Abstract: The coating material for photolithography contains a surfactant having no perfluoroalkyl structure. The coating material for photolithography contains 0.0001 to 3 wt % of a surfactant made from a resin having an aromatic group substituted with a fluorine atom, a trifluoromethoxy group, a difluoromethoxy group, a trifluoromethylthio group, or a difluoromethylthio group.

Abstract: A resist composition comprising a base polymer possessing a sulfonium or iodonium salt structure having an iodized arylsulfonic acid anion attached to its backbone is provided. It exhibits a high sensitivity and forms a pattern with reduced LWR or improved CDU independent of whether it is of positive or negative type.

Abstract: A positive resist composition is provided comprising a base polymer comprising repeat units (a) having a substituted or unsubstituted carboxy group and a substituted or unsubstituted phenolic hydroxy group, repeat units (b) having an acid labile group, and repeat units (c) consisting of a sulfonic acid anion bonded to the polymer backbone and a sulfonium or iodonium cation. It exhibits a high sensitivity and resolution and forms a pattern of satisfactory profile with reduced edge roughness or dimensional variation.

Abstract: A resist composition comprising an acid generator containing a sulfonium or iodonium salt of an arylsulfonic acid substituted with at least two iodine atoms is provided. It exhibits a high sensitivity and forms a pattern with reduced LWR or improved CDU independent of whether it is of positive or negative type.

Abstract: The onium salt type monomer for a chemically amplified resist composition has excellent solvent solubility and a high sensitivity and contrast, and is excellent in lithographic performance such as exposure tolerance (EL), LWR, CDU and depth of focus (DOF), and excellent in resistance to pattern collapse and etch resistance even in fine pattern formation. The onium salt type monomer has the following formula (a).

Abstract: A positive resist composition comprises a base polymer comprising repeat units (a) derived from a triple bond-containing maleimide compound and repeat units (b) adapted to increase solubility in an alkaline developer under the action of acid. A pattern of good profile with a high resolution, reduced edge roughness, and reduced size variations is formed therefrom.

Abstract: A resist composition comprising a bisonium salt containing a divalent anion having a sulfonate anion structure having a fluorine atom or a trifluoromethyl group at ?- or ?-position and linked to an aromatic group having an iodine atom or a bromine atom and a sulfonimide anion structure or a sulfonamide anion structure bonded to the aromatic group having an iodine atom or a bromine atom, via a linking group having 1 or more carbon atoms, and an onium cation.

Abstract: A resist composition comprising a bisonium salt containing a divalent anion having a sulfonate anion structure having a fluorine atom or a trifluoromethyl group at ?- or ?-position and linked to an aromatic group having an iodine atom or a bromine atom and a carboxylate anion structure bonded to the aromatic group having an iodine atom or a bromine atom, via a linking group having 1 or more carbon atoms, and an onium cation.

Abstract: A resist composition comprising a bisonium salt containing a divalent anion having an arylsulfonate anion structure linked to an aromatic group having an iodine atom or a bromine atom and a sulfonimide anion structure or a sulfonamide anion structure bonded to the aromatic group having an iodine atom or a bromine atom, via a linking group having 1 or more carbon atoms, and an onium cation.

Abstract: A resist composition comprising a bisonium salt containing a divalent anion having a sulfonate anion structure having a fluorine atom or a trifluoromethyl group at the position a or ? and linked to an aromatic group having an iodine atom or a bromine atom and a carboxylate anion structure bonded to the aromatic group having an iodine atom or a bromine atom, via a linking group having 1 or more carbon atoms, and an onium cation.

Abstract: A negative resist composition comprising a base polymer comprising repeat units derived from a triple bond-containing maleimide compound is provided. A pattern with a high resolution and reduced edge roughness is formed therefrom.

Abstract: A bio-electrode composition contains particles having surfaces with an N-carbonyl sulfonamide salt shown by the following general formula (1). R1 represents a linear, branched, or cyclic alkylene group having 1 to 20 carbon atoms and optionally having an aromatic group, ether group, or ester group, or an arylene group having 6 to 10 carbon atoms. Rf represents a linear, branched, or cyclic alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 10 carbon atoms, and optionally has a fluorine atom. M+ represents an ion selected from the group consisting of lithium, sodium, potassium, and silver ions. This invention provides a bio-electrode composition capable of forming a living body contact layer for a bio-electrode which is excellent in electric conductivity and biocompatibility, light-weight, and manufacturable at low cost, and prevents significant reduction in electric conductivity even when wetted with water or dried.

Abstract: The resist composition comprises an onium salt of sulfonic acid which has a linkage of two iodized or brominated aromatic groups as the acid generator. The resist composition offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone. A pattern can be formed by using the resist composition.

Abstract: A resist composition comprises an onium salt of aromatic sulfonic acid having a linkage of two iodized or brominated aromatic groups as the acid generator is provided. The resist composition offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone. A pattern can be formed by using the resist composition.

Abstract: A positive resist composition comprising a base polymer comprising repeat units consisting of a fluorinated carboxylate, fluorinated phenoxide, fluorinated sulfonamide, fluorinated alkoxide, fluorinated 1,3-diketone, fluorinated ?-keto ester or fluorinated imide anion and a nitrogen-containing cation having a tertiary ester structure exhibits a high sensitivity, high resolution, low edge roughness and small size variation, and forms a pattern of good profile after exposure and development.

Abstract: The resist composition exhibits a high sensitivity, reduced LWR, and improved CDU. The resist composition can form a pattern by using the resist composition. The resist composition comprises a base polymer of sulfonium salt structure having a trifluoromethoxybenzenesulfonamide, difluoromethoxybenzenesulfonamide, trifluoromethoxybenzenesulfonimide or difluoromethoxybenzenesulfonimide anion bonded to its backbone offers a high sensitivity, reduced LWR and improved CDU.

Abstract: The resist composition includes a base polymer and a salt. The salt consisting of an anion derived from an iodized or brominated phenol and a cation derived from a 2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane, biguanide or phosphazene compound. The resist composition exerts a high sensitizing effect and an acid diffusion suppressing effect, causes no film thickness loss after development, and is improved in resolution, LWR and CDU when a pattern is formed therefrom by lithography.

Abstract: An onium salt having the following formula (1) is provided. In formula (1), one of R13 and R14 is a group having a partial structure of the following formula (1a). Q1 to Q3 are each independently a hydrogen atom, a fluorine atom, or a C1-C6 fluorinated saturated hydrocarbyl group, provided that, when both of Q1 and Q2 are a hydrogen atom, Q3 is a fluorine atom or a C1-C6 fluorinated saturated hydrocarbyl group, and the total number of fluorine atoms in Q1 to Q3 is 2 or more.

Abstract: A positive resist composition comprising a base polymer comprising repeat units having the structure of a sulfonium salt of a fluorinated phenol exhibits a high sensitivity, high resolution, low edge roughness and small size variation, and forms a pattern of good profile after exposure and development.

Abstract: The resist composition exhibits a high sensitivity, reduced LWR, and improved CDU independent of whether it is of positive or negative tone. The resist composition comprises a sulfonium salt of N-carbonyltrifluoromethoxybenzenesulfonamide, N-carbonyldifluoromethoxybenzenesulfonamide, trifluoromethoxybenzenesulfonimide, and difluoromethoxybenzenesulfonimide as the quencher is provided. The resist composition offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone.