Patents by Inventor Juan Carlos Rocha

Juan Carlos Rocha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Edge hump reduction faceplate by plasma modulation
    Patent number: 10100408
    Abstract: Embodiments described herein relate to a faceplate for improving film uniformity. A semiconductor processing apparatus includes a pedestal, an edge ring and a faceplate having distinct regions with differing hole densities. The faceplate has an inner region and an outer region which surrounds the inner region. The inner region has a greater density of holes formed therethrough when compared to the outer region. The inner region is sized to correspond with a substrate being processed while the outer region is sized to correspond with the edge ring.
    Type: Grant
    Filed: January 12, 2015
    Date of Patent: October 16, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sungwon Ha, Kwangduk Douglas Lee, Ganesh Balasubramanian, Juan Carlos Rocha-Alvarez, Martin Jay Seamons, Ziqing Duan, Zheng John Ye, Bok Hoen Kim, Lei Jing, Ngoc Le, Ndanka Mukuti
  • Method and system for supplying a cleaning gas into a process chamber
    Patent number: 10094486
    Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.
    Type: Grant
    Filed: November 4, 2015
    Date of Patent: October 9, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ramprakash Sankarakrishnan, Dale R. Du Bois, Ganesh Balasubramanian, Karthik Janakiraman, Juan Carlos Rocha-Alvarez, Thomas Nowak, Visweswaren Sivaramakrishnan, Hichem M'Saad
  • Multi-zone pedestal for plasma processing
    Patent number: 10090187
    Abstract: A method and apparatus for a heated pedestal is provided. In one embodiment, the heated pedestal includes a body comprising a ceramic material, a plurality of heating elements encapsulated within the body, and one or more grooves formed in a surface of the body adjacent each of the plurality of heating elements, at least one side of the grooves being bounded by a ceramic plate.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: October 2, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Xing Lin, Bozhi Yang, Jianhua Zhou, Dale R. Dubois, Juan Carlos Rocha-Alvarez, Ramprakash Sankarakrishnan
  • Auto frequency tuned remote plasma source
    Patent number: 10083818
    Abstract: A remote plasma source is disclosed that includes a core element and a first plasma block including one or more surfaces at least partially enclosing an annular-shaped plasma generating region that is disposed around a first portion of the core element. The remote plasma source further comprises one or more coils disposed around respective second portions of the core element. The remote plasma source further includes an RF power source configured to drive a RF power signal onto the one or more coils that is based on a determined impedance of the plasma generating region. Energy from the RF power signal is coupled with the plasma generating region via the one or more coils and the core element.
    Type: Grant
    Filed: September 23, 2015
    Date of Patent: September 25, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Abdul Aziz Khaja, Mohamad A. Ayoub, Ramesh Bokka, Jay D. Pinson, II, Juan Carlos Rocha-Alvarez
  • PECVD PROCESS
    Publication number: 20180258535
    Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
    Type: Application
    Filed: May 10, 2018
    Publication date: September 13, 2018
    Inventors: Nagarajan RAJAGOPALAN, Xinhai HAN, Michael Wenyoung TSIANG, Masaki OGATA, Zhijun JIANG, Juan Carlos ROCHA-ALVAREZ, Thomas NOWAK, Jianhua ZHOU, Ramprakash SANKARAKRISHNAN, Amit Kumar BANSAL, Jeongmin LEE, Todd EGAN, Edward BUDIARTO, Dmitriy PANASYUK, Terrance Y. LEE, Jian J. CHEN, Mohamad A. AYOUB, Heung Lak PARK, Patrick REILLY, Shahid SHAIKH, Bok Hoen KIM, Sergey STARIK, Ganesh BALASUBRAMANIAN
  • PECVD process
    Patent number: 10060032
    Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: August 28, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Wenyoung Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik, Ganesh Balasubramanian
  • Semiconductor process equipment
    Patent number: 10056279
    Abstract: A system for processing a substrate is provided including a first planar motor, a substrate carrier, a first processing chamber, and a first lift. The first planar motor includes a first arrangement of coils disposed along a first horizontal direction, a top surface parallel to the first horizontal direction, a first side, a second side. The substrate carrier has a substrate supporting surface parallel to the first horizontal direction. The first processing chamber has an opening to receive a substrate disposed on the substrate carrier. The first lift includes a second planar motor having a second arrangement of coils disposed along the first horizontal direction. A top surface top surface of the second planar motor is parallel to the first horizontal direction. The first lift is configured to move the top surface of the second planar motor between a first vertical location and a second vertical location.
