Abstract: Provided are a low-cost semiconductor device manufacturing method and a semiconductor device made using the method. The method includes forming multiple body regions in a semiconductor substrate, forming multiple gate insulating layers and multiple gate electrodes in the body region; implementing a blanket ion implantation in an entire surface of the substrate to form a low concentration doping region (LDD region) in the body region without a mask, forming a spacer at a side wall of the gate electrode, and implementing a high concentration ion implantation to form a high concentration source region and a high concentration drain region around the LDD region. According to the examples, devices have favorable electrical characteristics and at the same time, manufacturing costs are reduced. Since, when forming high concentration source region and drain regions, tilt and rotation co-implants are applied, an LDD masking step is potentially omitted.

Abstract: The present disclosure relates to a vertical bipolar junction transistor. A vertical bipolar junction transistor includes a high concentration doping region emitter terminal disposed on a semiconductor substrate; a high concentration doping region collector terminal disposed on a semiconductor substrate; a high concentration doping region base terminal disposed between the emitter terminal and the collector terminal; a drift region having a first doping concentration surrounding the emitter terminal and being deeper than either the base terminal or the collector terminal; a base layer disposed below the drift region; a collector layer in contact with the base layer, the collector layer having a second doping concentration higher than the first doping concentration. The manufacturing cost of the vertical bipolar junction transistor can be lowered and a current gain can be elevated using a low-cost BCD process.

Abstract: A semiconductor device includes a second conductive-type well configured over a substrate, a first conductive-type body region configured over the second conductive-type well, a gate electrode which overlaps a portion of the first conductive-type body region, and a first conductive-type channel extension region formed over the substrate and which overlaps a portion of the gate electrode.

Abstract: A spindle motor includes a sleeve fixedly installed on a base member; a shaft rotatably supported by the sleeve; a rotor hub fixedly installed on an upper end portion of the shaft to rotate together therewith; and a thrust plate fixedly coupled to the sleeve so as to be disposed to face a lower surface of the rotor hub and having a ring shape. The thrust plate includes a channel part formed therein in order to reduce a difference in pressure between a bearing clearance on an inner side thereof and a bearing clearance on an outer side thereof. The channel part is configured of grooves formed in a lower surface of the thrust plate and an inner peripheral surface thereof.

Abstract: There is provided a hydrodynamic bearing assembly including: a shaft; a sleeve disposed to be spaced apart from the shaft by a predetermined interval to form a bearing clearance therewith; and a thrust member installed on the shaft, wherein at least one of the shaft, the sleeve, and the thrust member is provided with a dynamic pressure groove for generating fluid dynamic pressure in a lubricating fluid provided in the bearing clearance, and one side of a portion of the dynamic pressure groove into which the lubricating fluid is introduced is provided with a pressure reduction preventing groove for suppressing a reduction in pressure generated at the time of introduction of the lubricating fluid.

Abstract: A semiconductor device includes: an active region configured over a substrate to include a first conductive-type first deep well and second conductive-type second deep well forming a junction therebetween. A gate electrode extends across the junction and over a portion of first conductive-type first deep well and a portion of the second conductive-type second deep well. A second conductive-type source region is in the first conductive-type first deep well at one side of the gate electrode whereas a second conductive-type drain region is in the second conductive-type second deep well on another side of the gate electrode. A first conductive-type impurity region is in the first conductive-type first deep well surrounding the second conductive-type source region and extending toward the junction so as to partially overlap with the gate electrode and/or partially overlap with the second conductive-type source region.

Abstract: Disclosed is a skin massage device, the proposed idea capable of a skin massage device of scrubbing a skin applied with a massage cream, then giving physical stimulus on the skin at a massage thus helping the relaxation of muscles and activating metabolism to serve an elastic, healthy skin, characterized in that an operation device 15 to reciprocally translate a beating member 21 back and forth is installed at a rotating shaft 14 of a drive motor 15 to which an electric energy of a battery 100 is selectively supplied/blocked according to change of on/off of a rotary switch 12, comprised of the beating member 21 inflicting physical stimulus while interworking with the operation device 15.

Abstract: A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end portion thereof extending over the isolation layer.

