Abstract: Disclosed is a method of processing a substrate, the method including: a coating operation of supplying a coating liquid containing a volatile component to a top surface of the substrate to form a cleaning film; and a cleaning film processing operation of processing the cleaning film, in which the cleaning film processing operation includes: a crack formation operation of generating a crack in the cleaning film formed on the substrate to form film flakes; and a delamination operation of delaminating the film flakes from the top surface of the substrate by volatilizing the volatile component contained in the film flake.

Abstract: The present invention relates to a composition for diagnosing limb-girdle muscular dystrophy type 2H, a method of providing information for diagnosis, and a method of screening a drug for the treatment of limb-girdle muscular dystrophy type 2H.

Abstract: The present invention relates to a pharmaceutical composition for preventing or treating a skeletal muscle disease, a method of screening a drug for the treatment of a skeletal muscle disease, a composition for diagnosing a skeletal muscle disease, and a method of providing information for the diagnosis of a skeletal muscle disease.

Abstract: A flexible electric device includes a first electrode on a flexible member, at least one semiconductor element on the first electrode, at least one filling region adjacent to the semiconductor element and a second electrode on the semiconductor element.

Abstract: A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor device including the semiconductor compound structure. The semiconductor compound structure includes a substrate; a buffer layer disposed on the substrate, and formed of a material including carbons having hexagonal crystal structures; and a semiconductor compound layer grown and formed on the buffer layer.

Abstract: A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at least one vertical semiconductor element that is at least partly embedded in a flexible material layer. The flexible semiconductor device may further include a first electrode formed on a first surface of the flexible material layer and a second electrode formed on a second surface of the flexible material layer. A method of manufacturing a flexible semiconductor device may include separating a flexible material layer, in which the at least one vertical semiconductor element is embedded, from a substrate by weakening or degrading an adhesive force between an underlayer and a buffer layer by using a difference in coefficients of thermal expansion of the underlayer and the buffer layer.

Abstract: A tunneling device may include a tunnel barrier layer, a first material layer including a first conductivity type two-dimensional material on a first surface of the tunnel barrier layer and a second material layer including a second conductivity type two-dimensional material on a second surface of the tunnel barrier layer. The tunneling device may use a tunneling current through the tunnel barrier layer between the first material layer and the second material layer.

Abstract: A method of forming polysilicon, a thin film transistor (TFT) using the polysilicon, and a method of fabricating the TFT are disclosed. The method of forming the polysilicon comprises: forming an insulating layer on a substrate; forming a first electrode and a second electrode on the insulating layer; forming at least one heater layer on the insulating layer so as to connect the first electrode and the second electrode; forming an amorphous material layer containing silicon on the heater layer(s); forming a through-hole under the heater layer(s) by etching the insulating layer; and crystallizing the amorphous material layer into a polysilicon layer by applying a voltage between the first electrode and the second electrode so as to heat the heater layer(s).

Abstract: An active optical device and a display apparatus including the same are provided. The active optical device includes: first to third electrodes that are sequentially disposed spaced apart from one another; a first refractive index change layer disposed between the first electrode and the second electrode and in which a refractive index is changed by an electric field; and a second refractive index change layer disposed between the second electrode and the third electrode and in which a refractive index is changed by an electric field.

Abstract: The present disclosure relates to a method of transferring semiconductor elements from a non-flexible substrate to a flexible substrate. The present disclosure also relates to a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. The semiconductor elements grown or formed on a non-flexible substrate may be effectively transferred to a resin layer while maintaining an arrangement of the semiconductor elements. The resin layer may function as a flexible substrate for supporting the vertical semiconductor elements.

Abstract: A flexible electric device includes a first electrode on a flexible member, at least one semiconductor element on the first electrode, at least one filling region adjacent to the semiconductor element and a second electrode on the semiconductor element.

Abstract: A stacked structure may include semiconductors or semiconductor layers grown on an amorphous substrate. A light-emitting device and a solar cell may include the stacked structure including the semiconductors grown on the amorphous substrate. A method of manufacturing the stacked structure, and the light-emitting device and the solar cell including the stacked structure may involve growing a crystalline semiconductor layer on an amorphous substrate.

Abstract: A tunneling device may include a tunnel barrier layer, a first material layer including a first conductivity type two-dimensional material on a first surface of the tunnel barrier layer and a second material layer including a second conductivity type two-dimensional material on a second surface of the tunnel barrier layer. The tunneling device may use a tunneling current through the tunnel barrier layer between the first material layer and the second material layer.

Abstract: An active optical device is provided. The active optical device includes an optically variable layer having a refractive index which changes according to temperature; and a temperature control unit that controls a temperature of one or more regions of the optically variable layer.

Abstract: Provided is a method of transferring semiconductor elements formed on a non-flexible substrate to a flexible substrate. Also, provided is a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. A semiconductor element grown or formed on the substrate may be efficiently transferred to the resin layer while maintaining an arrangement of the semiconductor elements. Furthermore, the resin layer acts as a flexible substrate supporting the vertical semiconductor elements.

Abstract: An active optical device includes a substrate; a plurality of refractive index variable regions formed on the substrate; and a voltage applier which applies an electric field to the plurality of refractive index variable regions.

Abstract: The present disclosure relates to a method of transferring semiconductor elements from a non-flexible substrate to a flexible substrate. The present disclosure also relates to a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. The semiconductor elements grown or formed on a non-flexible substrate may be effectively transferred to a resin layer while maintaining an arrangement of the semiconductor elements. The resin layer may function as a flexible substrate for supporting the vertical semiconductor elements.

Abstract: A method of fabricating a gallium nitride (GaN) thin layer, by which a high-quality GaN layer may be grown on a large-area substrate using an electrode layer suspended above a substrate, a GaN film structure fabricated using the method, and a semiconductor device including the GaN film structure. The method includes forming a sacrificial layer on a substrate, forming a first buffer layer on the sacrificial layer, forming an electrode layer on the first buffer layer, forming a second buffer layer on the electrode layer, partially etching the sacrificial layer to form at least two support members configured to support the first buffer layer and form at least one air cavity between the substrate and the first buffer layer, and forming a GaN thin layer on the second buffer layer.

Abstract: Provided is a method of transferring semiconductor elements formed on a non-flexible substrate to a flexible substrate. Also, provided is a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. A semiconductor element grown or formed on the substrate may be efficiently transferred to the resin layer while maintaining an arrangement of the semiconductor elements. Furthermore, the resin layer acts as a flexible substrate supporting the vertical semiconductor elements.

Abstract: A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at least one vertical semiconductor element that is at least partly embedded in a flexible material layer. The flexible semiconductor device may further include a first electrode formed on a first surface of the flexible material layer and a second electrode formed on a second surface of the flexible material layer. A method of manufacturing a flexible semiconductor device may include separating a flexible material layer, in which the at least one vertical semiconductor element is embedded, from a substrate by weakening or degrading an adhesive force between an underlayer and a buffer layer by using a difference in coefficients of thermal expansion of the underlayer and the buffer layer.