Patents by Inventor Jui-Ping Chuang
Jui-Ping Chuang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10073354Abstract: A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.Type: GrantFiled: May 7, 2015Date of Patent: September 11, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsueh-Yi Chung, Yung-Cheng Chen, Fei-Gwo Tsai, Chi-Hung Liao, Shih-Chi Fu, Wei-Ti Hsu, Jui-Ping Chuang, Tzong-Sheng Chang, Kuei-Shun Chen, Meng-Wei Chen
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Patent number: 10014394Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure, and the gate stack includes a work function layer and a metal filling over the work function layer. The semiconductor device structure further includes an isolation element over the semiconductor substrate and adjacent to the gate stack. The isolation element is in direct contact with the work function layer and the metal filling.Type: GrantFiled: January 24, 2017Date of Patent: July 3, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Che-Cheng Chang, Jui-Ping Chuang, Chen-Hsiang Lu, Yu-Cheng Liu, Wei-Ting Chen
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Publication number: 20180174925Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate and a gate stack covering a portion of the fin structure. The gate stack includes a work function layer and a gate dielectric layer. The semiconductor device structure also includes an isolation element over the semiconductor substrate and adjacent to the gate stack.Type: ApplicationFiled: February 19, 2018Publication date: June 21, 2018Inventors: Che-Cheng Chang, Jui-Ping Chuang, Chen-Hsiang Lu, Wei-Ting Chen, Yu-Cheng Liu
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Patent number: 9908201Abstract: Systems and methods are provided for edge bead removal. A laser beam of approximately a wavelength is received. The laser beam is delivered along a predetermined beam path. The laser beam is projected on an edge portion of a wafer for edge bead removal.Type: GrantFiled: April 22, 2014Date of Patent: March 6, 2018Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chun-Hao Chang, Hsueh-Yi Chung, Shang-Yun Huang, Jui-Ping Chuang, Li-Kong Turn, Fei-Gwo Tsai
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Patent number: 9899271Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate and a gate stack covering a portion of the fin structure. The gate stack includes a work function layer and a gate dielectric layer. The semiconductor device structure also includes an isolation element over the semiconductor substrate and adjacent to the gate stack.Type: GrantFiled: December 2, 2016Date of Patent: February 20, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Che-Cheng Chang, Jui-Ping Chuang, Chen-Hsiang Lu, Wei-Ting Chen, Yu-Cheng Liu
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Publication number: 20170343899Abstract: A developing method includes rotating a wafer. A developer solution is dispensed onto the rotated wafer through a first nozzle. The first nozzle is moved from a first position to a second position. The first position and the second position are over the wafer and within a perimeter of the wafer when viewed from a top of the wafer. The developer solution is dispensed through the first nozzle when moving the first nozzle from the first position to the second position. The first nozzle is moved back from the second position to the first position immediately after the first nozzle is moved from the first position to the second position. The developer solution is dispensed through the first nozzle when moving the first nozzle from the second position to the first position.Type: ApplicationFiled: August 14, 2017Publication date: November 30, 2017Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yi-Rem CHEN, Ming-Shane LU, Chung-Hao CHANG, Jui-Ping CHUANG, Li-Kong TURN, Fei-Gwo TSAI
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Patent number: 9733568Abstract: A tool and a method of developing are provided. In various embodiments, the method of developing includes rotating a wafer at a first rotating speed. The method further includes dispensing a developer solution onto the wafer at the first rotating speed by a first nozzle above the wafer, wherein the first nozzle moves back and forth along a path during dispensing the developer solution. The method further includes rotating the wafer at a second rotating speed to spread the developer solution onto the wafer uniformly. The method further includes dispensing a rinse solution onto the wafer at the second rotating speed by a second nozzle above the wafer.Type: GrantFiled: February 25, 2014Date of Patent: August 15, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yi-Rem Chen, Ming-Shane Lu, Chung-Hao Chang, Jui-Ping Chuang, Li-Kong Turn, Fei-Gwo Tsai
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Patent number: 9728533Abstract: Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used. Other embodiments related to a semiconductor device resulting from the method.Type: GrantFiled: December 22, 2014Date of Patent: August 8, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Li Chou, Shao-Yen Ku, Pei-Hung Chen, Jui-Ping Chuang
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Patent number: 9704714Abstract: A method for processing a semiconductor wafer is provided. The method includes performing a discharging process over the semiconductor wafer in a discharging chamber which is enclosed. The method further includes processing the semiconductor wafer by use of a first processing module after the discharging process. During the discharging process, charged particles applied on the semiconductor wafer are tuned based on the characteristics of the surface of the semiconductor wafer.Type: GrantFiled: April 16, 2015Date of Patent: July 11, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Weibo Yu, Jui-Ping Chuang, Chen-Hsiang Lu, Shao-Yen Ku
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Publication number: 20170133490Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure, and the gate stack includes a work function layer and a metal filling over the work function layer. The semiconductor device structure further includes an isolation element over the semiconductor substrate and adjacent to the gate stack. The isolation element is in direct contact with the work function layer and the metal filling.Type: ApplicationFiled: January 24, 2017Publication date: May 11, 2017Inventors: Che-Cheng Chang, Jui-Ping Chuang, Chen-Hsiang Lu, Yu-Cheng Liu, Wei-Ting Chen
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Publication number: 20170084499Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate and a gate stack covering a portion of the fin structure. The gate stack includes a work function layer and a gate dielectric layer. The semiconductor device structure also includes an isolation element over the semiconductor substrate and adjacent to the gate stack.Type: ApplicationFiled: December 2, 2016Publication date: March 23, 2017Inventors: Che-Cheng Chang, Jui-Ping Chuang, Chen-Hsiang Lu, Wei-Ting Chen, Yu-Cheng Liu