Abstract: A spindle motor includes a stator including a base member having a stator core installed thereon; and a rotor including a rotor hub in which a driving magnet facing the stator core is installed. The rotor hub includes a disk-shaped body, a magnet mounting part extended from edge of the body in a downward axial direction and having the driving magnet installed on an inner surface thereof, and a disk support part extended from the magnet mounting part in radial direction. A magnetic center of the driving magnet is higher than that of the stator core in the axial direction in order to generate force directed in the downward axial direction through interaction with the stator core. The magnet mounting part includes a vortex generation suppressing part disposed on a lower edge portion thereof to decrease noise and vibrations generated by flow of air during rotation of the rotor hub.

Abstract: There is provided a spindle motor including a stator including a base member in which a stator core is fixedly installed, and a rotor including a rotor hub in which a driving magnet disposed to face the stator core is installed, wherein the driving magnet is installed on a magnet mounting part provided in the rotor hub so that the magnetic center thereof in an axial direction is disposed in a position higher than that of the magnetic center of the stator core in the axial direction in order to generate force directed in a downward axial direction by interaction with the stator core, and the stator core is formed of a soft magnetic material and includes protrusion parts formed at a front end portion thereof disposed to face the driving magnet and extended therefrom in the axial direction.

Abstract: A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end portion thereof extending over the isolation layer.

Abstract: There is provided a recording disk driving device including a rotor including a rotor hub on which at least one disk is installed, a stator for rotatably supporting the rotor, and a housing including a base member on which the stator is fixedly installed, and an upper case coupled to the base member to form an internal space, wherein the housing is provided with a contact preventing portion formed on a surface of the housing, facing the disk.

Abstract: There are provided a motor and a hard disk drive including the same. The motor includes: a sleeve supporting a shaft with a lubricating fluid; and a rotor fixed to the shaft, rotating together therewith, and having a surface facing the sleeve, wherein one surface of the surface of the rotor facing the sleeve and a surface of the sleeve facing the rotor is provided with a thrust dynamic pressure groove, and the other surface of the surface of the rotor facing the sleeve and the surface of the sleeve facing the rotor is provided with an extension groove extended to the outside of the thrust dynamic pressure groove so as to partially face the thrust dynamic pressure groove.

Abstract: A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.

Abstract: There are provided a hydrodynamic bearing assembly and a spindle motor including the same. The hydrodynamic bearing assembly includes: a sleeve including a shaft hole to have a shaft rotatably installed therein; and a cover member covering the shaft hole at a lower portion of the shaft hole in an axial direction, wherein an inner surface of the sleeve is provided with depression parts depressed in an outer diameter direction between upper and lower portions of the sleeve and portions in which radial bearings are formed, such that the portions in which the radial bearings are formed are provided with bearing closure adhesion parts allowing the portions in which the radial bearings are formed to be closer to the shaft than portions other than the portions in which the radial bearings are formed.

Abstract: A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.

Abstract: There is provided a spindle motor including: a shaft having a lower end portion fixed to one of a base member and a lower thrust member and provided with an installation groove depressed downwardly from an upper surface thereof; an upper thrust member including an insertion part inserted into and fixed to the installation groove of the shaft; and a rotating part forming a bearing clearance together with the upper and lower thrust members and the shaft and rotating around the shaft.

Abstract: A semiconductor device includes a second conductive-type well configured over a substrate, a first conductive-type body region configured over the second conductive-type well, a gate electrode which overlaps a portion of the first conductive-type body region, and a first conductive-type channel extension region formed over the substrate and which overlaps a portion of the gate electrode.

Abstract: A semiconductor device includes: an active region configured over a substrate to include a first conductive-type first deep well and second conductive-type second deep well forming a junction therebetween. A gate electrode extends across the junction and over a portion of first conductive-type first deep well and a portion of the second conductive-type second deep well. A second conductive-type source region is in the first conductive-type first deep well at one side of the gate electrode whereas a second conductive-type drain region is in the second conductive-type second deep well on another side of the gate electrode. A first conductive-type impurity region is in the first conductive-type first deep well surrounding the second conductive-type source region and extending toward the junction so as to partially overlap with the gate electrode and/or partially overlap with the second conductive-type source region.

Abstract: A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.