    Type: Grant
    Filed: January 22, 2016
    Date of Patent: August 21, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Karthik Janakiraman, Hari K. Ponnekanti, Juan Carlos Rocha, Mukund Srinivasan
  • METHOD AND APPARATUS OF REMOTE PLASMAS FLOWABLE CVD CHAMBER
    Publication number: 20180230597
    Abstract: Embodiments disclosed herein generally relate to a plasma processing system. The plasma processing system includes a processing chamber, a chamber seasoning system, and a remote plasma cleaning system. The processing chamber has a chamber body defining a processing region and a plasma field. The chamber seasoning system is coupled to the processing chamber. The chamber seasoning system is configured to season the processing region and the plasma field. The remote plasma cleaning system is in communication with the processing chamber. The remote plasma cleaning system is configured to clean the processing region and the plasma field.
    Type: Application
    Filed: February 14, 2017
    Publication date: August 16, 2018
    Inventors: Ying MA, Daemian RAJ, Martin Jay SEAMONS, Ankit POKHREL, Greg CHICHKANOFF, Yizhen ZHANG, Jingmei LIANG, Jay D. PINSON, II, Dongqing LI, Juan Carlos ROCHA-ALVAREZ
  • VOLTAGE-CURRENT PROBE FOR MEASURING RADIO-FREQUENCY ELECTRICAL POWER IN A HIGH-TEMPERATURE ENVIRONMENT AND METHOD OF CALIBRATING THE SAME
    Publication number: 20180231587
    Abstract: A voltage-current sensor enables more accurate measurement of the voltage, current, and phase of RF power that is delivered to high-temperature processing region. The sensor includes a planar body comprised of a non-organic, electrically insulative material, a measurement opening formed in the planar body, a voltage pickup disposed around the measurement opening, and a current pickup disposed around the measurement opening. Because of the planar configuration and material composition of the sensor, the sensor can be disposed proximate to or in contact with a high-temperature surface of a plasma processing chamber.
    Type: Application
    Filed: February 9, 2018
    Publication date: August 16, 2018
    Inventors: Zheng John YE, Jay D. PINSON, II, Juan Carlos ROCHA, Abdul Aziz KHAJA
  • PECVD apparatus and process
    Patent number: 10030306
    Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
    Type: Grant
    Filed: October 23, 2013
    Date of Patent: July 24, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Nagarajan Rajagopalan, Xinhai Han, Michael Tsiang, Masaki Ogata, Zhijun Jiang, Juan Carlos Rocha-Alvarez, Thomas Nowak, Jianhua Zhou, Ramprakash Sankarakrishnan, Ganesh Balasubramanian, Amit Kumar Bansal, Jeongmin Lee, Todd Egan, Edward Budiarto, Dmitriy Panasyuk, Terrance Y. Lee, Jian J. Chen, Mohamad A. Ayoub, Heung Lak Park, Patrick Reilly, Shahid Shaikh, Bok Hoen Kim, Sergey Starik
  • Apparatus and method for tuning electrode impedance for high frequency radio frequency and terminating low frequency radio frequency to ground
    Patent number: 10032608
    Abstract: Embodiments of the present invention relate to apparatus for improving uniformity and film stress of films deposited during plasma process of a substrate. According to embodiments, the apparatus includes a tuning electrode and/or a tuning ring electrically coupled to a variable capacitor for tuning high frequency RF impedance of the electrode and a low frequency RF termination to ground. The plasma profile and resulting film thickness can be controlled by adjusting the capacitance of the variable capacitor and the resulting impedance of the tuning electrode. The film stress of the film deposited on the substrate can be controlled, i.e., increased, by terminating the low frequency RF during processing.
    Type: Grant
    Filed: March 17, 2014
    Date of Patent: July 24, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Jian J. Chen, Juan Carlos Rocha-Alvarez, Mohamad A. Ayoub
  • Slit valve apparatus, systems, and methods
    Patent number: 10023954
    Abstract: Slit valve apparatuses are described. In one aspect, a slit valve apparatus is disclosed having a gate with at least one sealing surface, a blocker element, and a connector member that structurally connects the gate and the blocker element. Systems and methods including the slit valve apparatus are also disclosed, as are numerous other aspects.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: July 17, 2018
    Assignee: Applied Materials, Inc.
    Inventors: John J. Mazzocco, Dale Robert Du Bois, Juan Carlos Rocha-Alvarez
  • Diffusion bonded plasma resisted chemical vapor deposition (CVD) chamber heater
    Patent number: 9975320
    Abstract: Embodiments of the disclosure generally relate to heated substrate supports having a protective coating thereon. The protective coating is formed from pure yttria or alloys predominantly of yttria. The protective coating is diffusion bonded to the heater plate of the substrate support. Two distinct silicon containing layers are formed between the heater plate and the protective coating as the result of the diffusion bonding.
