Patents by Inventor Jun-hee Choi

Jun-hee Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6420726
    Abstract: A triode field emission device using a field emission material and a driving method thereof are provided. In this device, gate electrodes serving to take electrons out of a field emission material on cathodes are installed on a substrate below the cathodes, so that the manufacture of the device is easy. Also, electrons emitted from the field emission material are controlled by controlling gate voltage.
    Type: Grant
    Filed: December 28, 2000
    Date of Patent: July 16, 2002
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Yong-soo Choi, Jun-hee Choi, Nae-sung Lee, Jong-min Kim
  • Publication number: 20010006321
    Abstract: A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features. Due to the micro-tips as a collection of a large number of nano-tips, the FED is operable at low gate turn-on voltages with high emission current densities, thereby lowering power consumption.
    Type: Application
    Filed: January 5, 2001
    Publication date: July 5, 2001
    Inventors: Jun-hee Choi, Seung-nam Cha, Hang-woo Lee
  • Publication number: 20010006851
    Abstract: A method of forming a micro structure having nano-sized surface features is provided. The method includes the steps of forming a micro structure having predetermined size and shape on a substrate, coating a carbon polymer layer on the substrate including the micro structure to a predetermined thickness, performing a first etch on the carbon polymer layer by means of plasma etching using a reactive gas in which O2 gas for etching the carbon polymer layer and a gas for etching the micro structure are mixed and forming a mask layer by the residual carbon polymer layer on the surface of the micro structure, and performing a second etch by means of plasma etching using the mixed reactive gas to remove the mask layer and etch the surface of the micro structure not covered by the mask layer so that the micro structure has nano-sized surface features.
    Type: Application
    Filed: January 5, 2001
    Publication date: July 5, 2001
    Inventors: Jun-hee Choi, Seung-nam Cha, Hang-woo Lee
  • Publication number: 20010006325
    Abstract: A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features, and a focus gate electrode over a gate electrode, wherein one or more gates of the gate electrode is exposed through a single opening of the focus gate electrode. In the FED, occurrence of arcing is suppressed. Although an arcing occurs in the FED, damage of a cathode and a resistor layer is prevented, so that a higher working voltage can be applied to the anode. Also, due to the micro-tips with nano-sized surface features, the emission current density of the FED increases, so that a high-brightness display can be achieved with the FED. The gate turn-on voltage can be lowered due to the micro-tip as a collection of nano-sized tips, thereby reducing power consumption.
    Type: Application
    Filed: January 5, 2001
    Publication date: July 5, 2001
    Inventors: Jun-hee Choi, Seung-nam Cha, Hang-woo Lee
  • Publication number: 20010006232
    Abstract: A triode field emission device using a field emission material and a driving method thereof are provided. In this device, gate electrodes serving to take electrons out of a field emission material on cathodes are installed on a substrate below the cathodes, so that the manufacture of the device is easy. Also, electrons emitted from the field emission material are controlled by controlling gate voltage.
    Type: Application
    Filed: December 28, 2000
    Publication date: July 5, 2001
    Inventors: Yong-soo Choi, Jun-hee Choi, Nae-sung Lee, Jong-min Kim
  • Patent number: 5735721
    Abstract: A method for fabricating a field emission display device, in which a photoresist is formed on a gate electrode layer to form a release layer, a metal mask is formed thereon, and holes are etched to form micro-tips, thus simplifying the fabrication process thereof. Also, the size and shape of the micro-tips are easily adjustable. Further, since the photoresist can be easily soluble in a solvent, the problem of contamination during the etching process is resolved, thereby improving the reliability of a manufactured field emission display device.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: April 7, 1998
    Assignee: Samsung Display Devices Co., Ltd.
    Inventor: Jun-hee Choi