Abstract: The present disclosure includes methods for operating a memory system, and memory systems. One such method includes updating transaction log information in a transaction log using write look ahead information; and updating a logical address (LA) table using the transaction log.

Abstract: The present disclosure includes methods and devices for stripe-based memory operation. One method embodiment includes writing data in a first stripe across a storage volume of a plurality of memory devices. A portion of the first stripe is updated by writing updated data in a portion of a second stripe across the storage volume of the plurality of memory devices. The portion of the first stripe is invalidated. The invalid portion of the first stripe and a remainder of the first stripe are maintained until the first stripe is reclaimed. Other methods and devices are also disclosed.

Abstract: A memory system and method uses stacked memory device dice coupled to each other and to a logic die. The logic die may include a timing correction system that is operable to control the timing at which the logic die receives signals, such as read data signals, from each of the memory device dice. The timing correction controls the timing of the read data or other signals by adjusting the timing of respective strobe signals, such as read strobe signals, that are applied to each of the memory device dice. The memory device dice may transmit read data to the memory device at a time determined by when it receives the respective strobe signals. The timing of each of the strobe signals is adjusted so that the read data or other signals from all of the memory device dice are received at the same time.

Abstract: A memory hub includes an on-board diagnostic engine through which diagnostic testing and evaluation of the memory system can be performed. The memory hub includes a link interface for receiving memory requests for access to memory devices of the memory system and a memory device interface coupled to the memory devices for coupling memory requests to the memory devices. A memory hub diagnostic engine is coupled through a switch to the link interface and the memory device interface to perform diagnostic testing of the memory system. The diagnostic engine includes a maintenance port that provides access to results of the diagnostic testing and through which diagnostic testing commands can be received.

Abstract: A layout for simultaneously sub-accessible memory modules is disclosed. In one embodiment, a memory module includes a printed circuit board having a plurality of sectors, each sector being electrically isolated from the other sectors and having a multi-layer structure. At least one memory device is attached to each sector, the memory devices being organized into a plurality of memory ranks. A driver is attached to the printed circuit board and is operatively coupled to the memory ranks. The driver is adapted to be coupled to a memory interface of the computer system. Because the sectors are electrically-isolated from adjacent sectors, the memory ranks are either individually or simultaneously, or both individually and simultaneously accessible by the driver so that one or more memory devices on a particular sector may be accessed at one time.

Abstract: A computer system includes a memory hub controller coupled to a plurality of memory modules. The memory hub controller includes a memory request queue that couples memory requests and corresponding request identifier to the memory modules. Each of the memory modules accesses memory devices based on the memory requests and generates response status signals from the request identifier when the corresponding memory request is serviced. These response status signals are coupled from the memory modules to the memory hub controller along with or separate from any read data. The memory hub controller uses the response status signal to control the coupling of memory requests to the memory modules and thereby control the number of outstanding memory requests in each of the memory modules.

Abstract: A system memory includes a memory hub controller, a memory module accessible by the memory hub controller, and an expansion module having a processor circuit coupled to the memory module and also having access to the memory module. The memory hub controller is coupled to the memory hub through a first portion of a memory bus on which the memory requests from the memory hub controller and memory responses from the memory hub are coupled. A second portion of the memory bus couples the memory hub to the processor circuit and is used to couple memory requests from the processor circuit and memory responses provided by the memory hub to the processor circuit.

Abstract: Integrated circuits, load boards and methods are disclosed, such as those associated with a memory testing system that includes an algorithmic pattern generator generating a pattern of command, address or write data digits according to an algorithm. In one such embodiment, the pattern of digits are applied to a frame generator that arranges the pattern of digits into a packet. The packet is then applied to a plurality of parallel-to-serial converters that convert the packet into a plurality of serial digits of a command/address packet or a write data packet, which are output through a plurality of bit lanes. The system might also include a plurality of serial-to-parallel converters receiving respective sets of digits of a read data packet through respective bit lanes. The read data packet is applied to a frame decomposer that extracts a pattern of read data digits from the packet. An error detecting circuit then determines if any of the received read data digits are erroneous.

Abstract: A computer system includes a controller coupled to a plurality of memory modules each of which includes a memory hub and a plurality of memory devices divided into a plurality of ranks. The memory hub is operable to configure the memory module to simultaneously address any number of ranks to operate in a high bandwidth mode, a high memory depth mode, or any combination of such modes.

Abstract: A processor-based electronic system includes several memory modules arranged in first and second ranks. The memory modules in the first rank are directly accessed by any of several processors, and the memory modules in the second rank are accessed by the processors through the memory modules in the first rank. The data bandwidth between the processors and the memory modules in the second rank is varied by varying the number of memory modules in the first rank that are used to access the memory module in the second set. Each of the memory modules includes several memory devices coupled to a memory hub. The memory hub includes a memory controller coupled to each memory device, a link interface coupled to a respective processor or memory module, and a cross bar switch coupling any of the memory controllers to any of the link interfaces.

