Abstract: A dry etching process for manufacturing a trench structure of a semiconductor apparatus, including the steps of: step 1, providing a semiconductor substrate, wherein the semiconductor substrate is provided with a patterned photoresist layer and placed in a reaction chamber; step 2, introducing a first etching gas into the reaction chamber to perform a first etching process to form a trench, wherein the first etching gas includes sulfur hexafluoride, oxygen, helium, nitrogen trifluoride, and a first organic silicide; step 3, introducing a second etching gas into the reaction chamber to perform a second etching process to further etch the trench, wherein the second etching gas includes sulfur hexafluoride, oxygen, helium, and a second organic silicide; and step 4, introducing a third etching gas into the reaction chamber to perform a third etching process, wherein the third etching gas includes hydrobromic acid, oxygen, and helium.

Abstract: Surface-treated copper foils including a copper foil having a first side and an opposite-facing second side and two treatment layers disposed on the first side and the second side respectively are described. Each treatment layer provides a treated surface which exhibit a ten-point average roughness Rz in a range of 1.2 ?m to 4.6 ?m and a peak density (Spd) in a range of 490,000 to 1,080,000 mm?2. Additionally, the Cr content in each of the treatment layers is a range of 25 to 70 ?g/dm2. The surface-treated copper foils have excellent electrode active material coating properties, such as good adhesion and uniformity.

Abstract: A wire bonding device of a stator of a motor includes an insulating ring, a conductive wire, and a wire-bonding terminal. The insulating ring includes a bottom, an inner sidewall, and an outer sidewall. The inner sidewall is connected to an inner edge of the bottom. The outer sidewall is connected to an outer edge of the bottom. The conductive wire is accommodated in the insulating ring. The conductive wire is covered with an insulating cladding layer. The wire-bonding terminal includes a clamping portion, a protruding portion, and a wire-bonding segment. The clamping portion clamps the conductive wire. An end of the protruding portion is connected to the clamping portion. Another end of the protruding portion protrudes out of the insulating ring. An end of the wire-bonding segment is connected to said another end of the protruding portion.

Abstract: Provided are an electrolytic copper foil, and an electrode and a copper-clad laminate comprising the same. The electrolytic copper foil comprises a base copper layer having a drum side and a deposited side; wherein the electrolytic copper foil has a Charpy impact strength from 0.4 J/mm2 to 5.8 J/mm2.

Abstract: Provided is a protective structure including an auxiliary layer and a hard coating layer. The auxiliary layer has a first surface and a second surface opposite to the first surface. The hard coating layer is located on the second surface of the auxiliary layer. The Young's modulus of the auxiliary layer is gradually increased from the second surface to the first surface. An electronic device with the same is also provided.

Abstract: A synchronous rectifier controller controls a rectification power switch connected in series with a secondary winding between two power lines. The synchronous rectifier has a gate driver and a slew-rate detector. The gate driver drives the rectification power switch. The slew-rate detector detects a channel voltage of the rectification power switch, checks if a slew rate of the channel voltage exceeds a slope threshold. If the slew rate exceeds the slope threshold, the slew-rate detector turns the rectification power switch ON through the gate driver. If the slew rate is less than the slope threshold, the slew-rate detector reduces the slope threshold.

Abstract: A method of forwarding information base synchronization for a network switch stacking system includes transmitting by at least one slave network switch at least one change event to a master network switch, generating by the master network switch a change confirmation to the at least one slave network switch when a master forwarding information base is determined to be necessarily updated by the master network switch according to the at least one change event, and updating by the at least one slave network switch at least one slave forwarding information base according to the change confirmation, wherein the at least one change event includes at least one of a new learn event, a port move event, a regular port aging out event, a logic aggregation update aging time event.

Abstract: Electrodeposited copper foils possessing properties for manufacturing lithium ion rechargeable secondary batteries are described, including methods of making the electrodeposited copper foils, methods for making the battery, and the resultant battery. The electrodeposited copper foils have a specific burst strength in the range of 1.5 to 4.3 kPa*m2/g and a tensile strength in the range of 30 to 40 kgf/mm2. The deposited side of the electrodeposited copper foil has a surface hardness in the range of 0.2 to about 2.0 Gpa by nano indentation analysis to resist wrinkling during pressing of the active materials on the electrodeposited copper foil. The foil exhibits reduced copper burr formation and burr size after clipping.

Abstract: A barbecue grill includes a bowl, a platform, a bracket connected to the bowl, and a coupler connected to the platform and used to engage with the bracket in a detachable manner. A positioning rod is formed on the bracket, and a guiding slit is made in the coupler. The positioning rod is movable in the guiding slit. A restraining aperture is made in the bracket, and a latch is formed on the coupler and movable between an extended position and a withdrawn position. In the extended position, the latch can be inserted in the restraining aperture to engage the coupler with the bracket to keep the platform on the bowl.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM). The MRAM comprises a plurality of MRAM cells including a first type MRAM cell and a second type MRAM cell. Each of the plurality of MRAM cells includes a magnetic tunneling junction (MTJ) layer including a pinned magnetic layer, a tunneling barrier layer and a free magnetic layer. A size of the MTJ film stack of the first type MRAM cell is different from a size of the MTJ film stack of the second type MRAM cell. In one or more of the foregoing and following embodiments, a width of the MTJ film stack of the first type MRAM cell is different from a width of the MTJ film stack of the second type MRAM cell.

