Abstract: Surface-treated copper foils that exhibit a material volume (Vm) in a range of 0.05 to 0.6 ?m3/?m2 and a yellowness index (YI) in a range of 17 to 52 are reported. Where the surface-treated copper foil is treated on the deposited side and includes a treatment layer comprising a nodule layer. Such surface-treated copper foils can be used as a conductive material having low transmission loss, for example in circuit boards.

Abstract: Surface-treated copper foils comprising an electrodeposited copper foil including a drum side and a deposited side are reported. The treatment layer is disposed on one of the drum side and the deposited side and provides a surface-treated side. The treatment layer comprises a nodule layer and the surface-treated side exhibits a void volume (Vv) in a range of 0.1 to 0.9 ?m3/?m2. The surface-treated copper foil also has a combined hydrogen and oxygen content of less than or equal to 300 ppm.

Abstract: Surface-treated copper foils exhibiting a void volume (Vv) in a range of 0.4 to 2.2 ?m3/?m2 and an arithmetic mean waviness (Wa) lower than or equal to 0.4 ?m are reported. Where the surface-treated copper foil is treated on the drum side and includes a treatment layer comprising a nodule layer. Such surface-treated copper foils can be used as a conductive material having low transmission loss, for example in circuit boards.

Abstract: A method of forming a semiconductor structure includes forming an etch stop layer on a substrate, forming a metal oxide layer over the etch stop layer, and forming an interlayer dielectric (ILD) layer on the metal oxide layer. The method further includes forming a trench etch opening over the ILD layer, forming a capping layer over the trench etch opening, and forming a via etch opening over the capping layer.

Abstract: An electro-phoretic display apparatus including an electro-phoretic display panel and a driving circuit is provided. The electro-phoretic display panel includes a display area and a border area. The driving circuit is coupled to the electro-phoretic display panel. The driving circuit is configured to drive the display area to display an image frame according to a first voltage. The driving circuit drives the border area to maintain displaying a white border or a black border according to a second voltage.

Abstract: An electronic device package structure and a manufacturing method thereof are provided. The electronic device package structure includes a first electronic device layer, a second electronic device layer, and a filling layer disposed between the first electronic device layer and the second electronic device layer, wherein the Young's modulus of the second electronic device layer is less than or equal to the Young's modulus of the first electronic device layer, and the Young's modulus of the filling layer is less than the Young's modulus of the second electronic device layer, and the ratio of the Young's modulus of the first electronic device layer to the Young's modulus of the filling layer is 10 to 1900 and the ratio of the Young's modulus of the second electronic device layer to the Young's modulus of the filling layer is 7.6 to 1300.

Abstract: The present disclosure relates to an improved, surface-treated copper foil that is resistant to rusting and discoloration. More specifically, the surface-treated copper foil is chromium-free and includes: (a) a copper foil; optionally, (b) a barrier layer on one or both sides of the copper foil, the barrier layer comprising Ni, Zn, Co, Mn, Sn or a mixture thereof; and (c) an organic layer coupled to the one or both sides of the copper foil or one or both barrier layer(s), wherein the sum total of the N, S, and Si elements of the organic layer is more than 5 normalized atomic %.

Abstract: Provided is an electrolytic copper foil. The electrolytic copper foil has a drum side and a deposited side, wherein ?Rz is less than 0.8 ?m; the electrolytic copper foil has a transverse direction, wherein the electrolytic copper foil is divided into 10 test pieces with the same width and the same length, and each two adjacent ones of the 10 test pieces have a weight deviation therebetween, and a count of the weight deviation(s) greater than or equal to 1.5% is smaller than a count of the weight deviations smaller than 1.

Abstract: A clock generation system having a time and frequency division activation mechanism is provided that includes a clock source processing circuit that generates a primary clock signal and clock-branching circuits that perform a clock-branching generation procedure respectively in an order. Each of the clock-branching modules includes a frequency division unit and a processing unit. The frequency division unit receives the primary clock signal to divide the frequency according to a divisor number and output a branch clock signal. The processing unit controls the frequency division unit to not output the branch clock signal before the clock-branching generation procedure and to decrease the divisor number gradually over time period after the clock-branching generation procedure begins such that a branch frequency of the branch clock signal generated by the frequency division unit increases from an initial frequency to a final frequency to finish the clock-branching generation procedure.

Abstract: A light source module used in a projection device comprises a plurality of laser emitting elements and a light adjusting device. The laser emitting elements are configured to emit excitation beams. Each excitation beam is received by an optical system of the projection device to emit sub-beams. The light adjusting device comprises a plurality of light adjusting elements. The excitation beams penetrate through the light adjusting device and are output as output beams to be converted into illumination beams by the optical system. The light adjusting elements are disposed corresponding to at least some of the laser emitting elements with reference to the sub-beam light intensity distributions, so that the illumination beam light intensity distributions conform to a preset light intensity distribution. Furthermore, a projection device is provided and comprises at least one light source module, an optical system, at least one light valve and a projection lens.

