Abstract: Provided is a field emission display (FED) with a carbon nanotube emitter and a method of manufacturing the same. A gate stack that surrounds the CNT emitter has a mask layer that covers an emitter electrode adjacent to the CNT emitter, and a gate insulating film, a gate electrode, a focus gate insulating film (SiOx, X<2), and a focus gate electrode formed on the mask layer. The focus gate insulating film has a thickness 2 ?m or more, and preferably 3˜15 ?m and is preferably made using PECVD. A flow rate of silane and nitric acid for forming the focus gate insulating film and/or the gate insulating film are maintained at 50˜700 sccm and 700˜4,500 sccm, respectively. By doing so and by making the oxide thick, the oxide is less apt to crack and thus less apt to generate a leakage current.

Abstract: A field emission display (FED) using carbon nanotube emitters and a method of manufacturing the same. A gate stack that surrounds the CNT emitter includes a mask layer that covers an emitter electrode adjacent to the CNT emitter, and a gate insulating film, a gate electrode, a focus gate insulating film (SiOX, X<2), and a focus gate electrode formed on the mask layer. The height of the mask layer is greater than that of the CNT emitter. The focus gate insulating film has a thickness 2 ?m or more, and preferably 3˜15 ?m. In a process of forming the focus gate insulating film and/or the gate insulating film, a flow rate of silane is maintained at 50˜700 sccm and a flow rate of nitric acid (N2O) is maintained at 700˜4,500 sccm.

Abstract: A field emission display is provided. The field emission display includes a rear substrate, a cathode, a first dielectric layer, a gate electrode, a second dielectric layer, a deflection electrode, a third dielectric layer, and a protective electrode. The cathode is formed on the rear substrate, and an emitter is formed on the cathode. The first dielectric layer is formed on the cathode, and a first through hole corresponding to the emitter is formed in the first dielectric layer. The gate electrode is formed on the first dielectric layer, and a gate hole corresponding to the emitter is formed in the gate electrode. The second dielectric layer is formed on the gate electrode, and a second through hole corresponding to the emitter is formed in the second dielectric layer.

Abstract: A ferroelectric cold cathode and a ferroelectric field emission device including the ferroelectric cold cathode includes: a substrate; a lower electrode layer arranged on a upper surface of the substrate, the lower electrode layer including a conductive material; a ferroelectric layer arranged on a upper surface of the lower electrode, the ferroelectric layer including a ferroelectric material; and an upper electrode including an ultrafine linear material net arranged on the ferroelectric layer and exposing a portion of the upper surface of the ferroelectric layer through a plurality of net holes of conductive ultrafine linear material particles distributed in a net structure.

Abstract: A thermal electron emission backlight device comprises: a first substrate and a second substrate disposed in parallel and separated by a predetermined distance from each other; a first anode electrode and a second anode electrode facing the first anode electrode, the first and second anode electrodes being formed on inner surfaces of the first substrate and the second substrate, respectively; cathode electrodes disposed at predetermined intervals and in parallel with each other between the first substrate and the second substrate; a phosphor layer formed on the second anode electrode; and a plurality of spacers disposed between the first substrate and the second substrate so as to maintain the predetermined distance therebetween. When a predetermined voltage is applied to the cathode electrodes, thermal electrons are emitted from the cathode electrodes.

Abstract: A field emission device comprises a glass substrate, an emitter electrode formed on the glass substrate, a carbon nanotube (CNT) emitter formed on the emitter electrode, and a gate stack formed around the CNT emitter for extracting electron beams from the CNT emitter and focusing the extracted electron beams onto a given position. The gate stack includes a mask layer covering the emitter electrode and provided around the CNT emitter, a gate insulating layer formed on the mask layer to a predetermined height, a mirror electrode formed on an inclined plane of the gate insulating layer, a gate electrode formed on the gate insulating layer and spaced apart from the mirror electrode, and a focus gate insulating layer and a focus gate electrode sequentially formed on the gate electrode. The field emission device is manufactured and employed in a display device in accordance with the present invention.

