Abstract: The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction paths between the FET elements through the thin-film semiconductor device layer and through a substrate of the thin-film semiconductor die may be substantially eliminated by using insulating materials. Elimination of the conduction paths allows an RF signal across the RF switch to be divided across the series coupled FET elements, such that each FET element is subjected to only a portion of the RF signal. Further, each FET element is body-contacted and may receive reverse body biasing when the RF switch is in an OFF state, thereby reducing an OFF state drain-to-source capacitance of each FET element.

Abstract: The present disclosure relates to a passive multi-band duplexer having a first bandpass filter and a second bandpass filter. The first bandpass filter includes a first group of sub-band bandpass filters, a first switching circuit, and a first tunable LC bandpass filter. Similarly, the second bandpass filter includes a second group of sub-band bandpass filters, a second switching circuit, and a second tunable LC bandpass filter. A first band of the passive multi-band duplexer, such as a transmit band, is chosen by selecting one of the first group of sub-band bandpass filters and tuning the first tunable LC bandpass filter to the first band. Similarly, a second band of the passive multi-band duplexer, such as a receive band, is chosen by selecting one of the second group of sub-band bandpass filters and tuning the second tunable LC bandpass filter to the second band.

Abstract: Combination circuitry includes a relatively small preamplifier and includes hybrid circuitry. The hybrid circuitry is configured to perform mode switching while also performing some amplification, thus allowing the relatively small preamplifier to be smaller than a conventional power amplifier. In one embodiment, the hybrid circuitry includes first series portion configured to amplify when ON, a first shunt portion, a second series portion configured to amplify when ON, and a second shunt portion. The first series portion may include: a first transistor; a first variable impedance in communication with a gate of the first transistor, wherein the first variable impedance is configured to receive a first transistor control signal; a second transistor in series with the first transistor; and a second variable impedance in communication with a gate of the second transistor, wherein second variable impedance is configured to receive a second transistor control signal.

Abstract: The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanical systems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die.

Abstract: Power amplification devices are disclosed having a vertical ballast configuration to prevent thermal runaway in at least one stack of bipolar transistors formed on a semiconductor substrate. To provide a negative feedback to prevent thermal runaway in the bipolar transistors, a conductive layer is formed over and coupled to the stack. A resistivity of the conductive layer provides an effective resistance that prevents thermal runaway in the bipolar transistors. The vertical placement of the conductive layer allows for vertical heat dissipation and thus provides ballasting without concentrating heat.

Abstract: Disclosed is a method for fabricating a customized micro-electromechanical systems (MEMS) integrated circuit using at least one redistribution layer. The method includes steps of providing a substrate on which MEMS components are fabricated and coupling predetermined ones of the MEMS components via the redistribution traces.

Abstract: Encapsulated MEMS switches are disclosed along with methods of manufacturing the same. A non-polymer based sacrificial layer is used to form the actuation member of the MEMS switch while a polymer based sacrificial layer is used to form the enclosure that encapsulates the MEMS switch. The first non-polymer based sacrificial layer allows for highly reliable MEMS switches to be manufactured while also protecting the MEMS switch from carbon contamination. The polymer based sacrificial layer allows for the manufacture of more spatially efficient encapsulated MEMS switches.

Abstract: The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, or the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The reverse breakdown voltage capability of the LHVD may be increased by using an intrinsic material between the anode and the cathode. Similarly, in a lateral high-voltage thyristor, such as a lateral high-voltage Silicon-controlled rectifier (LHV-SCR), the withstand voltage capability of the LHV-SCR may be increased by using an intrinsic material between the anode and the cathode.

Abstract: Embodiments disclosed herein relate to programmable duplexers. The frequency pass band of the programmable duplexer is changed according to a selection of a channel-pair selection to control or maximize the transition band between the receiver path and the transmitter path. The programmable duplexer permits selections of desired pass bands without the need for multiple duplexer filters. As an additional advantage, the transmission band requirements become less sensitive to manufacturing tolerances and temperature variations.

