Abstract: Embodiments of the present disclosure generally relate to a metal shield to be used in a PECVD chamber. The metal shield includes a substrate support portion and a shaft portion. The shaft portion includes a tubular wall having a wall thickness. The tubular wall has a supply channel of a coolant channel and a return channel of the coolant channel embedded therein. Each of the supply channel and the return channel is a helix in the tubular wall. The helical supply channel and the helical return channel have the same direction of rotation and are parallel to each other. The supply channel and the return channel are interleaved in the tubular wall. With the supply channel and return channel interleaved in the metal shield, the thermal gradient in the metal shield is reduced.

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Abstract: A method and apparatus for a pedestal is provided. In one embodiment, the pedestal includes a body comprising a ceramic material having a flange, one or more heating elements embedded in the body, a first shaft coupled to the flange, and a second shaft coupled to the first shaft; wherein the second shaft includes a plurality of fluid channels formed therein that terminate in the second shaft.

Abstract: Embodiments described herein relate to ground path systems providing a shorter and symmetrical path for radio frequency (RF) energy to propagate to a ground to reduce generation of the parasitic plasma. The ground path system bifurcates the processing volume of the chamber to form an inner volume that isolates an outer volume of the processing volume.

Abstract: Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.

Abstract: A substrate transport system is disclosed and includes a chamber having an interior wall, a planar motor disposed on the interior wall, and a substrate carrier magnetically coupled to the planar motor. The substrate carrier comprises a base and a substrate supporting surface coupled to a support member extending from the base in a cantilevered orientation.

Abstract: Methods and apparatus for forming thin films are described. A semiconductor processing chamber includes a substrate support, an electrode opposite the substrate support, the electrode having a gas inlet in a peripheral region thereof, and an edge ring disposed around a peripheral region of the substrate support, the edge ring having a first barrier and a second barrier, wherein each of the first barrier and the second barrier mates with a recess in the electrode. The edge ring provides a gas flow path through a processing zone between the substrate support and the electrode that is substantially parallel to the upper surface of the substrate support. The electrode may be powered to enhance formation of a film on a substrate.

Abstract: Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).

Abstract: A method and apparatus for forming a flowable film are described. The method includes providing an oxygen free precursor gas mixture to a processing chamber containing a substrate. The oxygen free precursor gas is activated by exposure to UV radiation in the processing chamber. Molecular fragments resulting from the UV activation are encouraged to deposit on the substrate to form a flowable film on the substrate. The substrate may be cooled to encourage deposition. The film may be hardened by heating and/or by further exposure to UV radiation.

Abstract: Embodiments provide a plasma processing apparatus, substrate support assembly, and method of controlling a plasma process. The apparatus and substrate support assembly include a substrate support pedestal, a tuning assembly that includes a tuning electrode that is disposed in the pedestal and electrically coupled to a radio frequency (RF) tuner, and a heating assembly that includes one or more heating elements disposed within the pedestal for controlling a temperature profile of the substrate, where at least one of the heating elements is electrically coupled to an RF filter circuit that includes a first inductor configured in parallel with a formed capacitance of the first inductor to ground. The high impedance of the RF filters can be achieved by tuning the resonance of the RF filter circuit, which results in less RF leakage and better substrate processing results.

Abstract: The implementations described herein generally relate to steps for the dynamic, real-time control of the process spacing between a substrate support and a gas distribution medium during a deposition process. Multiple dimensional degrees of freedom are utilized to change the angle and spacing of a substrate plane with respect to the gas distributing medium at any time during the deposition process. As such, the substrate and/or substrate support may be leveled, tilted, swiveled, wobbled, and/or moved during the deposition process to achieve improved film uniformity. Furthermore, the independent tuning of each layer may be had due to continuous variations in the leveling of the substrate plane with respect to the showerhead to average effective deposition on the substrate, thus improving overall stack deposition performance.

