Abstract: An apparatus is provided. There is a circuit assembly with a package substrate and an integrated circuit (IC). The package substrate has a microstrip line, and the IC is secured to the package substrate and is electrically coupled to the microstrip line. A circuit board is also secured to the package substrate. A dielectric waveguide is secured to the circuit board. The dielectric waveguide has a dielectric core that extends into a transition region located between the dielectric waveguide and the microstrip line, and the microstrip line is configured to form a communication link with the dielectric waveguide.

Abstract: An apparatus is provided. There is a circuit assembly with a package substrate and an integrated circuit (IC). The package substrate has a microstrip line, and the IC is secured to the package substrate and is electrically coupled to the microstrip line. A circuit board is also secured to the package substrate. A dielectric waveguide is secured to the circuit board. The dielectric waveguide has a dielectric core that extends into a transition region located between the dielectric waveguide and the microstrip line, and the microstrip line is configured to form a communication link with the dielectric waveguide.

Abstract: A power field-effect transistor package is fabricated. A leadframe including a flat plate and a coplanar flat strip spaced from the plate is provided. The plate has a first thickness and the strip has a second thickness smaller than the first thickness. A field-effect power transistor chip having a third thickness is provided. A first and second contact pad on one chip side and a third contact pad on the opposite chip side are created. The first pad is attached to the plate and the second pad to the strip. Terminals are concurrently attached to the plate and the strip so that the terminals are coplanar with the third contact pad. The thickness difference between plate and strip and spaces between chip and terminals is filled with an encapsulation compound having a surface coplanar with the plate and the opposite surface coplanar with the third pad and terminals. The chip, leadframe and terminals are integrated into a package having a thickness equal to the sum of the first and third thicknesses.

Abstract: A packaged power transistor device (100) having a leadframe including a flat plate (110) and a coplanar flat strip (120) spaced from the plate, the plate having a first thickness (110a) and the strip having a second thickness (120a) smaller than the first thickness, the plate and the strip having terminals (212; 121a). A field-effect power transistor chip (210) having a third thickness (210a), a first and a second contact pad on one chip side, and a third contact pad (211) on the opposite chip side, the first pad being attached to the plate, the second pad being attached to the strip, and the third pad being coplanar with the terminals.

Abstract: An integrated circuit (“IC”) assembly includes an IC die with a metallization layer on a top surface thereof. A plurality of lead wires are bonded at first end portions thereof to the metallization layer. A conductive layer is attached to the metallization layer and covers the first ends of the lead wires.

Abstract: An integrated circuit (“IC”) assembly includes an IC die with a metallization layer on a top surface thereof. A plurality of lead wires are bonded at first end portions thereof to the metallization layer. A conductive layer is attached to the metallization layer and covers the first ends of the lead wires.

Abstract: A method for fabricating a power supply converter comprises a load inductor wrapped by a metal sleeve structured to transform the inductor into a heat sink positioned to deposit layers of solder paste on a sleeve surface and on the inductor leads. A metal carrier having a portion of a first thickness and portions of a greater second thickness is placed on the solder layers of the inductor. The carrier portion of first thickness is aligned with the inductor sleeve. The carrier portions of second thickness are aligned with the inductor leads. A sync and a control FET are placed side-by-side on solder layers deposited on the carrier portion of first thickness opposite the inductor sleeve. Reflowing is preformed and the solder layers are solidified. The FETs, the carrier and the inductor become integrated and the un-soldered surfaces of the FETs and the carrier portions of second thickness become coplanar.

Abstract: A method for fabricating a power supply converter comprises a load inductor wrapped by a metal sleeve structured to transform the inductor into a heat sink positioned to deposit layers of solder paste on a sleeve surface and on the inductor leads. A metal carrier having a portion of a first thickness and portions of a greater second thickness is placed on the solder layers of the inductor. The carrier portion of first thickness is aligned with the inductor sleeve. The carrier portions of second thickness are aligned with the inductor leads. A sync and a control FET are placed side-by-side on solder layers deposited on the carrier portion of first thickness opposite the inductor sleeve. Reflowing is preformed and the solder layers are solidified. The FETs, the carrier and the inductor become integrated and the un-soldered surfaces of the FETs and the carrier portions of second thickness become coplanar.

Abstract: An apparatus includes a heat-generating component and a thermally inert component positioned in close proximity to the heat-generating component.

Abstract: An integrated circuit (“IC”) assembly includes an IC die with a metallization layer on a top surface thereof. A plurality of lead wires are bonded at first end portions thereof to the metallization layer. A conductive layer is attached to the metallization layer and covers the first ends of the lead wires.

Abstract: A power supply converter (100) comprising a first FET (210) connected to ground (230), the first FET coupled to a second FET (220) tied to an input terminal (240), both FETs conductively attached side-by-side to a first surface of a metal carrier (120) and operating as a converter generating heat; and a packaged load inductor (110) tied to the carrier and an output terminal (241), the inductor package wrapped by a metal sleeve (113) in touch with the opposite surface of the metal carrier, the sleeve operable to spread and radiate the heat generated by the converter.

