Abstract: A first UE can receive a request to communicate from a second UE. The first UE and the second UE can exchange a first cryptographic key and a second cryptographic key associated with the first and the second UE, respectively. The first UE can receive an encrypted unique identifier associated with the second UE, where the unique identifier identifies a second wireless telecommunication network serving the second UE. The first UE can authenticate the second UE by sending the encrypted unique identifier to a first wireless telecommunication network and sending a request to confirm that the unique identifier is valid. The first UE can receive, from the first wireless telecommunication network, a confirmation that the unique identifier is valid. Upon receiving the confirmation, the first UE can engage in a communication with the second UE.

Abstract: Solutions for accelerating cell search and selection by a user equipment (UE) include: detecting, by the UE, a network exit; determining, by the UE, a network reentry condition; based on at least mobility data for the UE and a network connectivity context history, determining, by the UE, using a machine learning (ML) component, a set of priority reentry cells; attempting network reentry with the set of priority reentry cells; and based on at least failing network reentry with the set of priority reentry cells, attempting network reentry with a cell search. In some examples, mobility data for the UE is also used for determining the set of priority reentry cells. By searching the set of priority reentry cells first , rather than starting with a blind search, the UE may save not only battery power, but also reconnect to the network more quickly, thereby improving the user experience.

Abstract: Solutions for focused cellular network paging of a user equipment (UE) include: detecting, by a network, a network exit of the UE from a last known cell and an exit condition for the UE; determining, by the network, a network paging condition; based on at least the last known cell and the exit condition for the UE, determining, by the network, a set of priority paging cells; paging the UE with the set of priority paging cells; and based on at least failing to receive a response by paging the UE with the set of priority paging cells, paging the UE with a larger set of cells. In some examples, the network topology is also used for determining the set of priority paging cells. By starting with the set of priority paging cells, rather than wider global paging, fewer cells are used for paging, thereby saving network bandwidth.

Abstract: The invention provides an apparatus for use in determining the three-dimensional shape of an object, which apparatus comprises: an article, comprising a stretchable material, and a plurality of strain sensors positioned in contact with the material such that stretching of the material is detectable by the sensors; a computing device operatively coupled to the article and configured to receive output data from the sensors and to process the data to determine the three dimensional shape of the object. The invention also provides a method for providing a customized orthotic product using the apparatus.

Abstract: Based on measurement reports reported to a base station by a plurality of UEs, the base station or a data system may dynamically configure a location of a physical random access control channel (PRACH) defined by the base station such that the PRACH is located in an optimal location. In one example, a data system may receive a plurality of subband CQI reports that includes one or more subband CQI values reported to the base station by each of a plurality of UEs served by the base station. The data system may determine, based on the plurality of subband CQI reports, that a particular range of resource blocks has a highest reported downlink air interface quality. And the data system may cause the base station define a PRACH instance in the particular range of resource blocks for carrying random access requests from the plurality of UEs to the base station.

Abstract: A method for processing product wafers using carrier substrates is disclosed. The method includes a step of bonding a first carrier wafer to a first product wafer using a first temporary adhesion layer between a first carrier wafer surface and a first product wafer first surface. Another step includes bonding a second carrier wafer to a second product wafer using a second temporary adhesion layer between a second carrier wafer surface and a second product wafer surface. Another step includes bonding the first product wafer to the second product wafer using a permanent bond between a first product wafer second surface and a second product wafer first surface. In exemplary embodiments, at least one processing step is performed on the first product wafer after the first temporary carrier wafer is bonded to the first product wafer before the second product wafer is permanently bonded to the first product wafer.

Abstract: A mechanism for S1 handover triggered by a target eNodeB. When a UE is being served by a source eNodeB and detects threshold strong coverage of a target cell, the UE sends an RRC connection request to the target eNodeB and informs the target eNodeB that the UE is being served by the source eNodeB. In response, the target eNodeB engages in a process to invoke handover of the UE to the target eNodeB, without the target eNodeB having received from the MME or from the source eNodeB a handover request for the handover of the UE.

Abstract: Disclosed are methods and systems for a UE to expedite handover through advanced obtaining and reporting of a network identifier. The UE could detect for possible handover a target cell that a target base station provides. In response to the detecting, the UE could determine that the target base station is of a particular class of base stations and, responsive to determining that the target base station is of the particular class, could determine and report the network identifier to a source base station serving the UE. In this way, if the source base station does not have a record of the network identifier, the source base station would not need to request the UE to determine and report that identifier, and could instead use the reported network identifier as basis to engage in handover signaling to process handover of the UE to the target cell, thereby expediting handover.

Abstract: Power amplification devices are disclosed having a vertical ballast configuration to prevent thermal runaway in at least one stack of bipolar transistors formed on a semiconductor substrate. To provide a negative feedback to prevent thermal runaway in the bipolar transistors, a conductive layer is formed over and coupled to the stack. A resistivity of the conductive layer provides an effective resistance that prevents thermal runaway in the bipolar transistors. The vertical placement of the conductive layer allows for vertical heat dissipation and thus provides ballasting without concentrating heat.