    Type: Grant
    Filed: January 13, 2014
    Date of Patent: May 22, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ren-Guan Duan, Juan Carlos Rocha-Alvarez, Jianhua Zhou
  • WAFER SWAPPER
    Publication number: 20180117771
    Abstract: The present disclosure generally relates to semiconductor process equipment used to transfer semiconductor substrates between process chambers. More specifically, embodiments described herein are related to systems and methods used to transfer, or swap, semiconductor substrates between process chambers using a transport device that employs at least two blades for the concurrent transfer of substrates between processing chambers.
    Type: Application
    Filed: January 2, 2018
    Publication date: May 3, 2018
    Inventors: Dale R. DU BOIS, Juan Carlos ROCHA-ALVAREZ, Karthik JANAKIRAMAN, Hari K. PONNEKANTI, Sanjeev BALUJA, Prajeeth WILTON
  • APPARATUS FOR RADICAL-BASED DEPOSITION OF DIELECTRIC FILMS
    Publication number: 20180080125
    Abstract: Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).
    Type: Application
    Filed: November 27, 2017
    Publication date: March 22, 2018
    Inventors: Jianhua ZHOU, Juan Carlos ROCHA-ALVAREZ, Yihong CHEN, Abhijit Basu MALLICK, Oscar LOPEZ, Ningli LIU
  • HEATER PEDESTAL ASSEMBLY FOR WIDE RANGE TEMPERATURE CONTROL
    Publication number: 20180082866
    Abstract: Implementations of the disclosure generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one implementation, a pedestal assembly is disclosed and includes a substrate support comprising a dielectric material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to a support member of the substrate support at a first end of the shaft, and a thermally conductive material disposed at an interface between the support member and the first end of the shaft.
    Type: Application
    Filed: September 13, 2017
    Publication date: March 22, 2018
    Inventors: Kaushik ALAYAVALLI, Ajit BALAKRISHNA, Sanjeev BALUJA, Amit Kumar BANSAL, Matthew James BUSCHE, Juan Carlos ROCHA-ALVAREZ, Swaminathan T. SRINIVASAN, Tejas ULAVI, Jianhua ZHOU
  • Wafer rotation in a semiconductor chamber
    Patent number: 9922819
    Abstract: A method and apparatus for processing a substrate are provided. The apparatus includes a pedestal and rotation member, both of which are moveably disposed within a processing chamber. The rotation member is adapted to rotate a substrate disposed in the chamber. The substrate may be supported by an edge ring during processing. The edge ring may selectively engage either the pedestal or the rotation member. In one embodiment, the edge ring engages the pedestal during a deposition process and the edge ring engages the rotation member during rotation of the substrate. The rotation of the substrate during processing may be discrete or continuous.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: March 20, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ganesh Balasubramanian, Juan Carlos Rocha-Alvarez, Ramprakash Sankarakrishnan, Robert Kim, Dale R. Du Bois, Kirby H. Floyd, Amit Kumar Bansal, Tuan Anh Nguyen
  • TUNABLE GROUND PLANES IN PLASMA CHAMBERS
    Publication number: 20180073142
    Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.
    Type: Application
    Filed: November 24, 2014
    Publication date: March 15, 2018
    Applicant: Applied Materials, Inc.
    Inventors: Karthik Janakiraman, Thomas NOWAK, Juan Carlos ROCHA-ALVAREZ, Mark A. FODOR, Dale R. DU BOIS, Amit BANSAL, Mohamad AYOUB, Eller Y. JUCO, Visweswaren SIVARAMAKRISHNAN, Hichem M'SAAD
  • SEMICONDUCTOR PROCESS EQUIPMENT
    Publication number: 20180076075
    Abstract: A substrate transport system is disclosed and includes a chamber having an interior wall, a planar motor disposed on the interior wall, and a substrate carrier magnetically coupled to the planar motor. The substrate carrier comprises a base and a substrate supporting surface coupled to a support member extending from the base in a cantilevered orientation.
    Type: Application
    Filed: September 7, 2017
    Publication date: March 15, 2018
    Inventors: Karthik JANAKIRAMAN, Hari K. PONNEKANTI, Juan Carlos ROCHA-ALVAREZ
  • PECVD PROCESS
    Publication number: 20180066364
    Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
    Type: Application
    Filed: November 3, 2017
    Publication date: March 8, 2018
    Inventors: Nagarajan RAJAGOPALAN, Xinhai HAN, Michael Wenyoung TSIANG, Masaki OGATA, Zhijun JIANG, Juan Carlos ROCHA-ALVAREZ, Thomas NOWAK, Jianhua ZHOU, Ramprakash SANKARAKRISHNAN, Amit Kumar BANSAL, Jeongmin LEE, Todd EGAN, Edward BUDIARTO, Dmitriy PANASYUK, Terrance Y. LEE, Jian J. CHEN, Mohamad A. AYOUB, Heung Lak PARK, Patrick REILLY, Shahid SHAIKH, Bok Hoen KIM, Sergey STARIK, Ganesh BALASUBRAMANIAN