Abstract: There is provided a recording disk driving device including a rotor including a rotor hub on which at least one disk is installed, a stator for rotatably supporting the rotor, and a housing including a base member on which the stator is fixedly installed, and an upper case coupled to the base member to form an internal space, wherein the housing is provided with a contact preventing portion formed on a surface of the housing, facing the disk.

Abstract: There are provided a motor and a hard disk drive including the same. The motor includes: a sleeve supporting a shaft with a lubricating fluid; and a rotor fixed to the shaft, rotating together therewith, and having a surface facing the sleeve, wherein one surface of the surface of the rotor facing the sleeve and a surface of the sleeve facing the rotor is provided with a thrust dynamic pressure groove, and the other surface of the surface of the rotor facing the sleeve and the surface of the sleeve facing the rotor is provided with an extension groove extended to the outside of the thrust dynamic pressure groove so as to partially face the thrust dynamic pressure groove.

Abstract: A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.

Abstract: There are provided a hydrodynamic bearing assembly and a spindle motor including the same. The hydrodynamic bearing assembly includes: a sleeve including a shaft hole to have a shaft rotatably installed therein; and a cover member covering the shaft hole at a lower portion of the shaft hole in an axial direction, wherein an inner surface of the sleeve is provided with depression parts depressed in an outer diameter direction between upper and lower portions of the sleeve and portions in which radial bearings are formed, such that the portions in which the radial bearings are formed are provided with bearing closure adhesion parts allowing the portions in which the radial bearings are formed to be closer to the shaft than portions other than the portions in which the radial bearings are formed.

Abstract: A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.

Abstract: There is provided a spindle motor including: a shaft having a lower end portion fixed to one of a base member and a lower thrust member and provided with an installation groove depressed downwardly from an upper surface thereof; an upper thrust member including an insertion part inserted into and fixed to the installation groove of the shaft; and a rotating part forming a bearing clearance together with the upper and lower thrust members and the shaft and rotating around the shaft.

Abstract: A semiconductor device includes a second conductive-type well configured over a substrate, a first conductive-type body region configured over the second conductive-type well, a gate electrode which overlaps a portion of the first conductive-type body region, and a first conductive-type channel extension region formed over the substrate and which overlaps a portion of the gate electrode.

Abstract: A semiconductor device includes: an active region configured over a substrate to include a first conductive-type first deep well and second conductive-type second deep well forming a junction therebetween. A gate electrode extends across the junction and over a portion of first conductive-type first deep well and a portion of the second conductive-type second deep well. A second conductive-type source region is in the first conductive-type first deep well at one side of the gate electrode whereas a second conductive-type drain region is in the second conductive-type second deep well on another side of the gate electrode. A first conductive-type impurity region is in the first conductive-type first deep well surrounding the second conductive-type source region and extending toward the junction so as to partially overlap with the gate electrode and/or partially overlap with the second conductive-type source region.

Abstract: A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.

Abstract: A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.

Abstract: There is provided a hydrodynamic bearing assembly including: a shaft; a sleeve disposed to be spaced apart from the shaft by a predetermined interval to form a bearing clearance therewith; and a thrust member installed on the shaft, wherein at least one of the shaft, the sleeve, and the thrust member is provided with a dynamic pressure groove for generating fluid dynamic pressure in a lubricating fluid provided in the bearing clearance, and one side of a portion of the dynamic pressure groove into which the lubricating fluid is introduced is provided with a pressure reduction preventing groove for suppressing a reduction in pressure generated at the time of introduction of the lubricating fluid.

Abstract: There are provided a hydrodynamic bearing assembly and a spindle motor including the same. The hydrodynamic bearing assembly includes: a sleeve including a shaft hole to have a shaft rotatably installed therein; and a cover member covering the shaft hole at a lower portion of the shaft hole in an axial direction, wherein an inner surface of the sleeve is provided with depression parts depressed in an outer diameter direction between upper and lower portions of the sleeve and portions in which radial bearings are formed, such that the portions in which the radial bearings are formed are provided with bearing closure adhesion parts allowing the portions in which the radial bearings are formed to be closer to the shaft than portions other than the portions in which the radial bearings are formed.