Abstract: A field emission device comprises a glass substrate, an emitter electrode formed on the glass substrate, a carbon nanotube (CNT) emitter formed on the emitter electrode, and a gate stack formed around the CNT emitter for extracting electron beams from the CNT emitter and focusing the extracted electron beams onto a given position. The gate stack includes a mask layer covering the emitter electrode and provided around the CNT emitter, a gate insulating layer formed on the mask layer to a predetermined height, a mirror electrode formed on an inclined plane of the gate insulating layer, a gate electrode formed on the gate insulating layer and spaced apart from the mirror electrode, and a focus gate insulating layer and a focus gate electrode sequentially formed on the gate electrode. The field emission device is manufactured and employed in a display device in accordance with the present invention.

Abstract: In a field emission backlight unit, a method of driving the same, and a method of manufacturing a lower substrate, the field emission backlight unit includes: a lower substrate; first and second electrodes alternately formed in parallel lines on the lower substrate; emitters interposed between the lower substrate and the first electrodes; an upper substrate spaced a predetermined distance from the lower substrate and facing the lower substrate; a third electrode formed on a bottom surface of the upper substrate; and a phosphor layer formed on the third electrode. The driving method comprises applying a cathode voltage to the first electrodes and a gate voltage to the second electrodes, followed by reversing the application of the voltages to the first and second electrodes. The manufacturing method comprises forming and drying or firing a patterned carbon nanotube (CNT) layer, and then pattering, drying and firing a conductive thick film.

Abstract: A field emission RF amplifier. The field emission RF amplifier includes one or more RF amplification units on a substrate and held in a vacuum state and facing a reflection electrode. The RF amplification unit includes a cathode electrode, gate electrode, and an anode electrode all formed on the same substrate. The cathode electrode has a CNT emitter. A DC voltages are applied to the cathode and anode electrodes. An RF signal is input at the cathode electrode and is amplified and output at the anode electrode. Capacitors and inductors are arranged to filter out AC and DC components where needed. An improved amplification of RF signals with high electron mobility and good impedance matching abilities result.

Abstract: A field emission device, a field emission display for displaying images with good quality adopting the same, and a manufacturing method thereof are provided. The field emission device allows a mesh grid to closely contact the surface of a field emission array on a substrate and for this purpose, applies a tensile force to the mesh grid using a predetermined tension member.

Abstract: A Field Emission Device (FED) and its method of manufacture includes: forming a substrate; forming a cathode having a cathode aperture on an upper surface of the substrate; forming a material layer having a first through hole with a smaller diameter than that of the cathode aperture on an upper surface of the cathode; forming a first insulator having a first cavity on an upper surface of the material layer; forming a gate electrode having a second through hole on an upper surface of the first insulator; and forming an emitter in a central portion of the cathode aperture.

Abstract: A method of forming a carbon nanotube whereby the carbon nanotube has a fine diameter. To form the carbon nanotube, a polyimide layer is formed on an electrode deposited on a substrate. A plurality of protrusions are formed on the electrode by etching the polyimide layer and the surface of the electrode. A catalyst layer is formed on the surface of the electrode between the protrusions. The carbon nanotube on the catalyst layer is grown. The carbon nanotubes have fine diameters so that the use of the carbon nanotube in a device may reduce the operating voltage and can improve a field emission characteristic of the device.

Abstract: A field emission RF amplifier. The field emission RF amplifier includes one or more RF amplification units on a substrate and held in a vacuum state and facing a reflection electrode. The RF amplification unit includes a cathode electrode, gate electrode, and an anode electrode all formed on the same substrate. The cathode electrode has a CNT emitter. A DC voltages are applied to the cathode and anode electrodes. An RF signal is input at the cathode electrode and is amplified and output at the anode electrode. Capacitors and inductors are arranged to filter out AC and DC components where needed. An improved amplification of RF signals with high electron mobility and good impedance matching abilities result.

