 2023
    Assignee: Ovonyx Memory Technology, LLC
    Inventors: John Moore, Joseph F. Brooks
  • SEMICONDUCTOR MEMORY DEVICE STRUCTURE
    Publication number: 20220157753
    Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
    Type: Application
    Filed: February 1, 2022
    Publication date: May 19, 2022
    Inventors: John Moore, Joseph F. Brooks
  • Semiconductor memory device structure
    Patent number: 11264344
    Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
    Type: Grant
    Filed: July 24, 2020
    Date of Patent: March 1, 2022
    Assignee: OVONYX MEMORY TECHNOLOGY, LLC
    Inventors: John Moore, Joseph F. Brooks
  • SEMICONDUCTOR MEMORY DEVICE STRUCTURE
    Publication number: 20200357761
    Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
    Type: Application
    Filed: July 24, 2020
    Publication date: November 12, 2020
    Inventors: John Moore, Joseph F. Brooks
  • Semiconductor memory device structure
    Patent number: 10756036
    Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: August 25, 2020
    Assignee: OVONYX MEMORY TECHNOLOGY, LLC
    Inventors: John Moore, Joseph F. Brooks
  • SEMICONDUCTOR MEMORY DEVICE STRUCTURE
    Publication number: 20190319001
    Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
    Type: Application
    Filed: April 19, 2018
    Publication date: October 17, 2019
    Inventors: John Moore, Joseph F. Brooks
  • Semiconductor memory device structure
    Patent number: 9966349
    Abstract: A semiconductor memory device and front-end method of fabricating nickel plated caps over bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication. In some examples, the method and device include one or more conductive and insulating layers formed over a substrate, and a plurality of memory cells over the conductive and insulating layers.
    Type: Grant
    Filed: January 23, 2017
    Date of Patent: May 8, 2018
    Assignee: OVONYX MEMORY TECHNOLOGY, LLC
    Inventors: John Moore, Joseph F. Brooks
  • MEMORY DEVICE STRUCTURE
    Publication number: 20170194275
    Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
    Type: Application
    Filed: January 23, 2017
    Publication date: July 6, 2017
    Inventors: John Moore, Joseph F. Brooks
  • Memory device structure
    Patent number: 9589918
    Abstract: A memory device structure includes circuitry formed over a substrate and at least one insulating portion formed over said circuitry, each of which includes a plurality of openings. The memory device also includes a plurality of electrical connections formed in respective openings of the plurality of openings of the at least one insulating portion, at least one bond pad formed within at least one of the at least one insulating portion, and a cap formed over the at least one bond pad.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: March 7, 2017
    Assignee: OVONYX MEMORY TECHNOLOGY, LLC
    Inventors: John Moore, Joseph F. Brooks
  • METHOD OF FORMING A MEMORY DEVICE
    Publication number: 20160027748
    Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
    Type: Application
    Filed: October 7, 2015
    Publication date: January 28, 2016
    Inventors: John Moore, Joseph F. Brooks
  • Method of forming a memory device
    Patent number: 9177927
    Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
    Type: Grant
    Filed: November 6, 2014
    Date of Patent: November 3, 2015
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: John Moore, Joseph F. Brooks
  • METHOD OF FORMING A MEMORY DEVICE
    Publication number: 20150061138
    Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
    Type: Application
    Filed: November 6, 2014
    Publication date: March 5, 2015
    Inventors: John Moore, Joseph F. Brooks
  • Method of forming a memory device
    Patent number: 8900945
    Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
    Type: Grant
    Filed: October 5, 2011
    Date of Patent: December 2, 2014
    Assignee: Micron Technology, Inc.
    Inventors: John Moore, Joseph F. Brooks
  • Access transistor for memory device
    Patent number: 8652903
    Abstract: An access transistor for a resistance variable memory element and methods of forming the same are provided. The access transistor has first and second source/drain regions and a channel region vertically stacked over the substrate. The access transistor is associated with at least one resistance variable memory element.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: February 18, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Jon Daley, Kristy A. Campbell, Joseph F. Brooks
  • FRONT-END PROCESSING OF NICKEL PLATED BOND PADS
    Publication number: 20120025379
    Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
    Type: Application
    Filed: October 5, 2011
    Publication date: February 2, 2012
    Inventors: John Moore, Joseph F. Brooks
  • Method of forming a bond pad
    Patent number: 8043961
    Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
    Type: Grant
    Filed: August 9, 2010
    Date of Patent: October 25, 2011
    Assignee: Micron Technology, Inc.
    Inventors: John Moore, Joseph F. Brooks
  • Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
    Patent number: 7940556
    Abstract: A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a chalcogenide glass region is provided with a plurality of alternating tin chalcogenide and metal layers proximate thereto. The method of forming the device comprises sputtering the alternating tin chalcogenide and metal layers.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: May 10, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Kristy A. Campbell, Jon Daley, Joseph F. Brooks
  • FRONT-END PROCESSING OF NICKEL PLATED BOND PADS
    Publication number: 20100304544
    Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
    Type: Application
    Filed: August 9, 2010
    Publication date: December 2, 2010
    Inventors: John Moore, Joseph F. Brooks
  • Front-end processing of nickel plated bond pads
    Patent number: 7795093
    Abstract: A front-end method of fabricating nickel plated caps over copper bond pads used in a memory device. The method provides protection of the bond pads from an oxidizing atmosphere without exposing sensitive structures in the memory device to the copper during fabrication.
    Type: Grant
    Filed: July 29, 2008
    Date of Patent: September 14, 2010
    Assignee: Micron Technology, Inc.
    Inventors: John Moore, Joseph F. Brooks
  • ACCESS TRANSISTOR FOR MEMORY DEVICE
    Publication number: 20100178741
    Abstract: An access transistor for a resistance variable memory element and methods of forming the same are provided. The access transistor has first and second source/drain regions and a channel region vertically stacked over the substrate. The access transistor is associated with at least one resistance variable memory element.
    Type: Application
    Filed: March 24, 2010
    Publication date: July 15, 2010
    Inventors: Jon Daley, Kristy A. Campbell, Joseph F. Brooks