Abstract: An apparatus is provided. An integrated circuit or IC is secured to a package housing. The IC has an IC substrate and an epitaxial layer formed over the substrate and having an active region and an upper surface. The upper surface is substantially exposed, and bond pads are formed over the epitaxial layer. Bond fixtures are each secured to and in electrical contact with at least one of the bond pads and with the package housing. A fill formed over at least a portion of the epitaxial layer so as to substantially encapsulate the active region, where the fill has a dielectric constant that is substantially equivalent to the dielectric constant of air. Additionally, the fill has a thickness, where the thickness is sufficiently large enough to confine parasitics of the active region at the upper surface of the epitaxial layer.

Abstract: An apparatus is provided. There is a circuit assembly with a package substrate and an integrated circuit (IC). The package substrate has a microstrip line, and the IC is secured to the package substrate and is electrically coupled to the microstrip line. A circuit board is also secured to the package substrate. A dielectric waveguide is secured to the circuit board. The dielectric waveguide has a dielectric core that extends into a transition region located between the dielectric waveguide and the microstrip line, and the microstrip line is configured to form a communication link with the dielectric waveguide.

Abstract: An apparatus is provided. There is a circuit assembly with a package substrate and an integrated circuit (IC). The package substrate has a microstrip line, and the IC is secured to the package substrate and is electrically coupled to the microstrip line. A circuit board is also secured to the package substrate. A dielectric waveguide is secured to the circuit board. The dielectric waveguide has a dielectric core that extends into a transition region located between the dielectric waveguide and the microstrip line, and the microstrip line is configured to form a communication link with the dielectric waveguide.

Abstract: An apparatus is provided. There is a circuit assembly with a package substrate and an integrated circuit (IC). The package substrate has a microstrip line, and the IC is secured to the package substrate and is electrically coupled to the microstrip line. A circuit board is also secured to the package substrate. A dielectric waveguide is secured to the circuit board. The dielectric waveguide has a dielectric core that extends into a transition region located between the dielectric waveguide and the microstrip line, and the microstrip line is configured to form a communication link with the dielectric waveguide.

Abstract: A packaged power supply module (100) comprising a chip (110) with a first power field effect transistor (FET) and a second chip (120) with a second FET conductively attached side-by-side onto a conductive carrier (130), the transistors having bond pads of a first area (210) and the carrier having bond pads of a second area (230) smaller than the first area. Conductive bumps (114, 115, 124, 125) attached to the transistor bond pads and conductive bumps (126) attached to the carrier bond pads have equal volume and are coplanar (150), the bumps on the transistor pads having a first height and the bumps on the carrier pads having a second height greater than the first height.

Abstract: A power supply module (400) comprising a metal leadframe with a pad (401) and a first metal clip (440) including a plate (440a), an extension (440b) and a ridge (440c); the plate and extension are spaced from the leadframe pad, and the ridge connected to an input supply. A synchronous Buck converter is in the space between the clip plate and the leadframe pad, the converter including a control FET die (410) soldered onto a sync FET die (420), the clip plate soldered to the control die having an input inductance (462), and the sync die soldered to the leadframe pad having an output capacitance. A capacitor (480a, 480b) integrated into the space between the clip extension and the leadframe pad, the clip extension soldered to the capacitor having a desired integrated inductance (463) operable to channel electrical energy from the switch node to ground.

Abstract: A packaged power supply module (100) comprising a chip (110) with a first power field effect transistor (FET) and a second chip (120) with a second FET conductively attached side-by-side onto a conductive carrier (130), the transistors having bond pads of a first area (210) and the carrier having bond pads of a second area (230) smaller than the first area. Conductive bumps (114, 115, 124, 125) attached to the transistor bond pads and conductive bumps (126) attached to the carrier bond pads have equal volume and are coplanar (150), the bumps on the transistor pads having a first height and the bumps on the carrier pads having a second height greater than the first height.

Abstract: A power supply converter (100) comprising a first FET (210) connected to ground (230), the first FET coupled to a second FET (220) tied to an input terminal (240), both FETs conductively attached side-by-side to a first surface of a metal carrier (120) and operating as a converter generating heat; and a packaged load inductor (110) tied to the carrier and an output terminal (241), the inductor package wrapped by a metal sleeve (113) in touch with the opposite surface of the metal carrier, the sleeve operable to spread and radiate the heat generated by the converter.

Abstract: A semiconductor die package includes: an assembly including a semiconductor die, a clip structure attached to an upper surface of the semiconductor die, and a heat sink attached to an upper surface of the clip structure; and a molding material partially encapsulating the assembly, wherein an upper surface of the heat sink is exposed through the molding material.