Abstract: An interconnect structure and a method of forming are provided. The method includes forming an opening in a dielectric layer and an etch stop layer, wherein the opening extends only partially through the etch stop layer. The method also includes creating a vacuum environment around the device. After creating the vacuum environment around the device, the method includes etching through the etch stop layer to extend the opening and expose a first conductive feature. The method also includes forming a second conductive feature in the opening.

Abstract: Implementations of the present disclosure provide methods for preventing contact damage or oxidation after via/trench opening formation. In one example, the method includes forming an opening in a structure on the substrate to expose a portion of a surface of an electrically conductive feature, and bombarding a surface of a mask layer of the structure using energy species formed from a plasma to release reactive species from the mask layer, wherein the released reactive species form a barrier layer on the exposed surface of the electrically conductive feature.

Abstract: A projector and a wavelength conversion device thereof are provided. The wavelength conversion device includes a wavelength conversion element and a diffusion element. The wavelength conversion element includes a first substrate and at least one wavelength conversion layer. The at least one wavelength conversion layer is disposed on the first substrate and surrounding an axle center of the first substrate. The at least one wavelength conversion layer is configured to perform a conversion on a light beam. The diffusion element is connected to the first substrate of the wavelength conversion element and surrounding the axle center of the first substrate. The diffusion element is configured to allow another light beam to pass through.

Abstract: A power control circuit includes a detection unit, a first switch, a first control circuit, a second switch, and an energy storage unit. The detection unit provides a detection state according to a state of a bottom cover of an electronic device. The first switch generates a first control signal according to a control voltage corresponding to the detection state. The first control circuit is coupled to the first switch and controls, according to the first control signal, a first voltage source to provide an operating voltage to the first control circuit. The second switch generates a second control signal according to the control voltage. The energy storage unit is coupled to the first control circuit. The first control circuit generates a third control signal according to the second control signal, to control the energy storage unit to stop outputting a direct current power.

Abstract: The present disclosure provides an electrodeposited copper foil having a puncture strength value and a tear strength value. A ratio of the puncture strength value to the tear strength value is from 14 to 64. The present disclosure also provides a lithium-ion secondary battery. The lithium-ion secondary battery is manufactured by using the electrodeposited copper foil and has excellent charge-discharge cycle life.

Abstract: An impact resistant structure for an electronic component. The impact resistant structure includes a resistance stack layer and a damping laminate. The resistance stack layer is disposed on a first surface of the electronic component, a thickness of the resistance stack layer is less than 10 ?m, and a Young's modulus of the resistance stack layer is between 40 GPa and 150 GPa. The damping laminate is disposed on a second surface of the electronic component. The second surface of the electronic component is opposite to the first surface. The damping laminate includes a soft film and a support film, where the support film is disposed between the soft film and the electronic component.

Abstract: Provided are an electrolytic copper foil, an electrode comprising the same, and a lithium ion battery comprising the same. The electrolytic copper foil has a drum side and a deposited side opposing to the drum side, wherein a nanoindentation hardness of the drum side is equal to or larger than 0.5 GPa and equal to or smaller than 3.5 GPa; and a lightness of the drum side is equal to or larger than 25 and equal to or smaller than 75.

Abstract: A chip package structure includes a chip package layer and at least one conductive structure layer. The chip package layer includes at least one chip and an encapsulant. The chip has an upper surface, and the encapsulant is used to encapsulate the chip and expose the upper surface. The conductive structure layer includes a plurality of first conductive pillars and a plurality of second conductive pillars. The first conductive pillars are disposed on the upper surface, the second conductive pillars are disposed on the upper surface and located between an edge of the upper surface and the first conductive pillars. A density of the second conductive pillars along an extending direction of the edge is greater than or equal to 1.2 times of a density of the first conductive pillars along the extending direction of the edge.

Abstract: Electrodeposited copper foils having properties suitable for use as current collectors in lithium-ion secondary batteries are disclosed. The electrodeposited copper foils include a drum side and a deposited side. At least one of the deposited side or the drum side has a root mean square slope (R?q) in the range of about 0.03 to about 0.23. In this manner, the copper foil has good durability and workability, as well as good performance as current collectors in lithium-ion secondary batteries.

Abstract: Electrodeposited copper foils having properties suitable for use as current collectors in lithium-ion secondary batteries are disclosed. The electrodeposited copper foils include a drum side and a deposited side. At least one of the deposited side or the drum side exhibits a void volume (Vv) value in the range of 0.17 to 1.17 ?m3/?m2.