Abstract: Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used. Other embodiments related to a semiconductor device resulting from the method.

Abstract: Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used.

Abstract: Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used.

Abstract: An apparatus comprises a process chamber, and a loadlock connected to the process chamber. The loadlock is configured to have a wafer holder disposed therein. The wafer holder is configured to store a plurality of wafers, and is configured to transport the plurality of wafers away from the loadlock.

Abstract: A method for depositing an inter-metal-dielectric layer on a semiconductor substrate by plasma chemical vapor deposition without the layer cracking defect is disclosed. The semiconductor substrate is first heat-treated in the same plasma process chamber to a temperature of at least 300° C. for a length of time sufficient to outgas a surface of the semiconductor substrate. The impurity gases absorbed on the surface of the semiconductor substrate can be effectively outgassed during the heat treatment process such that they are not trapped under an IMD layer deposited in a subsequent plasma deposition process. The method effectively minimizes or eliminates completely the IMD layer cracking defect of the dielectric layer.

Abstract: A method for determining end-point in a chamber cleaning process is disclosed which can be carried out by first providing a chamber that has a cavity for conducting a semiconductor fabrication process therein, then mounting a crystal sensor on a surface of the chamber cavity at a position that the sensor is exposed to gases or liquids or generated by the fabrication process; conducting a semiconductor fabrication process in the chamber; flowing a cleaning fluid into and in-situ cleaning the surface of the chamber cavity; inputting an oscillating frequency into the crystal sensor and monitoring an output frequency of oscillation from the sensor; and comparing the output frequency of oscillation to an output frequency from a crystal sensor that has a clean surface and determining when the surface of the chamber cavity is cleaned.

Abstract: A method for depositing an inter-metal-dielectric layer on a semiconductor substrate by plasma chemical vapor deposition without the layer cracking defect is disclosed. The semiconductor substrate is first heat-treated in the same plasma process chamber to a temperature of at least 300° C. for a length of time sufficient to outgas a surface of the semiconductor substrate. The impurity gases absorbed on the surface of the semiconductor substrate can be effectively outgassed during the heat treatment process such that they are not trapped under an IMD layer deposited in a subsequent plasma deposition process. The method effectively minimizes or eliminates completely the IMD layer cracking defect of the dielectric layer.

Abstract: Within a method for fabricating a microelectronic fabrication there is first provided a substrate having formed thereover a minimum of one microelectronic layer, where the minimum of one microelectronic layer is at least partially transparent to an incident radiation beam. There is then chemical mechanical polish (CMP) planarized the minimum of one microelectronic layer, while employing a chemical mechanical polish (CMP) planarizing method, to form from the minimum of one microelectronic layer a minimum of one chemical mechanical polish (CMP) planarized microelectronic layer.

Abstract: A method for determining end-point in a chamber cleaning process is disclosed which can be carried out by first providing a chamber that has a cavity for conducting a semiconductor fabrication process therein, then mounting a crystal sensor on a surface of the chamber cavity at a position that the sensor is exposed to gases or liquids or generated by the fabrication process; conducting a semiconductor fabrication process in the chamber; flowing a cleaning fluid into and in-situ cleaning the surface of the chamber cavity; inputting an oscillating frequency into the crystal sensor and monitoring an output frequency of oscillation from the sensor; and comparing the output frequency of oscillation to an output frequency from a crystal sensor that has a clean surface and determining when the surface of the chamber cavity is cleaned.

Abstract: A method and an apparatus for determining end point in a chemical mechanical polishing process by utilizing two separate laser beams are provided. When two separate laser beams of different wavelengths are utilized, the difference in the wavelengths is at least about 50 nm. For instance, one wavelength may be about 633 nm, while the other wavelength may be about 700˜950 nm. When two laser beams of different incident angles are utilized, the difference in the angles may be at least 2°, and preferably at least 5°.