Abstract: Encapsulated MEMS switches are disclosed along with methods of manufacturing the same. A non-polymer based sacrificial layer is used to form the actuation member of the MEMS switch while a polymer based sacrificial layer is used to form the enclosure that encapsulates the MEMS switch. The first non-polymer based sacrificial layer allows for highly reliable MEMS switches to be manufactured while also protecting the MEMS switch from carbon contamination. The polymer based sacrificial layer allows for the manufacture of more spatially efficient encapsulated MEMS switches.

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.

Abstract: A method for processing product wafers using carrier substrates is disclosed. The method includes a step of bonding a first carrier wafer to a first product wafer using a first temporary adhesion layer between a first carrier wafer surface and a first product wafer first surface. Another step includes bonding a second carrier wafer to a second product wafer using a second temporary adhesion layer between a second carrier wafer surface and a second product wafer surface. Another step includes bonding the first product wafer to the second product wafer using a permanent bond between a first product wafer second surface and a second product wafer first surface. In exemplary embodiments, at least one processing step is performed on the first product wafer after the first temporary carrier wafer is bonded to the first product wafer before the second product wafer is permanently bonded to the first product wafer.

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.

Abstract: Pilot switch circuitry grounds a hot node (an injection node) of a microelectromechanical system (MEMS) switch to reduce or eliminate arcing between a cantilever contact and a terminal contact when the MEMS switch is opened or closed. The pilot switch circuitry grounds the hot node prior to, during, and after the cantilever contact and terminal contact of the MEMS come into contact with one another (when the MEMS switch is closed). Additionally, the pilot switch circuitry grounds the hot node prior to, during, and after the cantilever contact and terminal contact of the MEMS disengage from one another (when the MEMS switch is opened).

Abstract: Combination circuitry includes a relatively small preamplifier and includes hybrid circuitry. The hybrid circuitry is configured to perform mode switching while also performing some amplification, thus allowing the relatively small preamplifier to be smaller than a conventional power amplifier. In one embodiment, the hybrid circuitry includes first series portion configured to amplify when ON, a first shunt portion, a second series portion configured to amplify when ON, and a second shunt portion. The first series portion may include: a first transistor; a first variable impedance in communication with a gate of the first transistor, wherein the first variable impedance is configured to receive a first transistor control signal; a second transistor in series with the first transistor; and a second variable impedance in communication with a gate of the second transistor, wherein second variable impedance is configured to receive a second transistor control signal.

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure having a first surface and a second surface. A polymer substrate having a high thermal conductivity and a high electrical resistivity is disposed onto the first surface of the semiconductor stack structure. One method includes providing the semiconductor stack structure with the first surface in direct contact with a wafer handle. A next step involves removing the wafer handle to expose the first surface of the semiconductor stack structure. A following step includes disposing a polymer substrate having high thermal conductivity and high electrical resistivity directly onto the first surface of the semiconductor stack structure.

Abstract: Embodiments disclosed herein relate to programmable duplexers. The frequency pass band of the programmable duplexer is changed according to a selection of a channel-pair selection to control or maximize the transition band between the receiver path and the transmitter path. The programmable duplexer permits selections of desired pass bands without the need for multiple duplexer filters. As an additional advantage, the transmission band requirements become less sensitive to manufacturing tolerances and temperature variations.

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure having a first surface and a second surface. A first polymer having a high thermal conductivity and a high electrical resistivity is disposed on the first surface of the semiconductor stack structure. An exemplary method includes providing the semiconductor stack structure with the second surface in direct contact with a wafer handle. A next step involves removing the wafer handle to expose the second surface of the semiconductor stack structure. A following step includes disposing a second polymer having high thermal conductivity and high electrical resistivity directly onto the second surface of the semiconductor stack structure. Additional methods apply silicon nitride layers on the first surface and second surface of the semiconductor stack structure before disposing the first polymer and second polymer to realize the semiconductor device.

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a semiconductor stack structure attached to a wafer handle having at least one aperture that extends through the wafer handle to an exposed portion of the semiconductor stack structure. A thermally conductive and electrically resistive polymer substantially fills the at least one aperture and contacts the exposed portion of the semiconductor stack structure. One method for manufacturing the semiconductor device includes forming patterned apertures in the wafer handle to expose a portion of the semiconductor stack structure. The patterned apertures may or may not be aligned with sections of RF circuitry making up the semiconductor stack structure. A following step includes contacting the exposed portion of the semiconductor stack structure with a polymer and substantially filling the patterned apertures with the polymer, wherein the polymer is thermally conductive and electrically resistive.

Abstract: The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction paths between the FET elements through the thin-film semiconductor device layer and through a substrate of the thin-film semiconductor die may be substantially eliminated by using insulating materials. Elimination of the conduction paths allows an RF signal across the RF switch to be divided across the series coupled FET elements, such that each FET element is subjected to only a portion of the RF signal. Further, each FET element is body-contacted and may receive reverse body biasing when the RF switch is in an OFF state, thereby reducing an OFF state drain-to-source capacitance of each FET element.