Patents by Inventor Julien Buckley

Julien Buckley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120205605
    Abstract: An organic redox active compound with reversible storage of charge is disclosed. The material characterized by a formula R-M-Y-T. According to some aspects, R represents a deconjugating group, M represents an organic redox active fragment, not comprising any metal ion or metal, capable of reversibly storing at least one charge, T represents a tripod group comprising three groups F, capable of being chemically grafted to a surface of a solid substrate, and Y represents a spacer group separating M from T. A substrate on which the compounds are grafted, a molecular memory device including the compound or the substrate, and an electronic apparatus including the molecular memory device are also disclosed.
    Type: Application
    Filed: December 9, 2009
    Publication date: August 16, 2012
    Applicant: Commissariat a' l' energie atomique et aux energie alternatives
    Inventors: Julien Buckley, Renaud Demadrille, Kai Huang, Yann Kervella
  • Publication number: 20120052598
    Abstract: A method for making a crossbar array of crossed conductive or semi-conductive access lines on a substrate, the crossbar array including on a crossbar array insulator, in a plane parallel to the substrate, a first level of lines including a plurality of first lines parallel with each other made of a conductive or semi-conductive material; on the first level of lines, a second level of lines including a plurality of second lines parallel with each other made of a conductive or semi-conductive material, the second lines being substantially perpendicular to the first lines. The method includes forming, on the substrate, a first cavity of substantially rectangular shape; forming a second cavity of substantially rectangular shape superimposed to the first cavity, the first and second cavities intersecting each other perpendicularly so as to form a resultant cavity.
    Type: Application
    Filed: June 7, 2011
    Publication date: March 1, 2012
    Applicants: Commissariat à l'énergie atomique et aux énergies alternatives, Université Joseph Fourier, Centre national de la recherche scientifique
    Inventors: Julien Buckley, Karim Aissou, Thierry Baron, Gabriel Molas
  • Patent number: 7927888
    Abstract: Improved method to fabricate a microelectronic device provided with at least one circuit to detect biological elements, comprising the steps of: a) forming transistors, depositing at least one layer in at least one insulating material (141) coating said transistors, forming one or more holes (143) in said layer of insulating material (141), so as to expose the upper face of the respective gate (135) of first-type transistors, filling the holes with a gate material, b) removing, at least in part, the respective gate (135) of the first-type transistors, whilst the gate of second-type transistors is protected, the method prior to or at the same time as said removal conducted at step b) further comprising the removal of said gate material.
    Type: Grant
    Filed: November 18, 2009
    Date of Patent: April 19, 2011
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Julien Buckley, Olivier Billoint, Guillaume Delapierre
  • Publication number: 20100124791
    Abstract: Improved method to fabricate a microelectronic device provided with at least one circuit to detect biological elements, comprising the steps of: a) forming transistors, depositing at least one layer in at least one insulating material (141) coating said transistors, forming one or more holes (143) in said layer of insulating material (141), so as to expose the upper face of the respective gate (135) of first-type transistors, filling the holes with a gate material, b) removing, at least in part, the respective gate (135) of the first-type transistors, whilst the gate of second-type transistors is protected, the method prior to or at the same time as said removal conducted at step b) further comprising the removal of said gate material.
    Type: Application
    Filed: November 18, 2009
    Publication date: May 20, 2010
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Julien BUCKLEY, Olivier Billoint, Guillaume Delapierre