Abstract: Disclosed herein is a spindle motor including: a shaft forming the center of rotation of the motor; a sleeve receiving the shaft therein and rotatably supporting the shaft; a thrust plate press-fitted into the shaft so as to be perpendicular to an axial direction of the shaft; and a sealing cap spaced apart from the thrust plate in an upward axial direction and bent to enclose an outer side surface of the sleeve to thereby be coupled to the thrust plate, wherein the sealing cap is provided with a sealing part having concave parts and convex parts alternately formed along an inner peripheral surface thereof in a radial direction.

Abstract: There are provided a base structure for a device such as a hard disk drive and a hard disk drive having the same. The base structure includes: a base body including components mounted thereon and made of a non-aluminum material; and a base reinforcing part attached to the base body as an additional piece. More specifically, the base body is provided by press-molding a steel sheet and the base reinforcing part is provided by press-molding a steel sheet or is provided as a reinforcing plate separately attached to an outer surface of the base body, and the base structure further includes a reinforcing part processing member additionally provided in the reinforcing plate. The base structure for a device such as a hard disk drive and the like, in which the rigidity thereof is secured or the weight thereof is reduced by using various base reinforcing parts and reinforcing part processing members while the manufacturing costs of the base structure are reduced.

Abstract: A semiconductor device includes: an active region configured over a substrate to include a first conductive-type first deep well and second conductive-type second deep well forming a junction therebetween. A gate electrode extends across the junction and over a portion of first conductive-type first deep well and a portion of the second conductive-type second deep well. A second conductive-type source region is in the first conductive-type first deep well at one side of the gate electrode whereas a second conductive-type drain region is in the second conductive-type second deep well on another side of the gate electrode. A first conductive-type impurity region is in the first conductive-type first deep well surrounding the second conductive-type source region and extending toward the junction so as to partially overlap with the gate electrode and/or partially overlap with the second conductive-type source region.

Abstract: Disclosed herein is a spindle motor including: a shaft; a sleeve supporting the shaft; a hub including the shaft coupled to the center of rotation thereof; a sealing member including an operating fluid provided between the shaft and the sleeve and formed to be spaced apart from an outer peripheral surface of the sleeve; an oil sealing part including an oil interface formed between an inner peripheral surface of the sealing member and the outer peripheral surface of the sleeve facing each other, and a sealing surface layer formed on an outer side of the oil interface. The sealing surface layer is formed from an inner side of the oil interface formed in the oil sealing part of a fluid dynamic pressure bearing part toward the outer side thereof, thereby making it possible to improve an oil sealing effect in the oil interface.

Abstract: A motor includes a rotating member including a first magnet, and a fixed member supporting the rotating member and including a second magnet configuring a magnetic bearing part together with the first magnet. A gap between the first and second magnets is larger than at least one of a contact prevention gap between the rotating member and the fixed member and a clearance between a shaft and a sleeve supporting the shaft.

Abstract: The semiconductor device includes: a first conductive-type first well and a second conductive-type second well configured over a substrate to contact each other; a second conductive-type anti-diffusion region configured in an interface where the first conductive-type first well contacts the second conductive-type second well over the substrate; and a gate electrode configured to simultaneously cross the first conductive-type first well, the second conductive-type anti-diffusion region, and the second conductive-type second well over the substrate.

Abstract: There is provided a stator core assembly including: a body having a circular ring shape; a teeth part including a plurality of teeth extended from the body; and a plurality of coils wound around the plurality of teeth, wherein the coils are wound n+3k times around any one of the plurality of teeth and wound n times around the remaining teeth.

Abstract: A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.