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Patent number: 9559205Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate and a gate stack covering a portion of the fin structure. The gate stack includes a work function layer and a gate dielectric layer. The semiconductor device structure also includes an isolation element over the semiconductor substrate and adjacent to the gate stack. The isolation element is in direct contact with the work function layer and the gate dielectric layer, and a lower width of the isolation element is greater than an upper width of the isolation element.Type: GrantFiled: May 29, 2015Date of Patent: January 31, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Che-Cheng Chang, Jui-Ping Chuang, Chen-Hsiang Lu, Wei-Ting Chen, Yu-Cheng Liu
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Patent number: 9553090Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure, and the gate stack includes a work function layer and a metal filling over the work function layer. The semiconductor device structure further includes an isolation element over the semiconductor substrate and adjacent to the gate stack. The isolation element is in direct contact with the work function layer and the metal filling.Type: GrantFiled: May 29, 2015Date of Patent: January 24, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Che-Cheng Chang, Jui-Ping Chuang, Chen-Hsiang Lu, Wei-Ting Chen, Yu-Cheng Liu
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Publication number: 20160351568Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure, and the gate stack includes a work function layer and a metal filling over the work function layer. The semiconductor device structure further includes an isolation element over the semiconductor substrate and adjacent to the gate stack. The isolation element is in direct contact with the work function layer and the metal filling.Type: ApplicationFiled: May 29, 2015Publication date: December 1, 2016Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Che-Cheng CHANG, Jui-Ping CHUANG, Chen-Hsiang LU, Wei-Ting CHEN, Yu-Cheng LIU
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Publication number: 20160351700Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate and a gate stack covering a portion of the fin structure. The gate stack includes a work function layer and a gate dielectric layer. The semiconductor device structure also includes an isolation element over the semiconductor substrate and adjacent to the gate stack. The isolation element is in direct contact with the work function layer and the gate dielectric layer, and a lower width of the isolation element is greater than an upper width of the isolation element.Type: ApplicationFiled: May 29, 2015Publication date: December 1, 2016Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Che-Cheng CHANG, Jui-Ping CHUANG, Chen-Hsiang LU, Wei-Ting CHEN, Yu-Cheng LIU
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Publication number: 20160307757Abstract: A method for processing a semiconductor wafer is provided. The method includes performing a discharging process over the semiconductor wafer in a discharging chamber which is enclosed. The method further includes processing the semiconductor wafer by use of a first processing module after the discharging process. During the discharging process, charged particles applied on the semiconductor wafer are tuned based on the characteristics of the surface of the semiconductor wafer.Type: ApplicationFiled: April 16, 2015Publication date: October 20, 2016Inventors: Weibo YU, Jui-Ping CHUANG, Chen-Hsiang LU, Shao-Yen Ku
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Publication number: 20160307816Abstract: A method for forming a semiconductor device structure is provided. The method includes performing a first process over a surface of a semiconductor substrate. The method includes forming a protective layer over the surface of the semiconductor substrate in a first chamber after the first process. The method includes performing a first transferring process to transfer the semiconductor substrate from the first chamber into a substrate carrier. The method includes performing a second transferring process to transfer the semiconductor substrate from the substrate carrier into a second chamber. The semiconductor substrate is located in the substrate carrier during a substantially entire first time interval between the first transferring process and the second transferring process. The method includes removing the substantially entire protective layer in the second chamber. The method includes performing a second process over the surface of the semiconductor substrate.Type: ApplicationFiled: April 17, 2015Publication date: October 20, 2016Inventors: Weibo YU, Jui-Ping CHUANG, Chen-Hsiang LU, Shao-Yen KU
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Publication number: 20160124323Abstract: A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.Type: ApplicationFiled: May 7, 2015Publication date: May 5, 2016Inventors: Hsueh-Yi CHUNG, Yung-Cheng CHEN, Fei-Gwo TSAI, Chi-Hung LIAO, Shih-Chi FU, Wei-Ti HSU, Jui-Ping CHUANG, Tzong-Sheng CHANG, Kuei-Shun CHEN, Meng-Wei CHEN
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Publication number: 20150298262Abstract: Systems and methods are provided for edge bead removal. A laser beam of approximately a wavelength is received. The laser beam is delivered along a predetermined beam path. The laser beam is projected on an edge portion of a wafer for edge bead removal.Type: ApplicationFiled: April 22, 2014Publication date: October 22, 2015Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: CHUN-HAO CHANG, HSUEH-YI CHUNG, SHANG-YUN HUANG, JUI-PING CHUANG, LI-KONG TURN, FEI-GWO TSAI
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Publication number: 20150241786Abstract: A tool and a method of developing are provided. In various embodiments, the method of developing includes rotating a wafer at a first rotating speed. The method further includes dispensing a developer solution onto the wafer at the first rotating speed by a first nozzle above the wafer, wherein the first nozzle moves back and forth along a path during dispensing the developer solution. The method further includes rotating the wafer at a second rotating speed to spread the developer solution onto the wafer uniformly. The method further includes dispensing a rinse solution onto the wafer at the second rotating speed by a second nozzle above the wafer.Type: ApplicationFiled: February 25, 2014Publication date: August 27, 2015Applicant: Taiwan Semiconductor Manufacturing CO., LTD.Inventors: Yi-Rem Chen, Ming-Shane Lu, Chung-Hao Chang, Jui-Ping Chuang, Li-Kong Turn, Fei-Gwo Tsai