Abstract: The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanical systems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die.

Abstract: The present invention relates to providing a uniform operating environment for each of multiple devices by providing a common environment to the devices. The common environment is provided by multiple cavities, which are interconnected by at least one environmental pathway, which may be provided by at least one tunnel. The common environment may help provide uniform operating pressure, which may be a partial or near vacuum, a surrounding gas of uniform contents, such as an inert gas or mixture of inert gases, or both. The devices may include micro-electro-mechanical system (MEMS) devices, such as MEMS switches.

Abstract: The present invention relates to integration of a lateral high-voltage metal oxide semiconductor field effect transistor (LHV-MOSFET) with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, and the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The source to drain voltage capability of the LHV-MOSFET may be increased by using an intrinsic material between the source and the drain. The gate voltage capability of the LHV-MOSFET may be increased by using an insulator material, such as a thick oxide, between the gate and the channel of the LHV-MOSFET.

Abstract: The present invention provides a method for manufacturing a micro-electro-mechanical system (MEMS) resonator device using the same device layer, dielectric layer, and conductive layer that is used to create other electrical devices in a complementary metal oxide semiconductor (CMOS) process.

Abstract: The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanicalsystems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die.

Abstract: The present invention provides a method for manufacturing a micro-electro-mechanical system (MEMS) resonator device using the same device layer, dielectric layer, and conductive layer that is used to create other electrical devices in a complementary metal oxide semiconductor (CMOS) process.

Abstract: The present invention includes a fabrication method to construct a combined MEMS device and IC on a silicon-on-insulator (SOI) wafer (MEMS-IC) using standard foundry IC processing techniques. The invention also includes the resulting MEMS-IC. Deposition layers are added to the SOI wafer and etched away to form interconnects for electronic components for the IC. In one embodiment of the present invention, standard foundry IC processing etching techniques may be used to etch away parts of the insulating layer and device layer of the SOI wafer to create fine gaps and other detailed mechanical features of the MEMS device. Finely detailed etching patterns may be added by using imprint lithography instead of using contact or optical lithography.

Abstract: The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, or the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The reverse breakdown voltage capability of the LHVD may be increased by using an intrinsic material between the anode and the cathode. Similarly, in a lateral high-voltage thyristor, such as a lateral high-voltage Silicon-controlled rectifier (LHV-SCR), the withstand voltage capability of the LHV-SCR may be increased by using an intrinsic material between the anode and the cathode.

Abstract: The present invention includes a silicon-on-insulator (SOI) wafer that enhances certain performance parameters by increasing silicon device layer and insulator layer thicknesses and increasing silicon handle wafer resistivity. By increasing the silicon device layer thickness, effects of the floating body problem may be significantly reduced. By increasing the insulator layer thickness and the silicon handle wafer resistivity, influences from the silicon handle wafer on devices formed using the silicon device layer may be significantly reduced. As a result, standard tools, methods, and processes may be used.

Abstract: The present invention provides a MEMS switch that is formed on, not merely placed on, a semiconductor substrate of a semiconductor device. The basic semiconductor substrate includes a handle wafer, an insulator layer over the handle wafer, and a device layer over the insulator layer. The device layer is one in which active semiconductor devices, such as transistors and diodes, may be formed. The MEMS switch is formed over the device layer during fabrication of the semiconductor device. Additional layers, such as connecting layers, passivation layers, and dielectric layers, may be inserted among or between any of these various layers without departing from the essence of the invention. As such, the present invention avoids the need to fabricate MEMS switches apart from the devices that contain circuitry to be associated with the MEMS switches, and to subsequently mount the MEMS switches to modules that circuitry.

Abstract: Integrating high-voltage devices with other circuitry, which may be fabricated on a semiconductor wafer using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, and the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The high-voltage devices may be used to create useful high-voltage circuits, such as level-shifting circuits, input protection circuits, charge pump circuits, switching circuits, latch circuits, latching switch circuits, interface circuits, any combination thereof, or the like. The high-voltage circuits may be controlled by the other circuitry.