Abstract: A method for laser carving of paint on an outer surface of a vehicle wheel includes a step of priming: priming an outer surface of the wheel to form a painted surface; a step of laser carving: carving the primer from a selected area of the wheel by laser to remove the painted surface from the selected area, the selected area having an exposed area with metallic luster, and a step of fine-polish: polishing the outer surface of the wheel to form a fine-polished area at the exposed area. The painted surface on the wheel can be quickly removed to disclose a selected area with metallic luster, while the wheel is prevented from corrosion so as to reduce manufacturing cost and increase precision.

Abstract: A plasma processing apparatus is provided. The apparatus includes a lower sheltering module. The apparatus further includes an upper sheltering module arranged adjacent to the lower sheltering module. The apparatus includes an upper plate and an upper PEZ ring positioned around the upper plate. The apparatus also includes a shadowing unit that includes a number of engaging parts in the form of arcs detachably positioned on the upper PEZ ring. In addition, the apparatus includes a plasma generation module for generating plasma in the peripheral region of the lower sheltering module and the upper sheltering module.

Abstract: A barbecue grill includes a bowl and a support structure. The bowl includes two connectors and two couplers. Each of the connectors includes an aperture. Each of the couplers includes a latch movable between an extended position and a withdrawn position. The support structure includes two positioning elements and two restraining elements. Each of the positioning elements includes a hook for insertion in the aperture of a corresponding one of the connectors. Each of the restraining elements includes an engagement fin formed with an aperture for receiving the latch of a corresponding one of the couplers in the extended position when the engagement fin is located parallel to the corresponding coupler.

Abstract: For adjusting a signal transmission direction in a cable, which is configured to be electrically coupled between a first interface port and a second interface port, an electric characteristic on at least a first pin of the first interface port is detected. Then a signal transmission direction of at least one pair of differential signal transmission channels in the cable is controlled to change from a first direction to a second direction different from the first direction, provided that a communication protocol between the first interface port and the second interface port is changed from a first communication protocol to a second communication protocol, and the electric characteristic complies with a first condition.

Abstract: A semiconductor manufacturing method and semiconductor manufacturing tool for performing the same are disclosed. The semiconductor manufacturing tool includes a plasma chamber, a mounting platform disposed within the plasma chamber, a focus ring disposed within the plasma chamber, and at least one actuator mechanically coupled to the focus ring and configured to move the focus ring vertically. The actuator is configured to move the focus ring vertically when a plasma is present in the plasma chamber.

Abstract: A spreading control switch structure of a spreader has a spreading tube, a positioning member, a main tube and a switch unit. With the positioning member and the switch unit, the opening and closing state and the spreading amount of the present invention can be adjusted by the circular plate of the valve in the spreading tube. The size of the pipe in the spreading tube is opened to control the blanking amount. On the other hand, the circular plate of the valve can be kept opened in the spreading tube all time without the switching handle being pressed. Therefore, it is easier and less laborious to execute the spreading process.

Abstract: Provided are an electrolytic copper foil, an electrode comprising the same, and a lithium ion cell comprising the same. The electrolytic copper foil comprises first and second chromium layers each containing 15 ?g/dm2 to 50 ?g/dm2 of chromium, and has a resistivity of 1.72 ??*cm to 2.25 ??*cm. First and second surfaces thereof each have a contact angle of 15 to 50 degrees with oxalic acid, the first surface has a lightness of 17.5 to 40 and the second surface has a lightness of 38 to 60. With these characteristics, the electrolytic copper foil has good weatherability and good adhesion strength with the active materials, thereby improving the cycle life of the lithium ion cell comprising the same.

Abstract: A mobile device includes sensors and a processor. The sensors are disposed on opposite edges of the mobile device respectively. The processor is configured to collect a first data set labeled with a right hand holding gesture, collect a second data set labeled with a left hand holding gesture, establish a determination model associated with the first data set and the second data set, and in response to the processor collects a third data set comprising the holding positions and the force values detected by the sensor, determine a current holding gesture according to the third data set in reference to the determination model.

Abstract: A method of manufacturing an integrated fan-out (InFO) package includes at least the following steps. A package array is formed. A core layer and a dielectric layer are sequentially stacked over the package array. The core layer includes a plurality of cavities. A plurality of first conductive patches is formed on the dielectric layer above the cavities.

Abstract: A method of forming a semiconductor structure includes forming an etch stop layer on a substrate, forming a metal oxide layer over the etch stop layer, and forming an interlayer dielectric (ILD) layer on the metal oxide layer. The method further includes forming a trench etch opening over the ILD layer, forming a capping layer over the trench etch opening, and forming a via etch opening over the capping layer.