Abstract: Alignment systems employing actuators provide relative displacement between lid assemblies of process chambers and substrates, and related methods are disclosed. A process chamber includes chamber walls defining a process volume in which a substrate may be placed and the walls support a lid assembly of the process chamber. The lid assembly contains at least one of an energy source and a process gas dispenser. Moreover, an alignment system may include at least one each of a bracket, an interface member, and an actuator. By attaching the bracket to the chamber wall and securing the interface member to the lid assembly, the actuator may communicate with the bracket and the interface member to provide relative displacement between the chamber wall and the lid assembly. In this manner, the lid assembly may be positioned relative to the substrate to improve process uniformity across the substrate within the process chamber.

Abstract: A method and apparatus for heating a substrate in a chamber are provided. an apparatus for positioning a substrate in a processing chamber. In one embodiment, the apparatus comprises a substrate support assembly having a support surface adapted to receive the substrate and a plurality of centering fingers for supporting the substrate at a distance parallel to the support surface and for centering the substrate relative to a reference axis substantially perpendicular to the support surface. The plurality of the centering fingers are movably disposed along a periphery of the support surface, and each of the plurality of centering fingers comprises a first end portion for either contacting or supporting a peripheral edge of the substrate.

Abstract: A method and apparatus for processing a semiconductor is disclosed herein. In one embodiment, a processing system for semiconductor processing is disclosed. The processing chamber includes two transfer chambers, a processing chamber, and a rotation module. The processing chamber is coupled to the transfer chamber. The rotation module is positioned between the transfer chambers. The rotation module is configured to rotate the substrate. The transfer chambers are configured to transfer the substrate between the processing chamber and the transfer chamber. In another embodiment, a method for processing a substrate on the apparatus is disclosed herein.

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

Abstract: Embodiments of the present disclosure provide an electrostatic chuck for maintaining a flatness of a substrate being processed in a plasma reactor at high temperatures. In one embodiment, the electrostatic chuck comprises a chuck body coupled to a support stem, the chuck body having a substrate supporting surface, and the chuck body has a volume resistivity value of about 1×107 ohm-cm to about 1×1015 ohm-cm in a temperature of about 250° C. to about 700° C., and an electrode embedded in the body, the electrode is coupled to a power supply. In one example, the chuck body is composed of an aluminum nitride material which has been observed to be able to optimize chucking performance around 600° C. or above during a deposition or etch process, or any other process that employ both high operating temperature and substrate clamping features.

Abstract: Implementations of the present disclosure generally relate to an improved factory interface that is coupled to an on-board metrology housing configured for measuring film properties of a substrate. In one implementation, an apparatus comprises a factory interface, and a metrology housing removably coupled to the factory interface through a load port, the metrology housing comprises an on-board metrology assembly for measuring properties of a substrate to be transferred into the metrology housing.

Abstract: A processing chamber is described having a gas evacuation flow path from the center to the edge of the chamber. Purge gas is introduced at an opening around a support shaft that supports a heater plate. A shaft wall around the opening directs the purge gas along the support shaft to an evacuation plenum. Gas flows from the evacuation plenum through an opening in a second plate near the shaft wall and along the chamber bottom to an opening coupled to a vacuum source. Purge gas is also directed to the slit valve.

Abstract: Embodiments of the present disclosure generally provide apparatus and methods for monitoring one or more process parameters, such as temperature of substrate support, at various locations. One embodiment of the present disclosure provides a sensor column for measuring one or more parameters in a processing chamber. The sensor column includes a tip for contacting a chamber component being measured, a protective tube having an inner volume extending from a first end and second end, wherein the tip is attached to the first end of the protective tube and seals the protective tube at the first end, and a sensor disposed near the tip. The inner volume of the protective tube houses connectors of the sensor, and the tip is positioned in the processing chamber through an opening of the processing chamber during operation.

Abstract: Implementations described herein protect a substrate support from corrosive cleaning gases used at high temperatures. In one embodiment, a substrate support has a shaft having an outer wall. The substrate support has a heater. The heater has a body having a top surface, a side surface and a bottom surface extending from the outer wall of the shaft. The top surface is configured to support a substrate during plasma processing of the substrate. A covering is provided for at least two of the top surface, side surface and bottom surface. The covering is selected to resist corrosion of the body at temperatures in excess of about 400 degrees Celsius. A sleeve circumscribing the shaft, the sleeve and the outer wall of the shaft forming a space therebetween, the space adapted to flow a purge gas therethrough in a direction toward the body.