Abstract: A memory system and method uses stacked memory device dice coupled to each other and to a logic die. The logic die may include a timing correction system that is operable to control the timing at which the logic die receives signals, such as read data signals, from each of the memory device dice. The timing correction controls the timing of the read data or other signals by adjusting the timing of respective strobe signals, such as read strobe signals, that are applied to each of the memory device dice. The memory device dice may transmit read data to the memory device at a time determined by when it receives the respective strobe signals. The timing of each of the strobe signals is adjusted so that the read data or other signals from all of the memory device dice are received at the same time.

Abstract: A memory hub including a memory test bridge circuit for testing memory devices. Test command packets are coupled from a tester to the memory hub responsive to a test clock signal having a test clock frequency. The test bridge circuit generates memory device command, address, and data signals in accordance with the test command packets, and the memory device command, address, and data signals are provided to a memory device under test that is coupled to the memory hub responsive to a memory device clock signal having a memory device clock frequency.

Abstract: A computer system includes a controller coupled to a plurality of memory modules each of which includes a memory hub and a plurality of memory devices divided into a plurality of ranks. The memory hub is operable to configure the memory module to simultaneously address any number of ranks to operate in a high bandwidth mode, a high memory depth mode, or any combination of such modes.

Abstract: A computer system includes a memory hub controller coupled to a plurality of memory modules. The memory hub controller includes a memory request queue that couples memory requests and corresponding request identifier to the memory modules. Each of the memory modules accesses memory devices based on the memory requests and generates response status signals from the request identifier when the corresponding memory request is serviced. These response status signals are coupled from the memory modules to the memory hub controller along with or separate from any read data. The memory hub controller uses the response status signal to control the coupling of memory requests to the memory modules and thereby control the number of outstanding memory requests in each of the memory modules.

Abstract: A memory test system injects phase jitter in memory command, address and write data signals in respective pin groups. A phase interpolator receiving a clock signal is provided for each of the pin groups to generate respective delayed clock signals. The phase shift produced by each of the phase interpolators is determined by delay control values, which are passed to the phase interpolators from respective memory arrays. Each of the memory arrays stores at each address a next address along with a delay control value. The next address is used to access the memory array to obtain next delay control value. The delayed clock signals are applied to a clock input of a respective set of registers for each pin group, and a data input of each of the registers receives one of the memory device signals in the respective pin group.

Abstract: A memory module includes several memory devices coupled to a memory hub. The memory hub includes several link interfaces coupled to respective processors, several memory controller coupled to respective memory devices, a cross-bar switch coupling any of the link interfaces to any of the memory controllers, a write buffer and read cache for each memory device and a self-test module. The self-test module includes a pattern generator producing write data having a predetermined pattern, and a flip-flop having a data input receiving the write data. A clock input of the flip-flop receives an internal clock signal from a delay line that receives a variable frequency clock generator. Read data are coupled from the memory devices and their pattern compared to the write data pattern. The delay of the delay line and frequency of the clock signal can be varied to test the speed margins of the memory devices.

Abstract: An improved technique and associated apparatus for timing calibration of a logic device is provided. A calibration test pattern is transferred to a logic device first at a data rate slower than normal operating speed to ensure correct capture of the pattern at the device to be calibrated. Once the pattern is correctly captured and stored, the test pattern is transmitted to the logic device at the normal operating data rate to perform timing calibration. The improved technique and apparatus permits the use of any pattern of bits as a calibration test pattern, programmable by the user or using easily-interchangeable hardware.

Abstract: A computer system includes a memory hub controller coupled to a plurality of memory modules. The memory hub controller includes a memory request queue that couples memory requests and corresponding request identifier to the memory modules. Each of the memory modules accesses memory devices based on the memory requests and generates response status signals from the request identifier when the corresponding memory request is serviced. These response status signals are coupled from the memory modules to the memory hub controller along with or separate from any read data. The memory hub controller uses the response status signal to control the coupling of memory requests to the memory modules and thereby control the number of outstanding memory requests in each of the memory modules.

Abstract: Memory access requests are successively received in a memory request queue of a memory controller. Any conflicts or potential delays between temporally proximate requests that would occur if the memory access requests were to be executed in the received order are detected, and the received order of the memory access requests is rearranged to avoid or minimize the conflicts or delays and to optimize the flow of data to and from the memory data bus. The memory access requests are executed in the reordered sequence, while the originally received order of the requests is tracked. After execution, data read from the memory device by the execution of the read-type memory access requests are transferred to the respective requestors in the order in which the read requests were originally received.

Abstract: A memory module includes several memory devices coupled to a memory hub. The memory hub includes several link interfaces coupled to respective processors, several memory controller coupled to respective memory devices, a cross-bar switch coupling any of the link interfaces to any of the memory controllers, a write buffer and read cache for each memory device and a self-test module. The self-test module includes a pattern generator producing write data having a predetermined pattern, and a flip-flop having a data input receiving the write data. A clock input of the flip-flop receives an internal clock signal from a delay line that receives a variable frequency clock generator. Read data are coupled from the memory devices and their pattern compared to the write data pattern. The delay of the delay line and frequency of the clock signal can be varied to test the speed margins of the memory devices.