Abstract: A field emission backlight device may include a first substrate and a second substrate separate from and roughly parallel to each other, a first anode electrode and a second anode electrode that face each other on inner surfaces of the first substrate and the second substrate, and cathode electrodes separate from and roughly parallel to one another between the first substrate and the second substrate. It may also include electron emission sources disposed on the cathode electrodes to emit electrons by an electric field and a phosphorous layer disposed on the first anode electrode or the second anode electrode.

Abstract: A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features, and a focus gate electrode over a gate electrode, wherein one or more gates of the gate electrode is exposed through a single opening of the focus gate electrode. In the FED, occurrence of arcing is suppressed. Although an arcing occurs in the FED, damage of a cathode and a resistor layer is prevented, so that a higher working voltage can be applied to the anode. Also, due to the micro-tips with nano-sized surface features, the emission current density of the FED increases, so that a high-brightness display can be achieved with the FED. The gate turn-on voltage can be lowered due to the micro-tip as a collection of nano-sized tips, thereby reducing power consumption.

Abstract: A field emission type backlight device with high light efficiency may include a front substrate, a reflective substrate on the front substrate, a rear substrate separated from the front substrate by a predetermined gap, anode electrodes provided with a predetermined gap between them on the rear substrate, a light-emitting layer on the anode electrode, a cathode electrode and a gate electrode spaced apart on the rear substrate between the anode electrodes, and an electron emission source emitting electrons by electric field on the cathode electrode.

Abstract: A field emission device manufactured by the disclosed method and employed in a display unit includes a glass substrate, an emitter electrode formed on the glass substrate, a carbon nanotube (CNT) emitter formed on the emitter electrode, and a gate stack formed around the CNT emitter. Electron beams are extracted from the CNT emitter and the extracted electron beams are focused onto a given position. The gate stack includes a mask layer that covers the emitter electrode provided around the CNT emitter, a gate insulating layer and a gate electrode sequentially formed on the mask layer, a focus gate insulating layer having double inclined planes facing the CNT emitter on the gate electrode, and focus gate electrode coated on the focus gate insulating layer.

Abstract: A field emission device comprises a glass substrate, an emitter electrode formed on the glass substrate, a carbon nanotube (CNT) emitter formed on the emitter electrode, and a gate stack formed around the CNT emitter for extracting electron beams from the CNT emitter and focusing the extracted electron beams onto a given position. The gate stack includes a mask layer covering the emitter electrode and provided around the CNT emitter, a gate insulating layer formed on the mask layer to a predetermined height, a mirror electrode formed on an inclined plane of the gate insulating layer, a gate electrode formed on the gate insulating layer and spaced apart from the mirror electrode, and a focus gate insulating layer and a focus gate electrode sequentially formed on the gate electrode. The field emission device is manufactured and employed in a display device in accordance with the present invention.

Abstract: A method of forming a carbon nanotube emitter includes: forming a carbon nanotube composite on a substrate with a predetermined shape, coating surface treating material in a liquid phase on the carbon nanotube composite and drying the surface treating material, and peeling the dried surface treating material off of the carbon nanotube composite.

Abstract: Provided is a field emission display (FED) with a carbon nanotube emitter and a method of manufacturing the same. A gate stack that surrounds the CNT emitter has a mask layer that covers an emitter electrode adjacent to the CNT emitter, and a gate insulating film, a gate electrode, a focus gate insulating film (SiOx, X<2), and a focus gate electrode formed on the mask layer. The focus gate insulating film has a thickness 2 ?m or more, and preferably 3˜15 ?m and is preferably made using PECVD. A flow rate of silane and nitric acid for forming the focus gate insulating film and/or the gate insulating film are maintained at 50˜700 sccm and 700˜4,500 sccm, respectively. By doing so and by making the oxide thick, the oxide is less apt to crack and thus less apt to generate a leakage current.